The mainstream production of optoelectronic and electronic devices based on epitaxial III-V compound semiconductor materials largely employs metalorganic vapor phase epitaxy, a process first demonstrated for devices in the 1970’s. For this special issue in honor of Prof. P. Daniel Dapkus, this paper first briefly reviews his early contributions that spearheaded the interest of MOVPE as a III-V device epitaxy process. Next, the paper discusses MOVPE reactor development in the 1980’s, which at the time was one of the key challenges in establishing MOVPE technology as a reliable epitaxy manufacturing process. The approach combined physical modeling and numerical simulations of reactor processes followed by materials and device demonstrations. Highly uniform performance metrics of AlGaAs/AlGaAs quantum-well diode lasers and two-dimensional monolithic surface-emitting lasers were demonstrated with excellent run-to-run reproducibility. This foundational approach advanced efforts to standardize reactors and subsequent scaling for high-throughput production.

Since the days of Hertz, radio transmitters have evolved from rudimentary circuits emitting around 50 MHz to modern ubiquitous Wi-Fi devices operating at gigahertz radio bands. As wireless data traffic continues to increase there is a need for new communication technologies capable of high-frequency operation for high-speed data transfer. Here we give a proof of concept of a new compact radio frequency transmitter based on a semiconductor laser frequency comb. In this laser, the beating among the coherent modes oscillating inside the cavity generates a radio frequency current, which couples to the electrodes of the device. We show that redesigning the top contact of the laser allows one to exploit the internal oscillatory current to drive an integrated dipole antenna, which radiates into free space. In addition, direct modulation of the laser current permits encoding a signal in the radiated radio frequency carrier. Working in the opposite direction, the antenna can receive an external radio frequency signal, couple it to the active region and injection lock the laser. These results pave the way to new applications and functionality in optical frequency combs, such as wireless radio communication and wireless synchronization to a reference source.

Since the days of Hertz, radio transmitters have evolved from rudimentary circuits emitting around 50 MHz to modern ubiquitous Wi-Fi devices operating at gigahertz radio bands. As wireless data traffic continues to increase, there is a need for new communication technologies capable of high-frequency operation for high-speed data transfer. Here, we give a proof of concept of a compact radio frequency transmitter based on a semiconductor laser frequency comb. In this laser, the beating among the coherent modes oscillating inside the cavity generates a radio frequency current, which couples to the electrodes of the device. We show that redesigning the top contact of the laser allows one to exploit the internal oscillatory current to drive a dipole antenna, which radiates into free space. In addition, direct modulation of the laser current permits encoding a signal in the radiated radio frequency carrier. Working in the opposite direction, the antenna can receive an external radio frequency signal, couple it to the active region, and injection lock the laser. These results pave the way for applications and functionality in optical frequency combs, such as wireless radio communication and wireless synchronization to a reference source.

MOVPE technology has rapidly grown from a laboratory research novelty in the 1960's to the dominant production method for epitaxial materials used in high-performance compound semiconductors devices. In order for MOVPE to be adopted as an efficient and high-yield process, the MOVPE reactor had to be designed and operated in a manner to produce uniform epitaxial layer structures with a high degree of controllability and reproducibility. In commemoration of 50 years of MOVPE technological advancement, this paper reviews the early history of MOVPE reactor development and foundational advances that were critical for development of multi-wafer capacity production reactors having high yield and reproducibility.

Bi-functional active regions, capable of light generation and detection at the same wavelength, allow a straightforward implementation of the mid-infrared quantum cascade technology for integrated photonics. Different parts of the chip can be used for laser and for photodetectors. Potential applications are on-chip integrated sensors or lasers with integrated power monitoring capabilities. In the first bi-functional designs, wavelength matching was achieved using thicker barriers and reduced energy splitings between the extraction levels, but with the drawback of a reduced laser performance. The following introduction of the horizontal-vertical extraction scheme was a significant step towards high performance laser operation. In this work, we combine our design experience with optimized, laterally overgrown waveguides and refined bandstructure modelling. The device was designed for emission at 8 μm to show that wavelength matching can also be achieved at longer wavelengths, where it becomes increasingly difficult due to the smaller ratio between photon energy and LO-phonon energy. Graded interfaces were used in the bandstructure design to consider the behaviour of the MOVPE growth. In pulsed mode a threshold current density of 1.3 kA/cm 2 and a total wallplug efficiency of over 10% was achieved. In continuous-wave operation, the device emits 80mW output power in an episide-up configuration. A much higher performance can be expected after episide-down mounting on AlN substrates. In detector operation the device has a responsivity at the emission wavelength of about 20mA/W.

