We describe the structures of two indium complexes obtained during the attempted syntheses of solid-state materials precursors. The geometries of mer-InBr3(pic)(3) 1 and [In(mu-OH)Br-2(pic)(2)center dot 2pic](2) (pic = 4-methylpyridine) are distorted octahedra about the metal atoms. Two molecules which differ mainly with respect to the relative orientation of the gamma-picoline planes are present in the asymmetric unit of I, and a trans influence is observed for the ligands. Two indium atoms and two hydroxyl groups form a four atom ring in 2, with the four bromine atoms not coplanar. A two-fold rotational symmetry axis is present with the two indium atoms occupying special positions. A trans influence is also observed. Two nonequivalent gamma-picolines not coordinated to the metals are present, one of which forms a hydrogen bond to the hydroxyl group while the other exhibits no strong intermolecular associations. (C) 2015 Elsevier B.V. All rights reserved.

We describe the structures of four related indium complexes obtained during synthesis of solid-state materials precursors. Indium adducts of halides and 4-methylpyridine, InX3(pic)3 (X = Cl, Br; pic = 4-methylpyridine) consist of octahedral molecules with meridional (mer) geometry. Crystals of mer-InCl3(pic)3 (1) are triclinic, space group P1(bar) (No. 2), with a = 9.3240(3), b = 13.9580(6), c = 16.7268 (7) A, alpha = 84.323(2), beta = 80.938(2), gamma = 78.274(3)Z = 4, R = 0.035 for 8820 unique reflections. Crystals of mer-InBr3(pic)3 (2) are monoclinic, space group P21/n (No. 14), with a = 15.010(2), b = 19.938(2), c = 16.593(3), beta = 116.44(1)Z = 8, R = 0.053 for 4174 unique reflections. The synthesis and structures of related compounds with phenylsulfide (chloride) (3) and a dimeric complex with bridging hydroxide (bromide) (4) coordination is also described. Crystals of trans-In(SC6H5)Cl2(pic)3 (3) are monoclinic, space group P21/n (No. 14), with a = 9.5265(2), b = 17.8729(6), c = 13.8296(4), beta = 99.7640(15)Z = 4, R = 0.048 for 5511 unique reflections. Crystals of [In(mu-OH)Br2(pic)22 (4) are tetragonal, space group = I41cd (No. 110) with a = 19.8560(4), b = 19.8560(4), c = 25.9528(6), Z = 8, R = 0.039 for 5982 unique reflections.

The inverted metamorphic (IMM) solar cell has a high specific power compared to traditional germanium-based multi-junction solar cells, which may prove beneficial for space applications where costs are weight-driven. In addition, the mechanical flexibility of the IMM cell may be beneficial for new technologies, such as high-power, flexible, deployable arrays currently under development. However, IMM solar cells have not yet demonstrated radiation resistance equal to that of traditional Ge-based multi-junction cells, largely due to degradation in the InGaAs bottom subcell. A structure and process have been developed to incorporate a back surface reflector on the epitaxial lift-off (ELO) IMM solar cell, permitting the InGaAs subcell to be thinned whilst maintaining high optical absorption. The thinner subcell can better tolerate degraded base diffusion lengths following irradiation. In this manner, a significant improvement in the end of life efficiency of ELO IMM solar cells is demonstrated following irradiation with 1 MeV electrons at a fluence of 1×1015 cm-2.

NASA has missions planned to targets in the solar system ranging from the permanently shadowed craters of Mercury to the icy reaches of the Kuiper belt and beyond. In 2011, the NASA Office of the Chief Technologist (OCT) requested the NASA Ames and Glenn Research Centers to assess the potential of small power supplies based on direct conversion of energy from radioisotope sources for future NASA missions; and in particular to assess whether alphavoltaic and betavoltaic power sources could be of potential benefit in small missions, as well as examining the use of miniaturized thermophotovoltaic power supplies. This paper summarizes the results of that assessment.

A proposed 250 Wt Radioisotope Thermophotovoltaic (RTPV) power system for utilization in lunar exploration and the subsequent exploration of Mars is described. Details of emitter selection are outlined for use in a maintenance free power supply that is productive over a 14-year mission life. Thorough knowledge of a material s spectral emittance is essential for accurate modeling of the RTPV system. While sometimes treated as a surface effect, emittance involves radiation from within a material. This creates a complex thermal gradient which is a combination of conductive and radiative heat transfer mechanisms. Emittance data available in the literature is a valuable resource but it is particular to the test sample s physical characteristics and the test environment. Considerations for making spectral emittance measurements relevant to RTPV development are discussed. Measured spectral emittance data of refractory emitter materials is given. Planned measurement system modifications to improve relevance to the current project are presented.

