A key aspect of the safe operation of computing systems in environments with exposure to ionizing particles (such as ions, protons, and neutrons) is single-event effects (SEE) hardness assurance. Statistically reliable determination of the probability of failure-free operation of integrated circuits (ICs) based on radiation testing results poses several fundamental challenges. In the absence of observed failures during testing, it becomes nearly impossible to interpret the results conclusively without utilizing prior knowledge about the device and the nature of SEEs. Prior quantitative information about SEE behaviour of the devices of the same type can be used to justifiably reduce test requirements while the desired confidence level in the hardness assessment. This paper proposes a method for determining testing requirements based on Bayesian methodology. In this approach, SEE sensitivity parameters are treated as a random vector variable, and the prior probability distribution for this variable is constructed from available empirical data. Both parametric and non-parametric methods for constructing the prior distribution from empirical data are considered. The analysis reveals that the uncertainty in testing requirements estimation is predominantly influenced by the prior information and its representation, while accounting for sample-to-sample variability and particle fluence measurement errors only slightly increases test requirements. The proposed approach was also used for assessing the confidence level of hardness requirements compliance check based on prior information without conducting actual tests.

The paper analyzes the features of the experimental evaluation of the single event effects (SEE) cross section dependence on linear energy transfer (LET) for ions with energies above 100 MeV/nucleon. Ion energy degraders use in order to change the values of the LET. The paper presents calculations of LET spectrum at different thicknesses of a polycarbonate degrader for iron ions with energies of 100...450 MeV/nucleon as an example. It is proposed to evaluate the LET values in packaged electronic devices with an unknown physical and chemical composition with help of the modified technique used at the ion accelerator at Brookhaven National Laboratory in the USA. An additional technique with preliminary studies on X-ray of packaged electronic is proposed to estimate the mass thickness of the protective layers in integrated circuit. In order to reduce the influence of infamous factors, it is proposed to thin the package based on the results of the analysis of X-ray images. The proposed approach makes it possible to correctly determine the dependence of the SEE cross sections on the LET of both packaged and decapsulated integrated circuits for SEE under high-energy ions. The obtained results are supposed to be used at the specialized ISKRA station, which is part of the NICA nuclotron complex at JINR, Dubna. The presented results make it possible to assess the upset and failure hardness of electronic information systems to the effects of ions of artificial and natural origin.

A model is proposed to explain the low-dose-rate effects when exposed to ionizing radiation in bipolar structures, taking into account the effects of the subthreshold defect formation in highly doped silicon layers. Variants for the degradation of the base current in a bipolar transistor are considered, taking into account the simultaneous action of surface radiation and displacement effects in the near-surface base region. The conditions for the enhanced low-dose-rate sensitivity (ELDRS) in bipolar structures are shown. The presented results of the analysis allow us to explain most of the observed experimental results.

The paper analyzes the features of the experimental evaluation of the cross sections of single event effects (SEE) under the influence of pulsed ion beams. The main reasons that can distort the results of the experiment are multiple ion exposures to the same sensitive area, several single event effects in different elements of integrated circuit (IC) in one exposure pulse, simultaneous effects of dose rate and ionization reaction from a single nuclear particle. All these effects are analyzed and it is shown that when exposed to an ion pulse with dose rate of less than 106 rad(Si)/s, the effects of dose rate have little effect on the sensitivity of IC to SEE. There may be difficulties when we register single event transient (SET), but due to different reaction parameters, it is possible to separate the effects of dose rate and SET. The effect of ion range on the maximum flux is estimated. It is shown that taking into account the ions range makes it possible to increase the permissible flux several times.

The NICA accelerator complex includes beam transfer lines and stations for applied research. The first commissioning of the Station of Chip Irradiation (SOCHI) was performed at the end of 2021with С4+ heavy ions extracted from the linear accelerator (HILAC) at an energy of 3.2 MeV/n. The new SOCHI beam transfer line is integrated in the existing HILAC-Booster beamline. The Irradiation Setup for Components of Radioelectronic Apparatus (ISCRA) with ion energy ranging from 150 to 500 MeV/n and the Setup for Investigation of Medical Biological Objects (SIMBO) with the ion energy ranging from 400 to1100 MeV/n are based on the beams extracted from Nuclotron. The equipment of ISCRA and SIMBO stations has been manufactured and is planned to mount in the end of 2022. The beamlines are being designed now. The technical parameters of the beamlines and stations and the results of the first run of the SOCHI station are presented in this study.

The research results of single event displacement effects in VLSI elements under the effect of neutron radiation are presented. The nonionizing energy losses in a sensitive microvolume of a VLSI element for the interaction of neutrons with silicon atoms are estimated. The influence of individual disordered regions and clusters of radiation defects on the performance of VLSIs are determined. The possibilities of fast annealing effects and the additive effects of increasing the reverse p–n junction currents of individual VLSI elements on the conditions for the occurrence of failures of the entire microcircuit are shown.

The results of the analysis of limitations on the parameters of ion beams during experimental studies to estimate the sensitivity of a VLSI to the influence of heavy charged particles by single event effects (SEEs) are presented. The restrictions on the ion ranges, the bunch structure of the ion beam, the possibilities of changing the linear energy transfer (LET) by changing the angle of incidence of ions, the type of ions, and the use of energy degraders are substantiated.

Applicability of effective LET concept to SEE testing of modern CMOS devices was investigated. Heavy ion irradiations of four CMOS ICs were performed for a wide range of LET values and angles of incidence.

The paper presents an approach to single event rate calculation based on experimental data for a single LET value. This approach minimizes irradiation time while providing a conservative estimation of device's compliance with mission requirements.

