Platinum thin films are suitable candidates as electrodes for high permittivity and ferroelectric oxides. Pt films were prepared by metal organic chemical vapor deposition (MOCVD) using a direct liquid delivery system. This method is based on the oxidative decomposition of (methylcyclopentadienyl)trimethylplatinum (MeCpPtMe3), as a precursor, diluted in cyclohexane solvent. Different deposition conditions were used to grow high purity platinum films on TiO2/SiO2/Si and SiO2 substrates. Adhesion properties of the Pt CVD films on TiO2 were found to be better than directly on SiO2 since TiO2 acts as a 'glue layer'. Platinum films deposited exhibit a roughness ranged from 3.1 to 4.5 nm and a thickness between 60 and 100 nm.