Multi-energy ion implantation was investigated as a physical route for tailoring the electrochemical response of polymer interfaces. Polyimide (PI), poly(methyl methacrylate) (PMMA), and cyclic olefin copolymer (COC) were implanted with Cu+ and Ag+ ions at 1×1012–1×1014 cm−2 using sequential energies of 2.8, 2.0, and 1.2 MeV. SRIM, DFT, RBS/ERDA, FTIR, XPS, I–V, and EIS analyses showed that implantation induces polymer-specific dehydrogenation, bond rearrangement, formation of oxidized carbon environments, and defect sites capable of stabilizing Cu and Ag atoms. The strongest electrochemical changes were observed mainly at the intermediate ion fluence of 1 × 1013 cm−2, where reduced effective resistance and enhanced capacitance indicated increased interfacial polarization rather than simple electronic conduction. These results demonstrate that multi-energy ion implantation can create locally activated subsurface polymer regions, offering a physical strategy for designing functional polymer interfaces for electrochemical applications.

The surface properties and electrical behavior of carbon-based materials can be effectively tailored by energetic ion irradiation. In this study, graphene oxide (GO), cyclic olefin copolymer foils (COC, Topas 112 and 011, respectively) were irradiated with 1 MeV Au ions using a 3 MV Tandetron accelerator at fluences of 1 × 1014, 1 × 1015, and 2.5 × 1015 ions/cm2. The irradiation induced systematic modifications in surface chemistry, morphology, wettability, and electrical properties. Compositional changes before and after irradiation were investigated using Rutherford backscattering spectrometry (RBS) and elastic recoil detection analysis (ERDA), while surface morphology and roughness were characterized by atomic force microscopy (AFM), revealing a clear fluence-dependent evolution of nanoscale topography. The vibrational characteristics will be assessed through Raman spectroscopy. Surface wettability was evaluated by static contact angle measurements, and surface free energy was determined using the Owens–Wendt–Rabel–Kaelble (OWRK) method, showing a consistent decrease in water contact angle and an increase in surface free energy with increasing ion fluence in Topas 112/011 but not in GO. Electrical characterization demonstrated a pronounced fluence-dependent decrease in sheet resistivity across all investigated substrates. The results show that 1 MeV Au-ion irradiation enables controlled modification of both surface and electrical properties of carbon-based foils.

The surface properties and electrical behavior of carbon-based materials can be effectively modified by energetic ion irradiation. In the present study, graphene oxide (GO) and cyclic olefin copolymer foils (COC, Topas 112 and 011, respectively) were irradiated with 1 MeV Au ions using a 3 MV Tandetron accelerator at fluences of 1 × 1014, 1 × 1015, and 2.5 × 1015 cm-2. The irradiation induced systematic modifications in surface chemistry, morphology, wettability, and electrical properties. Composition changes were investigated using Rutherford backscattering spectrometry (RBS) and elastic recoil detection analysis (ERDA), while surface morphology and roughness were characterized by atomic force microscopy (AFM). This revealed a clear fluence-dependent evolution of nanoscale topography. The vibrational characteristics were assessed through Raman spectroscopy, and the chemical composition of the surface layers was analyzed by X-ray photoelectron spectroscopy (XPS). The surface wettability was evaluated by static contact angle measurements, and surface free energy was determined using the Owens-Wendt-Rabel-Kaelble (OWRK) method. These measurements showed a consistent decrease in water contact angle and an increase in surface free energy with increasing ion fluence in the COC substrates, whereas GO exhibited a distinct response. Electrical characterization demonstrated a pronounced fluence-dependent decrease in sheet resistivity in polymers. The results show that 1 MeV Au ion irradiation enables systematic and fluence-dependent modification of both surface and electrical properties.

