YMnO3 thin films were studied on Pt/Ti/SiO2/Si as a candidate for ferroelectric transistor random access memory (FeTRAM). The films were deposited by flash-evaporated metalorganic chemical vapor deposition (MOCVD) at low temperature and post annealed to crystallize the films to form a c-axis oriented hexagonal phase. Polarization versus electric field measurements on metal/ferroelectric/metal capacitors shows a remnant polarization of about 2 μC/cm2 and a coercive field of approximately10 kV/cm. Fatigue stress cycling shows no degradation of films up to 1011 cycles.