Vapourization products of materials in the Cu-As-Se system have been investigated by means of mass spectroscopy. The analysis of mass spectra of the samples show that binary compounds of the binary As-Se system prevail in the gaseous phase. However, the composition of the gaseous phase is much simpler in comparison with mass spectra of the samples of binary system.

physica status solidi (a)Volume 124, Issue 2 p. K145-K148 Short Note A Note on the Study of the Refractive Index of As2S3 Films Evaporated onto Glass Substrates F. Lukeš, F. Lukeš Department of Solid State Physics, Faculty of Science, Masaryuk University, Brno Search for more papers by this authorK. Navrátil, K. Navrátil Department of Solid State Physics, Faculty of Science, Masaryuk University, Brno Search for more papers by this authorZ. Cimpl, Z. Cimpl Department of Physics, Institute of Chemical Technology, Pardubice Search for more papers by this authorF. Kosek, F. Kosek Department of Physics, Institute of Chemical Technology, Pardubice Search for more papers by this author F. Lukeš, F. Lukeš Department of Solid State Physics, Faculty of Science, Masaryuk University, Brno Search for more papers by this authorK. Navrátil, K. Navrátil Department of Solid State Physics, Faculty of Science, Masaryuk University, Brno Search for more papers by this authorZ. Cimpl, Z. Cimpl Department of Physics, Institute of Chemical Technology, Pardubice Search for more papers by this authorF. Kosek, F. Kosek Department of Physics, Institute of Chemical Technology, Pardubice Search for more papers by this author First published: 16 April 1991 https://doi.org/10.1002/pssa.2211240240Citations: 6 Kotlářská 2, CS-611 37 Brno, Czechoslovakia. Nám. čs. legii 565, CS-532 10 Pardubice, Czechoslovakia. AboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onFacebookTwitterLinkedInRedditWechat Citing Literature Volume124, Issue216 April 1991Pages K145-K148 RelatedInformation

The reverse dark current-voltage characteristics of amorphous-polycrystalline heterojunctions based on an oriented polycrystalline N-type CdSe and a high-resistance amorphous P-type As2Se3 have been examined. Electronic states at the interface which are introduced during processing cause the low dark reverse current. Experimental I–V characteristics are in agreement with a theoretical model of electronic transport parameters of a-c heterojunctions with a built-in charge at the interface.

The volume expansion of chalcogenide layers is studied using the theory of bimetalic plates. The layers are evaporated on mica substrates and the bending of such composite during the raising of the temperature is measured. The differences between AsS, AsSe, and AsTe layers and the influence of irradiation and temperature are discussed. Die Volumenausdehnung von Chalkogenidschichten wird mit der Theorie der Bimetallplättchen diskutiert. Die Schichten werden auf Glimmersubstrate aufgebracht und die Biegung solcher Komposite während Temperaturerhöhung gemessen. Die Unterschiede zwischen AsS-, AsSe- und AsTe-Schichten und der Einfluß der Bestrahlung und Temperatur wird diskutiert.

This paper presents new results concerning the content of homopolar AsAs bonds in thin evaporated As2S3 films. Their concentration sharply decreases on annealing the thin films in Ar atmosphere and increases after illumination of the annealed films. Both refractive index and thickness change during these operations.

In this paper we discuss the possibility of utilizing chalcogenide systems for the formation of antireflection coatings for infrared filters. In the case of single layers evaporated onto germainum and silicon we used non-stoichiometric arsenic sulphide with excess of sulphur. For multiple anti-reflection coatings we may use combinations of polycrystalline and chalcogenide amorphous materials.

This paper describes a simple analytical method enabling the determination of the concentration of As-As bonds. We have proved that immediately after evaporation the samples contain at least 32% of As-As bonds from the total number of bonds by which arsenic is bound to its neighbourhood. Their content markedly decreases after annealing and illumination.

AbstractThe absorption of SnSe single crystal is studied near the absorption edge at 95 and 295 K in polarized light for ϵ |a and ϵ | b, where a and b are crystallographic axes within the cleavage plane. Two indirect transitions (0.907 and 1.01 eV at 295 K) are identified for both orientations and a first direct transition for ϵ | b with E0d = 1.051 eV and for ϵ | a with E1d = 1.236 eV as well, all at 295 K. The temperature coefficients of all transitions are determined also within the range of 95 to 295 K. Also is suggested the interpretation of these results considering the band structure of SnSe given in the literature.