This paper presents a study on the measurement of particle fluxes (Al, Al+, Cr, Cr+, Ar+) at the substrate position during magnetron sputtering deposition. The fluxes were investigated for pure aluminium and chromium targets, as well as their alloy. The industrial magnetron deposition system employs a novel focused magnetron sputtering technique, where only a small portion of the cylindrical target is sputtered at a given time because the plasma is confined to a narrow ring enclosing the target and, thanks to movable magnets, periodically moves over the entire length of the cylinder. This arrangement enables very high power densities (similar to 625 W.cm-2) to be achieved using a continuous direct current power supply. Using a biasable quartz crystal microbalance system, both atomic and ionic fluxes of the metal particles were quantified. The same system, configured as a flat Langmuir probe in a saturated ion flux region, was also used to measure the total ion flux. To differentiate between the aluminium and chromium fluxes sputtered from the alloy target, Rutherford backscattering spectrometry of the deposited samples was used. This pioneering approach enables the quantification and differentiation of atomic and ionic species of film-forming elements, as well as the argon ion flux, which are critical parameters in thin-film deposition. Despite the ionised metal flux fraction of the sputtered species reaching around 15%, the flux of metal ions on the substrate is ten times lower than that of argon ions.

Two-dimensional (2D) transition metal dichalcogenides (TMDs) are of great interest for next-generation electronic and optoelectronic devices due to their unique band structures. Here, we report the synthesis of high-quality few-layer MoS2 films using the sodium chloride (NaCl)-assisted chemical vapor deposition (CVD) method. This approach enables growth at a reduced temperature of 650 degrees C, significantly lower than the conventional 850 degrees C. Structural and morphological characterizations performed using optical microscopy, SEM, TEM, synchrotron-based XRD, Raman spectroscopy, UV-Vis spectroscopy, and Rutherford backscattering spectrometry (RBS) confirm crystalline, uniform, and nearly defect-free films. The Raman A(1g)-E-2g(1) mode separation of approximate to 24.5 cm(-1) and RBS measurements indicate <= 6 layers of MoS2. XRD and SAED analyses further confirm the predominantly single-crystalline nature with an interplanar spacing of 0.27 nm. To examine ion-beam induced structural and electronic properties modification in post-synthesis MoS2, the films were irradiated with 100 MeV Ni ions at fluences between 1 x 10(11) and 1 x 10(13) ions/cm(2). UV-Vis spectra reveal systematic blue shifts in excitonic absorption peaks, corresponding to a similar to 24 meV band gap increase. RBS analysis attributes these changes to sulfur deficiency induced by preferential sputtering, which generate compressive strain. This study demonstrates ion irradiation as an effective route for tailoring the optoelectronic properties of 2D MoS2.

The surface chemistry and electrical response of cyclic olefin copolymer (COC) can be effectively modified by energetic ion irradiation, enabling its use in humidity sensing applications. In this study, COC foils with different norbornene content (Topas 011 and 112) were irradiated with 1 MeV Au ions at fluences of 1 & times; 1014, 1 & times; 1015, and 2.5 & times; 1015 cm-2. Ion-beam-induced modifications in elemental composition were investigated by Rutherford backscattering spectrometry (3.07 MeV He RBS) and elastic recoil detection analysis (ERDA). Changes in surface morphology and microstructure were examined using scanning electron microscopy (SEM) combined with energy dispersive spectroscopy (EDS), while chemical bonding and functional group evolution were analyzed by Fourier-transform infrared spectroscopy (FT-IR). The sensory performance of the irradiated COC foils was evaluated by measuring sheet resistivity as a function of relative humidity.

Two-dimensional graphene-like materials such as molybdenum disulfide (MoS2) possess excellent physicochemical properties for photocatalysis and environmental sensing. This study reports on the fabrication of heterostructures combining MoS2 with ion-track-etched polyethylene terephthalate (PET) supports. The PET membranes were irradiated with 170 MeV Xe+ ions at a fluence of 1 x 106 cm-2 and subsequently etched in 9 M NaOH, yielding pore diameters of 0.38 +/- 0.09 mu m and 0.75 +/- 0.11 mu m. MoS2 films were deposited by pulsed laser deposition and characterized by scanning electron microscopy and Rutherford backscattering spectrometry and elastic recoil detection analysis for microstructure and surface composition. Photocatalytic activity was evaluated by bisphenol A (BPA) degradation under UV-A light. The highest degradation rate constant (0.0083 min-1) and BPA removal efficiency (64.4% after 240 min) were achieved by the etched, uncoated PET membrane, indicating a significant role in surface functionalization. MoS2 layers notably enhanced the adsorption capacity under dark conditions, with the highest pseudo-first-order adsorption rate constant of 0.0528 min-1 (S4 sample). MoS2-coated membranes displayed a similar to 40% higher sensitivity than pristine PET, with a linear resistivity drop across 20%-50% RH.

