The organic field-effect transistor exhibits specific characteristics, including channel thickness, ON-current, OFF-current, subthreshold swing, threshold voltage, and turn-on voltage. These characteristics are influenced by the fabrication process. Designing and understanding OFET-based circuits requires knowledge of these parameters. Using the Silvaco TCAD tool, an OFET with palladium source/drain electrodes, NdTaNO dielectric material, a pentacene active layer, and an aluminum gate electrode was simulated. The device’s performance parameters, such as drain current, threshold voltage, and subthreshold slope, were analyzed for channel thicknesses ranging from 10 to 100 nm. Overall improvement in Ion and Vth was observed with decreasing channel thickness (tch). Fabrication-related issues like dewetting, tensile strain, and compressive stress in organic semiconductor films, which are related to device channel thickness, were considered to enhance OFET lifetime. These issues arise when the OSC thickness is very small or very large, decreasing device lifetime and circuit performance. Optimal device conditions and satisfactory operational behavior were achieved at thicknesses of 50 and 60 nm. These values represent the optimal tch requirements for OFET fabrication.

A numerical study is performed using the SCAPS-1D device simulator to analyse the function of Mn(1−X) ZnXOδ for x = 0.02–0.10 as a buffer layer in a CZTS thin-film photovoltaics. The analysis of the proposed structure aims how Mn concentration affects carrier transport, interfacial recombination and photovoltaics performance. Controlled Mn incorporation optimizes band alignment at the buffer/absorber interface, enhancing charge extraction and reducing recombination. The device exhibits utmost power conversion efficiency of 22.24

The efficiency of solar cells mainly depends on the parameters durability, low cost, environment friendly, highly efficient etc. The recent studies on kesterite CZTSSe solar cells leading to major problem of low open-circuit voltage (Voc) which reduces the efficiency. This paper mainly focusses to boost the efficiency of CZTSSe solar cells by raising the open-circuit voltage (Voc) and by reducing the losses caused by high temperature. These hurdles can be overcome by implementing a Back surface field (BSF) layer composed of BaSi2 which uses of the SCAPS-1D software to conduct a numerical analysis of the CZTSSe solar cells. The model validity can be achieved by using published experimental and simulation data. The efficiency can be enhanced by using BaSi2 as a BSF layer by raising it from 12.54 to 16.59

Gallium nitride high-electron-mobility transistors (GaN HEMTs) have emerged as a prominent technology in advanced electronic systems. This review provides a concise overview of GaN HEMTs, including low-damage fabrication technologies, different HEMT device architectures, associated challenges, and major application areas. GaN HEMTs are semiconductor devices that employ gallium nitride as the active channel material, enabling operation at higher frequencies, voltages, and power levels than conventional silicon-based transistors. The distinctive material properties of GaN, including its wide bandgap, high electron mobility, and high breakdown voltage, contribute to the superior performance of GaN HEMTs. GaN HEMTs represent a transformative technology with broad applications in telecommunications, radar systems, wireless communication, and power electronics. Their exceptional electrical and thermal characteristics make them critical for the development of high-efficiency and high-performance electronic systems. Consequently, GaN HEMTs continue to drive technological advancements across multiple industries, supporting the next generation of compact, energy-efficient, and high-frequency electronic devices.

Two-dimensional transition metal dichalcogenide (TMDC) materials such as WSe2 and MoS2 are promising channel materials for field-effect transistor (FET) biosensors due to their atomic thickness, strong electrostatic control, and high surface sensitivity. In this work, a device-level analysis of a double-gated TMDC-based FET biosensor with hetero-dielectric gate engineering is presented. The proposed structure employs WSe2 and MoS2 as channel materials and Hf O2 as the primary gate dielectric, while additional dielectric layers with different dielectric constants are introduced in the sensing region to create a hetero-dielectric configuration. Numerical simulations are performed to analyze dielectric modulation representing different biomolecular environments. The effect of dielectric constant variation on drain current, threshold voltage, and ION/IOFF ratio is investigated. Results show that increasing the dielectric constant enhances gate capacitance and electrostatic control, improving current modulation and sensing performance. Comparative analysis indicates that hetero-dielectric double-gated structures enhance device sensitivity for low-power nanoscale biosensor applications.