The paper concerns experimental results on external conditions such as temperature, voltage supply, current limit, and features of the power circuit on latchup occurrence under uniform laser irradiation.

In an Integrated Circuit with high SEL holding voltage, pulsed-laser radiation sensitivity was found to change due to TID irradiation. The impact of TID on the DUT SEL holding voltage and SEL sensitivity was investigated.

Some features of dominant radiation effects in modern ICs of information, information-computing and control systems when exposed to neutrons are analysed. Occurrence of all main dominant radiation effects in ICs is possible under influence of neutrons. Thus these investigations are essential due to expanding the scope of practical application of VLSI in control systems of nuclear power and physical facilities, affecting the security of information systems. It is shown that the existing models based on the assessment of the equivalence of the average energy release (dose) do not fully adequately describe the effects of neutron radiation exposure. In some cases, there are occurrence of microdosimetric effects and significant deviations due to differences in the processes of primary recombination of excess charge in oxides. These effects should not be ignored. Ionisation energy depends on neutron energy, which leads to differences in the amplitude-time characteristics of the dose rate and the neutron flux density. A significant reduction in switching charges in modern microelectronics leads to the appearance of single event effects when exposed to neutrons, which must also be taken into account when constructing radiation-resistant electronic facilities. The presented results allow us to correctly assess the resistance of semiconductor electronic products to the neutron effects of artificial and natural origin.

Стандартные методы оценки параметров чувствительности к воздействию тяжелых заряженных частиц (ТЗЧ) путем проведения испытаний с плотностями потока частиц, на порядки превышающими плотности потока в реальных условиях эксплуатации, занижают стойкость микросхем со встроенной коррекцией случайных ошибок. В работе рассмотрен подход к проведению расчетно-экспериментальной оценки стойкости, позволяющий корректно оценивать параметры чувствительности таких микросхем по одиночным радиационным эффектам (ОРЭ) сбоев.

The paper presents an analysis of existing approaches to estimation of single event rate (SER) in integrated circuits under effects of charged particles of space radiation environment. These issues are of significant importance in the light of the expansion of the scope of practical application of cyber-physical control systems for space objects, since it is mainly due to the SER that information is lost in the register elements and in the memory cells of the electronic blocks of spacecraft. It is shown that existing models based on energy deposition in fixed sensitive volume are not applicable for SER estimations in case of high threshold linear energy transfer (LET) values. An alternative approach is proposed. It is based on diffusion charge collection model, which can be used to estimate the SER cross-sections in isotropic particle field. A universal dependence for SER estimation in integral circuits (ICs) at geostationary orbit is proposed and used as a basis for establishing classification of devices based on hardness assurance levels. The obtained results provide the grounds for setting test requirements that has to be met during single event effects testing of ICs.

The development of the technological process in electronics has led to the problem of single event upsets (SEU) in microchips when exposed to neutrons causing loss of information and errors. To evaluate sensitivity of CMOS VLSI to SEU caused by neutrons we propose BGR method. To test this approach we apply BGR method to the data obtained by irradiation of several types of ICs:Artix and Spartan FPGAs (Xilinx) and STM32 microcontroller (ST Microelectronics). Test setup was built using modular devices by National Instruments. In this study, we also consider the areas for which neutron influence evaluation is relevant and present an overview of the available data on neutron induced SEU in CMOS chips. A description of the BGR method and experimental results are given.

This article concerns experimental and simulation results on nonstable latchups (SLs) in CMOS integrated circuits (ICs) under pulsed laser irradiation. Different transient responses in elements of the p-n-p-n structure and irregular ionization distribution on the IC surface are the main reasons for non-SLs. Radiation experimental test results are presented as well as a discussion of non-SL mechanisms.

The goal of qualification or monitoring of electronic device radiation testings is to ensure that devices meet the set of requirements. In some cases, this can be achieved without full characterization of radiation behavior, which leads to significant cost reduction of radiation testing. In this paper, we propose an approach to determining the test standards for evaluating the compliance of integrated circuits with the requirements for radiation hardness under heavy charged particle fluxes in outer space, set as restrictions on the frequency of single radiation effects (SER). The SER calculation is based on the known cosmic rays spectrum and effect’s cross-section dependence on linear energy transfer (LET) obtained during radiation testing. The SEE qualification based on test results for just one LET value is performed using additional conservative limits on saturated cross-section and threshold LET values. Analysis of compendium of experimental data has shown that for main SEE types these limiting values can be set as 3 MeVcm2/mg for threshold LET and 30% of chip surface area for saturated cross-section. Those assumptions allows us to calculate fluence and ion LET value required for part qualification for the required SER values. The proposed approach can be used to justify test requirements for SEE testing of integrated circuits.

The problems of the metrological certification of beams of high-energy heavy charged particles (HCPs) and protons that will be used in the study—as well as testing for radiation resistance—of promising products of semiconductor micro- and nanoelectronics, solid-state microwave electronics, and micromechanical systems are considered. One of the main requirements for such beams is ensuring the desired range of linear energy transfer (LET). Two methods for changing the LET are considered, one of which is based on using the ions of various types (16O, 22Ne, 40Ar, 56Fe, 84Kr, 136Xe, 209Bi), and the other is based on using ion of the same type (197Au), but with different energies. The advantages of using both methods are considered and the problems arising when using the second method are analyzed.

The results of research on nonstationary latchup effects (LEs) under the influence of heavy charged particles and ionizing radiation pulses, which are spontaneously counteracted depending on the operating conditions, are presented. This behavior is caused by the effects of the rail span collapse inside the complementary metal-oxide-system (CMOS) of very large scale integrated (VLSI) circuits. The experimental studies are carried out on both the ion accelerator and the laser facilities.