Applicability of effective LET concept to SEE testing of modern CMOS devices was investigated. Heavy ion irradiations of four CMOS ICs were performed for a wide range of LET values and angles of incidence.

SEL was observed along with SEFI in Kintex-7 under focused laser irradiation.

Experimental results are presented for different CMOS ICs, evidencing latent damage induced by single event latch-up. Additive and non-additive destructive effects are analyzed.