Modern short-scale information transmission mainly relies on dissipative charge transport, with electrons scattered by defects and phonons, leading to significant power losses. By contrast, excitons-charge-neutral quasiparticles-offer a playground for electro-optical energy-efficient information transduction and processing owing to their extended lifetimes, charge neutrality and efficient electrostatic control. In this work, we report the observation of fast exciton transport in a van der Waals heterostructure over distances exceeding 10 µm, constrained only by the heterostructure finite size. We observe the presence of excitonic potential ramps that leads to long-range rapid exciton drift and enables rapid dilution of the initial exciton population. Our measurements reveal fast exciton propagation, with interlayer exciton drift velocities of approximately 2.66 × 104 m s-1, within a transport regime that remains robust across a wide range of exciton densities and temperatures up to 150 K. Our work opens avenues for the development of high-speed, energy-efficient excitonic devices, such as field-effect switches and modulators.

Optical microcavities provide a powerful and versatile framework for manipulating the dynamics of photonic emission from optically active materials through light recirculation. Spatially indirect interlayer excitons (IXs) exhibit broad tunability of their emission energy via the quantum-confined Stark effect. However, the electrical tunability of IXs has not been exploited in cavity-coupled systems until now. Here we modulate the detuning between the cavity resonance and the IX emission in a monolithic Fabry-Perot cavity using an applied vertical electric field. We reveal a simultaneous enhancement of both the emission intensity and lifetime of weakly coupled IXs when in resonance with the optical cavity owing to strong Purcell inhibition and cavity transparency effects. We further investigate the tunable momentum dispersion of coupled IXs through back-focal-plane imaging and explain our results by the cavity coupling of IX transition dipoles as supported by theoretical modelling. Our work demonstrates an integration effort enabling the versatile tuning of highly interacting IXs within monolithic cavities, revealing the attractiveness of electrically tunable IX cavity coupling for both fundamental studies towards exciton condensate manipulation and future integration of excitonic devices.

Extended efforts have been devoted to the study of strongly-interacting excitons and their dynamics, towards macroscopic quantum states of matter such as Bose-Einstein condensates of excitons and polaritons. Momentum-direct layer-hybridized excitons in transition metal dichalcogenides have attracted considerable attention due to their high oscillator strength and dipolar nature. However, the tunability of their interactions and dynamics remains unexplored. Here, we achieve an unprecedented control over the nonlinear properties of dipolar layer-hybridized excitons in an electrically gated van der Waals homobilayer monitored by transient optical spectroscopy. By applying a vertical electric field, we reveal strong Coulomb interactions of dipolar hybrid excitons, leading to opposite density-dependent energy shifts of the two main hybrid species based on their dipolar orientation, together with a strongly enhanced optical saturation of their absorption. Furthermore, by electrically tuning the interlayer tunneling between the hybridized carriers, we significantly extend the formation time of hybrid excitons, while simultaneously increasing their decay times. Our findings have implications for the search on quantum blockade and condensation of excitons and dipolaritons in two-dimensional materials.

While most neuromorphic systems are based on nanoscale electronic devices, nature relies on ions for energy-efficient information processing. Therefore, finding memristive nanofluidic devices is a milestone toward realizing electrolytic computers mimicking the brain down to its basic principles of operation. Here, we present a nanofluidic device designed for circuit scale in-memory processing that combines single-digit nanometric confinement and large entrance asymmetry. Our fabrication process is scalable while the device operates at the second timescale with a conductance ratio in the range 10-60. In-operando optical microscopy unveils the origin of memory, arising from the reversible formation of liquid blisters modulating the device conductance. The combination of features of these mechano-ionic memristive switches permits assembling logic circuits composed of two interactive devices and an ohmic resistor. These results open the way to design multi-component ionic machinery, such as nanofluidic neural networks, and implementing brain-inspired ionic computations.

