The Zintl phase CaSi2 commonly occurs in the 6R structure where puckered hexagon layers of Si atoms are stacked in an AA′BB′CC′ fashion. In this study we show that sintering of CaSi2 in a hydrogen atmosphere (30 bar) at temperatures between 200 and 700 °C transforms 6R-CaSi2 quantitatively into 3R-CaSi2. In the 3R polymorph (space group R-3m (no. 166), a=3.8284(1), c=15.8966(4), Z=3) puckered hexagon layers are stacked in an ABC fashion. The volume per formula unit is about 3% larger compared to 6R-CaSi2. First principles density functional calculations reveal that 6R and 3R-CaSi2 are energetically degenerate at zero Kelvin. With increasing temperature 6R-CaSi2 stabilizes over 3R because of its higher entropy. This suggests that 3R-CaSi2 should revert to 6R at elevated temperatures, which however is not observed up to 800 °C. 3R-CaSi2 may be stabilized by small amounts of incorporated hydrogen and/or defects.

The intermetallic compound ZnSb is an interesting thermoelectric material, largely due to its low lattice thermal conductivity. The origin of the low thermal conductivity has so far been speculative. Using multi-temperature single crystal X-ray diffraction (9 - 400 K) and powder X-ray diffraction (300 - 725 K) measurements we characterized the volume expansion and the evolution of structural properties with temperature and identify an increasingly anharmonic behavior of the Zn atoms. From a combination of Raman spectroscopy and first principles calculations of phonons we consolidate the presence of low-energy optic modes with wavenumbers below 60 cm-1. Heat capacity measurements between 2 and 400 K can be well described by a Debye-Einstein model containing one Debye and two Einstein contributions with temperatures {\Theta}D = 195K, {\Theta}E1 = 78 K and {\Theta}E2 = 277 K as well as a significant contribution due to anharmonicity above 150 K. The presence of a multitude of weakly dispersed low-energy optical modes (which couple with the acoustic, heat carrying phonons) combined with anharmonic thermal behavior provides an effective mechanism for low lattice thermal conductivity. The peculiar vibrational properties of ZnSb are attributed to its chemical bonding properties which are characterized by multicenter bonded structural entities. We argue that the proposed mechanism to explain the low lattice thermal conductivity of ZnSb might also control the thermoelectric properties of electron poor semiconductors, such as Zn4Sb3, CdSb, Cd4Sb3, Cd13-xInyZn10, and Zn5Sb4In2-x.

AbstractCaSi2 is prepared by arc melting the elements in the ratio Ca:Si = 1:2.02.

Structural changes of Li2C2 under pressure were studied by synchrotron x-ray diffraction in a diamond anvil cell under hydrostatic conditions and by using evolutionary search methodology for crystal structure prediction. We show that the high-pressure polymorph of Li2C2, which forms from the Immm ground-state structure (Z = 2) at around 15 GPa, adopts an orthorhombic Pnma structure with Z = 4. Acetylide C-2 dumbbells characteristic of Immm Li2C2 are retained in Pnma Li2C2. The structure of Pnma Li2C2 relates closely to the anticotunnite-type structure. C-2 dumbbell units are coordinated by nine Li atoms, as compared to eight in the antifluorite structure of Immm Li2C2. First-principles calculations predict a transition of Pnma Li2C2 at 32 GPa to a topologically identical phase with a higher Cmcm symmetry. The coordination of C-2 dumbbell units by Li atoms is increased to 11. The structure of Cmcm Li2C2 relates closely to the Ni-2 In-type structure. It is calculated that Cmcm Li2C2 becomes metallic at pressures above 40 GPa. In experiments, however, Pnma Li2C2 is susceptible to irreversible amorphization.

ZnAs was synthesized at 6 GPa and 1273 K utilizing multianvil high-pressure techniques and structurally characterized by single-crystal and powder X-ray diffraction (space group Pbca (No. 61), a = 5.6768(2) Å, b = 7.2796(2) Å, c = 7.5593(2) Å, Z = 8). The compound is isostructural to ZnSb (CdSb type) and displays multicenter bonded rhomboid rings Zn2As2, which are connected to each other by classical two-center, two-electron bonds. At ambient pressure ZnAs is metastable with respect to Zn3As2 and ZnAs2. When heating at a rate of 10 K/min decomposition takes place at ∼700 K. Diffuse reflectance measurements reveal a band gap of 0.9 eV. Electrical resistivity, thermopower, and thermal conductivity were measured in the temperature range of 2-400 K and compared to thermoelectric ZnSb. The room temperature values of the resistivity and thermopower are ∼1 Ω cm and +27 μV/K, respectively. These values are considerably higher and lower, respectively, compared to ZnSb. Above 150 K the thermal conductivity attains low values, around 2 W/m·K, which is similar to that of ZnSb. The heat capacity of ZnAs was measured between 2 and 300 K and partitioned into a Debye and two Einstein contributions with temperatures of θD = 234 K, θE1 = 95 K, and θE2 = 353 K. Heat capacity and thermal conductivity of ZnSb and ZnAs show very similar features, which possibly relates to their common electron-poor bonding properties.