A small, segmented microstrip patch antenna integrated with an X-band feedback oscillator on a high-permittivity substrate has been built and tested. This oscillator antenna is a prototype for demonstrating the feasibility of such devices as compact, low-power-consumption building blocks of advanced, lightweight, phased antenna arrays that would generate steerable beams for communication and remotesensing applications.

Presented here is the recent progress of the NASA Glenn Research Center OMVPE group’s efforts in the development of high efficiency thin-film polycrystalline III-V photovoltaics on optimum substrates. By using bulk polycrystalline germanium (Ge) films, devices of high efficiency and low mass will be developed and incorporated onto low-cost flexible substrates. Our progress towards the integration of high efficiency polycrystalline III-V devices and recrystallized Ge films on thin metal foils is discussed.

Present satellite communications systems normally use separate solar cells and antennas. Since solar cells generally account for the largest surface area of the spacecraft, co-locating the antenna and solar cells on the same substrate opens the possibility for a number of data-rate-enhancing communications link architecture that would have minimal impact on spacecraft weight and size. The idea of integrating printed planar antenna and solar array cells on the same surface has been reported in the literature. The early work merely attempted to demonstrate the feasibility by placing commercial solar cells besides a patch antenna. Recently, Integrating multiple antenna elements and solar cell arrays on the same surface was reported for both space and terrestrial applications. The application of photovoltaic solar cell in a planar antenna structure where the radiating patch antenna is replaced by a Si solar cell has been demonstrated in wireless communication systems (C. Bendel, J. Kirchhof and N. Henze, 3rd Would Photovotaic Congress, Osaka, Japan, May 2003). Based on a hybrid approach, a 6x1 slot array with circularly polarized crossdipole elements co-located on the same surface of the solar cells array has been demonstrated (S. Vaccaro, J. R. Mosig and P. de Maagt, IEEE Trans. Ant. and Propag., Vol. 5 1, No. 8, Aug. 2003). Amorphous silicon solar cells with about 5-10% efficiency were used in these demonstrations. This paper describes recent effort to integrate advanced solar cells with printed planar antennas. Compared to prior art, the proposed WSAC concept is unique in the following ways: 1) Active antenna element will be used to achieve dynamic beam steering; 2) High efficiency (30%) GaAs multi-junction solar cells will be used instead of Si, which has an efficiency of about 15%; 3) Antenna and solar cells are integrated on a common GaAs substrate; and 4) Higher data rate capability. The IA/SAC is designed to operate at X-band (8-12 GH) and higher frequencies Higher operating frequencies enable greater bandwidth and thus higher data transfer rates. The first phase of the effort involves the development of GaAs solar cell MIMs (Monolithically Integrated Module) with a single patch antenna on the opposite side of the substrate. Subsequent work will involve the integration of MIMs and antennas on the same side of the substrate. Results from the phase one efforts will be presented.

The RAINBOW concentrator system is based on a concept of splitting the solar spectrum and focussing each portion on a solar cell having a bandgap matching the input spectral portion. Efficiencies over 40% are predicted for systems using a four-bandgap cell assembly under 20/spl times/ concentration. Reported here are the results of materials growth, processing, and testing of four different solar cells designed to populate the RAINBOW testbed, under development at JPL. The cells are 0.74-eV InGaAs on lattice-matched InP, 1.1-eV InGaAs on lattice-mismatched GaAs, 1.43-eV GaAs on GaAs, and 1.85-eV InGaP on lattice-matched GaAs. Quantum efficiencies between 0.8 and 1.0 have been realized for the spectral region from 0.5 to /spl sim/1.5 /spl mu/m.

AbstractThe sections in this article areMethods Of Epitaxial LiftoffHost SubstratesApplications For Epitaxial Liftoff MaterialsConclusions

A temperature gradient across a thick (greater than or equal to .1 mm) film selective emitter will produce a significant reduction in the spectral emittance from the no temperature gradient case, Thick film selective emitters of rare earth doped host materials such as yttrium-aluminum-garnet (YAG) are examples where temperature gradient effects are important. In this paper a model is developed for the spectral emittance assuming a linear temperature gradient across the film. Results of the model indicate that temperature gradients will result in reductions the order of 20% or more in the spectral emittance.