The influence of indium on the optical and properties of As2−xTe3−xxIn2x, As20−xTe80−xIn2x and Ge20−xSe80−xIn2x is described. In Te-containing glasses the Fermi level is shifted by 0.05 eV and in Se-containing glasses by 0.2 eV towards the valence band.

physica status solidi (a)Volume 93, Issue 1 p. K55-K58 Short Note Refractive Index of As2−xSbxS3 and As2−xSbxSe3 Systems Z. Cimpl, Z. Cimpl University of Chemical Technology, Pardubice Search for more papers by this authorF. Kosek, F. Kosek University of Chemical Technology, Pardubice Search for more papers by this author Z. Cimpl, Z. Cimpl University of Chemical Technology, Pardubice Search for more papers by this authorF. Kosek, F. Kosek University of Chemical Technology, Pardubice Search for more papers by this author First published: 16 January 1986 https://doi.org/10.1002/pssa.2210930164Citations: 20 Leninovo nám. 565, 53210 Pardubice, Czechoslovakia. AboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Citing Literature Volume93, Issue116 January 1986Pages K55-K58 RelatedInformation

physica status solidi (a)Volume 88, Issue 2 p. K111-K113 Short Note Heterogeneity of evaporated As2S3 films Z. Cimpl, Z. Cimpl University of Chemical Teechnology, Pardubice Search for more papers by this authorF. Kosek, F. Kosek University of Chemical Teechnology, Pardubice Search for more papers by this authorJ. Janoš, J. Janoš University of Chemical Teechnology, Pardubice Search for more papers by this authorM. Mikhailov, M. Mikhailov University of Chemical Teechnology, Leningrad State University Search for more papers by this author Z. Cimpl, Z. Cimpl University of Chemical Teechnology, Pardubice Search for more papers by this authorF. Kosek, F. Kosek University of Chemical Teechnology, Pardubice Search for more papers by this authorJ. Janoš, J. Janoš University of Chemical Teechnology, Pardubice Search for more papers by this authorM. Mikhailov, M. Mikhailov University of Chemical Teechnology, Leningrad State University Search for more papers by this author First published: 16 April 1985 https://doi.org/10.1002/pssa.2210880244Citations: 3 Leninovo nám. 565, 532 10 Pardubice, Czechoslovakia. Sredny i prospekt 41-43, 199004 Leningrad, USSR. AboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onEmailFacebookTwitterLinkedInRedditWechat No abstract is available for this article. References 1 S. K. Keneman, J. Bordogna, and J. N. Zemel, J. Opt. Soc. Amer. 68, 32 (1978). 2 A. S. Pashinkin, A. D. Molodyk, V. I. Belousov, S. S. Stepchenko, and V. A. Fedorov, Izv. Akad. Nauk SSSR, Ser. neorg. Mater. 10, 1600 (1974). 3 U. Storm, and T. P. Martin, Solid State Commun. 29, 527 (1979). 4 T. J. Chen, J. N. Zemel, and I. Lauks, Rep. 182 AFOSR-TR-82-0120, Univ. Pennsylvania, Philadelphia (USA). 5 G. B. Street, and Z. A. Munir, J. inorg. nuclear Chem. 32, 3769 (1970). Citing Literature Volume88, Issue216 April 1985Pages K111-K113 ReferencesRelatedInformation

Some optical and electrical properties of the As2Se3−xTex system (0 ≤ x ≤ 0.15) have been studied. The value of the optical gap decreases from 1.74 eV to 1.59 eV. The slope of the absorption edge changes, so that value of Eo from the relation α ∼ exp (h̵ ωEo) exhibits a maximum value in neighbourhood of composition As2Se2.9Te0.1. The d.c. and a.c. conductivities have been studied. The value of the activation energy Eel ∼ 1.8 eV is almost unchanged up to x = 0.15. The a.c. conductivity fulfils the relation б(ω) ∼ ωs where s ≐ 1 and 1.1. at frequencies f < 1 kHz and f > 1 kHz respectively.

