This work reports the first results of a new generation plasma-enhanced chemical vapor deposition (PECVD) reactor manufactured by Roth and Rau. This large area parallel plate reactor has been especially designed for the manufacturing of silicon heterojunction solar cells which are made of very thin amorphous silicon films over monocrystalline silicon substrates. Layer thickness uniformity below ± 3 % is reported for both intrinsic and doped layer over a 400 × 400 mm 2 area. Moreover, it is shown that the passivation quality is excellent with life-times up to 4.15 ms on n-type FZ silicon substrates. A ± 0.6 % uniformity in open circuit voltage (mean value of 701.4 mV) is achieved over 32 devices having a 4 cm 2 area and an average conversion efficiency of 19.5 %.

The goal to achieve grid parity for photovoltaics in the near future is stimulating the development of high efficiency solar cell technologies which has spark off strong activities in silicon heterojunction solar cell development in the recent past leading to a number of high efficiency devices at or beyond 20% efficiency in different laboratories. Heterojunction silicon solar cells show interesting properties which are distinct from those of standard crystalline silicon solar cells due to the combination of thin film and crystalline cell technologies. This paper focuses on device properties of the heterojunction technology (HJT) cell developed at Roth & Rau such as temperature and irradiation dependent performance and cell stability under accelerated stress tests. The results demonstrate an improved energy yield of the Roth & Rau HJT cells that is to be expected under realistic operation conditions.

This paper presents a theoretical framework about interface state creation rate from Si–H bonds at the Si∕SiO2 interface. It includes three main ways of bond breaking. In the first case, the bond can be broken, thanks to the bond ground state rising with an electrical field. In two other cases, incident carriers will play the main role either if there are very energetic or very numerous but less energetic. This concept allows one to physically model the reliability of metal oxide semiconductor field effect transistors, and particularly negative bias temperature instability permanent part, and channel hot carrier to cold carrier damage.

Ce travail rapporte l’expérience des auteurs dans la démarche actuelle d’accréditation (certification) dont ils ont fait l’objet. Cette étude n’est autre que le fruit d’un travail multidisciplinaire résultant de la coopération des différents thérapeutes (médecins de médecine physique et de réadaptation [MPR] et personnel paramédical) prenant en charge les patients. Il s’agit, comme les tutelles le recommandent, d’une analyse critique de l’existant en ce qui concerne nos pratiques professionnelles et partant de là, d’une proposition d’axes d’amélioration dans tous les secteurs d’activités. Le sujet étudié pose un des principaux problèmes de santé publique et concerne la prise en charge des accidents vasculaires cérébraux (AVC) sus-tentoriels à la phase initiale dans un service de MPR.