van der Waals heterostructures of two-dimensional materials have unveiled frontiers in condensed matter physics, unlocking unexplored possibilities in electronic and photonic device applications. However, the investigation of wide-gap, high-κ layered dielectrics for devices based on van der Waals structures has been relatively limited. In this work, we demonstrate an easily reproducible synthesis method for the rare-earth oxyhalide LaOBr, and we exfoliate it as a 2D layered material with a measured static dielectric constant of 9 and a wide bandgap of 5.3 eV. Furthermore, our research demonstrates that LaOBr can be used as a high-κ dielectric in van der Waals field-effect transistors with high performance and low interface defect concentrations. Additionally, it proves to be an attractive choice for electrical gating in excitonic devices based on 2D materials. Our work demonstrates the versatile realization and functionality of 2D systems with wide-gap and high-κ van der Waals dielectric environments.

Transition-metal dichalcogenide bilayers exhibit a rich exciton landscape including layer-hybridized excitons, i.e. excitons which are of partly intra- and interlayer nature. In this work, we study hybrid exciton-exciton interactions in naturally stacked WSe2 homobilayers. In these materials, the exciton landscape is electrically tunable such that the low-energy states can be rendered more or less interlayer-like depending on the strength of the external electric field. Based on a microscopic and material-specific many-particle theory, we reveal two intriguing interaction regimes: a low-dipole regime at small electric fields and a high-dipole regime at larger fields, involving interactions between hybrid excitons with a substantially different intra- and interlayer composition in the two regimes. While the low-dipole regime is characterized by weak inter-excitonic interactions between intralayer-like excitons, the high-dipole regime involves mostly interlayer-like excitons which display a strong dipole-dipole repulsion and give rise to large spectral blue-shifts and a highly anomalous diffusion. Overall, our microscopic study sheds light on the remarkable electrical tunability of hybrid exciton-exciton interactions in atomically thin semiconductors and can guide future experimental studies in this growing field of research.

Two-dimensional flat-band systems have recently attracted considerable interest due to the rich physics unveiled by emergent phenomena and correlated electronic states at van Hove singularities. However, the difficulties in electrically detecting the flat-band position in field-effect structures are slowing down the investigation of their properties. In this work, we use indium selenide (InSe) as a flat-band system due to a van Hove singularity at the valence-band edge in a few-layer form of the material without the requirement of a twist angle. We investigate tunnelling photocurrents in gated few-layer InSe structures and relate them to ambipolar transport and photoluminescence measurements. We observe an appearance of a sharp change in tunnelling mechanisms due to the presence of the van Hove singularity at the flat band. We further corroborate our findings by studying tunnelling currents as a reliable probe for the flat-band position up to room temperature. Our results create an alternative approach to studying flat-band systems in heterostructures of two-dimensional materials.

Interactions between out-of-plane dipoles in bosonic gases enable the long-range propagation of excitons. The lack of direct control over collective dipolar properties has so far limited the degrees of tunability and the microscopic understanding of exciton transport. In this work we modulate the layer hybridization and interplay between many-body interactions of excitons in a van der Waals heterostructure with an applied vertical electric field. By performing spatiotemporally resolved measurements supported by microscopic theory, we uncover the dipole-dependent properties and transport of excitons with different degrees of hybridization. Moreover, we find constant emission quantum yields of the transporting species as a function of excitation power with radiative decay mechanisms dominating over nonradiative ones, a fundamental requirement for efficient excitonic devices. Our findings provide a complete picture of the many-body effects in the transport of dilute exciton gases, and have crucial implications for studying emerging states of matter such as Bose-Einstein condensation and optoelectronic applications based on exciton propagation.