Biosensors have emerged as potential contenders and alternatives for the replacement of classical laboratory-based disease diagnosis systems. The superior characteristics of the biosensors, like compact size, high speed, low cost, and user-friendly operation, created new trends in medical diagnosis by opening the gates for point-of-care testing(POCT). These POCT tools can perform the diagnosis at the patient's location by eliminating the conventional, laboratory-based diagnosis. Time is effectively saved with the POCT tool to diagnose the disease, and this means time can be effectively utilized for medication to save the patient. Especially in the case of chronic diseases like cancer, it is essential to diagnose the disease at the earlier stages to save the person. The label-free detection of target analytes using the dielectric modulation technique and an FET-based device created an impact change, and the Tunnel FET-based device took this biosensor to the next level. This review article presents the performance investigation of TFET-based biosensors as POCT testing tools for the diagnosis of various cancer diseases, right from the first reported device to the current architecture. The TFET device is able to produce faster results by detecting a low concentration of the target sample and eliminating the limitation on the subthreshold swing of conventional FET-based biosensors. The unique BTBT of charge carriers in TFET devices eliminates the performance impediments faced by conventional FET biosensors in terms of short-channel effects. A detailed, systematic, analytical review is presented, involving the extraction of cancer cells in the diagnosis of various cancer diseases. This work will present numerous reports on TFET-based biosensors for cancer detection at a single point, and this will provide insight and a detailed understanding of technological advancements in the design of sophisticated next-generation biosensors for future researchers.

Breast Cancer has emerged as a prominent cause of cancer-related mortality in recent years, and it is now one of the most commonly diagnosed type of carcinoma. Breast Cancer identification at an early stage has the potential to drastically cut mortality rates by allowing for sophisticated medical therapies. The Dual Material Gate InSb/Si (Indium antimonide/silicon) Heterojunction Silicon on Insulator Tunnel Field Effect Transistor (DMG-HJ-SOI-TFET) device, specifically built for the label free identification of breast cancer cells (BCC), is comprehensively examined in this study. Dielectric modulation is used for label free detection of BCC by utilising their distinct dielectric constant values (K). The DMG-HJ-SOI-TFET device's heterojunction architecture improves both stability and sensitivity by allowing charge carriers to flow across different energy bands. The device employs an InSb/Si heterojunction with an N + pocket at the drain-channel junction. The nanocavity is formed between the gate electrode and the channel region, towards the drain side. InSb is utilised as a source material to increase the ON current. The simulation analysis exhibits high sensitivity, particularly for T47D breast cancer cells, with a dielectric constant K = 32, a subthreshold voltage of 39 mV/dec, and an on-current sensitivity SIon​of 104 was achieved. The key advantages of the proposed structure are its great flexibility, portability, minimal power consumption, and sensitivity, opening up new opportunities for the development of highly sensitive biosensors. The device exhibits excellent control over the channel and reduces leakage current. The biomolecule sensing mechanism relies on ambipolar current, which depends on the dielectric constant of the nanocavity. Increased dielectric constant leads to improved sensitivity of the device. This biosensor exhibit enhanced sensitivity for biomolecule detection at low operating voltages, leading to significant improvements in both sensitivity and selectivity. Its ability to provide precise sensitivity assessments makes it a promising candidate for point-of-care breast cancer diagnostics.

