Semi-permanent upset sensitivity in DDR SDRAMs is investigated. A technique to reduce sensitivity is examined. The reduction extends to high LET regions for some heavy ion induced upsets.

We present Single Event Effect (SEE) and Total Ionizing Dose (TID) data for 1 Gbit DDR SDRAMs (90 nm CMOS technology) as well as comparing this data with earlier technology nodes from the same manufacturer.

Heavy ion induced SEEs for the Quiet Series FACT devices are presented. SETs take place in devices with memory elements as well as in simple gates. These devices are tolerant to SEEs at low LET values.

Single event effect vulnerabilities of currently available commercial-off-the-shelf (COTS) field programmable gate arrays (FPGAs) have been measured. They are compared with those observed in older COTS devices as well as with some radiation hardened devices

Single event effect vulnerabilities of currently available commercial-off-the-shelf (COTS) field programmable gate arrays (FPGAs) have been measured. They are compared with those observed in older COTS devices as well as with some radiation hardened devices

A number of bipolar operational amplifiers have been evaluated for single event effects for possible use in a space application. Various trigger thresholds were used to estimate the distribution of transient amplitudes.

SEE sensitivity variabilities emerge in microcircuit design iterations and fabrication changes. They encompass various types of SEE. While some SEE sensitivity variabilities remain acceptable, others are not tolerated for space applications.

We report on single event upsets (SEU) and single event latchup (SEL) sensitivities under irradiation by protons and heavy ions for a variety of non-hardened high density static random access memories (SRAMs) with sub-micron feature sizes. The results are compared with previously measured sensitivities for similar devices with larger features. We discuss the sensitivity trends with temperature and examine other effects such as stuck bits.

Heavy ion induced single event transients for various Advanced BiCMOS Technology (ABT) buffers and transceivers are presented. For our test samples there is a wide variation in the transient sensitivity. Some test samples are sensitive to single event latch-up.

High density memory devices are sensitive to heavy ions resulting in hard errors (stuck bits). Even though their sensitivities vary, these devices with sub-micron feature sizes are not strongly affected by ion induced hard errors without any accumulation of total dose. However, their sensitivity to stuck bits appears to rise as the total dose increases to a certain level.

Proton-induced single event effects of a set of microcircuits are compared with effects due to heavy ions. Even though some microcircuits show a relatively high sensitivity to heavy ions, they do not have a corresponding sensitivity to protons.

We present a compendium of optocoupler radiation test data including data on neutron, proton and heavy ion displacement damage (DD), single event transients (SET) and degradation due to total ionizing dose (TID). Proton data includes ionizing and non-ionizing damage mechanisms.

State of the art programmable devices are utilizing advanced processing technologies, non-standard circuit structures, and unique electrical elements in commercial-off-the-shelf (COTS)-based, high-performance devices. This paper discusses that the above factors, coupled with the systems application environment, have a strong interplay that affect the radiation hardness of programmable devices and have resultant system impacts in (1) reliability of the unprogrammed, biased antifuse for heavy ions (rupture), (2) logic upset manifesting itself as clock upset, and (3) configuration upset. General radiation characteristics of advanced technologies are examined and manufacturers' modifications to their COTS-based devices and their impact on future programmable devices are analyzed.

Single event effects sensitivity measurements of advanced flash and first-in-first-out memories have been made. While many upsets are transients, other upsets initiated by high LET ions are semi-permanent.

An experiment on the Microelectronics and Photonics Test Bed (MPTB) was testing lield programmable gate arrays using spot shields to extend the life of some of the devices being tested. It was expected that the unshielded parts would fail from a total ionizing dose (TID) and yet the opposite occurred. The data show that the devices failing from the TID effects are those with the spot shields attached. This effort is to determine the mechanism by which the environment is interacting with the high-Z material to enhance the TID in these field programmable gate arrays.