The second and final version of ColdADC, called ColdADC_P2, is presented. ColdADC_P2 is a 16-channel, 12-bit, 2 MS/s digitizer application-specific integrated circuit (ASIC) intended for use inside the DUNE Far Detector. ColdADC_P2 contains two 16 MS/s pipelined analog-to-digital converters (ADCs) that each digitizes the output of eight sample-and-hold amplifiers (SHAs). Because the application requires immersion in liquid argon (LAr), ColdADC_P2 was developed using specialized design techniques for long-term reliability in cryogenic environments and a customized cryogenic standard cell library. ColdADC_P2, with a die area of approximately 52.4 mm2 and fabricated in 65-nm CMOS technology, achieves 130- $\mu \text{V}$ rms noise performance and 11.8-bit effective-number-of-bits (ENOB) at a temperature of 77 K, with channel-to-channel crosstalk of < 0.06% while dissipating 338 mW (21 mW per channel). Residual nonlinearity that is consistent with dielectric absorption in the capacitors internal to the ADC is corrected using a lookup table.

Ultrafast photodetectors based on two-dimensional materials suffer from low responsivities and high dark currents. Interlayer exciton dissociation in type-II vertical heterojunctions of transition metal dichalcogenides is a viable mechanism for achieving higher responsivities with picosecond response times. Here, we propose a novel device concept based on these structures, with potential for self-powered photodetector applications characterized by an unprecedented trade-off between speed and responsivity with zero dark current. In order to assess the realistic performance to be expected in the proposed device, we have purposely devised a simulation approach able to provide a detailed investigation of the physics at play, while showing excellent predictive capabilities when compared with experiments on interlayer exciton transport available in the literature. The proposed high-performance photodetectors with tunable responsivities are at reach with available fabrication techniques and could help in paving the way towards monolithically integrated artificial neural networks for ultrafast machine vision in speed sensitive applications.

ColdADC is a low-noise 16-channel analog-to-digital converter ASIC designed for cold readout electronics of Liquid Argon Time Projection Chambers (LArTPCs) in the Deep Underground Neutrino Experiment (DUNE). ColdADC was specifically designed for operation at cryogenic temperatures (77 K–89 K). Cold electronics is considered to be an enabling technology for liquid argon detectors in neutrino experiments. The main function of the chip is to digitize signals from the 16-channel charge-sensitive amplifier designed at BNL (LArASIC) and send digitized signals to the data aggregator and serializer chip (COLDATA). ColdADC operates with a resolution of 12 bits and a sampling rate of 2 MS/s per channel. A complete characterization of prototype chips was conducted at cryogenic temperature, involving power consumption, noise and linearity performance. In the first DUNE Far-Detector module, 384000 data channels will be read out, corresponding to 24000 ColdADC chips. Therefore, systematic testing of ColdADC chips at cryogenic temperature is vital for the quality and reliability of DUNE Single-Phase modules. We have developed a Quality Control (QC) test stand that includes ColdADC evaluation and characterization at cryogenic temperature. The QC procedure was applied to a first batch of 33 chips, corresponding to 528 data channels. The obtained results meet all the required DUNE specifications for ColdADC. Moreover, the testing outcome allowed us to identify possibilities of performance optimization that are currently being addressed in the design of the next version of the chip. The Quality Control procedure is proved to be successful and will be a reference design for future large-batch production testing of final ColdADC ASICs.

A 16-channel, 12-bit, 2 MS/s Digitizer ASIC, called ColdADC, intended as the digitizer for the DUNE Single-Phase Far Detector, is presented. ColdADC has an input buffer per channel and two 16 MS/s Pipelined ADCs that each digitizes the output of 8 preamplifiers. The ASIC was developed using specialized design techniques for long-term reliability in cryogenic environments and a customized cryogenic standard cell library. ColdADC, with a die area of approximately 52.4 mm 2 and fabricated in 65 nm CMOS technology, achieves 186 µV-rms noise performance and 10.5-bit ENOB at a temperature of 77 K, while dissipating 425 mW (26.6 mW per channel). The prototype has been successfully interoperated with the intended preamplifier at cryogenic temperatures.