The temperature coefficient of resistance (TCR) is a fundamental material property. Semiconductors with a high TCR are promising for high-resolution thermal imaging in autonomous systems, precision temperature sensing and neuromorphic computing. However, near room temperature, the TCR of conventional thermal imaging materials, such as vanadium oxide and amorphous silicon, typically remains below 5% per kelvin. Here we demonstrate a voltage-tunable TCR of up to 150% per kelvin near 300 K in a two-terminal InP/InGaAs n–p–n transistor, enabled by an internal coherent carrier-feedback mechanism. Current amplification in this device arises from the interplay between temperature-dependent transistor gain and avalanche multiplication, thus forming a regenerative loop that produces a large, bias-tunable TCR. These results illustrate how device-level engineering can exceed the intrinsic material limits on temperature sensitivity and highlight the importance of developing biasing-circuit architectures to fully exploit this capability. A single InP/InGaAs transistor exploits carrier-feedback amplification to achieve a voltage-tunable temperature coefficient of resistance exceeding the limits of conventional materials.

The advent of 2D materials has revolutionized condensed matter physics and materials science, offering unprecedented opportunities to explore exotic physical phenomena, engineer novel functionalities, and address critical technological challenges across diverse fields. Over the past two decades, the exploration of 2D materials has expanded beyond graphene, encompassing a vast library of atomically thin crystals and their heterostructures. These materials exhibit extraordinary electronic, optical, thermal, mechanical, and chemical properties, and hold promise for breakthroughs in electronics, optoelectronics, quantum technologies, energy storage, catalysis, thermal management, filtration and separation, and beyond. Many exciting new physics and phenomena continue to emerge, while select 2D materials, such as graphene, h-BN, and the semiconducting transition metal dichalcogenides (TMDCs), are transitioning from laboratory-scale demonstrations to industrial applications. In this context, a holistic understanding of synthesis, structure-property relationships, integration, and performance optimization is essential. This roadmap reviews the multifaceted challenges and opportunities in 2D materials research, focusing on the synthesis, properties and applications of representative systems including graphene and its derivatives, TMDCs, MXenes as well as their heterostructures and moiré systems.

Phonon polaritons are quasiparticles resulting from the coherent coupling of photons with optical phonons in polar dielectrics1. Owing to their exceptional ability to confine electric fields to deep-subwavelength scales with low loss, they are uniquely poised to enable a suite of applications beyond the reach of conventional photonics, such as subdiffraction imaging2 and near-field energy transfer3-5. The conventional approach to exciting phonon polaritons through optical methods, however, involves costly light sources along with near-field schemes6,7, and generally leads to low excitation efficiency owing to substantial momentum mismatch between phonon polaritons and free-space photons. Here we demonstrate that under proper conditions, phonon polaritons can be excited all-electrically by drifting charge carriers. Specifically, in hexagonal boron nitride (hBN)/graphene heterostructures, by electrically driving charge carriers in ultrahigh-mobility graphene out of equilibrium, we observe bright electroluminescence of hBN's hyperbolic phonon polaritons (HPhPs) at mid-infrared frequencies, which shows a temperature and carrier density dependence distinct from black-body thermal emission. Moreover, the carrier density dependence of the HPhP electroluminescence spectra reveals that HPhP electroluminescence can arise from both interband transition and intraband Cherenkov radiation8 of charge carriers in graphene. The HPhP electroluminescence offers avenues for realizing electrically pumped mid-infrared and terahertz phonon-polariton light sources.

Over the past two decades, 2D materials have rapidly evolved into a diverse and expanding family of material platforms. Many members of this materials class have demonstrated their potential to deliver transformative impact on fundamental research and technological applications across different fields. In this roadmap, we provide an overview of the key aspects of 2D material research and development, spanning synthesis, properties and commercial applications. We specifically present roadmaps for high impact 2D materials, including graphene and its derivatives, transition metal dichalcogenides, MXenes as well as their heterostructures and moiré systems. The discussions are organized into thematic sections covering emerging research areas (e.g., twisted electronics, moiré nano-optoelectronics, polaritronics, quantum photonics, and neuromorphic computing), breakthrough applications in key technologies (e.g., 2D transistors, energy storage, electrocatalysis, filtration and separation, thermal management, flexible electronics, sensing, electromagnetic interference shielding, and composites) and other important topics (computational discovery of novel materials, commercialization and standardization). This roadmap focuses on the current research landscape, future challenges and scientific and technological advances required to address, with the intent to provide useful references for promoting the development of 2D materials.