Bifunctional active regions, capable of light generation and detection at the same wavelength, allow a straightforward realization of the integrated mid-infrared photonics for sensing applications. Here, we present a high performance bifunctional device for 8 μm capable of 1 W single facet continuous wave emission at 15 °C. Apart from the general performance benefits, this enables sensing techniques which rely on continuous wave operation, for example, heterodyne detection, to be realized within a monolithic platform and demonstrates that bifunctional operation can be realized at longer wavelength, where wavelength matching becomes increasingly difficult and that the price to be paid in terms of performance is negligible. In laser operation, the device has the same or higher efficiency compared to the best lattice-matched QCLs without same wavelength detection capability, which is only 30% below the record achieved with strained material at this wavelength.

The quality of epitaxial layers in quantum cascade lasers (QCLs) has a primary impact on QCL performance, and establishing correlations between epitaxial growth and materials properties is of critical importance for continuing improvements. We present an overview of the growth challenges of these complex QCL structures; describe the metalorganic vapor phase epitaxy growth of AlInAs/GaInAs/InP QCL materials; discuss materials properties that impact QCL performance; and investigate various QCL structure modifications and their effects on QCL performance. We demonstrate uncoated buried-heterostructure 9.3-mu m QCLs with 1.32-W continuous-wave output power and maximum wall plug efficiency (WPE) of 6.8%. This WPE is more than 50% greater than previously reportedWPEs for unstrained QCLs emitting at 8.9 mu m and only 30% below strained QCLs emitting around 9.2 mu m.

The measured emission wavelengths of AlInAs/GaInAs/InP quantum cascade lasers (QCLs) grown by metal organic vapor phase epitaxy (MOVPE) have been reported to be ~ 0.5–1µm longer than the designed QCL wavelength. This work clarifies the origin of the red-shifted wavelength. It was found that AlInAs/GaInAs heterointerfaces are compositionally graded over ~ 2.5–4.5nm, and indium accumulates at the AlInAs-to-GaInAs interface. Thus, the as-grown QCLs are far from the ideal abrupt interfaces used in QCL modeling. When graded layers are incorporated in QCL band structure and wavefunction calculations, the emission wavelengths are red shifted. Furthermore, we demonstrate that QCLs with graded interfaces can be designed without compromising performance and show greatly improved correlation between designed and measured emission wavelength. QCLs were designed for emission between 7.5 and 8.5µm. These structures were grown and wet-etched ridge devices were fabricated. The QCLs exhibit room temperature peak powers exceeding 900mW and pulsed efficiencies of ~8 to 10%.

We report on a study of the effects of intentional thickness and doping variations on QCL performance. The measured QCL data had very similar trends to those predicted by an in-house QCL model. It was found that absolute changes to the QCL period had a very small effect on emission wavelength (wavelength/period change <10nm/Å), whereas the complementary thickness changes between the wells and barriers had a large effect (wavelength/thickness change=550nm/Å). The threshold voltage also changed with these variations and generally agreed well with the model. We show through modeling and experiments that intentional structure variations can have largely different magnitudes of effect on QCL performance.

We report the observation of a clear single-mode instability threshold in continuous-wave Fabry-Perot quantum cascade lasers (QCLs). The instability is characterized by the appearance of sidebands separated by tens of free spectral ranges (FSR) from the first lasing mode, at a pump current not much higher than the lasing threshold. As the current is increased, higher-order sidebands appear that preserve the initial spacing, and the spectra are suggestive of harmonically phase-locked waveforms. We present a theory of the instability that applies to all homogeneously broadened standing-wave lasers. The low instability threshold and the large sideband spacing can be explained by the combination of an unclamped, incoherent Lorentzian gain due to the population grating, and a coherent parametric gain caused by temporal population pulsations that changes the spectral gain line shape. The parametric term suppresses the gain of sidebands whose separation is much smaller than the reciprocal gain recovery time, while enhancing the gain of more distant sidebands. The large gain recovery frequency of the QCL compared to the FSR is essential to observe this parametric effect, which is responsible for the multiple-FSR sideband separation. We predict that by tuning the strength of the incoherent gain contribution, for example by engineering the modal overlap factors and the carrier diffusion, both amplitude-modulated (AM) or frequency-modulated emission can be achieved from QCLs. We provide initial evidence of an AM waveform emitted by a QCL with highly asymmetric facet reflectivities, thereby opening a promising route to ultrashort pulse generation in the mid-infrared. Together, the experiments and theory clarify a deep connection between parametric oscillation in optically pumped microresonators and the single-mode instability of lasers, tying together literature from the last 60 years.