The selection of the electron transport layer (ETL) and hole transport layer (HTL) has a significant impact on the performance of CIGS (Copper Indium Gallium Selenide) solar cells. In this work, we use SCAPS-1D simulation to examine how different ETL and HTL materials affect the stability and efficiency of solar cells based on CIGS. Because of its wide bandgap, high electron mobility, and superior thermal and chemical stability, BaSnO3 emerges as a promising alternative to the conventional designs that usually use CdS and ZnO as ETL materials. Utilising its exceptional optoelectronic characteristics, high hole mobility, and chemical robustness, CsPbI3 is presented for the HTL. BaSnO3 and CsPbI3 combine to create a novel device architecture that improves photovoltaic performance and environmental compatibility. Notable power conversion efficiency of 16.41 %, opencircuit voltage of 1.1244 V, short-circuit current density of 19.76 mA/cm2, and fill factor of 73.86 % are all displayed by the simulated solar cell. These findings demonstrate how crucial careful material selection and device architecture optimisation are to improving thin-film photovoltaic technologies' stability and efficiency. The suggested structure offers a convincing route to sustainable, next-generation solar energy solutions.

This work introduces a biosensor using a dielectric modulated inverted C-shaped junction tunnel field-effect transistor (DM-ICJ-TFET) to early diagnosis of breast cancer disease. It exploits the unique electrical properties of this TFET for sensitive detection of both tumorigenic and non-tumorigenic cells. Featuring an inverted C-shaped tunnel junction with overlapped source pocket, and nanocavities, the biosensor shows enhanced detection sensitivity of TFET based biosensor with high precision. Analysis of electrostatic properties and dielectric constant variation of breast cancerous cell lines elucidates the detection mechanism. Evaluation of sensitivity parameters highlights the effectiveness of the biosensor, especially with optimized cavity structures. This biosensor offers promise for array-based breast cancer screening, with advantages including simplified transduction, cost-effectiveness, and compatibility with CMOS processes, contributing to improved patient outcomes in oncology.

The integration of physics-based modelling and artificial intelligence (AI) is transforming semiconductor device simulation, facilitating unparalleled precision, efficiency, and predictive power. Conventional semiconductor modelling is based on first-principles physics, including drift-diffusion equations, Boltzmann transport models, and quantum mechanical methods. Nonetheless, these methods frequently encounter computational constraints when tackling intricate nanoscale processes. Novel AI-driven approaches, including as deep learning, physics-informed neural networks (PINNs), and alternative modelling, provide innovative ways to address these difficulties. The article explores recent progress in the integration of AI with semiconductor device physics, highlighting hybrid methodologies that preserve physical interpretability while utilising data-driven insights. In response to these improvements, machine learning-assisted compact modelling (MLCM) has garnered considerable attention as an alternative to conventional white-box modelling. These opaque methodologies seek to deliver versatile modelling for intricate mathematical and physical events through the training of neural networks using empirical and simulated data. This facilitates the creation of a precise closed-form correlation between output attributes and input parameters associated with the fabrication process and device functionality. Primary applications encompass swift process optimisation, concise model formulation, and inverse design for advanced electronics. It addresses the benefits and constraints of AI-based modelling, emphasising prospective approaches for combining physics-driven and data-driven paradigms. This interdisciplinary synthesis aims to expedite semiconductor research and development, promoting more efficient and scalable device design methodologies.

The organic field-effect transistor exhibits specific characteristics, including channel thickness, ON-current, OFF-current, subthreshold swing, threshold voltage, and turn-on voltage. These characteristics are influenced by the fabrication process. Designing and understanding OFT-based circuits requires knowledge of these parameters. Using the Silvaco TCAD tool, an OFET with palladium source/drain electrodes, NdTaNO dielectric material, a pentacene active layer, and an aluminum gate electrode was simulated. The device's performance parameters, such as drain current, threshold voltage, and subthreshold slope, were analyzed for channel thicknesses ranging from 10 to 100 nm. Overall improvement in Ion and Vth was observed with decreasing channel thickness (tch). Fabrication-related issues like de-wetting, tensile strain, and compressive stress in organic semiconductor films, which are related to device channel thickness, were considered to enhance OFET lifetime. These issues arise when the OSC thickness is very small or very large, decreasing device lifetime and circuit performance. Optimal device conditions and satisfactory operational behavior were achieved at thicknesses of 50 nm and 60 nm. These values represent the optimal tch requirements for OFET fabrication.

