The self-catalyzed growth of InP nanowires on an aerographite substrate is demonstrated in this study by using high growth rate hydride vapor-phase epitaxy technology. Nanowires with aspect ratios higher than 200 and diameters of 0.2–2 μm were analyzed by scanning electron microscopy, transmission electron microscopy, energy-dispersive x-ray analysis, Raman spectroscopy, and photoelectrical characterization. The nanowires were found to be of constant diameter over their length, except for a well-faceted hexagonal tapered end. The novel growth process results in formation of self-catalyzed nanowires compatible with integrated circuit technology. Single-wire InP photodetectors with predominant sensitivity in the infrared spectral range have been prepared and characterized. Semiconductor nanowires gain wider application in light and gas sensors, memory and memristive devices. In this article, we describe a fast and rather simple approach of fabricating catalyst-free InP nanowires with aspect ratio of 200. Important benefits of this method are stoichiometric chemical composition and freestanding arrangement of wires on the aerographite substrate. We demonstrate the development of a robust IR single-nanowire sensor stable at 20–300 K both in the air and vacuum atmosphere, with Iph/Idark ratio in the range 4–1.7.

Here, we report on a new aero-material, called aero-ZnS, representing self-organized architectures made of ZnS hollow micro-tetrapod structures with nanoscale thin walls. The fabrication process is based on the hydride vapor phase epitaxy of CdS on sacrificial micro-tetrapods of ZnO with simultaneous or subsequent transformation of CdS into ZnS and removal of the sacrificial ZnO crystals. The nanostructure of the obtained ZnS hollow micro-tetrapods exhibits the polytypic intergrowth of wurtzite- and sphalerite-type phases perpendicular to their close packed planes. The inner surface of the micro-tetrapod walls preserves oxygen sites, as demonstrated by imaging based on electron energy-loss filtering. The self-organized aero-ZnS architecture proves to be hydrophilic under tension and hydrophobic when compressed against water. Self-propelled liquid marbles assembled using ZnS hollow micro-tetrapod structures are demonstrated.

ZnO thin layers were grown from zinc acetate dissolved in methanol-acetic acid-water solution with the molarity of 0.2M by using the pulverization method in an argon flow at the temperatures of 250-450°C. The temperature dependence of electrical and optical properties of the obtained layers were studied. The optical transmittance at the wavelengths of (300 -1000) nm has the values of 80-85%. The resistivity of ZnO thin layers grown at 450°C decreases from 33W•cm to 0,028 W•cm after annealing in hydrogen at 450°C during an hour. The radiative recombination is related to the electron transitions to the deep levels and band to band transitions at the charge carriers transitions with the LO type phonons.

In the present work, we report on development of three-dimensional flexible architectures consisting of an extremely porous three-dimensional Aerographite (AG) backbone decorated by InP micro/nanocrystallites grown by a single step hydride vapor phase epitaxy process. The systematic investigation of the hybrid materials by scanning electron microscopy demonstrates a rather uniform spatial distribution of InP crystallites without agglomeration on the surface of Aerographite microtubular structures. X-ray diffraction, transmission electron microscopy and Raman scattering analysis demonstrate that InP crystallites grown on bare Aerographite are of zincblende structure, while a preliminary functionalization of the Aerographite backbone with Au nanodots promotes the formation of crystalline In2O3 nanowires as well as gold-indium oxide core-shell nanostructures. The electromechanical properties of the hybrid AG-InP composite material are shown to be better than those of previously reported bare AG and AG-GaN networks. Robustness, elastic behavior and excellent translation of the mechanical deformation to variations in electrical conductivity highlight the prospects of AG-InP applications in tactile/strain sensors and other device structures related to flexible electronics.

Au fost obținute celule fotovoltaice (CF) cu heterojoncțiunea nCdS-pInP și strat intermediar epitaxial poInP, fiind cercetate proprietățile lor electrice și fotoelectrice. Grosimile straturilor pInP și al celui frontal nCdS au variat respectiv în intervalul 2,7...6,2 – 0,9...3,6 µm în dependență de durata de depunere. S-a constatat că parametrii fotoelectrici au valorile maximale pentru grosimile de 4,5...5 µm pentru stratul poInP și de 0,9 µm pentru stratul nCdS, eficiența maxi­mală a CF cu structura n+CdS-po-p+InP fiind de 14,6% (100 mW×cm-2).PHOTOVOLTAIC CELLS WITH n+CdS-po-p+InP HETEROJUNCTION: TEHNOLOGICAL APPLICATIONS, METHODS AND RESEARCH RESULTSPhotovoltaic cells (PVC) with nCdS-pInP heterojunction and an intermediate poInP epitaxial layer were obtained and their electrical and photoelectric properties were investigated. The thicknesses of the pInP layer and of the nCdS frontal layer varied in the range of 2.7 to 6.2 μm and 0.9 to 3.6 μm respectively, depending on the deposition time. It was found that photoelectric parameters have maximum values when the thickness of poInP layer is of 4.5 ... 5 μm and for nCdS layer is of 0.9 μm, the maximum efficiency of PCV with the structure n+CdS-po-p+InP was of 14.6% (100 mW×cm-2).