Triggered by the development of exfoliation and the identification of a wide range of extraordinary physical properties in self-standing films consisting of one or few atomic layers, two-dimensional (2D) materials such as graphene, transition metal dichalcogenides (TMDs), and other van der Waals (vdW) crystals currently constitute a wide research field protruding in multiple directions in combination with layer stacking and twisting, nanofabrication, surface-science methods, and integration into nanostructured environments. Photonics encompasses a multidisciplinary collection of those directions, where 2D materials contribute with polaritons of unique characteristics such as strong spatial confinement, large optical-field enhancement, long lifetimes, high sensitivity to external stimuli (e.g., electric and magnetic fields, heating, and strain), a broad spectral range from the far infrared to the ultraviolet, and hybridization with spin and momentum textures of electronic band structures. The explosion of photonics with 2D materials as a vibrant research area is producing breakthroughs, including the discovery and design of new materials and metasurfaces with unprecedented properties as well as applications in integrated photonics, light emission, optical sensing, and exciting prospects for applications in quantum information, and nanoscale thermal transport. This Roadmap summarizes the state of the art in the field, identifies challenges and opportunities, and discusses future goals and how to meet them through a wide collection of topical sections prepared by leading practitioners.

In optoelectronics, achieving electrical reconfigurability is crucial as it enables the encoding, decoding, manipulating, and processing of information carried by light. In recent years, two-dimensional van der Waals (2-D vdW) materials have emerged as promising platforms for realizing reconfigurable optoelectronic devices. Compared to materials with bulk crystalline lattice, 2-D vdW materials offer superior electrical reconfigurability due to high surface-to-volume ratio, quantum confinement, reduced dielectric screening effect, and strong dipole resonances. Additionally, their unique band structures and associated topology and quantum geometry provide novel tuning capabilities. This review article seeks to establish a connection between the fundamental physics underlying reconfigurable optoelectronics in 2-D materials and their burgeoning applications in intelligent optoelectronics. We first survey various electrically reconfigurable properties of 2-D vdW materials and the underlying tuning mechanisms. Then we highlight the emerging applications of such devices, including dynamic intensity, phase and polarization control, and intelligent sensing. Finally, we discuss the opportunities for future advancements in this field.

The temperature coefficient of resistance (TCR) is one of the most fundamental properties of a material. Semiconductor materials exhibiting high TCR are promising candidates for applications in high-resolution thermal imaging for autonomous systems, high-precision temperature sensing, and neuromorphic computing. However, the TCR magnitude is typically below 5

Mid-infrared (mid-IR) photodetection is important for various applications, including biomedical diagnostics, security, chemical identification, and free-spacing optical communications. However, conventional “photon” mid-IR photodetectors require liquid nitrogen cooling (i.e., MCT). Furthermore, acquiring mid-IR spectra usually involves a complex and expensive Fourier Transform Infrared spectrometer, a tabletop instrument consisting of a meter-long interferometer and MCT detectors, which is not suitable for mobile and compact device applications. In this work, we present tunable photoresponsivity in the mid-IR wavelength in palladium diselenide (PdSe 2 ) – molybdenum disulfide (MoS 2 ) heterostructure field-effect transistors (FETs), operating at room temperature. Furthermore, we applied a tunable membrane cavity to modulate the Fabry–Pérot resonance to modulate the absorption spectrum of the device layer. We used a robust polyetherimide (PEI) membrane with CVD-grown graphene to electrically tune the membrane structure. For the next step, we will integrate the PdSe 2 -based photodetector and tunable membrane to increase detection sensitivity and spectrum tunability to realize the ‘learning’-based spectroscopy.

The unique physics in moiré superlattices of twisted or lattice-mismatched atomic layers holds great promise for future quantum technologies. However, twisted configurations are thermodynamically unfavourable, making accurate twist angle control during growth implausible. While rotationally aligned, lattice-mismatched moirés such as WSe 2 /WS 2 can be synthesized, they lack the critical moiré period tunability, and their formation mechanisms are not well understood. Here, we report the thermodynamically driven van der Waals epitaxy of moirés with a tunable period from 10 to 45 nanometres, using lattice mismatch engineering in two WSSe layers with adjustable chalcogen ratios. Contrary to conventional epitaxy, where lattice-mismatch-induced stress hinders high-quality growth, we reveal the key role of bulk stress in moiré formation and its unique interplay with edge stress in shaping the moiré growth modes. Moreover, the superlattices display tunable interlayer excitons and moiré intralayer excitons. Our studies unveil the epitaxial science of moiré synthesis and lay the foundations for moiré-based technologies.