The efficiency of solar cells is strongly influenced by factors such as durability, cost-effectiveness, environmental compatibility, and overall performance. Recent advancements in kesterite-based CZTSSe solar cells have revealed a persistent challenge of low open-circuit voltage (VOC), which significantly limits device efficiency. This work focuses on optimizing absorber and interface properties to enhance the simulated performance of CZTSSe solar cells. The thermal stability of the proposed structure is also evaluated by examining the effect of operating temperature on key photovoltaic parameters. To address performance limitations, a BaSi₂-based back surface field (BSF) layer is incorporated, and numerical simulations are carried out using the SCAPS-1D software. The introduction of the BaSi₂-based BSF layer effectively reduces VOC-related losses and enhances the overall device efficiency. The model's validity is supported through comparison with previously published experimental and simulation data. Incorporating BaSi₂ as the BSF layer increases the simulated efficiency from 12.54% to 16.37%. In parallel, a systematic study of the CZTSSe absorber layer was conducted to determine the optimal thickness and doping concentration for further improving solar cell performance. The values can be varied systematically, such as the absorber's layer thickness from 0.5 to 3 μm, and the doping concentration is modified from 1012 to 1018 cm- 3. An efficiency of 19.61% can be achieved for the recently improved configuration using a CZTSSe thickness of just only 0.5 μm under idealized conditions but not experimentally realistic. This reduction of the thickness of the CZTSSe solar cells is an important factor in the decline of performance, but it can improve the lifetime of minority carriers.

The current research reports about the electrical detection of the breast cancer bit line cells by immobilizing them into our proposed device which is a Junction Less Ga2O3 FinFET based biosensor with 14 nm gate length. Our proposed device has two nanocavity regions within the oxide region underneath the gate metal for gaining the higher sensitivity value. We have even performed the analysis electrostatically for the extraction of Energy band diagram, Electric field, potential across the channel region horizontally including drain current terms. We can detect the variation in the sensitivity of the device by varying the dielectric constant value of cancer bit line cell respectively. We have even analyzed sensitivity in terms of Drain current (Id), Switching ratio (Ion/Ioff), threshold voltage (Vth) and gm(transconductance). The drain current and switching ratio sensitivity has been extracted even in terms of fill factor and its impact on the device has been recorded by considering MCF7 whose dielectric constant is 27.5. Finally, it has been observed that all the electrical parameters and the sensitivity is recorded to be high for T47D which has the highest dielectric constant value among all the considered breast cancer bit cell lines.

The proposed research paper focuses on the study of fully depleted silicon (Si)‐on‐insulator negative capacitance metal oxide‐semiconductor field‐effect transistor (FDSOI‐NC‐MOSFET) performance for biosensor and digital circuit applications. The study mainly aims to use ferroelectric (FE) material to improve the performance and efficiency of FDSOI‐NC‐MOSFETs compared to conventional planar MOSFETs. Using TCAD software, the proposed device is simulated and analyzed under various parameter conditions (parameters like temperature, channel thickness, input supply voltages, and channel doping levels). Later, the proposed device is also designed for different biomolecular structures to analyze the selectivity and sensitivity behavior of the device. Sensitivity is the change in electrical characteristics in response to applied external stimuli or parameters like current and voltages. Variations in these parameters will affect the operating region of the device, thereby, the choice of parameters in achieving the best performance will depend on the operating conditions and device applications. NC‐MOSFET with FE materials can obtain an acceptable on/off current ratio by lowering the off current and can achieve an adequate subthreshold swing (SS), thus, observed that the NC‐MOSFET device has enhanced performance and transfer characteristics in comparison to planar MOSFET. For K = 4, at an input voltage of 0.25 V, the I on / I off ratio was 6.21 × 10 5 and the sensitivity was 6.20 × 10 7 and at 0.5 V, these values rise to 8.07 × 10 5 and 8.073 × 10 7 , respectively. Similarly for K = 6 and at an input voltage of 0.25 V, we observed an I on / I off ratio is 1.5 × 10 7 and a sensitivity of 1.52 × 10 9 . When the input voltage was increased to 0.5 V, the I on / I off ratio improved to 2.07 × 10 7 and the sensitivity increased to 2.073 × 10 9 . From these analyses, it is apparent that as the K ‐values increase at a given input voltage, both the I on / I off ratio and the sensitivity also increase significantly. Finally, in this paper, we also demonstrated the implementation and simulation of digital logic gates using the proposed NC‐MOSFET device, supporting circuit‐level design applications.

