Under the Compound Semiconductor Materials on Silicon (COSMOS) DARPA program, Northrop Grumman Aerospace Systems (NGAS) has developed an advanced heterogeneous integration technology to intimately integrate compound semiconductor (CS) devices and circuits on CMOS/SiGeBiCMOS wafers. The integration approach is based on a direct face-to-face bonding between pre-fabricated InP chiplets and Si wafers. The heterogeneous integration process is compatible with any semiconductor technology. This integration enables significant improvement in dynamic range and bandwidth of high performance mixed signal circuits. In this paper we describe the integration approach and present two demonstration circuits.

Wideband digital-to-analog converters (DACs) are key to future high performance military electronic systems. This paper presents the results of an ultra wideband DAC based on advanced InP DHBT technology. The chip integrates a 40-to-10 bit digital multiplexer with a 10-bit DAC and associated clock generation.

This paper describes the development of analog-to-digital converters (ADCs) providing high dynamic range. The ADCs are high order low-pass and band-pass delta-sigma modulators with continuous-time low-pass and band-pass loop filters and are fabricated in an indium phosphide (InP) heterojunction bipolar (HBT) technology. Loop sampling frequencies range from 1 GHz to 2.5 GHz, with center frequencies ranging from DC to 100 MHz. Between 12 and 13.7 bits of resolution has been achieved for bandwidths of 25 MHz and 12.5 MHz, respectively.

This paper describes the development of analog-to-digital converters (ADCs) providing high dynamic range for multi carrier, multifunction communication applications. The ADCs are high order lowpass and bandpass delta-sigma modulators implemented in indium phosphide (InP) heterojunction bipolar (HBT) technology.