Moiré superlattices host narrow minibands whose bandwidth governs correlated and topological phases. Here, we demonstrate that the bandwidth also sets the critical current for the onset of out-of-equilibrium transport. In bilayer graphene aligned to hexagonal boron nitride, we explore the high-current transport regime as we continuously flatten the valence miniband using an out-of-plane displacement field. We observe a significant reduction in the critical current, which is captured by a minimal analytical model and corresponds to the calculated narrowing of the miniband. Moreover, by comparing distinct moiré platforms, we show that the scaling between critical current and bandwidth is a universal feature of graphene superlattices. Our results reveal a direct link between miniband dispersion and high-current transport, and establish this regime as a fast and accessible electrical probe of bandwidth evolution.

The confinement of electromagnetic radiation within extremely small volumes offers an effective means to significantly enhance light-matter interactions, to the extent that zero-point quantum vacuum fluctuations can influence and control the properties of materials. Here, we develop a theoretical framework for the quantum electrodynamics of graphene Landau levels embedded in a deep-subwavelength hyperbolic cavity, where light is confined into ultrasmall mode volumes. By studying the spectrum, we discuss the emergence of polaritons, and disentangle the contributions of resonant quantum vacuum effects from those of purely electrostatic interactions. Finally, we study the hybridization between magnetoplasmons and the cavity modes.

Solid-state quantum emitters (QEs) in two-dimensional semiconductors offer compact, chip-compatible sources for quantum photonics. In transition-metal dichalcogenides (TMDs), nanopillars are widely used to induce localized emission, yet the underlying confinement mechanism and the relative roles of strain versus dielectric environment remain unclear. The general problem addressed here is whether strain alone explains quantum emitter formation and placement in MoSe_2, or whether dielectric contrast at suspended-supported interfaces is also required. Here, we combine hyperspectral superlocalization of photoluminescence with co-registered AFM topography and phase to map the positions of localized states (LS) in MoSe_2 suspended on GaN pillars and correlate them with bending strain and the local dielectric context. Contrary to the common assumption of purely strain-driven activation, LS frequently occur at suspended–supported interfaces around the pillar apex and span a broad strain range without a clear threshold, while being scarce along high-strain ripples. Our data indicate that deterministic emitter positioning in Mo-based TMDs benefits from co-engineering both strain gradients and nanoscale dielectric heterogeneity, rather than strain alone. More broadly, this combined optical-mechanical characterization approach provides a general framework for mapping structure-property relationships in 2D quantum materials at the single-emitter level.

Phase singularities-points carrying quantized topological charge-are universal features found across diverse wave systems from superfluids and superconductors to acoustic and optical fields1-4. Ensembles of these singularities exhibit distance correlations resembling particles in liquids5-8, extensively studied for their role in exotic material phases9-11. By contrast, the full correlations in phase space that govern the system evolution have remained unexplored and experimentally inaccessible. Here we directly measure the ultrafast dynamics of optical singularity ensembles, capturing their full phase-space correlations, presenting the joint distance-velocity distribution. Our observations show a breakdown of the particle-singularity analogy12: phase singularities accelerate towards formally divergent velocities in the moment before annihilation7,13,14, indicated by measurements of velocities exceeding the speed of light. These apparent superluminal velocities are paradoxically amplified by the slow group velocity of hyperbolic phonon polaritons in our material platform, hexagonal boron nitride membranes15-19. We demonstrate these phenomena using combined hardware and algorithmic advances in ultrafast electron microscopy18,20-25, achieving spatial and temporal resolutions, each an order of magnitude below the polaritonic wavelength and cycle period. Our findings deepen our understanding of phase singularities and their universality, enabling to probe topological defect dynamics at previously unattainable timescales.

Abstract Solid-state quantum emitters (QEs) in two-dimensional semiconductors offer compact, chip-compatible sources for quantum photonics. In transition-metal dichalcogenides (TMDs), nanopillars are widely used to induce localized emission, yet the underlying confinement mechanism and the relative roles of strain versus dielectric environment remain unclear. Here we combine hyperspectral superlocalization of photoluminescence with coregistered AFM topography and phase to map localized states (LS) positions in MoSe2 on GaN nanopillars and correlate them with bending strain and the local environment. Contrary to a purely strain-driven picture, LS cluster at suspended–supported interfaces around the pillar apex and span a broad strain range with no clear threshold, while being scarce along high-strain ripples. We discuss the candidate mechanisms, including the local dielectric environment, and suggest coengineering of strain gradients and nanoscale interface heterogeneity for deterministic emitter positioning in TMDs.