This study explores the potential design alternatives for cells by examining the dimensions and tapering of grid elements. The broadband solar cell absorber configurations design is studied with front/rear surface plasmon resonance through the employment of dimensions and tapering of single/tabbed solar cell grid elements. The analysis includes the grid structure, contact points, total series resistance, and estimated costs associated with cells, specifically comparing square-shaped cells against varying heights of N busbars or fingers within the cell grid. This comparison is based on different cross-sectional profiles of busbars or fingers in a single cell measurement configuration. Additionally, the research elucidates the grid structure, contact points, total series resistance, estimated costs, and front metal coverage for various cell shape configurations, again considering the cell grid with different busbar or finger cross-sectional profiles at a height of 30 μm. Furthermore, the study measures and clarifies the contact points, grid structure, total series resistance, and estimated costs for rectangular-shaped cells in relation to the height of N busbars or fingers, utilizing a rectangular cross-sectional profile for a single cell or tabbed cell measurement setup, with ribbons set at a height of 200 μm for the tabbed cell.

Colloidal quantum dots (CQD) are emerging third-generation photovoltaic technologies because of their ability to link a wider range of the light spectrum compared to those of perovskite, crystalline, and copper indium gallium selenide (CIGS) solar cells. In this work, a Lead Sulphide (PbS) CQD solar cell architecture with Ag2S, CdS, ZnSe and ZnS buffer layer is presented. The device consisting of PbS-tetrabutyle ammonium iodide (PbS-TBAI) as an absorber layer, PbS-1,2-ethanedithiol (PbS-EDT) as a hole transport layer (HTL), TiO2 as an electron transport layer (ETL), and fluorine tin oxide (FTO) as an oxide layer. The electrical performances of the solar cells were simulated using SCAPS-1D while taking into account different buffer layers with increasing bandgap values. With ZnS acting as a buffer layer, the computational modelling and analysis of architectural PbS CQD solar cell result in an efficiency of 17.12%. Additionally, the parameters of the solar cell have been studied to be affected by the thickness and bandgap of the absorber and HTL layers, the effect of acceptor concentration with various buffer layers, the impact of temperature, the effect of HTL doping density, and the effect of absorber layer defect density. This study can serve as a guide for future PbS CQD solar cells.

The Tunnel Field Effect Transistor (TFET) device has emerged as the potential candidate to replace the Field Effect Transistor (FET)--based biosensor for the label-free detection of biomolecules using the dielectric modulation (DM) technique. The superior subthreshold swing characteristics with the unique band-to-band tunneling (BTBT) of charge carriers, the TFET-based biosensor can accomplish features of Point of Care Testing (PoCT) tools. Researchers proposed various techniques to enhance the performance of TFET-based biosensors in terms of high ON(ION) current sensitivity, which is treated as the performance stumbling block for TFET devices. In this review, a systematic investigation of the low bandgap material engineering technique applied to the TFET-based biosensors is carried out to understand the functionality and work. The heterojunction-based TFET biosensors with SiGe, Ge, and GaAs material are investigated thoroughly. The hetero material-based junction less TFET biosensors are also included in this review to exhibit the advantage of the material engineering approach for JLTFET biosensors. The bandgap engineering technique for the heterojunction TFET biosensor is investigated by considering other performance approaches like structural engineering, Gate work function, and source engineering. The performance of these heterojunction TFET biosensors was studied by taking the parameters like energy bandgap, on current, drain current sensitivity and subthreshold swing of the device. In this work, a detailed roadmap is created to understand how the low bandgap material engineering can be applied to the TFET biosensor to enhance its performance in terms of sensitivity and speed of detection.

