Metal-insulator-semiconductor inversion-layer (MIS-IL) silicon solar cells are promising devices for photovoltaic energy conversion due to the ease of junction fabrication, In order to improve the fundamental understanding of these devices, this paper presents a detailed three-dimensional analysis of existing MIS-IL cells by means of two-dimensional (2-D) numerical modeling and circuit simulation, We implement a physical model suggested in the literature for the tunneling current through the MIS tunnel contact into a device simulator and solve the complete set of drift-diffusion equations for electrons and holes within the silicon in two dimensions. Based on experimentally determined device parameters, a good agreement between simulated and experimental current-voltage (I-V) characteristics is obtained, enabling the spatially resolved determination of resistive and recombinative losses. Furthermore, an optimization study is performed to reveal the efficiency limit of MIS-IL silicon solar cells.

The Al/SiOx/p-Si MIS tunnel contact is an essential part of metal-insulator-semiconductor inversion-layer (MIS-IL) silicon solar cells. We experimentally determined the recombination properties (saturation current density J(0) and ideality factor n) of the MIS contact in MIS-IL silicon solar cells fabricated at ISFH. Based on these measurements, it has been possible to resolve the contribution of the MIS contact to the total recombination losses in 1-sun illuminated MIS-IL solar cells by means of 2D numerical modeling. Furthermore, a 2D numerical optimization study is performed where the optimum width of the MIS contact fingers of advanced MIS-IL silicon solar cells is determined.

In this paper, progress in the development of high-efficiency metal-insulator-semiconductor inversion-layer (MIS-IL) silicon solar cells at ISFH is presented. We fabricated MIS-IL solar cells showing independently confirmed energy conversion efficiencies of up to 18.5%. This represents the highest value reported to date for MIS-IL silicon cells. The increase in cell efficiency has been possible by improvements along several lines: (i) reduced perimeter recombination losses, (ii) a reduced contact resistance of the MIS front grid, and (iii) reduced rear surface recombination losses. The cells are characterised in detail and design modifications for further improvements towards 20% efficiency are presented

High-efficiency inversion-layer silicon solar cells are described where the contact to the inversion layer is made via a diffused p-n junction. Silicon nitride (SiN) films are deposited at 250°C or 375°C onto the front surface, resulting in strongly differing surface passivation and inversion-layer properties. A record-high open-circuit voltage for inversion-layer solar cells of 662 mV on 0.5 Ωcm float-zone p-silicon is obtained for the 375°C SiN films. The performance properties of these 16% efficient inversion-layer solar cells are analyzed by means of 2D numerical modeling. An analytical model is developed for the perimeter recombination current via the inversion-layer emitter. Good agreement between measured and simulated dark and 1-sun current-voltage curves is obtained, allowing for the determination of the dominant power and recombination losses in the experimental solar cells