Neutral metal dithiocarbamate complexes (M(NR2CS2)X) are well-known precursors to metal sulfides, a class of materials with numerous technological applications. We are involved in a research effort to prepare new precursors to metal sulfides using simple, reproducible synthetic procedures. We describe the results of our synthetic and characterization studies for M = Fe, Co, Ni, Cu. and In. For example, treatment of metallic indium with tetramethylthiuram disulfide (tmtd) in 4-methylpyridine (4-Mepy) at 25 deg C produces a new homoleptic indium (III) dithiocarbamate, In(N(CH3)2CS2)3(I), in yields of over 60 percent. The indium (III) dithiocarbamate was characterized by X-ray crystallography; (I) exists in the solid state as discrete distorted-octahedral molecules. Compound (I) crystallizes in the P1bar (No. 2) space group with lattice parameters: a = 9.282(1) A, b = 10.081(1) A, c = 12.502 A, alpha = 73.91(1) deg, beta = 70.21(1) deg, gamma = 85.8(1)deg, and Z = 2. X-ray diffraction and mass spectral data were used to characterize the products of the analogous reactions with Fe, Co, Ni, and Cu. We discuss both use of dithiocarbamates as precursors and our approach to their preparation.

Reaction of metallic indium with benzoyl peroxide in 4-methylpyridine (4-Mepy) at 25 °C produces an eight-coordinate mononuclear indium(III) benzoate, In(η2-O2CC6H5)3(4- Mepy)2 4H2O (I), in yields of up to 60%. The indium(III) benzoate was fully characterized by elemental analysis, spectroscopy, and X-ray crystallography; (I) exists in the crystalline state as discrete eight-coordinate molecules; the coordination sphere around the central indium atom is best described as pseudo-square pyramidal. Thermogravimetric analysis of (I) and X-ray diffraction powder studies on the resulting pyrolysate demonstrate that this new benzoate is an inorganic precursor to indium oxide. Decomposition of (I) occurs first by loss of 4-methylpyridine ligands (100°-200°C), then loss of benzoates with formation of In2O3 at 450°C. We discuss both use of carboxylates as precursors and our approach to their preparation.

ADVERTISEMENT RETURN TO ISSUEPREVArticleNEXTSynthesis, characterization, and decomposition of the first mononuclear eight-coordinate indium(III) benzoate, In(.eta.2-O2CC6H5)3(4-Mepy)2Maria T. Andras, Aloysius F. Hepp, Stan A. Duraj, Eric B. Clark, Daniel A. Scheiman, Phillip E. Fanwick, and David G. HehemannCite this: Inorg. Chem. 1993, 32, 19, 4150–4152Publication Date (Print):September 1, 1993Publication History Published online1 May 2002Published inissue 1 September 1993https://pubs.acs.org/doi/10.1021/ic00071a030https://doi.org/10.1021/ic00071a030research-articleACS PublicationsRequest reuse permissionsArticle Views172Altmetric-Citations17LEARN ABOUT THESE METRICSArticle Views are the COUNTER-compliant sum of full text article downloads since November 2008 (both PDF and HTML) across all institutions and individuals. These metrics are regularly updated to reflect usage leading up to the last few days.Citations are the number of other articles citing this article, calculated by Crossref and updated daily. Find more information about Crossref citation counts.The Altmetric Attention Score is a quantitative measure of the attention that a research article has received online. Clicking on the donut icon will load a page at altmetric.com with additional details about the score and the social media presence for the given article. Find more information on the Altmetric Attention Score and how the score is calculated. Share Add toView InAdd Full Text with ReferenceAdd Description ExportRISCitationCitation and abstractCitation and referencesMore Options Share onFacebookTwitterWechatLinked InRedditEmail Other access optionsGet e-AlertscloseSupporting Info (1)»Supporting Information Supporting Information Get e-Alerts

Previous research efforts have demonstrated small area (0.04 cm) GaAs on Si (GaAs/Si) solar cells with AM0 efficiencies in excess of 17%. These results were achieved on Si substrates coated with a step graded buffer of Si(x),Ge(1-x) alloys graded to 100% Ge. Recently, a 100-fold increase in device area was accomplished for these devices in preparation for on-orbit testing of this technology aboard Materials International Space Station Experiment number 5 (MISSE5). The GaAs/Si MISSE5 experiment contains five (5) GaAs/Si test devices with areas of lcm(exp 2) and 4cm(exp 4) as well as two (2) GaAs on GaAs control devices. Electrical performance data, measured on-orbit for three (3) of the test devices and one (1) of the control devices, will be telemetered to ground stations daily. After approximately one year on orbit, the MISSE5 payload will be returned to Earth for post flight evaluation. This paper will discuss the development of the GaAs/Si devices for the MISSE5 flight experiment and will present recent ground and on-orbit performance data.