Au fost studiate caracteristicile capacitate-tensiune-conductabilitate-frecvenţă ale homo­joncţi­uni­lor n+-p°-p+InP cu şi fără strat frontal n+CdS obţinute cu aplicarea tehnologiilor din faza gazoasă în sistemul In-PCl3-H2 şi în volum cvasiînchis. S-a stabilit că distribuirea impurităţilor în regiunea sarcinii de baraj în astfel de joncţiuni este cu gradient liniar, iar la frecvenţele de 7…10 MHz impendanţa structurii este determinată de rezistenţa inductivă. Concentraţia stărilor super­ficiale pentru structurile n+-p°-p+InP cu strat frontal de n+CdS este cu un ordin mai mică decât fără acest strat, ceea ce va spori eficienţa CF obţinute în baza lor.CAPACITANCE AND ELECTRICAL CONDUCTIVITY STUDIES OF P-INP JUNCTIONSThe capacitance –voltage-conductivity-frequency dependencies of n+-po-p+InP with and without n+CdS frontal layer, obtained by using of gaseous phase epitaxial technology in a In-PCl3-H2 system and deposition in a quasi-closed volume, were studied. It was established that the impurity distribution in the space charge region of such junctions is of a linear gradient, and at the frequencies of 7…10 MHz the structure impedance is determined by the inductance resistance. The surface state concentration in n+-po-p+InP structures with the n+CdS frontal layer is by an order of magnitude lower than in the same structures without it, which can enhance the efficiency of solar cells based on them.

Au fost obţinute homojoncţiuni n-pInP cu strat intermediar p-InP crescut repetat prin metoda HVPE cu sau fără strat frontal nCdS şi au fost cercetate proprietăţile electrice şi fotoelectrice ale acestora. S-a constatat că depunerea stratului intermediar măreşte fotosensibilitatea homostructurilor cu 15…20%. Eficienţa energetică a CF cu structura n+CdS-n+InP-p-InP-p+InP constituie 13,5% pentru fluxul luminos incident de 100 mW×cm-2. Eficienţa CF cu heterostructura nCdS-pInP şi cu strat intermediar similar creşte cu 27%, în comparaţie cu CF cu homostructura n-p--pInP şi cu strat frontal nCdS, având valoarea de 17,3%. Se conturează posibilitatea reală de mărire a eficienţei CF de acest tip.FOTOVOLTAIC CELLS WITH HOMOJUNCTIONS IN InP: REZULTS AND COMPARISONSElectrical and photoelectrical properties of InP p-n homojunctions with an intermediate p-InP layer repeatedly grown by HVPE method, with and without frontal nCdS layer were produced and studied. It was found that the deposition of this intermediate p-InP layer increases the cells photosensitivity by 15 ... 20%. The solar energy conversion efficiency of photovoltaic cell (PC) with n+CdS-n+InP-p-InP-p+InP structure is 13.5% at the illumination of 100 mW.cm-2. The efficiency of the PC based on nCdS-pInP heterostructure and an analogic intermediate layer increases to 27% compared with the PC based on n-p--pInP homostructure having a frontal nCdS layer has an efficiency of 17.3%. The possibility of increasing of the efficiency of this PC type is formulated.