The advent of 2D materials has revolutionized condensed matter physics and materials science, offering unprecedented opportunities to explore exotic physical phenomena, engineer novel functionalities, and address critical technological challenges across diverse fields. Over the past two decades, the exploration of 2D materials has expanded beyond graphene, encompassing a vast library of atomically thin crystals and their heterostructures. These materials exhibit extraordinary electronic, optical, thermal, mechanical, and chemical properties, and hold promise for breakthroughs in electronics, optoelectronics, quantum technologies, energy storage, catalysis, thermal management, filtration and separation, and beyond. Many exciting new physics and phenomena continue to emerge, while select 2D materials, such as graphene, h-BN, and the semiconducting transition metal dichalcogenides (TMDCs), are transitioning from laboratory-scale demonstrations to industrial applications. In this context, a holistic understanding of synthesis, structure-property relationships, integration, and performance optimization is essential. This roadmap reviews the multifaceted challenges and opportunities in 2D materials research, focusing on the synthesis, properties and applications of representative systems including graphene and its derivatives, TMDCs, MXenes as well as their heterostructures and moiré systems.

Two-dimensional crystals and their heterostructures unlock access to a class of photonic devices, bringing nanophotonics from the nanometer scale down to the atomic level where quantum effects are relevant. Single-photon emitters are central in quantum photonics as quantum markers linked to their electrostatic, thermal, magnetic, or dielectric environment. This aspect is exciting in two-dimensional (2D) crystals and their heterostructures, where the environment can be abruptly modified through vertical stacking or lateral structuring, such as moiré or nano-patterned gates. To further develop 2D-based quantum photonic devices, there is a need for quantum markers that are capable of integration into various device geometries and that can be read out individually, non-destructively, and without additional electrodes. Here, we show how to optically detect charge carrier accumulation using sub-GHz linewidth SPEs coupled to a graphene device. We employ the single molecule Stark effect, sensitive to the electric fields generated by charge puddles, such as those at the graphene edge. The same approach enables dynamic sensing of electronic noise, and we demonstrate the optical readout of low-frequency white noise in a biased graphene device. The approach described here can be further exploited to explore charge dynamics in 2D heterostructures using quantum emitter markers.

Moir\'e materials represent strongly interacting electron systems bridging topological and correlated physics. Despite significant advances, decoding wavefunction properties underlying the quantum geometry remains challenging. Here, we utilize polarization-resolved photocurrent measurements to probe magic-angle twisted bilayer graphene, leveraging its sensitivity to the Berry connection that encompasses quantum "textures" of electron wavefunctions. Using terahertz light resonant with optical transitions of its flat bands, we observe bulk photocurrents driven by broken symmetries and reveal the interplay between electron interactions and quantum geometry. We observe inversion-breaking gapped states undetectable through quantum transport, sharp changes in the polarization axes caused by interaction-induced band renormalization, and recurring photocurrent patterns at integer fillings of the moir\'e unit cell that track the evolution of quantum geometry through the cascade of phase transitions. The large and tunable terahertz response intrinsic to flat-band systems offers direct insights into the quantum geometry of interacting electrons and paves the way for innovative terahertz quantum technologies.

Detecting individual light quanta is essential for quantum information, space exploration, advanced machine vision, and fundamental science. In this work, we introduce a single-photon detection mechanism using highly photosensitive nonequilibrium electron phases in moiré materials. Using tunable bands in bilayer graphene/hexagonal boron nitride superlattices, we engineer negative differential conductance and a sensitive bistable state capable of detecting single photons. Operating in this regime, we demonstrate single-photon counting at mid-infrared (11.3 micrometers) and visible wavelengths (675 nanometers) and temperatures up to 25 kelvin. This detector offers prospects for broadband, high-temperature quantum technologies with complementary metal-oxide semiconductor compatibility and seamless integration into photonic-integrated circuits. Our analysis suggests that the underlying mechanism originates from superlattice-induced negative differential velocity.

The electronic properties of two-dimensional (2D) metals are altered by changes in their three-dimensional dielectric environment. In this Letter we propose that superconductivity can be induced in a 2D metal by resonant coupling between its plasmonic collective modes and optical phonons in a nearby polar dielectric. Specifically, we predict that relatively high-temperature superconductivity can be induced in bilayer graphene twisted to an angle somewhat larger than the magic value by surrounding it with a THz polar dielectric. Our conclusions are based on numerical solutions of Eliashberg equations for massless Dirac fermions with tunable Fermi velocities and Fermi energies, and can be understood qualitatively in terms of a generalized McMillan formula.