Computational spectrometry is an emerging field that uses photodetection in conjunction with numerical algorithms for spectroscopic measurements. Compact single photodetectors made from layered materials are particularly attractive since they eliminate the need for bulky mechanical and optical components used in traditional spectrometers and can easily be engineered as heterostructures to optimize device performance. However, such photodetectors are typically nonlinear devices, which adds complexity to extracting optical spectra from their response. Here, we train an artificial neural network to recover the full nonlinear spectral photoresponse of a single GeSe-InSe p-n heterojunction device. The device has a spectral range of 400 to 1100 nm, a small footprint of ~25 × 25 square micrometers, and a mean reconstruction error of 2 × 10 −4 for the power spectrum at 0.35 nanometers. Using our device, we demonstrate a solution to metamerism, an apparent matching of colors with different power spectral distributions, which is a fundamental problem in optical imaging.

A compact on-chip polarimeter can be created using subpixels made from metasurface photodetectors and a machine learning algorithm.

Silicon photonic circuits offer a promising solution for the interconnect bottleneck for advanced computing systems, but they typically require additional materials, such as germanium for photodetection. An all-silicon receiver capable of handling a data stream at 1.28 terabits per second is paving the way for future optical interconnects.

We report the fabrication and characteristics of native oxides-interfaced heterovalent GaAs/Ge np heterojunction diodes. The native oxides (GaAs)xOy and GexOy were intentionally created as a passivation layer for single crystal GaAs surface and single crystal Ge surface via exposing the p-type Ge ( 2x10(19) cm (-3)) substrate and the released n-type GaAs ( 2x10(18) cm (-3)) layer in air for different time lengths. X-ray photoelectron spectroscopy (XPS) confirmed the formation of these oxides and their content variations with the oxidation time lengths. The surface oxidized GaAs and Ge were then put together via chemical bonding with careful consideration of the thermal budget such that atomic inter-diffusion between Ge and GaAs do not occur. The measured current-voltage characteristics of the diodes with different oxidation times were compared showing that the 2-hour air oxidation displays the optimal diode characteristics. This work supports the semiconductor grafting concept where interface passivation is necessary to form high-performance pn abrupt heterojunctions between two single crystalline semiconductors and may provide useful guidance for future applications employing GaAs/Ge heterojunctions.

Phonon-polaritons are electromagnetic waves resulting from the coherent coupling of photons with optical phonons in polar dielectrics. Due to their exceptional ability to confine electric fields to deep subwavelength scales with low loss, they are uniquely poised to enable a suite of applications beyond the reach of conventional photonics, such as sub-diffraction imaging and near-field energy transfer. The conventional approach to exciting phonon-polaritons through optical methods, however, necessitates costly mid-infrared and terahertz coherent light sources along with near-field scanning probes, and generally leads to low excitation efficiency due to the substantial momentum mismatch between phonon-polaritons and free-space photons. Here, we demonstrate that under proper conditions, phonon-polaritons can be excited all-electrically by flowing charge carriers. Specifically, in hexagonal boron nitride (hBN)/graphene heterostructures, by electrically driving charge carriers in ultra-high-mobility graphene out of equilibrium, we observe bright electroluminescence of hBN's hyperbolic phonon-polaritons (HPhPs) at mid-IR frequencies. The HPhP electroluminescence shows a temperature and carrier density dependence distinct from black-body or super-Planckian thermal emission. Moreover, the carrier density dependence of HPhP electroluminescence spectra reveals that HPhP electroluminescence can arise from both inter-band transition and intra-band Cherenkov radiation of charge carriers in graphene. The HPhP electroluminescence offers fundamentally new avenues for realizing electrically-pumped, tunable mid-IR and THz phonon-polariton lasers, and efficient cooling of electronic devices.

Geometry, an ancient yet vibrant branch of mathematics, has important and far-reaching impacts on various disciplines such as art, science, and engineering. Here, we introduce an emerging concept dubbed "geometric deep optical sensing" that is based on a number of recent demonstrations in advanced optical sensing and imaging, in which a reconfigurable sensor (or an array thereof) can directly decipher the rich information of an unknown incident light beam, including its intensity, spectrum, polarization, spatial features, and possibly angular momentum. We present the physical, mathematical, and engineering foundations of this concept, with particular emphases on the roles of classical and quantum geometry and deep neural networks. Furthermore, we discuss the new opportunities that this emerging scheme can enable and the challenges associated with future developments.

large-angle twist between two bilayer graphene films makes a sensitive and broadband infrared–terahertz detector as a result of interlayer screening and a crystal field-induced bandgap.