The hydride Ba(3)Si(4)H(x) (x = 1-2) was prepared by sintering the Zintl phase Ba(3)Si(4), which contains Si(4)(6-) butterfly-shaped polyanions, in a hydrogen atmosphere at pressures of 10-20 bar and temperatures of around 300 °C. Initial structural analysis using powder neutron and X-ray diffraction data suggested that Ba(3)Si(4)H(x) adopts the Ba(3)Ge(4)C(2) type [space group I4/mcm (No. 140), a ≈ 8.44 Å, c ≈ 11.95 Å, Z = 8] where Ba atoms form a three-dimensional array of corner-condensed octahedra, which are centered by H atoms. Tetrahedron-shaped Si(4) polyanions complete a perovskite-like arrangement. Thus, hydride formation is accompanied by oxidation of the butterfly polyanion, but the model with the composition Ba(3)Si(4)H is not charge-balanced. First-principles computations revealed an alternative structural scenario for Ba(3)Si(4)H(x), which is based on filling pyramidal Ba5 interstices in Ba(3)Si(4). The limiting composition is x = 2 [space group P4(2)/mmm (No. 136), a ≈ 8.4066 Å, c ≈ 12.9186 Å, Z = 8], and for x > 1, Si atoms also adopt tetrahedron-shaped polyanions. Transmission electron microscopy investigations showed that Ba(3)Si(4)H(x) is heavily disordered in the c direction. Most plausible is to assume that Ba(3)Si(4)H(x) has a variable H content (x = 1-2) and corresponds to a random intergrowth of P- and I-type structure blocks. In either form, Ba(3)Si(4)H(x) is classified as an interstitial hydride. Polyanionic hydrides in which H is covalently attached to Si remain elusive.

AbstractZnAs is prepared by hot isostatic pressing of Zn and As (BN capsule, complex heating schedule up to 1273 K, 6 GPa).

The title compound is obtained from an equimolar mixture of LiB and Si under high pressure/high temperature conditions (10 GPa, 900 °C, 1 h, yield given in g).

Silicon swallows up boron: The novel open tetrahedral framework structure (OTF) of the Zintl phase LiBSi2 was made by applying high pressure to a mixture of LiB and elemental silicon. The compound represents a new topology in the B-Si net (called tum), which hosts Li atoms in the channels (see picture). LiBSi2 is the first example where B and Si atoms form an ordered common framework structure with B engaged exclusively in heteronuclear B-Si contacts.

AbstractSingle crystals of Li17Si4 are obtained from melts of the elements with 85—95 at.% Li and isolated by isothermal centrifugation.

Single crystals of Li17Si4 were synthesized from melts LixSi100-x (x > 85) at various temperatures and isolated by isothermal centrifugation. Li17Si4 crystallizes in the space group F (4) over bar 3m (a = 18.7259(1) angstrom, Z = 20). The highly air and moisture sensitive compound is isotypic with Li17Si4. represents a new compound and thus the lithium-richest phase in the binary system Li-Si superseding known Li21Si5 (Li16.8Si4). As previously shown Li22Si5 (Li17.6Si4) has been determined incorrectly. The findings are supported by theoretical calculations of the electronic structure, total energies, and structural optimizations using first-principles methods. Results from melt equilibration experiments and differential scanning calorimetry investigations suggest that Li17Si4 decomposes peritectically at 481 +/- 2 degrees C to "Li4Si" and melt. In addition a detailed investigation of the Li-Si phase system at the Li rich side by thermal analysis using differential scanning calorimetry is given.