physica status solidi (b)Volume 121, Issue 1 p. K43-K45 Short Note A note on the Magnetic Susceptibility of Tetrahedral Semiconductors and Ionic Crystals L. N. Blinov, L. N. Blinov M.I. Kalinin Poltechnic Institute, Leningrad Search for more papers by this authorL. A. Baydakov, L. A. Baydakov M.I. Kalinin Poltechnic Institute, Leningrad Search for more papers by this authorZ. Cimpl, Z. Cimpl University of Chemical Technology, Pardubice Search for more papers by this authorF. Kosek, F. Kosek University of Chemical Technology, Pardubice Search for more papers by this author L. N. Blinov, L. N. Blinov M.I. Kalinin Poltechnic Institute, Leningrad Search for more papers by this authorL. A. Baydakov, L. A. Baydakov M.I. Kalinin Poltechnic Institute, Leningrad Search for more papers by this authorZ. Cimpl, Z. Cimpl University of Chemical Technology, Pardubice Search for more papers by this authorF. Kosek, F. Kosek University of Chemical Technology, Pardubice Search for more papers by this author First published: 1 January 1984 https://doi.org/10.1002/pssb.2221210156Citations: 2 Polytekhnicheskaya 20, 195251 Leningrad, USSR. Leninovo nám. 565, 53210 Pardubice, Czechoslovakia. AboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onFacebookTwitterLinked InRedditWechat Citing Literature Volume121, Issue11 January 1984Pages K43-K45 RelatedInformation

The concentration of As—As bonds in the AsS x system has been determined by chemical analysis. Over the whole range of composition examined, x = 1–1·61, a higher concentration of As—As bonds was found in comparison with the expected value. Under a simplifying assumption, i.e. that only three types of structural unit (AsS, AsS3/2 and AsS5/2) occur in the system, the molar concentration of all these units were deduced. It was found that the maximum concentration of the building units AsS3/2 at the stoichiometric composition did not reach 100%, and dropped with deviation from stoichiometry. This is in accord with the experimentally found variation of the refractive index with composition, and the existence of As—As bonds in sulphur-rich samples was confirmed by Raman spectroscopy. Apart from the excessive number of As—As bonds, due largely to the method of preparation, the composition dependence of the relative portion of these bonds may be understood from a simple analysis of bond statistics.

An investigation is made of the influence of the air-baking time on the physical properties of a CdSe layer, which is a part of the heterogeneous structure CdSe-As2Se3 used as a camera tube target. The I–U characteristics, C–U characteristics, the dependence of both the real and imaginary part admittance on frequency, and the photoconductance characteristics are measured. All measurements are carried out on heterostructures prepared with variable air-baking time of the CdSe layer: t = 0, 5, 15, 40, and 120 min. The results of measurements contribute to the finding of the optimal production procedure with a minimum baking time of tmin = 15 min. The heterostructures exhibit satisfactory properties. The dark current Id(U = 1 V, T = 300 K) = 10−10 Acm−2 with a rectification factor g(U = 10 V) = 106 and a capacitance C (2 kHz) = 2900 pFcm−2. Der zeitliche Einfluß der Temperung von CdSe-Schichten an Luft auf die physikalischen Eigen-schaften der Heterostruktur CdSe-As2Se3, die als Speicherelektrode in Fernsehaufnahmeröhren benutzt wird, wird untersucht. Es werden die I–U-Kennlinien, die C–U-Kennlinien, die Frequenz-abhängigkeit des realen und imaginären Anteils der Admittanz und die Spektralcharakteristiken der Photoleitfähigkeit gemessen. Alle Messungen werden an Heterostrukturen ausgeführt, deren CdSe Schichten während der Zeitintervalle t = 0, 5, 15, 40 und 120 min ausgeheizt werden. Die Meßergebnisse tragen dazu bei, den optimalen Herstellungsprozeß mit der minimalen Ausheizzeit tmin = 15 min zu bestimmen. Die Heterostrukturen weisen zufriedenstellende Eigenschaften auf. Der Dunkelstrom beträgt Id (U = 1 V, T = 300 K) = 10−10 Acm−2, der Gleichrichtungsfaktor g (U = 10 V) = 106 und die Kapazität C (2 kHz) = 2900 pFcm−2.