Two-dimensional (2D) transition metal chalcogenides (TMDs) have drawn significant attention in recent year s due to their extraordinary optical and electronic properties. As heat transfer plays an important role in device performance, various methods such as optothermal Raman spectroscopy and time-domain thermoreflectance have been developed to measure the thermal conduct i v i t y and interfacial thermal conductance in 2D van der Waals (vdW) heterostructures. Here, we employ the vibrational-pump-visible-probe (VPVP) spectroscopy to directly visualize the heat transfer process in a heterostructure of multilayer h-BN and monolayer WS2. Following an impulsive vibrational excitation of h-BN in the mid-infrared, we probe the heat transfer from h-BN through WS2 and finally to the substrate from the subpicosecond to the submicrosecond timescale. The interfacial thermal conductance of the h-BN/WS2 and WS2/SiO2 interfaces is obtained by corroborating the experiments with heat transfer calculations based on the Fourier's law of heat conduction. Our study demonstrates an alternative, time-resolved optical method to measure cross-plane heat dissipation and opens up a new pathway to investigate the interlayer electron-phonon and phonon-phonon interactions in v d W heterostructures.

Optical spectroscopy the measurement of electromagnetic spectra is fundamental to various scientific domains and serves as the building block of numerous technologies. Computational spectrometry is an emerging field that employs an array of photodetectors with different spectral responses or a single photodetector device with tunable spectral response, in conjunction with numerical algorithms, for spectroscopic measurements. Compact single photodetectors made from layered materials are particularly attractive, since they eliminate the need for bulky mechanical and optical components used in traditional spectrometers and can easily be engineered as heterostructures to optimize device performance. However, compact tunable photodetectors are typically nonlinear devices and this adds complexity to extracting optical spectra from the device response. Here, we report on the training of an artificial neural network (ANN) to recover the full nonlinear spectral photoresponse of a nonlinear problem of high dimensionality of a single GeSe-InSe p-n heterojunction device. We demonstrate the functionality of a calibrated spectrometer in the spectral range of 400-1100 nm, with a small device footprint of ~25X25 micrometers, and we achieve a mean reconstruction error of 0.0002 for the power-spectrum at a spectral resolution of 0.35 nm. Using our device, we demonstrate a solution to metamerism, an apparent matching of colors with different power spectral distributions, which is a fundamental problem in optical imaging.

Twisted bilayer graphene (t-BLG) has recently been introduced as a rich physical platform displaying flat electronic bands, strongly correlated states, and unconventional superconductivity. Studies have hinted at an unusual Z2 topology of the moiré Dirac bands of t-BLG. However, direct experimental evidence of this moiré band topology and associated edge states is still lacking. Herein, using superconducting quantum interferometry, we reconstructed the spatial supercurrent distribution in t-BLG Josephson junctions and revealed the presence of edge states located in the superlattice band gaps. The absence of edge conduction in high resistance regions just outside the superlattice band gap confirms that the edge transport originates from the filling of electronic states located inside the band gap and further allows us to exclude several other edge conduction mechanisms. These results confirm the unusual moiré band topology of twisted bilayer graphene and will stimulate further research to explore its consequences.

Two-dimensional organic-inorganic hybrid perovskites (2DHPs) are natural quantum-well-like materials, in which strong quantum and dielectric confinement effects due to the organic spacers give rise to tightly bound excitons with large binding energy. To examine the mutual interactions between the organic spacer cations and the inorganic charge-residing octahedral framework in 2DHPs, here we perform femtosecond pump-probe spectroscopy by direct vibrational pumping of the organic spacers, followed by a visible-to-ultraviolet probe covering their excitonic resonances. Measurements on prototypical lead-bromide based 2DHP compounds, (BA)_{2}PbBr_{4} and (BA)_{2}(FA)Pb_{2}Br_{7} (BA^{+}=butylammonium; FA^{+}=formamidinium), reveal two distinct regimes of the temporal response. The first regime is dominated by a pump-induced transient expansion of the organic spacer layers that reduces the exciton oscillator strength, whereas the second regime arises from pump-induced lattice heating effects primarily associated with a spectral shift of the exciton energy. In addition, vibrational excitation enhances the biexciton emission, which we attribute to a stronger intralayer exciton confinement as well as vibrationally induced exciton detrapping from defect states. Our study provides fundamental insights regarding the impact of organic spacers on excitons in 2DHPs, as well as the excited-state dynamics and vibrational energy dissipation in these structurally diverse materials.