Facilities equipped with electrostatic accelerators for ion beam analysis often perform high-energy ion beam implantation to dope target materials. A typical task of ion implantation is the uniform placement of ions over a large area using a wide-profile raster-scanned beam. Implantation of ions in a specific pattern (ion beam lithography) is also possible; however, this requires the use of masks, which are typically outsourced for production. Laboratories equipped with a nuclear microprobe can accomplish ion beam lithography without the need for masks, using the direct-write method, although the ion mass and energy may be limited by the magnetic rigidity of the microprobe focusing system. The aim of this work is to demonstrate the possibility of heavy ion lithography without the need for outsourced masks, using a nuclear microprobe as an auxiliary technique. The validity of the proposed method was established by implantation of 2.5 MeV gold ions into glass in a pattern with a minimum feature size of 3 mu m. The potential challenges of this method are described in detail. The most critical issue of this method is material incompatibility.

Carbon dots (CDs) have been obtained by laser ablation of charcoal in a biocompatible liquid and deposited as a thin film on a silicon substrate. A ns-pulsed Nd:YAG laser, operating at 1064 nm of wavelength, irradiates for times up to 3 h the solid carbon target placed into a phosphate-buffered saline (PBS) solution and distilled water, to prepare the CDs dispersion. The prepared thin film on silicon, under a UV lamp at 365 nm in air generates fluorescence in the visible region, with a band around 470 nm, with a blue color. Further investigations concern the thin-film irradiation using 0.8–3.0 MeV protons with 3 nA current in a vacuum, showing also fluorescence in the visible region, from about 400 up to 700 nm, as recorded by a suitable optical spectrometer. The practical applications of CDs are also presented especially in the biomedical field and in the dosimetry ambit, where they can be employed for bioimaging, diagnostics, and therapy.

The unique properties enable molybdenum disulfide (MoS2) exhibit great potential applications in the fields of electronic and optoelectronic devices. MoS2 is a typical two-dimensional (2D) layered material shows low band gap. MoS2 was developed on polyethylene terephthalate (PET) substrate for the construction of flexible devices with Ion beam sputtering (IBS). These MoS2/PET composites were enriched with Ag and Au using ion beam implantation with energy up to 1.8 MeV and ion fluences in the range of 5×1014 to 5×1015 cm-2. The implantation energy was chosen according to the SRIM simulation program to achieve the required depth for both ion species. Thickness of the MoS2 layer as well as Ag and Au depth profiles were examined using Rutherford backscattering method (RBS). Surface morphology before and after ion beam implantation was checked using Scanning electron microscopy (SEM). The electrical properties of prepared structures were characterized by 2-point configuration. Ion implantation has been shown to decrease sheet resistance.

Channel waveguides have been fabricated through ion implantation combined with photolithography in three types of silicate glass of diverse composition. The range of the implanted ions was different. Channel waveguide was formed by single- and multi-energy C+-ion implantation with different ion fluences, resulting in 1 x 1016 cm-2. The multi-energy implantation processes were performed at energies ranging from 0.8 to 1.6 MeV to establish a 1-mu m wide barrier for the optical signal, positioned approximately 2 mu m below the sample surface. For a precise methodology, Rutherford backscattering spectroscopy (RBS) was initially employed to ascertain the composition of the photoresist mask and, in conjunction with X-ray fluorescence (XRF) analysis, to determine the composition of the glass prior to ion implantation. Subsequently, the dimensions of the photoresist mask, glass compositions, and the derived glass-density values were utilised for SRIM simulations of the projected range of the C+ ion. This led to the creation of channel waveguides and, alternatively, the standard planar waveguides. The range depth of the implanted ions (2.6 mu m) and the waveguide-formation depth calculated (3.0 mu m) using mline spectroscopy were in good agreement. In the silicate glass with the highest Si content, the deepest range of carbon ions was SRIM-simulated, and optical modes (TE0 and TE1) were demonstrated at the wavelength of 473 nm. The increase in the refractive index corresponded to the value of 0.0168 for 473 nm. The effect of glass composition on the waveguide's fabrication was discussed. In addition, there was an evident difference between multi- and single-energy implantation processes. When an optical signal with the wavelength of 473 nm was introduced into the sample, only one mode was propagated for the single-energy implantation of C+ ions, whereas two modes were observed for the multi-energy implantation. The possibility of using multi-energy ion implantation for the controlled preparation of optical waveguides in glass has been demonstrated.

