In this paper, we focus on evaluating the performance of the commercial branches of a large Canadian bank using data envelopment analysis. Two production models are considered in this country-wide evaluation. One model, looking directly at resource usage, is most useful to the branch manager. The other model, incorporating financial results, is more geared towards senior management. We introduce non-discretionary factors to reflect specific aspects of the environment a branch is operating in, such as risk and economic growth rate of the region. Both input and output multipliers are constrained by incorporating market prices as well as managerial preferences, in order to get effectiveness measures. The cost-minimisation study led to valuable results pertaining to the performance of individual branches. Notable is the methodology introduced here that shows how to present graphical and numeric outcomes to managers. Gap maps, pie charts and target tables are produced for each branch to provide performance goals for the managers. Useful information has also been obtained at the district level. Output oriented models were analysed to reflect the Bank's recent emphasis towards growth in some areas.

The banking industry in Canada is essentially an oligopoly with five large participants controlling about 90% of the market. To evaluate the industry's performance over time, we need to deal with the problem of a small number of DMU's compared to the number of relevant inputs and outputs. To overcome this problem we use data envelopment analysis (DEA) window analysis, whereby efficiency scores for the 20 year period 1981–2000 are obtained. To measure productivity changes over time, Malmquist indices can be calculated from DEA scores. Using DEA window analysis scores, however, raise the question of how to define the “same period frontier” in a DEA window analysis. We show that for both the adjacent and the base period Malmquist index and for all suggested definitions of same period frontier, the standard decomposition into frontier shift and catching up effects gives inappropriate results when Malmquist indices are based on DEA window analysis scores.

Boron Nitride coatings have been deposited by plasma-assisted chemical vapour deposition (PACVD) from BCl3/N-2/H-2/Ar gas mixtures in a hot wall capacitively coupled radio-frequency (13.56 MHz) reactor. The nature of active species in the plasma during deposition was determined by Optical Emission Spectroscopy (OES) and Mass Spectrometry (MS), The plasma characterisation was performed as follows. first, an Ar/H-2 plasma was studied in order to understand the influence of molecular hydrogen in the discharge mixture. Then the two precursors N-2 and BCl3 were added and the new gas mixture studied. Finally the deposition plasma was investigated. These characterisations were correlated to the microstructure and c-BN concentrations determined by Scanning Electron Microscopy (SEM) and Fourier Transformed Infrared Spectroscopy (FTIR).The study demonstrates the major role of atomic hydrogen on the possible mechanisms leading to BN deposition:the introduction of hydrogen in Ar/N-2 controls the nature of the NHx (from N to NH3) species in the gasphase, These results are correlated to the relative amount of NH groups in the films,by a modification of the excitation state of the plasma (n(e), T-e) the introduction of H-2 can increase the dissociation rate of the boron precursor BCl3 and, reacting with chlorine, leads to the formation of HCl, This corresponds to an increase in the growth rate of the coatings.Finally, BN samples containing 5% of cubic phase were treated by Ar, Ar/H2 and Ar/Cl-2 plasmas. These post treatments demonstrated that ion assisted preferential etching of h-BN by H or Cl atoms could be used to obtain large concentrations of c-BN coatings and possibly offer a new route for deposition of low stress cubic boron nitride, (C) 1998 Elsevier Science Ltd. All rights reserved.

Thin films composed of a mixture of hexagonal and cubic boron nitride (h-BN/c-BN) were treated by Ar, Ar/H 2 and Ar/Cl 2 plasma in a radio frequency (RF) capacitively coupled discharge. The c-BN concentration in the film, as measured by Fourier transformed infrared spectroscopy (FTIR), was increased by post-treatment under the described conditions. The Ar plasma used to identify the ion bombardment effect resulted in a slight increase in c-BN concentration. Ar/H 2 and Ar/Cl 2 treatments were more efficient in increasing the c-BN concentration and illustrated chemical effects and ion-assisted preferential etching of the h-BN by atomic hydrogen and Cl ions. These preliminary results are discussed in view of a new deposition route for stress-reduced c-BN.