We studied the binary carbide systems Li2C2 and CaC2 at high pressure using an evolutionary and ab initio random structure search methodology for crystal structure prediction. At ambient pressure Li2C2 and CaC2 represent salt-like acetylides consisting of C2(2-) dumbbell anions. The systems develop into semimetals (P3m1-Li2C2) and metals (Cmcm-Li2C2, Cmcm-CaC2, and Immm-CaC2) with polymeric anions (chains, layers, strands) at moderate pressures (below 20 GPa). Cmcm-CaC2 is energetically closely competing with the ground state structure. Polyanionic forms of carbon stabilized by electrostatic interactions with surrounding cations add a new feature to carbon chemistry. Semimetallic P3m1-Li2C2 displays an electronic structure close to that of graphene. The π* band, however, is hybridized with Li-sp states and changed into a bonding valence band. Metallic forms are predicted to be superconductors. Calculated critical temperatures may exceed 10 K for equilibrium volume structures.

At elevated pressures (above 1.5 GPa) dihydrogen bonded ammonia borane, BH3NH3, undergoes a solid-solid phase transition with increasing temperature. The high pressure, high temperature (HPHT) phase precedes decomposition and evolves from the known high pressure, low temperature form with space group symmetry Cmc21 (Z = 4). Structural changes of BH3NH3 with temperature were studied at around 6 GPa in a diamond anvil cell by synchrotron powder diffraction. At this pressure the Cmc21 phase transforms into the HPHT phase at around 140 °C. The crystal system, unit cell, and B and N atom position parameters of the HPHT phase were extracted from diffraction data, and a hydrogen ordered model with space group symmetry Pnma (Z = 4) subsequently established from density functional calculations. However, there is strong experimental evidence that HPHT-BH3NH3 is a hydrogen disordered rotator phase. A reverse transition to the Cmc21 phase is not observed. When releasing pressure at room temperature to below 1.5 GPa the ambient pressure (hydrogen disordered) I4mm phase of BH3NH3 is obtained.

AbstractThermodynamically stable solids M2SiH6 (M: K, Rb) are prepared from mixtures of MH and Si, or MSi using ammonia borane as hydrogen source (NaCl capsule, 4—9 GPa, 400—700 °C, 1 h).

The effects of high pressure (up to 30 GPa) on the structural properties of lithium and calcium carbide, Li(2)C(2) and CaC(2), were studied at room temperature by Raman spectroscopy in a diamond anvil cell. Both carbides consist of C(2) dumbbells which are coordinated by metal atoms. At standard pressure and temperature two forms of CaC(2) co-exist. Monoclinic CaC(2)-II is not stable at pressures above 2 GPa and tetragonal CaC(2)-I possibly undergoes a minor structural change between 10 and 12 GPa. Orthorhombic Li(2)C(2) transforms to a new structure type at around 15 GPa. At pressures above 18 GPa (CaC(2)) and 25 GPa (Li(2)C(2)) Raman spectra become featureless, and remain featureless upon decompression which suggests an irreversible amorphization of the acetylide carbides. First principles calculations were used to analyze the pressure dependence of Raman mode frequencies and structural stability of Li(2)C(2) and CaC(2). A structure model for the high pressure phase of Li(2)C(2) was searched by applying an evolutionary algorithm.

High-pressure conditions afford unique all-hydrido hypervalent complexes [SiH6]2− in the crystalline hydridosilicates A2SiH6 (A=K, Rb). Compared to normal-valent silanes the SiH bond appears considerably enlarged, by about 0.15 Å. Accordingly, SiH stretching frequencies are drastically reduced, by about 400–500 cm−1, thus reflecting the weakness of a hypervalent SiH bond. Detailed facts of importance to specialist readers are published as "Supporting Information". Such documents are peer-reviewed, but not copy-edited or typeset. They are made available as submitted by the authors. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.

The binary compounds ZnSb and ZnAs with the CdSb structure are semiconductors (II-V), although the average electron concentration (3.5 per atom) is lower than that of the tetrahedrally bonded III-V and II-VI archetype systems (four per atom). We report a detailed electronic structure and chemical bonding analysis for ZnSb and ZnAs based on first-principles calculations. ZnSb and ZnAs are compared to the zinc blende-type semiconductors GaSb, ZnTe, GaAs, and ZnSe, as well as the more ionic, hypothetical, II-V systems MgSb and MgAs. We establish a clearly covalent bonding scenario for ZnSb and ZnAs where multicenter bonded structural entities (rhomboid rings Zn2Sb2 and Zn2As2) are connected to each other by classical two-center, two-electron bonds. This bonding scenario is only compatible with a weak ionicity in II-V semiconductor systems, and weak ionicity appears as a necessary condition for the stability of the CdSb structure type. It is argued that a chemical bonding scenario with mixed multicenter and two-center bonding resembles that of boron and boron-rich compounds and is typical of electron-poor sp-bonded semiconductors with average valence electron concentrations below four per atom.