Nonthermal plasma-deposited glassy silica is often used as a gas barrier film to protect polymer material in many applications. This study revealed that glassy silica is a slightly porous material (3 vol%) with small pores (2.5 nm) formed during thin film deposition. The infrared spectrum shows that the as-deposited plasma silica contains gaseous carbon dioxide, which is likely encapsulated in the pores. It can be assumed that these CO2 molecules diffuse from the silica layer through the silicon oxide/polymer interface into the protected polymer material. The low crosslinked polymer material is then locally oxidized by CO2, which changes its chemical and physical properties. This means that the silicon oxide/polymer interface gradually moves into the polymer material over time. CO2 diffusion is therefore considered responsible for a shift of the silicon oxide/polymer interface by 30-35 nm after 27 months.

Microfluidic devices play a crucial role in advanced cell biology applications, including cell separations, cultivations, migration and interaction studies, diagnostic devices, and organ‐on‐chips. One of the frequent purposes of such devices is the ability to selectively address the attachment of cells at defined locations on the surface. This study explores the application of middle‐energy carbon, oxygen, and nitrogen ions to locally modify the surface of cyclic olefin copolymer (COC) thermoplastic material, allowing selective cell growth on patterned polymer surfaces. The investigation considers ion element type, ion beam energy, and ion irradiation fluence, analyzing their influence on the modification effect. Characterization of the modified surfaces involves various surface‐analytical methods such as contact angle, energy dispersive spectroscopy (SEM‐EDX), atomic force microscopy (AFM), x‐ray photoelectron spectroscopy (XPS), rutherford backscattering spectrometry (RBS), and elastic recoil detection analysis (ERDA). The study extends to practical aspects, with a representative cancer cell line, MCF‐7, grown on the patterned surface to evaluate the degree of selective attachment. Additionally, the stability of the irradiated patterns is tested under elevated temperatures beyond the glass transition temperature (Tg), demonstrating the compatibility of the approach with hot embossing technology. The findings underscore the potential of ion beam treatment for COC in cell‐biology‐related applications, offering insights into surface modification techniques for enhanced functionality in microfluidic devices.

A SiC Schottky diode and a Si surface barrier detector have been compared during Rutherford backscattering spectrometry (RBS) using 2-3 MeV proton beams. Both detectors are suited to detect high energetic ions with high-energy resolution for spectroscopic analysis. The correlations between the detector parameters and the surface passivating layers, ion energy and current dependence, ion penetration depth, detection efficiency and energy resolution, are outlined. Comparative RBS analysis performed using SiC and Si detectors has been investigated to highlight the advantages and disadvantages of the use of SiC with respect to the traditional Si junction detector. RBS spectrometry has been carried out using projectiles of proton incident on different targets to analyse their composition and thickness by the detection of the backscattered ions revealed by Si and SiC detectors.

Frustrated antiferromagnets offer a captivating platform to study the intricate relationship of magnetic interactions, geometric constraints, and emergent phenomena. By controlling spin orientations, these materials can be tailored for applications in spintronics and quantum information processing. The research focuses on the interplay of magnetic and exchange anisotropy effects in artificial heterostructures based on a canonical frustrated antiferromagnet, UO2. The potential to manipulate the spin directions in this material and switch between distinct antiferromagnetic states is investigated using substrate-induced strain. The phenomenon is probed using exchange bias (EB) effects in stoichiometric UO2/Fe3O4 bilayers. By employing many-body first-principles calculations magnetic configurations in the UO2 layers are identified. Even a minor tetragonal distortion triggers a transition between antiferromagnetic states of different symmetries, driven by a robust alteration of single-ion anisotropy due to the distortion. Consequently, this change influences the arrangement of magnetic moments at the UO2/Fe3O4 interface, affecting the magnitude of exchange bias. The findings showcase how epitaxial strain can effectively manipulate the antiferromagnetic states in frustrated antiferromagnets by controlling single-site anisotropy.