Au fost studiate proprietăţile electrice şi fotoelectrice ale heterojoncţiunilor nCdS-pInP cu şi fără strat epitaxial inter-mediar poInP. S-a stabilit că la polarizări directe în mecanismul de transport al curentului predomină procesele de recom-binare în regiunea de sarcină spaţială. La polarizări inverse predomină procesele de tunelare. Prezenţa stratului epitaxial poInP depus repetat măreşte ISC până la 28,2 mA·cm-2, UCD până la 0,780 V, iar eficienţa conversiei energiei până la 15% la 300 K şi iluminare 100 mW/cm2. Fotosensibilitatea CF nCdS-poInP-pInP corespunde intervalului λ=550...950 nm cu un maximum plat localizat în intervalul λ=700...850 nm.HETEROJONCTION nCdS–pInP FOTOVOLTAIC CELLSElectrical and photoelectrical properties of nCdS-pInP hetero-junctions with and without intermediate poInP epitaxial layer were studied. It was established that the current flow mechanism at direct biases is determined mainly by the recombi-nation processes in the space charge region of the junction. At the reverse biases the tunneling processes are predominant. The presence of poInP layer leads to the photo-electrical parameters enhancing of hetero-junction: short circuit current increases up to 28,2 mA·cm -2, open circuit voltage up to 0,780V and the efficiency of solar energy conversion up to 15 % (at 300 K and illumination of 100mw/cm2). The photo-sensitivity of nCdS- poInP -pInP is in the wavelength region of λ= 550-950nm with a maximum localized to λ=700-850nm.

A fost studiată influenţa tratării termice la temperaturi ridicate în azot sau în vid asupra proprietăţilor stra­turilor de GaN depuse pe siliciu prin metoda reacţiilor chimice de transport în sistemul (H2-NH3-HCl-Ga-Al), (HVPE). În spec­trele de fotoluminescenţă (FL), la 300 K, ale straturilor netratate se evidenţiază două fâşii de recombinare radiantă, cu maximele la 370 şi 555 nm. La tratarea în azot intensitatea fâşiei 370 nm creşte, iar la tratarea în vid – descreşte. Inten­sitatea benzii galbene (555 nm), la tratare în ambele medii, scade neesenţial. Se demonstrează că parametrii electrici ai straturilor pot fi, de asemenea, modificaţi prin metoda tratării termice în azot sau în vid, precum şi prin durata de tratare. The influence of high temperature annealing in nitrogen or vacuum on properties of GaN layers deposited on Si(111) by HVPE mehodThe influence of high temperature annealing in nitrogen and vacuum of GaN layers deposited by chemical reactions transport (HVPE) in (H2-NH3-HCl-Ga-Al) system on their properties was studied. In the photo­luminescence (PL) spectra at 300 K of the untreated layers two recombination radiation bands with the plats at 370 nm and 555 nm were revealed. At the layers heat treatment the intensity of the radiation band at 370 nm increases when at the intensity of the yellow band (555 nm) decreases not significantly at the treatment in the both ambiances. It was shown that the electrical parameters could as well be controlled by using heat treatment in nitrogen and vacuum and this depends on the annealing duration.

The aim of this paper is to study the loss of gallium (Ga) and arsenic (As) loss during the sedimentation of gallium arsenate (GaAsO4) from waste solutions of GaAs epitaxial production by chloride method. The solid wastes of this semiconductor manufacturing process are removed from technological equipment by dissolution in an acidic etching solution. In order to recover valuable Ga and very toxic As from these waste solutions we proposed to precipitate them as gallium arsenate. Experiments have been conducted to determine the migration of the two elements in filtrate and washing solutions as a function of pH for both model and real industrial wastes. It has been determined the optimal interval of pH for sedimentation, the losses of Ga and As present 0,01-0,053%. For model solutions the sedimentation is optimal in the range of pH from 3,2 to 4,3, while in the case of real waste solution this interval is 3,6-5,0. Comparative evaluation of the precipitation efficiency revealed that for model solutions the arsenic loss during the precipitation is higher (0,5%), and this can be explained by a different ratio of initial Ga3 and AsO4 3- in model and real solutions. The results described in this paper provide important guidelines for the sedimentation of gallium arsenate from acidic waste solutions and indicate an overall efficiency of the process that could lead to savings in cost and process time for industrial effluent treatment technologies.

Having the goal to recover gallium (Ga) and arsenic (As) from technological wastes derived from the process of growing epitaxial gallium arsenide structures, it is proposed to extract gallium arsenate (GaAsO4) by precipitation and filtration of the sediment. In this paper it is proposed to measure the concentrations of Ga and As by means of the atomic absorption spectrometer AAnalyst 800 directly in the filtrate solution. We compare the results obtained by two methods of elemental Ga and As atomization: flame and thermal atomization. The values of Ga and As concentrations in filtrate are function of pH for solutions containing 1- 680 mg/1 of Ga and 55-880 mg/1 of As. The developed method can be used to study and further optimize the technological process.