At sub-Kelvin temperatures, two-level systems (TLSs) present in amorphous dielectrics source a permittivity noise, degrading the performance of a wide range of devices using superconductive resonators such as qubits or kinetic inductance detectors. We report here on measurements of TLS noise in hydrogenated amorphous silicon (a-Si:H) films deposited by plasma-enhanced chemical vapor deposition in superconductive lumped element resonators using parallel-plate capacitors. The TLS noise results presented in this article for two recipes of a-Si:H improve on the best results achieved in the literature by a factor >5 for a-Si:H and other amorphous dielectrics and are comparable to those observed for resonators deposited on crystalline dielectrics.

In this article, we present the design, fabrication, and characterization of a 100 mm diameter, flat, gradient-index (GRIN) lens fabricated with high-resistivity silicon, combined with a three-layer antireflection (AR) structure optimized for 160-355 GHz. Multidepth, deep reactive-ion etching enables patterning of silicon wafers with subwavelength structures (posts or holes) to locally change the effective refractive index and, thus, create AR layers and a radial index gradient. The structures are nonresonant and, for sufficiently long wavelengths, achromatic. Hexagonal holes varying in size with distance from the optical axis create a parabolic index profile decreasing from 3.15 at the center of the lens to 1.87 at the edge. The AR structure consists of square holes and cross-shaped posts. We have fabricated a lens consisting of a stack of five 525 mu m thick GRIN wafers and one AR wafer on each face. We have characterized the lens over the frequency range 220-330 GHz, obtaining behavior consistent with Gaussian optics down to-14 dB and transmittance of 99 +/- 3%.

Passive imaging through optical obscurants is a promising application for mm-wave sensing. We have thus developed the Superconducting Kinetic Inductance Passive Radiometer (SKIPR), a 150 GHz polarization-sensitive photometric camera optimized for terrestrial imaging using a focal plane array with 3,840 kinetic inductance detectors (KIDs). We present a full description of the instrument design, with a particular emphasis on the cryogenic system based on a Gifford-McMahon cryocooler with a two-stage Adiabatic Demagnetization Refrigerator and a dedicated 1.59 m crossed Dragone telescope with an altitude/azimuth mount. We include a detailed lab-based characterization of the KIDs, which results in a determination of their superconducting resonator parameters and optical properties. We also present in situ measurements from the telescope, including point-spread functions and noise characterization. In sum, we find that SKIPR performs as expected, providing diffraction-limited imaging with detector noise performance set by the random arrivals of photons from the ambient background. There is minimal variation in detector characteristics over the full SKIPR focal plane array, and the overall detector yield is 92 per cent.

Two-level systems (TLS) are an important, if not dominant, source of loss and noise for superconducting resonators such as those used in kinetic inductance detectors and some quantum information science platforms. They are similarly important for loss in photolithographically fabricated superconducting mm-wave/THz transmission lines. For both lumped-element and transmission-line structures, native amorphous surface oxide films are typically the sites of such TLS in nonmicrostripline geometries, while loss in the (usually amorphous) dielectric film itself usually dominates in microstriplines. We report here on the demonstration of low TLS loss at GHz frequencies in hydrogenated amorphous silicon (a-Si:H) films deposited by plasma-enhanced chemical vapor deposition in superconducting lumped-element resonators using parallel-plate capacitors (PPCs). The values we obtain from two recipes in different deposition machines, 7x10-6 and 12x10-6, improve on the best achieved in the literature by a factor of 2-4 for a-Si:H and are comparable to recent measurements of amorphous germanium. Moreover, we have taken care to extract the true zero-temperature, low-field loss tangent of these films, accounting for temperature and field saturation effects that can yield misleading results. Such robustly fabricated and characterized films render the use of PPCs with deposited amorphous films a viable architecture for superconducting resonators and they also promise extremely low loss and high quality factor for photolithographically fabricated superconducting mm-wave/THz transmission lines used in planar antennas and resonant filters.