BN thin films have been synthesized by r.f. Plasma Enhanced Chemical Vapor Deposition (PECVD) from BCl3/ N-2 / H-2 / Ar mixtures. c-BN formation has been studied through correlations between gas phase characterization (by Optical Emission Spectroscopy, Mass Spectrometry and electrical measurements) and thin film analysis (by Fourier Transformed Infra Red Spectrometry for structure determination).In particular, the occurrence of physical and possible chemical mechanisms is studied with the help of post-treatments of as-deposited BN coatings in pure Ar, Ar/H-2 and Ar/Cl-2 plasma mixtures. It is shown that, in addition to the well known ion-induced formation of the cubic phase, chemical etching also occurs, due to the presence of hydrogen and chlorine species, which leads to a relative increase in the cubic content of the thin film.

Of great importance to management, the computation of trade-offs presents particular difficulties within DEA since the piecewise linear nature of the envelopment surfaces does not allow for unique derivatives at every point. We present a comprehensive framework for analyzing marginal rates, and directional derivatives in general, on DEA frontiers. A useful characterization of these derivatives at given points can be provided in terms of the ranges they can take; equivalently, the bounds of these ranges correspond to derivatives “to the right”and “to the left” at these points. We present two approaches for their computation: first, the dual equivalents calculation of minimum and maximum multiplier ratios / finite differences, and then a modified simplex tableau method. The simplex tableau method provides a more general application of the method introduced by Hackman et al. (1994) to generate any two-dimensional section of the isoquant and is a practical tool to generate level plots of the frontier. By giving a complete picture of trade-offs and allowing a better visualization of high dimensional production possibility sets, these tools can be very useful for managerial applications.

Boron nitride coatings have been synthesised by plasma-assisted chemical vapour deposition (PACVD) from a BCl3/N-2/H-2/Ar gas mixture in a hot wall capacitively coupled r.f. (13.56 MHz) system. The influence of the gas composition has been investigated in terms of the nature of active species in the plasma phase using optical emission spectroscopy and mass spectrometry. These characterisations have been correlated with microstructure, and the type of bonding in the deposited films was determined by scanning electron microscopy and Fourier transformed infrared spectroscopy.The study is focused on the major role of hydrogen on the possible mechanisms leading to BN deposition from this complex mixture. The characterisation was performed by steps. First, an Ar/H-2, plasma was studied in order to understand the influence of molecular hydrogen content. To this discharge were then added separately the two precursors N-2 and BCl3. Finally the deposition plasma was investigated.These characterisations have shown that: (a) a maximum of H atom density is obtained for a 15-30% H-2 in the Ar/H-2 plasma mixture; (b) the introduction of hydrogen in Ar/N-2 controls the nature of the NHx (from N to NH3) species in the pas phase. These results are correlated with the relative amount of NH bonding in the films; (c) by a modification of the excitation state of the plasma (o, eT) the introduction of H-2 can increase the dissociation rate of the boron precursor BCl3, and, reacting with chlorine, leads to the formation of HCl. This corresponds to an increase of the growth rate of the coatings, A high content of H-2 in the discharge (H-2 > 30%) is, however, detrimental to their quality; (d) we were also able to propose possible mechanisms leading to BN formation. (C) 1998 Elsevier Science S.A.

This work demonstrates that ion assisted etching of hexagonal boron nitride is possible in addition to sputtering because of the ion bombardment in rf plasma environments. In order to study the presence of possible physical and chemical mechanisms, post treatments of boron nitride coatings were performed using pure argon, Ar/H2, and Ar/Cl2 plasma mixtures. This study reveals the effects of ion bombardment, H/H2 atoms, and Cl/Cl2 on the h-BN content in the films. It was found that, in addition to ion bombardment, hydrogen atoms and even more efficiently Cl and/or Cl2 can be used as chemical etchants for sp2 bonded boron nitride.