An innovative SiC Schottky junction and a traditional p-n Si surface barrier detector have been compared to detect carbon ions with MeVs kinetic energy. To this, a comparison was performed during Rutherford backscattering spectrometry (RBS) using 2-10 MeV carbon ion beams. The energy resolution and detection efficiency for RBS analysis using the two detectors and their detection electronics are presented. The detector parameters dependencies on the surface passivating layers, ion energy and current dependence, ion penetration depth, detection efficiency, energy resolution, and others are discussed. The comparison of RBS analysis with SiC and Si is investigated highlighting the advantages and disadvantages of using SiC with respect to the traditional Si surface barrier detectors. The two detectors employed for proton, helium and carbon RBS spectrometry of different targets have been also compared on the base of the literature data.

The modification of GaN with Au nanoparticles is a promising way for manipulating optical properties in optoelectronics and enhancing the sensitivity of GaN-based substrates used in Surface Enhanced Raman Spectroscopy. Ion implantation is an attractive method for the preparation of high-purity metal nanoparticles on the surface or within the bulk of solids, although this process in crystals is not yet fully understood. Here we study the specific stages of Au nanoparticle formation in c-plane GaN crystals implanted with 1.85 MeV Au ions to the fluence range of 1.5x10 16 - 7x10 16 cm -2 . The implanted samples were annealed at 800 degrees C in an ammonia atmosphere for 20 minutes to support the nucleation of Au nanoparticles and prevent surface decomposition. The structural and optical properties of the samples were investigated by a combination of Rutherford backscattering spectroscopy in channeling mode (RBS-C), Transmission Electron Microscopy (TEM), Raman spectroscopy, photoluminescence (PL) and diffuse-reflectance spectroscopy (DRS). The two damaged regions, namely at the depth and at the surface, were identified. The depth region exhibits saturation of damage, unlike the surface region reaching an amorphous state for the highest implantation fluence. RBS-C revealed multimodal Au depth profiles for higher ion fluences, which were subsequently redistributed after thermal annealing due to the formation of Au nanoparticles, as confirmed by TEM. Au nanoparticles with fcc structure have been successfully synthesized with the Au-ion implantation fluence of 5x10 16 cm -2 with the sizes mostly of 4 - 20 nm resulting in increased optical scattering and absorption within the spectral range of 500 - 700 nm associated with surface plasmon resonance (SPR) and the emergence of blue (2.8 eV) and red (2 eV) photoluminescence bands linked to the combined effect of SPR and implantation-induced defects.

ZnO nanopillars were implanted with Au-400 keV and Ag-252 keV ions with ion fluences from 1 x 1015 cm-2 to 1 x 1016 cm-2. We compared ZnO nanopillars solely implanted with Au-ions and dually-implanted with Au and Ag-ions. Rutherford Back-Scattering spectrometry (RBS) confirmed Ag and Au embedded in ZnO nanopillar layers in a reasonable agreement with theoretical calculations. A decreasing thickness of the ZnO nanopillar layer was evidenced with the increasing ion implantation fluences. Spectroscopic Ellipsometry (SE) showed a decrease of refractive index in the nanopillar parts with embedded Au, Ag-ions. XRD discovered vertical domain size decreasing with the proceeding radiation damage accumulated in ZnO nanopillars which effect was preferably ascribed to Au-ions. SE and diffuse reflectance spectroscopy (DRS) showed optical activity of the created nanoparticles at wavelength range 500 - 600 nm and 430 - 700 nm for the Au-implanted and Au, Ag-implanted ZnO nanopillars, respectively. Photoluminescence (PL) features linked to ZnO deep level emission appear sub-stantially enhanced due to plasmonic interaction with metal nanoparticles created by Ag, Au-implantation. Photocatalytic activity seems to be more influenced by the nanoparticles presented in the layer rather than the surface morphology. Dual implantation with Ag, Au-ions enhanced optical activity to a larger extent without significant morphology deterioration as compared to the solely Au-ion implanted nanopillars.