We present the optical characterization of two-scale hierarchical phased-array antenna kinetic inductance detectors (KIDs) for millimeter/submillimeter wavelengths. Our KIDs have a lumped-element architecture with parallel plate capacitors and aluminum inductors. The incoming light is received with a hierarchical phased array of slot-dipole antennas, split into 4 frequency bands (between 125 GHz and 365 GHz) with on-chip lumped-element band-pass filters, and routed to different KIDs using microstriplines. Individual pixels detect light for the 3 higher frequency bands (190-365 GHz) and the signals from four individual pixels are coherently summed to create a larger pixel detecting light for the lowest-frequency band (125-175 GHz). The spectral response of the band-pass filters was measured using Fourier transform spectroscopy (FTS), the far-field beam pattern of the phased-array antennas was obtained using an infrared source mounted on a 2-axis translating stage, and the optical efficiency of the KIDs was characterized by observing loads at 294 K and 77 K. We report on the results of these three measurements.

The Next-generation Extended Wavelength-MUltiband Sub/millimeter Inductance Camera (NEW-MUSIC) on the Leighton Chajnantor Telescope (LCT) will be a first-of-its-kind, six-band, transmillimeter-wave ("trans-mm") polarimeter covering 2.4 octaves of spectral bandwidth to open a new window on the trans-mm time-domain frontier, in particular new frontiers in energy, density, time, and magnetic field. NEW-MUSIC's broad spectral coverage will also enable the use of the Sunyaev-Zeldovich effects to study accretion, feedback, and dust content in the hot gaseous haloes of galaxies and galaxy clusters. Six-band spectral energy distributions, with polarization information, will yield new insights into stellar and planetary nurseries. NEW-MUSIC will employ hierarchical, phased arrays of polarization-sensitive superconducting slot-dipole antennas, coupled to photolithographic bandpass filters, to nearly optimally populate LCT's 14 ' field-of-view with six spectral bands over 80-420 GHz (1:5.25 spectral dynamic range; 2.4 octaves). Light will be routed to Al or AlMn microstripline-coupled, parallel-plate capacitor, lumped-element kinetic inductance detectors (MS-PPC-LEKIDs), an entirely new KID architecture that substantially enhances design flexibility while providing background-limited performance. Innovative, wide-bandwidth, etched silicon structures will be used to antireflection-treat the back-illuminated focal plane. NEW-MUSIC will cost-effectively reuse much of the MUSIC instrument, initially deploying a quarter-scale focal plane capable of the bulk of NEW-MUSIC science followed later by a full-FoV focal plane needed for NEW-MUSIC wide-area survey science.

We present a multi-chroic kinetic inductance detector (KID) pixel design integrated with a broadband hierarchical phased-array antenna. Each low-frequency pixel consists of four high-frequency pixels. Four passbands are designed from 125 to 365 GHz according to the atmospheric windows. The lumped element KIDs consist of 100-nm thick AlMn inductors and Nb parallel plate capacitors with hydrogenated amorphous Si dielectric. Two different coupling structures are designed to couple millimeter-wave from microstrip lines to KIDs. The KID designs are optimized for a 10-m-class telescope at a high, dry site, for example, the Leighton Chajnantor Telescope. Preliminary measurement results using Al KIDs are discussed.

We present the design, simulation, and planned fabrication process of a flat high resistivity silicon gradient index (GRIN) lens for millimeter and submillimeter wavelengths with very low absorption losses. The gradient index is created by sub wavelength holes whose size increases with the radius of the lens. The effective refractive index created by the subwavelength holes is constant over a very wide bandwidth, allowing the fabrication of achromatic lenses up to submillimeter wavelengths. The designed GRIN lens was successfully simulated and shows an expected efficiency better than that of a classic silicon plano-concave spherical lens with approximately the same thickness and focal length. Deep reactive ion etching (DRIE) and wafer-bonding of several patterned wafers will be used to realize our first GRIN lens prototype.