Due to its versatility, metal oxide semiconductor field effect transistor (MOSFET) based devices are seeing tremendous growth in demand. To meet the demands of high speed and low power consumption, these MOS devices are continually scaling down to produce next-generation hardware. But the shot channel effects and the limitation in the minimum subthreshold swing (SS>60 mV/Dec), stop the further scaling of the MOSFET device. The Tunnel FET(TFET) is considered as a suitable potential replacement for the MOSFET due to its unique band-to-band tunneling (BTBT) charge carrier transport and superior subthreshold characteristics (SS<60 mV/Dec). The TFET device effectively eliminates the SCE and allows the fine scaling of the device required by the industry. However, the TFET suffers from low ON(ION) current and ambipolar conduction, which makes the performance hectic for the TFET device. So, researchers proposed various methods to overcome these challenges, and gate structural engineering (GSE) and gate work function engineering (GWE) are the most recommended and yield good results for TFET. In this review paper, we have performed a comparative investigation on different devices reported on these two techniques by taking various parameters of the TFET. A detailed analysis is carried out to reveal how these techniques enhance the on (Ion) current and suppress the ambipolar current of the device. Especially the impact of the change in gate structure and gate metal work function on the tunneling width of the device focused by considering the device's electrostatic. A comparative study of different TFET architectures with different electrical parameters is reported.

In this paper, the MoTe 2 based FET transistor has been designed and simulated with MoTe 2 as a channel material, and compared its performance with other 2D materials as channel materials. Molybdenum ditelluride (MoTe 2 ) is one of the material belonging to the TMDC (Transition metal dichalcogenides) family used in many electronic and optoelectronics applications due to its tunable band-gap and its high stability nature. The MoTe 2 based FET transistor was simulated in different structural styles for its input and output characteristics using the TCAD simulation tool. Initially, a generalized structure of the FET transistor with MoTe 2 as a channel material was simulated, later MoTe 2 based hetero-dielectric FET transistor (adding with high-K dielectric materials along with HfO2 material) is also simulated. It is observed from the analyses that hetero-dielectric structures will have high conductivity compared to conventional MoTe 2 based FET transistors. The performance of the MoTe 2 based FET was also compared to that of other 2D materials, such as MoS 2 and WSe 2 , by employing them as channel materials. It is observed from simulation that, the Ion/Ioff current ratio of MoS 2 ,WSe 2 and MoTe 2 as 2.25e9, 8.11e8 and 4.93e7. Based on these results and material properties, it is understood these materials can be employed for a variety of purposes due to their distinct features. For example, the direct bandgap and increased electron mobility of MoS 2 material make it suited for optoelectronic applications and high-speed electrical devices. MoTe 2 materials with variable bandgap and anisotropic conductivity, on the other hand, are appealing for flexible electronics, wearable devices, and devices needing directional charge transport. As a result of their great compatibility, researchers can investigate hybrid structures and heterostructures to affect the collaborative effects of combining these different 2D materials, leading to innovative functions and improved device performance. Lastly, the proposed heterodielectric device was designed for dry protein dielectric biomolecules as dielectric material to analyze the device’s sensitivity performance. It is observed that Variations in dielectric constant affect the sensitivity of biosensor devices at different channel lengths.

In this paper, a SiGe pocket n-TFET is designed and its electrical performance is extracted using a TCAD simulator. Initially, a comparative study of input characteristics among conventional TFET (Device 1), intrinsic SiGe pocket TFET (Device 2), and doped SiGe pocket TFET (Device 3) is presented. It is seen that Device 2 shows an improved switching ratio (ION/IOFF) compared to other Devices. Furthermore, the RF/analog performance such as transconductance (gm), output conductance (gd), intrinsic gain (gm/gd), gate capacitance (Cgg), cut-off frequency (fc), transconductance frequency product (TFP), gain frequency product (GFP), and gain transconductance frequency product (GTFP) is reported for the variation in x of SiGe pocket from 0 to 1. The eBTBT rate and electron density are plotted for the variation in x of SiGe pocket Vertical TFET. The results reveal that the increase in x leads to an improvement in RF/analog performance and the tunneling rate in SiGe pocket Vertical TFET.