We demonstrate a low-temperature (≤300°C), low loss deuterated SiNx – SiOy platform capable of dense optical routing (bend radii < 5 μm) at λ = 450 nm. This platform provides new opportunity for visible photonics requiring dense integration of both active and passive devices.

We measure TE and TM propagation loss of low temperature deuterated SiNx:D-SiOy:D waveguides at visible wavelength to establish design rules for scalable heterogeneous photonic integrated circuit platforms.

Crystal heterogeneous integration (CHI) is a technique that enables the direct (semiconductor-to-semiconductor) fusion of high-quality interfaces between both homogeneous and heterogeneous compound semiconductor materials without interposing adhesion layers. Uniquely, CHI enables the integration of hydride and metalorganic sources into the bonding ambient with the ability to independently control wafer contact, force, and temperature in the bonding process, providing the capability to overcome challenging materials integration issues for a wide range of compound semiconductors. We demonstrate the advantages of CHI for direct bonding GaN with both native GaN substrates and GaN films on heterogeneous substrates (Al2O3 and Si).

Deuterated silicon nitride (SiNx:D)–silicon oxide (SiOy:D) waveguides grown by low-temperature (300 °C) plasma-enhanced chemical vapor deposition (PECVD) operating in the violet (405 nm) to cyan (505 nm) visible spectrum are demonstrated. The waveguides exhibit low insertion losses ranging from 3.2 dB/cm (405 nm) to 0.8 dB/cm (505 nm). The performance of these waveguides is competitive to conventional SiNx waveguides that require significantly higher processing temperatures (≥800 °C). The low-temperature deposition and low loss of these waveguides enable advanced heterogeneous integration schemes for visible-spectrum photonic integrated circuits.

InGaN/GaN micro-light-emitting diodes with high bandwidths (2.6 GHz) at high temperatures (250C) are demonstrated. Recombination rate analysis is performed to understand the effects of radiative and non-radiative rates on modulation response at varying temperatures.

InGaN/GaN micro-light-emitting diodes with the highest bandwidths at very high temperatures (3.2 GHz at 290 degrees C) are demonstrated. Differential carrier lifetime analysis is undertaken to understand recombination-related effects on the modulation response.

III–V/III-nitride p–n junctions were realized via crystal heterogeneous integration, and the resulting diodes were characterized to analyze electrical behavior and junction quality. p-type In0.53Ga0.47As, which is a well-established base layer in InP heterojunction bipolar transistor (HBT) technology, was used in combination with a homoepitaxial n-type GaN. The latter offers low dislocation density, coupled with high critical electric field and saturation velocity, which are attractive for use in future HBT collector layers. Transmission electron microscopy confirms an abrupt interface in the fabricated heterogeneous diodes. Electrical characterization of the diodes reveals a near-unity ideality factor (n ∼ 1.07) up to 145 °C, a high rectification ratio of ∼108, and a low interface trap density of 3.7 × 1012 cm−2.

Gallium-nitride-based, blue micro-light-emitting diodes (micro-LEDs) with electro-optical -3 dB modulation bandwidths of 3.73 GHz at 11 kA/cm(2 )at room temperature and 4.00 GHz at 9 kA/cm(2) at 200 degrees C are reported. These bandwidths are the highest reported thus far for micro-LEDs. The micro-LEDs operate at high temperatures, up to 400 degrees C, and bandwidths improve with increased temperatures. The lifetimes and recombination rates of the micro-LEDs active layer are determined by measuring and analyzing the impedance, modulation response, and radiative efficiency. This analysis shows increasing bandwidths with increasing current density and temperature resulting from dominant non-radiative lifetimes.

We present a monolithic InP-based photonic integrated circuit (PIC) consisting of a widely tunable laser master oscillator feeding an array of integrated semiconductor optical amplifiers that are interferometrically combined on-chip in a single-mode waveguide. We demonstrate a stable and efficient on-chip coherent beam combination and obtain up to 240 mW average power from the monolithic PIC, with 30-50 kHz Schawlow-Townes linewidths and >180 mW average power across the extended C-band. We also explored hybrid integration of the InP-based laser and amplifier array PIC with a high quality factor silicon nitride microring resonator. We observe lasing based on gain from the interferometrically combined amplifier array in an external cavity formed via feedback from the silicon nitride microresonator chip; this configuration results in narrowing of the Schawlow-Townes linewidth to ∼3 kHz with 37.9 mW average power at the SiN output facet. This work demonstrates a new approach toward high power, narrow linewidth sources that can be integrated with on-chip single-mode waveguide platforms for potential applications in nonlinear integrated photonics.

