We present recent developments on the fabrication process of Buried Ridge Stripe (BRS) Laser Diodes (LDs) integrated with a butt-coupled passive Spot Size Converter (SSC). Hydrogenation of the buried passive section has been successfully implemented on a 2-inch wafer technology. Hydrogenated SSC-BRS LDs exhibit excellent high temperature CW performances. Improvement of external efficiency (0.24 and 0.16 W/A respectively measured at 85 degrees C on hydrogenated and as-grown 500 mu m-long SSC devices) confirms that hydrogenation significantly reduces the free carrier optical absorption losses. Moreover, its long-term stability is demonstrated through 2000 hrs Automatic Power Control test.