A 2D-simulation investigation determines the heavy ion failure mode of three different IGBT structures. The sensitivities of a N-channel IGBT, with and without n+ buffer and of a P-channel IGBT are compared in simulation.

Heavy ion induced destructive failures are reported in N-channel power IGBTs. For the first time, an experimental and 2D simulation investigation shows that latchup is involved in the triggering of the device.

Results obtained under heavy ion irradiation of one cell or different areas of a power MOSFET are presented. The observed responses confirm that the burnout current evolution depends on the impact localisation with respect to the cell and show that the sensitivity to burnout is variable over the transistor surface

2D MEDICI simulator is used to investigate hardening solutions to single-event burnout (SEE). SEE parametric dependencies such as carrier lifetime reduction, base enlargement, and emitter doping decrease have been verified and a p(+) plug modification approach for SEE hardening of power MOSFETs is validated with simulations on actual device structures.

The aim of the device radiation hardening is to reduce the sensitivity of components (military and space applications) to high energy radiations such as X, ¿ and cosmic rays. The main result of the irradiation being the creation of high density electron-hole pairs, time dependent radiation effects can only be simulated by including specific pair generation. This paper presents results for photocurrent induced by a X flash, for the latchup and burnout induced in MOS devices by heavy ions.

Triggering of Single Event Burnout (SEB) in Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) is studied by means of experiments and simulations based on real structures. Conditions for destructive and nondestructive events are investigated through current duration observations. The effect of the ion's impact position is experimentally pointed out. Finally, further investigation with 2D MEDICI simulations [1] show that die different regions of the MOSFET cell indeed exhibit different sensitivity with respect to burnout triggering.

Heavy-ion-induced effects on a power MOSFET cell are simulated with the 2D software MEDICI. The effect on single event burnout (SEB) sensitivity of several parameters (impact position, incidence angle, V DS bias voltage, LET of the incident particle, etc...) is analysed

The use of the 2D simulator MEDICI as a tool for Single Event Burnout (SEB) comprehension is investigated. Simulation results are compared to experimental currents induced in an N channel power MOSFET by the ions from a Cf-252 source. Current measurements have been carried out with a specially designed circuit. Simulations allow to analyze separately the effects of the ion impact and of the electrical environment parameters on the SEB phenomenon. Burnout sensitivity is found to be increased by increasing supply voltage, ion's LET and by decreasing load charge. These electrical tendencies are validated by experiments. Burnout sensitivity is also found to be sensitive to the ion impact position. The current shapes variations for given electrical parameters can be related to LET or ion impact position changes. However, some experimental current shapes are not reproduced by simulations.