This paper presents a best practice analysis of the Ontario based branches of a large Canadian bank. Consistent with managerial goals, the analysis focuses on the performance of branch personnel; it considers as outputs both transactions and maintenance work. To sharpen our efficiency estimates, we use DEA AR models with output multiplier constraints based on standard transaction and maintenance times. A model that adds similar constraints on the input multipliers, based on personnel salary, is used to find the cost efficient branches, and estimate “allocative” efficiency. Special emphasis is placed on quantifying and discussing the impact of model choice on the results. Post-hoc statistical tests are performed to investigate the impact of several external factors on personnel efficiency as well as the effects of efficiency on quality and profitability.

Boron nitride (BN) coatings have been deposited in a hot wall PACVD reactor with a capacitive coupling at 13.56 MHz, from BCl3/N2H2/Ar mixtures. The effect of ion bombardment and the hydrogen content on the nature of the BN phases (determined by Fourier transformed infra-red spectroscopy) is highlighted. Gas phase characterisation is performed by optical emission spectroscopy (OES), mass spectrometry (MS) and electrical measurements. The coatings properties are correlated to the plasma characteristics.It is confirmed that well defined ion bombardment conditions are required for c-BN formation. The hydrogen partial pressure in the gas phase plays another determining role on c-BN formation by its effect on the concentration of reactive species in the plasma and thus on the deposition rate. Hence, in addition to the ionic selective etching of the h-BN sites over the cubic sites commonly reported, a chemical effect (leading to preferential etching or reaction inhibition) due to the presence of the chlorine and atomic hydrogen species at the surface might occur.

Boron nitride coatings were obtained by r.f. plasma-enhanced chemical vapour deposition (PECVD) from a BCl3-N2-H2-Ar mixture. Preliminary results on the effect of the hydrogen content in the gas mixture are reported. The characterization of the coatings and the gas phase analysis are discussed. Variations in the hydrogen content in the plasma can account for the decrease in oxygen content, increase in chlorine content and change in the B/N ratio in the deposited material. The morphology of the coatings also depends on the hydrogen content in the gas phase.

Structural modelling has been used to investigate disorder effects in BN thin films. In particular, models of disorder have been developed to explain the apparent inconsistency in the experimental data (X-ray diffraction and infra-red spectroscopy) relative to boron nitride thin films grown by plasma-enhanced chemical vapour deposition on silicon substrates. Based on the infra-red spectroscopy data, which showed spectral lines typical of the planar sp2 BN hybridization, static disorder effects have been introduced in the model starting from the ordered hexagonal BN phase. The X-ray diffraction patterns calculated on the basis of the structural model are in good agreement with the experimental X-ray diffractograms.

Based on X-ray diffraction and infrared spectroscopy measurements, BN thin films grown by PECVD on silicon substrates have been studied with the aim of identifying the thin film phase. In a set of samples, while the infrared spectra showed characteristic bands of the hexagonal phase, X-ray diffraction patterns only displayed reflections belonging to the cubic BN phase. Therefore, structural models have been developed to explain the apparent inconsistency between the two sets of experimental data. In particular, static disorder effects - which have been introduced in the model starting from the sp2 hybridization of the ordered hexagonal phase, as suggested by the infra-red spectroscopy results - allowed a consistent interpretation of the X-ray diffraction patterns. For another set of samples, which also showed a characteristic hexagonal signal in the IR data, the XRD pattern could not be indexed with any of the BN phases. In this case, the presence of molecular and ionic phases, associated with impurities, was considered in structural modeling studies.

The Banking industry in Canada is essentially an oligopoly with 5 large and several small participants, together with over 35 foreign bank operations. It is also very highly regulated and this makes the participants act similarly in many instances. To evaluate the industry's performance over time, we use the five largest Canadian banks. Then, the problem of a small number of DMU's and a fairly large number of relevant inputs and outputs must be addressed. A production model for determining cost efficiency and an intermediation model for measuring organisational efficiency are introduced. Efficiency scores for the study period are obtained using DEA window analysis over a 20 year period. Productivity changes are then investigated using a variation of the Malmquist Index approach; hence, we can separate the catching up effect from efficiency changes over time due to technological advancements.