Over the past two decades, 2D materials have rapidly evolved into a diverse and expanding family of material platforms. Many members of this materials class have demonstrated their potential to deliver transformative impact on fundamental research and technological applications across different fields. In this roadmap, we provide an overview of the key aspects of 2D material research and development, spanning synthesis, properties and commercial applications. We specifically present roadmaps for high impact 2D materials, including graphene and its derivatives, transition metal dichalcogenides, MXenes as well as their heterostructures and moiré systems. The discussions are organized into thematic sections covering emerging research areas (e.g., twisted electronics, moiré nano-optoelectronics, polaritronics, quantum photonics, and neuromorphic computing), breakthrough applications in key technologies (e.g., 2D transistors, energy storage, electrocatalysis, filtration and separation, thermal management, flexible electronics, sensing, electromagnetic interference shielding, and composites) and other important topics (computational discovery of novel materials, commercialization and standardization). This roadmap focuses on the current research landscape, future challenges and scientific and technological advances required to address, with the intent to provide useful references for promoting the development of 2D materials.

Triggered by the development of exfoliation and the identification of a wide range of extraordinary physical properties in self-standing films consisting of one or few atomic layers, two-dimensional (2D) materials such as graphene, transition metal dichalcogenides (TMDs), and other van der Waals (vdW) crystals currently constitute a wide research field protruding in multiple directions in combination with layer stacking and twisting, nanofabrication, surface-science methods, and integration into nanostructured environments. Photonics encompasses a multidisciplinary collection of those directions, where 2D materials contribute with polaritons of unique characteristics such as strong spatial confinement, large optical-field enhancement, long lifetimes, high sensitivity to external stimuli (e.g., electric and magnetic fields, heating, and strain), a broad spectral range from the far infrared to the ultraviolet, and hybridization with spin and momentum textures of electronic band structures. The explosion of photonics with 2D materials as a vibrant research area is producing breakthroughs, including the discovery and design of new materials and metasurfaces with unprecedented properties as well as applications in integrated photonics, light emission, optical sensing, and exciting prospects for applications in quantum information, and nanoscale thermal transport. This Roadmap summarizes the state of the art in the field, identifies challenges and opportunities, and discusses future goals and how to meet them through a wide collection of topical sections prepared by leading practitioners.

Chirality-induced spin selectivity (CISS) is an effect that has recently attracted a great deal of attention in chiral chemistry and that remains to be understood. In the CISS effect, electrons passing through chiral molecules acquire a large degree of spin polarization. In this work we study the case of atomically-thin chiral crystals created by van der Waals assembly. We show that this effect can be spectacularly large in systems containing just two monolayers, provided they are spin-orbit coupled. Its origin stems from the combined effects of structural chirality and spin-flipping spin-orbit coupling. We present detailed calculations for twisted homobilayer transition metal dichalcogenides, showing that the chirality-induced spin polarization can be giant, e.g. easily exceeding $50\%$ for ${\rm MoTe}_2$. Our results clearly indicate that twisted quantum materials can operate as a fully tunable platform for the study and control of the CISS effect in condensed matter physics and chiral chemistry.

While it has long been accepted that the role of momentum dark excitons in the photoresponse of transition metal dichalcogenides (TMDs) is critical, their weak optical signature inhibits their study through conventional means. Here we expose the room-temperature contributions of both bright and dark excitons to the behavior of a TMD, WSe2, from monolayer to multilayer to bulk. To do so, we present dual action spectroscopy, a photocurrent- and luminescence-detected Fourier-transform excitation spectroscopy scheme, to microscopically map the energy landscape of WSe2. While bright excitons naturally dominate the luminescence response of the material, dark excitons dominate the current response. Notably, the dark KK' exciton is more accessible than the ground state KΛ, while current maps reveal a disparity in the diffusivity of the two states. This work provides the basis for a new, current-detected approach to study the dynamics of dark exciton states across different materials.

Van der Waals heterostructures are at the forefront in materials heterostructure engineering, offering the ultimate control in layer selectivity and capability to combine virtually any material. Hexagonal boron nitride (hBN), the most commonly used dielectric material, has proven indispensable in this field, allowing the encapsulation of active 2D materials preserving their exceptional electronic quality. However, not all device applications require full encapsulation but rather require open surfaces, or even selective patterning of hBN layers. Here, we report on a procedure to engineer top hBN layers within van der Waals heterostructures while preserving the underlying active 2D layers. Using a soft selective SF6 etching combined with a series of pre and post-etching treatments, we demonstrate that pristine surfaces can be exposed with atomic flatness while preserving the active layers electronic quality. We benchmark our technique using graphene encapsulated with hBN Hall bar devices. Using Raman spectroscopy combined with quantum transport, we show high quality can be preserved in etched regions by demonstrating low temperature carrier mobilities of 200,000 cm2Vs-1, ballistic transport probed through magnetic focusing, and intrinsic room temperature phonon-limited mobilities. Atomic force microscopy brooming and O2 plasma cleaning are identified as key pre-etching steps to obtaining pristine open surfaces while preserving electronic quality. The technique provides a clean method for opening windows into mesoscopic van der Waals devices that can be used for local probe experiments, patterning top hBN in situ, and exposing 2D layers to their environment for sensing applications.