Future instruments employing cryogenic detectors for millimeter and submillimeter astronomy applications can benefit greatly from silicon vacuum windows with broadband antireflection treatment. Silicon is an ideal optical material at these wavelengths due to numerous attractive properties, including low loss, high refractive index, and high strength. However, its high index (\(n=3.4\)) necessitates antireflection (AR) treatment, which has proven a major challenge, especially for the multilayer treatments required for wide spectral bandwidths. We address this challenge by developing a wide-bandwidth integral AR structure for silicon vacuum windows using a novel fabrication technique, tuning the effective refractive index of each AR layer using deep reactive ion etching (DRIE) and using wafer bonding to assemble the structure. We present the progress we have made in designing and fabricating such vacuum windows from 100-mm-diameter silicon wafers. We have previously demonstrated a two-layer AR structure for windows over a 1.6:1 bandwidth and are currently fabricating a four-layer coating designed for a 4:1 bandwidth. We have also converged on a design for a six-layer structure optimized to give − 20 dB reflection between 80 and 420 GHz (5.25:1 bandwidth), which will be useful for future multicolor Sunyaev–Zel’dovich (SZ) observations.

Although high-resistivity, low-loss silicon is an excellent material for terahertz transmission optics, its high refractive index necessitates an antireflection treatment. We fabricated a wide-bandwidth, two-layer antireflection treatment by cutting subwavelength structures into the silicon surface using multi-depth deep reactive-ion etching (DRIE). A wafer with this treatment on both sides has <-20  dB (<1%) reflectance over 187-317 GHz at a 15° angle of incidence in TE polarization. We also demonstrated that bonding wafers introduce no reflection features above the -20  dB level (also in TE at 15°), reproducing previous work. Together these developments immediately enable construction of wide-bandwidth silicon vacuum windows and represent two important steps toward gradient-index silicon optics with integral broadband antireflection treatment.

Many applications in astronomy from tens of GHz to THz frequencies, on the ground and in space, would benefit from silicon optics because silicon's high refractive index and low loss make it an ideal optical material at these frequencies. Silicon can also be used for ambient temperature vacuum windows, however, it's large refractive index necessitates an antireflection coating. Moreover, multilayer antireflection treatments are necessary for wide spectral bandwidths, with wider bandwidths requiring more layers. To this end, we are developing multilayer coatings for silicon by bonding together wafers individually patterned with deep reactive ion etching (DRIE).While a standard approach to antireflection coating is to deposit or laminate dielectric layers of appropriate refractive index, it is difficult (but not impossible) to find low loss dielectrics with the correct refractive index and other properties to match silicon well, especially if more than one layer is required, operation up to THz frequencies is desired, and/or the optic will be used cryogenically. Textured surfaces are an attractive alternative to dielectric antireflection coatings. For millimeter wavelengths, multi-layer antireflection textures with up to 4:1 bandwidths have been cut successfully into silicon lens surfaces with a dicing saw, but this technique becomes unusable at frequencies of 300 GHz and higher given the saw dimensions. Laser machining is being explored but demonstrations are not yet available. DRIE works well on flat surfaces (and has been demonstrated for narrowband windows to THz frequencies), but there are limits to the depth and aspect ratio of the features it can create. Furthermore, etching has not been adapted to large, curved optics.We are pursuing a hybrid approach to this problem: construct a silicon optic by stacking flat patterned wafers. The starting point is a multilayer optical design incorporating both an axial gradient in the refractive index for antireflection and a radial index gradient for focusing. For each optical layer, a hole or post pattern is used to achieve the required effective index of refraction. Using a novel multilayer etching procedure, several layers of the optical structure are fabricated on a flat wafer. Several individually patterned wafers are stacked and bonded together to produce the completed optic. This approach can thus address the aspect ratio limitations of DRIE, and it obviates etching on curved surfaces.We present our results to date, which include simulations, fabrication and measurements of 2- and 4-layer coatings with wafer-bonding, on high resistivity silicon wafers, at 75-330 GHz. The good agreement between the simulations and the test results validates the fabrication and test setup, and allows us to continue the development of larger bandwidth and more efficient coatings. Our near-term goal is to produce a 10-cm lens with a 7-layer coating providing 5.5:1 bandwidth from 75 to 420 GHz, with less than 1% reflection, eventually scaling up to 15-cm, 30-cm, and larger elements.

Silicon optics with wide bandwidth anti-reflection (AR) coatings, made of multi-layer textured silicon surfaces, are developed for millimeter and submillimeter wavelengths. Single and double layer AR coatings were designed for an optimal transmission centered on 250 GHz, and fabricated using the DRIE (Deep Reaction Ion Etching) technique. Tests of high resistivity silicon wafers with single-layer coatings between 75 GHz and 330 GHz are presented and compared with the simulations.