This paper describes for the first time a methodology which allows direct correlation between charging potential, measured in actual process condition using Flash Memory cell as charging sensor, cmd "latent" oxide damage revealed through FN injection on transistors. The methodology was used to study charging effects in a TCP metal etcher with actual process conditions, as function of antenna shape. Significant Vth shifts after FN injection were found only with very dense "finger" antennas, revealing enhanced oxide damage due to the "electron shading" effects. The oxide damage is strictly correlated with the charging potential measured with Flash Memory cells having the same antenna structures as transistors.

Fully processed Flash Memory cells have been used to characterise wafer charging damage in a Transformed Coupled Plasma production metal etcher. Wafers both bare and coated with photoresist were exposed to the plasma, and the actual process conditions were simulated by an Ar-reference discharge. Charging effects due to process parameter changes were evaluated, revealing a strong dependence on RF source configurations. The new methodology was demonstrated to be suitable for process control and production monitoring.

This paper describes a novel methodology based on UV-erased FLASH memory cells, that does not require high Voltage programming before plasma exposure. The methodology was used to evaluate a production TCpTM metal etcher. Bare wafers and wafers coated with photoresist were compared. Charging effects due to the patterning process have been identified and eliminated by proper process change.