A novel optical frequency division technique, called regenerative harmonic injection locking, is used to transfer the timing stability of an optical frequency comb with a repetition rate in the millimeter wave range (∼300GHz) to a chip-scale mode-locked laser with a ∼10GHz repetition rate. By doing so, the 300 GHz optical frequency comb is optically divided by a factor of 30× to 10 GHz. The stability of the mode-locked laser after regenerative harmonic injection locking is ∼10-12 at 1 s with a 1/τ trend. To facilitate optical frequency division, a coupled opto-electronic oscillator is implemented to assist the injection locking process. This technique is exceptionally power efficient, as it uses less than 100µW of optical power to achieve stable locking.

We present a 1.6Tbps coherent transceiver delivering 800Gbps/wave transmission using integrated Tx/Rx functions with 50GHz bandwidth and 50kHz linewidth tunable lasers on a single 2-channel InP PIC, paired with a SiGe Driver and TIA ASIC.

Vertical optimization of DSP algorithms, analog electronics, optical components and PCB design is critical to maximize the SNR limit of the digital coherent MODEM. We demonstrate a record net ISD of 10.82b/s/Hz for a vertically optimized 256QAM transceiver operating at a symbol rate >50GBd.

A mmWave optical frequency comb with a repetition rate of ~300GHz is synchronized to a MLL with a repetition rate of ~10GHz via harmonic injection locking using <; 70μW of locking power. The master laser is locked to a 30k Finesse etalon via PDH frequency stabilization.

We present a novel photonic integrated circuit (PIC) that monolithically integrates a racetrack colliding-pulse mode-locked laser with a pulse-picking electro-absorption modulator and a semiconductor optical amplifier on Indium Phosphide. We present detailed characterization of this PIC that includes optical pulse characterization, phase noise and long term stability under passive and hybrid mode-locking conditions. Allan deviation measurements made on the optical pulse train from the PIC show a fractional frequency instability of 8 x 10(-11) at 1 second and follow a 1/tau trend. We also demonstrate repetition rate reduction from similar to 10 GHz to similar to 500 MHz with an extinction ratio of similar to 14.65 dB using an on-chip pulse-picking electro-absorption modulator.

A mm-Wave frequency comb with 240GHz spacing is synchronized to a MLL-PIC using harmonic injection locking, this represent optical frequency division of 24x. The Allan Deviation on the repetition rate stability is 10(-10) at 1s.

Thanks to the successful application of Si-based photonic integrated circuits (PICs) to data communications, demand for PICs has increased dramatically. As a result, integrated device manufacturers (IDMs), as well as foundries, have provided much improved capability and capacity since 2010. PIC foundries, in particular, offer capability that is accessible to users around the world and in a variety of technology platforms. This chapter is meant to teach the community what has advanced in the past decade to enable a suite of processes for different types of PICs, typically dedicated to a particular market demand. The chapter is not meant to describe the operation of a specific foundry, but rather, a vision of PIC foundries with examples from different institutions. After reading the chapter, the reader should have a better understanding of the advances that have enabled PIC foundry capabilities and the background to be able to interact with a PIC foundry.

We review the state-of-the-art in monolithic-integrated InP-based system-on-chip (SOC) photonic integrated circuits (PICs) and the extension of this capability to a foundry offering. The learnings and best practices embodied in the design and fabrication capability of commercially deployed monolithically integrated coherent optical communication SOC are leveraged to develop an optimized and scalable integration platform for a turnkey foundry process. The design automation and infrastructure required to enable a consistent reproducible InP-based foundry offering is summarized.

A state-of-the-art process design kit for an InP photonic integrated circuit foundry using electronic photonic design automation environment is discussed. Automated design tools are used to design PICs using data-driven models.

We present monolithically integrated multi-channel coherent L-band transmitter (Tx) and receiver (Rx) photonic integrated circuits (PICs) on InP substrates. The L-band PICs are able to provide post-forward error correction (FEC), error-free operation for dual-polarization (DP) 16-QAM coherent transmission at 33 Gbaud. These transceivers operate at 200 Gbps per channel and support 1.2 Tbps aggregate capacity per 6 channel PIC. We also demonstrate in this work a C + L band communication system with two C-band superchannels (2 x 6λ) and three L-band superchannels (3 x 6λ) over a 600 km link. The received signals all have Q > 7.7 dB, which is well above the error-free threshold of the FEC used in this work.