There are a number of military and commercial applications for high-power laser systems in the mid-to-long-infrared wavelength range. By virtue of their demonstrated watt-level performance and wavelength diversity, quantum cascade laser (QCL) and amplifier devices are an excellent choice of emitter for those applications. To realize the power levels of interest, beam combining of arrays of these emitters is required and as a result, array technology must be developed. With this in mind, packaging and thermal management strategies were developed to facilitate the demonstration of a monolithic QCL array operating under CW conditions. Thermal models were constructed and simulations performed to determine the effect of parameters such as array-element ridge width and pitch on gain region temperature rise. The results of the simulations were considered in determining an appropriate QCL array configuration. State-of-the-art micro-impingement cooling along with an electrical distribution scheme comprised of AlN multi-layer technology were integrated into the design. The design of the module allows for individual electrical addressability of the array elements, a method of phase control demonstrated previously for coherent beam combining of diode arrays, along with access to both front and rear facets. Hence, both laser and single-pass amplifier arrays can be accommodated. A module was realized containing a 5 mm cavity length monolithic QCL array comprised of 7 elements on 450 m pitch. An output power of 3.16 W was demonstrated under CW conditions at an emission wavelength of 9μm.

We present a method to integrate quantum cascade lasers with passive components using proton implantation. Proton implantation reduces the intersubband and free-carrier absorption optical loss. We have measured a loss alpha=0.33 cm(-1) in proton implanted waveguides.

We present design, packaging and coherent beam combining of quantum cascade amplifier (QCA) arrays, measurements of QCA phase noise, the drive-current-to-optical-phase transfer function, and the small signal gain for QCAs.

We report on monolithic integration of active quantum cascade laser (QCL) materials with passive waveguides formed by using proton implantation. Proton implantation reduces the electron concentration in the QCL layers by creating deep levels that trap carriers. This strongly reduces the intersubband absorption and the free-carrier absorption in the gain region and surrounding layers, thus significantly reducing optical loss. We have measured loss as low as α = 0.33 cm−1 in λ = 9.6 μm wavelength proton-implanted QCL material. We have also demonstrated lasing in active-passive integrated waveguides. This simple integration technique is anticipated to enable low-cost fabrication in infrared photonic integrated circuits in the mid-infrared (λ ∼ 3–16 μm).

We demonstrate active hyperspectral imaging using a quantum-cascade laser (QCL) array as the illumination source and a digital-pixel focal-plane-array (DFPA) camera as the receiver. The multi-wavelength QCL array used in this work comprises 15 individually addressable QCLs in which the beams from all lasers are spatially overlapped using wavelength beam combining (WBC). The DFPA camera was configured to integrate the laser light reflected from the sample and to perform on-chip subtraction of the passive thermal background. A 27-frame hyperspectral image was acquired of a liquid contaminant on a diffuse gold surface at a range of 5 meters. The measured spectral reflectance closely matches the calculated reflectance. Furthermore, the high-speed capabilities of the system were demonstrated by capturing differential reflectance images of sand and KClO3 particles that were moving at speeds of up to 10 m/s.

We demonstrate a multi-wavelength distributed feedback (DFB) quantum cascade laser (QCL) operating in a lensless external micro-cavity and achieve switchable single-mode emission at three distinct wavelengths selected by the DFB grating, each with a side-mode suppression ratio larger than 30 dB. Discrete wavelength tuning is achieved by modulating the feedback experienced by each mode of the multi-wavelength DFB QCL, resulting from a variation of the external cavity length. This method also provides a post-fabrication control of the lasing modes to correct for fabrication inhomogeneities, in particular, related to the cleaved facets position.

We demonstrate tapered quantum cascade lasers monolithically integrated with a distributed Bragg reflector acting as both a wavelength-selective back mirror and a transverse mode filter. Each of the 14 devices operates at a different wavelength between 9.2 and 9.7 μm, where nine devices feature single-mode operation at peak powers between 0.3 and 1.6 W at room temperature. High output power and excellent beam quality with peak brightness values up to 1.6 MW cm−2 sr−1 render these two-terminal devices highly suitable for stand-off spectroscopy applications.

An index-guided tapered quantum cascade laser emitting near 9.5 μm with sloped sidewalls and no anti-reflection coating is presented, and the performance for devices with taper half-angles of 1° and 2° is investigated. The 1° device delivers up to 2.5 W of peak optical power at room temperature with beam quality-factor M2 = 2.08, while the two-degree device outputs 3.8 W with M2 = 2.25 for a maximum brightness of 1.87 MW cm−2 sr−1.

AlInAs/GaInAs superlattices (SLs) with barrier and well layers of various thicknesses were grown by organometallic vapor phase epitaxy to optimize growth of quantum cascade lasers (QCLs). High-resolution x-ray diffraction data of nominally lattice-matched SLs show a systematic shift toward more compressively strained SLs as the barrier/well layer thicknesses are decreased below about 10nm. This shift is attributed to In surface segregation in both AlInAs and GaInAs. This shift is compensated for in the growth of ultra-thin layers in QCL structures. QCLs with tapered gain regions and emitting at 9.6μm are demonstrated with peak power as high as 5.3W from one facet at 20°C.