With vibrant colours and simple, room-temperature processing methods, electrochromic polymers have attracted attention as active materials for flexible, low-power-consuming devices. However, slow switching speeds in devices realized to date, as well as the complexity of having to combine several distinct polymers to achieve a full-colour gamut, have limited electrochromic materials to niche applications. Here we achieve fast, high-contrast electrochromic switching by significantly enhancing the interaction of light--propagating as deep-subwavelength-confined surface plasmon polaritons through arrays of metallic nanoslits, with an electrochromic polymer--present as an ultra-thin coating on the slit sidewalls. The switchable configuration retains the short temporal charge-diffusion characteristics of thin electrochromic films, while maintaining the high optical contrast associated with thicker electrochromic coatings. We further demonstrate that by controlling the pitch of the nanoslit arrays, it is possible to achieve a full-colour response with high contrast and fast switching speeds, while relying on just one electrochromic polymer.

We demonstrate active switching of light transmission through nanoplasmonic devices using electrochromic Polyaniline thin films, and achieve extraordinary transmission modulation by switching it between its reduced (leucoemeraldine) and partially oxidized (emeraldine) states.

Surface plasmon polaritons have attracted attention for energy applications such as photovoltaic and photoelectrochemical cells because of their ability to improve optical absorption in thin films. We show that surface plasmon polaritons enhance absorption most significantly in materials with small positive real permittivity and large positive imaginary permittivity, e.g. organics or CdTe. Additional losses, accounting for dissipation in the metal and the existence of a cutoff frequency above which polaritons are no longer bound, are incorporated into efficiency calculations. Owing to these losses, devices with optical absorption based solely on SPPs will necessarily always have a lower efficiency than that predicted by the Shockley-Queisser limit. Calculations are presented for specific materials, including crystalline and amorphous Si, GaAs, CdTe, a P3HT:PCBM blend, α-Fe2O3 and rutile TiO2, as well as for general materials of arbitrary permittivity. Guidelines for selecting absorber materials and determining whether specific materials are good candidates for improving optical absorption with SPPs are presented.

We demonstrate the design, simulation and experimental realization of a single aperiodic slit-groove plasmonic device that exhibits angle-selectable RGB color response at optical frequencies, as well as a high quality factor and optical contrast.

AbstractA thin film of quantum dots (QD) was used to visualize the local photo‐response of polycrystalline CdTe solar cells by down‐converting an electron beam of high energy to photons of visible light. The efficient photon generation in the QD film is compared to cathodoluminescence of the high‐purity bulk semiconductors and phosphor.

We report a fast, versatile photocurrent imaging technique to visualize the local photo response of solar energy devices and optoelectronics using near-field cathodoluminescence (CL) from a homogeneous quantum dot layer. This approach is quantitatively compared with direct measurements of high-resolution Electron Beam Induced Current (EBIC) using a thin film solar cell (n-CdS / p-CdTe). Qualitatively, the observed image contrast is similar, showing strong enhancement of the carrier collection efficiency at the p-n junction and near the grain boundaries. The spatial resolution of the new technique, termed Q-EBIC (EBIC using quantum dots), is determined by the absorption depth of photons. The results demonstrate a new method for high-resolution, sub-wavelength photocurrent imaging measurement relevant for a wide range of applications.

Sputter-deposited films of alpha-Fe2O3 of thickness 600 nm were investigated as photoanodes for solar water splitting and found to have photocurrents as high as 0.8 mA/cm(2) at 1.23 V vs the reversible hydrogen electrode (RHE). Sputter-deposited films, relative to nanostructured samples produced by hydrothermal synthesis,(1,2) permit facile characterization of the role and placement of dopants. The Sn dopant concentration in the alpha-Fe2O3 varies as a function of distance from the fluorine-doped tin oxide (FTO) interface and was quantified using secondary ion mass spectrometry (SIMS) to give a mole fraction of cations of approximately 0.02% at the electrolyte interface. Additional techniques for determining dopant density, including energy dispersive X-ray spectroscopy (EDS), electron energy loss spectroscopy (EELS), electrochemical impedance spectroscopy (EIS), and conductivity measurements, are compared and discussed. Based on this multifaceted data set, we conclude that not all dopants present in the alpha-Fe2O3 are active. Dopant activation, rather than just increasing surface area or dopant concentration, is critical for improving metal oxide performance in water splitting. A more complete understanding of dopant activation will lead to further improvements in the design and response of nanostructured photoanodes.