We describe the results of single event effects testing conducted by the Boeing Radiation Effects Laboratory on a variety of devices. The data include SEU, SEL and SEFI cross sections induced by both heavy ions and protons.

We present a compendium of optocoupler radiation test data including data on neutron, proton and heavy ion displacement damage (DD), single event transients (SET) and degradation due to total ionizing dose (TID). Proton data includes ionizing and non-ionizing damage mechanisms.

This compendium of SEGR and SEB data organizes results from several laboratories comparing failure thresholds for several different manufacturers and technologies. The results of this compendium are aimed at the designer to show the possible variations between manufacturers and processes. The compendium incorporates previously published data with the most recent data obtained from various sources.

Energetic neutrons with an atmospheric neutron spectrum, which were demonstrated to induce single event burnout in power MOSFETs, have been Shown to induce burnout in high voltage (>3000V) electronics when operated at voltages as low as 50% of rated voltage. The laboratory failure rates correlate well with field failure rates measured in Europe.

This paper presents an update of the first 1994 compendium of single event test data for power MOSFETs. It provides failure thresholds from burnout or gate rupture for 61 devices of six manufacturers

Single event burnout was seen in power MOSFETs exposed to high energy neutrons. Devices with rated voltage greater than or equal to 400 volts exhibited burnout at substantially less than the rated voltage. Tests with high energy protons gave similar results. Burnout was also seen in limited tests with lower energy protons and neutrons. Correlations with heavy-ion data are discussed. Accelerator proton data gave favorable comparisons with burnout rates measured on the APEX spacecraft. Implications for burnout at lower altitudes are also discussed.

A variety of charge collection measurements by energetic protons and neutrons have been measured and compared. These include deposition in: small silicon junctions, large volume American and Russian silicon surface barrier detectors, and InGaAs photodiodes.

A new solar flare heavy ion model has been developed to support Space Station Single Event Effects (SEE) evaluations. It shows good agreement with previous flare data, and is implemented through an improved version of the CREME code.

Microelectronic devices used in avionics were tested in the WNR beam, simulating atmospheric neutrons. The SEU upset rates for ARINC 429 receivers agree with rates in memories, and neutron-induced latchup was measured in the LCA100 K and 200 K gate arrays and compared against a new neutron-induced latchup model.

RAMs, microcontrollers and surface barrier detectors were exposed to beams of high energy protons and neutrons to measure the induced number of upsets as well as energy deposition. The WNR facility at Los Alamos provided a neutron spectrum similar to that of the atmospheric neutrons. Its effect on devices was compared to that of protons with energies of 200, 400, 500 and 800 MeV. Measurements indicate that SEU cross sections for 400 MeV protons are similar to those induced by the atmospheric neutron spectrum.

This report presents the results of Single Event Effect (SEE) cham%htion testing of the Intel 87C5 1FC microcontroller for use in Space Station Freedom (SSF). The 87C51FC exhibited4 types of SEE: RAM upset and three types of system errors, i.e., reset, latchup, and power cycle (a condition not correctable by the onboard watchdog timer). ~emicrocontrollercrosssectionsandresponseratesfor these single event effects were determined.

Linear Energy Transfer (LET) distributions of Bevalac ion beams were measured. Subsequent analysis has called into question the standard assumption of a monoenergetic, single-species beam at Bevalac. Both high LET contaminants in the primary beam and very broad LET peaks in degraded beams were observed. High energy ion beams at other accelerators may possess similar characteristics. The existence of beam impurities may have important ramifications for the interpretation of single-event phenomena observed at high energy accelerator sites.

Neutron-induced single-event upsets were measured in static memory devices using a 10-curie PuBe source. The PuBe source conservatively overestimates the spectrum of fast neutrons emitted by a radioisotope thermoelectric generator (RTG). For the 93L422, the neutron-induced upset rate compared favorably with calculated values derived using the burst-generation concept. By accounting for the product...

This report presents the results of an experimental program to characterize single event upset phenomena in selected bipolar memory devices irradiated with relativistic heavy ions. The principle objective was to determine the multibit upset rate at normal and parallel beam incidence angles. The impetus for this objective is that multibit errors are not generally detectable by the simple Hamming codes currently used on spacecraft. Multibit errors significantly reduce spacecraft reliability in initiating spurious commands. It was found in this program that the multibit error cross section is equal to or greater than the projected area of the depletion regions for parallel and for normal to 60 degree incidence beams.

A new technique to nondestructively measure single event burnout cross sections for N-channel power MOSFETs is presented. Previous measurements of power MOSFET burnout susceptibility have been destructive and thus not conducive to providing statistically meaningful burnout probabilities. The nondestructive technique and data for various device types taken at several accelerators, including the LBL Bevalac, are documented. Several new phenomena are observed.

Current SEU testing and analysis techniques have as basic assumptions that the charge deposited at a junction depends linearly on the linear energy transfer (LET) of the ion and the pathlength of the ion through an imagined parallelepiped that represents the depletion region. This study tests these assumptions for two bipolar parts, AMD 27LSOO and Fairchild 93L422, by irradiating at fixed angles while varying the LET of two ion species. It was found that the 27LSOO shows a pronounced ion species dependence, and may show a deviation of deposited charge from the usual inverse-cosine times a fixed depletion depth, while the 93L422 exhibited the expected inverse-cosine dependence and no ion species dependence.

This paper presents the results of an investigation into the survivability of power MOSFETs in space. Seventy-two of these devices are presently in geosynchronous orbit on board six communications spacecraft, and operating at 70V which is 70% of the nominal breakdown voltage. No failures have occurred after 94536 device-days in space. The irradiation of discrete parts as well as the prototype flight power converter, containing the same part types, by iron particles with a LET of 10 MeV-cm2/mg, and an iron spectrum with a maximum LET of 26 showed these Hi-Rel ("S") flight parts to be relatively harder than the same type of devices previously ground tested. This appears to be the explanation for the lack of failures in space.