We present free-electron imaging of sub-cycle spatio-temporal dynamics of 2D polariton wavepackets, demonstrating the first simultaneous time-, space-, and phase-resolved measurement of such phenomena, and resolving their novel features like vortex-anti-vortex singularities for record-low intensities.

In recent years, the telecommunications field has experienced an unparalleled proliferation of wireless data traffic. Innovative solutions are imperative to circumvent the inherent limitations of the current technology, in particular in terms of capacity. Carrier frequencies in the sub-terahertz (sub-THz) range (~0.2-0.3 THz) can deliver increased capacity and low attenuation for short-range wireless applications. Here, we demonstrate a direct, passive and compact sub-THz receiver based on graphene, which outperforms state-of-the-art sub-THz receivers. These graphene-based receivers offer a cost-effective, CMOS-compatible, small-footprint solution that can fulfill the size, weight, and power consumption (SWaP) requirements of 6G technologies. We exploit a sub-THz cavity, comprising an antenna and a back mirror, placed in the vicinity of the graphene channel to overcome the low inherent absorption in graphene and the mismatch between the areas of the photoactive region and the incident radiation, which becomes extreme in the sub-THz range. The graphene receivers achieve a multigigabit per second data rate with a maximum distance of ~3 m from the transmitter, a setup-limited 3 dB bandwidth of 40 GHz, and a high responsivity of 0.16 A/W, enabling applications such as chip-to-chip communication and close proximity device-to-device communication.

Ever since the initial experimental observation of correlated insulators and superconductivity in the flat Dirac bands of magic angle twisted bilayer graphene, a search for the microscopic description that explains its strong electronic interactions has begun. While the seemingly disagreeing electronic transport and scanning tunneling microscopy experiments suggest a dichotomy between local and extended electronic orbitals, definitive experimental evidence merging the two patterns together has been much sought after. Here, we report on the local photothermoelectric measurements in the flat electronic bands of twisted symmetric trilayer graphene (TSTG). We use a cryogenic scanning near-field optical microscope with an oscillating atomic force microscopy (AFM) tip irradiated by the infrared photons to create a nanoscopic hot spot in the planar samples, which generates a photocurrent that we probe globally. We observe a breakdown of the non-interacting Mott formalism at low temperatures (10K), signaling the importance of the electronic interactions. Our measurements reveal an overall negative offset of the Seebeck coefficient and significant peaks of the local photovoltage values at all positive integer fillings of the TSTG's moir\'e superlattice, further indicating a substantial deviation from the classical two-band semiconductor Seebeck response. We explain these observations using the interacting topological heavy-fermion model. In addition, our data reveal a spatial variation of the relative interaction strength dependent on the measured local twist angle (1.2{\deg} - 1.6{\deg}). Our findings provide experimental evidence of heavy fermion behaviour in the topological flat bands of moir\'e graphene and epitomize an avenue to apply local thermoelectric measurements to other strongly correlated materials in the disorder-free limit.

Second-order superlattices form when moir\'e superlattices of similar dimensions interfere with each other, leading to even larger superlattice periodicities. These crystalline structures have been engineered utilizing two-dimensional (2D) materials such as graphene and hexagonal boron nitride (hBN) under specific alignment conditions. Such specific alignment has shown to play a crucial role in facilitating correlation-driven topological phases featuring the quantized anomalous Hall effect. While signatures of second-order superlattices have been found in transport experiments, any real-space visualization is lacking to date. In this work, we present cryogenic nanoscale photovoltage (PV) measurements that reveal a second-order superlattice in magic-angle twisted bilayer graphene (MATBG) closely aligned to hBN. This is evidenced by long-range periodic photovoltage modulations across the entire sample backed by corresponding electronic transport features. Our theoretical framework shows that small strain- or twist-angle variations can lead to a drastic shift between a local one-dimensional, square or triangular superlattices. Our real-space observations shed new light on the mechanisms responsible for breaking spatial symmetries in TBG and pave an avenue to engineer long-range superlattice structures in 2D materials.

Chirality pervades natural processes from the atomic to the cosmic scales, crucially impacting molecular chemistry and pharmaceutics. Traditional chirality sensing methods face challenges in sensitivity and efficiency, prompting the quest of novel chiral recognition solutions based on nanophotonics. In this work we theoretically investigate the possibility to carry out enantiomeric discrimination by measuring the spontaneous emission rate of chiral molecules on twisted two-dimensional materials. We first present a general theoretical framework based on dyadic Green's functions to calculate the chiral contribution to the decay rate in the presence of a generic chiral bilayer interface. We then combine this theory with density functional theory to obtain numerical estimates of the decay rate of helical bilayer nanographene molecules placed on top of twisted bilayer graphene.