We present recent developments on the fabrication process of Buried Ridge Stripe (BRS) Laser Diodes (LDs) integrated with a butt-coupled passive Spot Size Converter (SSC). Hydrogenation of the buried passive section has been successfully implemented on a 2-inch wafer technology. Hydrogenated SSC-BRS LDs exhibit excellent high temperature CW performances. Improvement of external efficiency (0.24 and 0.16 W/A respectively measured at 85 degrees C on hydrogenated and as-grown 500 mu m-long SSC devices) confirms that hydrogenation significantly reduces the free carrier optical absorption losses. Moreover, its long-term stability is demonstrated through 2000 hrs Automatic Power Control test.

This paper reports on the static and dynamic performances of a 1.3 mu m Fabry-Perot uncooled plastic module with a standard A IT connector. An output power of 4 mW and an efficiency at fiber output of 0.07 mW/mA are reported at 85 degrees C. STM-1 long-hard and STM-4 short-hard transmission performances are demonstrated tip to +85 degrees C and in the presence of feedback.

This paper reports the first results on Fabry-Perot 1.3 mu m lasers with sub-micron tapered active layers defined using a UV-250 patterning technology in combination with conventional RIE processing of InP. Its implementation to the full 2 inch wafer process flow is of interest in low cost module fabrication. Short lasers (500 mu m) with low coupling loss (3.4 dB with end cleaved fiber) and high quantum efficiency (0.26 W/A at 85 degrees C) are demonstrated.

We present the characteristics of an uncooled plastic module for outdoor operation (+3 dBm at 85/spl deg/C). A transmission experiment is reported at 622 Mbit/s and up to 85/spl deg/C temperature. We describe the module design, then we discuss the performance of the optoelectronic (OE) chips. Finally, the static and dynamic performance of the intermediate sub-assembly and of the whole 1.3 /spl mu/m CW plastic module are reported.

We present the characteristics of an uncooled plastic module for outdoor operation (+3 dBm at 85 degrees C). Transmission experiment is reported at 622 Mbit/s crp to 85 degrees C temperature.

Summary form only given. This paper reports 1.3-/spl mu/m laser passively aligned with a cleaved single-mode fiber and encapsulated with silicone rubber on a Si substrate. Under 70-mA DC operation at 85/spl deg/C, a fiber power >2 mW is obtained for several assemblies. This result is thought to be the highest value reported so far for such type of device. It shows that these advanced technologies are promising for long-haul transmission.

We report a high output power (20 mW) integrated laser-modulator device, which allows 10-Gbit/s transmission with a negative alpha parameter over 76 km of standard fiber without any optical amplifier as a result of an average launched power of +3.6 dBm under modulation conditions.

In an Integrated Laser Modulator (ILM), residual optical feedback can lead to a significant level of frequency chirp compared to the case of a discrete external modulator. We have developed an original model of the ILM which has been successfully used in the design and optimisation of the ILM. It allows the calculation of static and dynamic properties of the ILM, aiming at a higher output power while keeping the amount of optical frequency chirp as low as possible. This has been obtained on a new ILM generation for which the output power has been multiplied by two by reducing the DFB coupling coefficient. System experiments at 10 Gb/s have demonstrated transmission distance over 76 km without any optical amplifier. The model shows that the chirp depends on the phase of the modulator and laser facets, in agreement with experimental results. Despite the random character of the phase, a low modulator facet reflectivity (/spl les/2/spl times/10/sup -4/) guarantees low feedback induced frequency chirp. Numerical simulation of the response (power and frequency chirp) to a 16-bit pseudo random bit NRZ sequence at 10 Gb/s has been performed.

High temperature operation at 1.3 mu m Fabry-Perot lasers with tapered active region is reported for silicone encapsulated chips. Burn-in tests demonstrate that the components are Fully compatible with non-sealed low-cost packaging.

To reduce packaging costs, it is necessary to use passive alignffment between the laser diodes and optical fiber, Such an alignment requires low-coupling loss and large positional alignment tolerances, This is achievable,vith integrated spot-size converters, which permit to match the near field of a laser to that of a Bat-end single-mode fiber (SMF), In this paper, we first review briefly the different technological approaches to realize spot-size converters. Then, we focus on the double-core structure developed both for 1.3-mu m Fabry-Perot lasers and 1.55-mu m semiconductor optical amplifiers (SOA's), The spot-size expansion is simulated using a two-dimensional (2-D) beam propagation method analysis. Short spot-size converters (100 mu m) integrated with 1.3-mu m lasers and 1.55-mu m SOA's exhibit beam divergences as low as 12 degrees x 12 degrees and 12 degrees x 15 degrees, respectively, The performances of devices with integrated spot-size converters are reported and discussed, A 2-in wafer process is used thanks to the versatility of the double-core structure and its compatibility with buried ridge stripe technology.

Feedback from the front facet of an integrated DFB laser with an electroabsorption modulator generates additional chirp to the single modulator. The reduction of the sensitivity to that feedback is in tradeoff relation with the external differential quantum efficiency and the single-mode yield. We introduce a figure-of-merit for the feedback sensitivity. It is obtained from the modeling of the small signal frequency modulation (FM). It indicates design rules for low-chirp and high-efficiency devices.

We experimentally show that laser and modulator facet phases with respect to the DFB laser grating are as important for the chirp as the modulator facet reflectivity given a 10 Gbit/s integrated laser-modulator source. We have presented a way to assess not only the modulator induced chirp but also the laser induced chirp of an integrated laser-modulator device. We have shown the influence of the modulator facet reflectivity and the major role of the facet phase versus the DFB laser grating on the chirp. We conclude that the facet reflectivity determines the 10 Gbit/s performance yield rather than individual chip behaviour.

We have investigated the regrowth of InP by gas source molecular beam epitaxy on patterned substrates with different V-grooved channels. The etching process has been adapted for deep V-grooves with narrow channels on (001) InP substrates. Three kinds of etch profiles which exhibit [lcub]111[rcub]B, [lcub]111[rcub]A and [lcub]112[rcub]A facets have been obtained. The regrown InP shows different planation effects depending on the facets of the V-groove. Planation effects are enhanced for B-type facets whereas the profile is left unchanged for A-type facets.