We present our hybrid InP to SiN TriPleX integration interface with a novel alignment technique and its application to complex photonic integrated circuits. The integration interface comprises vertical alignment stops, which simplify the alignment process and allow for array integration with the same simplicity as for single dies. Horizontal alignment is carried out by utilizing optical backscatter reflectometry to get an active feedback signal without the need to operate the chip. Thus, typical contacting limitations of active flip-chip alignment are overcome. By using this method, we demonstrate the integration of InP DFB lasers with more than 60 mW of optical power coupled to a SiN waveguide with an averaged coupling loss of -2.1 dB. The hybrid integration process is demonstrated for single dies as well as full arrays. We evaluate the feasibility of the assembly process for complex photonic integrated circuits by integrating an InP gain chip to a SiN TriPleX external cavity. The process proves to be well suited and allows monitoring chip quality during assembly. A fully functional hybrid integrated tunable laser is fabricated, which is capable of full C-band tuning with optical output power of up to 60 mW.

We present an interface for hybrid flip-chip integration of InP-based laser sources to silicon-nitride-based photonic platforms. The design enables efficient high optical power coupling over a wide temperature range. The optical modes of laser and SiN chip are expanded using integrated tapers allowing for high alignment tolerance. The chips comprise physical alignment stops for vertical alignment. In the horizontal direction, the integration interface is optimized for active and/or visual alignment with high precision using precise visual alignment marks. The hybrid integrated chip shows a waveguide coupled optical power of more than 40 mW and can operate at elevated temperatures up to 85 degrees C.

We present our hybrid III-V/SiN integration interface with a novel active alignment technique overcoming contacting limitations in flip-chip assembly. The interface allows for integration of single chips and full arrays. An average coupling loss of −2.1dB and a record coupled power exceeding 60mW is achieved.

This paper proposes and tests a design of electro-thermal bimorph actuators for alignment of flexible photonic waveguides fabricated in 16 µm thick SiO2. The actuators are for use in a novel alignment concept for multi-port photonic integrated circuits (PICs), in which the fine alignment is taken care of by positioning of suspended, mechanically flexible waveguide beams on one or more of the PICs. The design parameters of the bimorph actuator allow to tune both the initial relative position of the waveguide end-facets, and the motion range of the actuators. Bimorph actuators have been fabricated and characterized. The maximum out-of-plane deflection of the bimorph actuator (with 720 μm-long poly-Si) can reach 18:5 μm with 126:42mW, sufficient for the proposed application.

Fully automated, high precision, cost-effective assembly technology for photonic packages remains one of the main challenges in photonic component manufacturing. Next to the cost aspect the most demanding assembly task for multiport photonic integrated circuits (PICs) is the high-precision (±0.1 μm) alignment and fixing required for optical I/O in InP PICs, even with waveguide spot size conversion. In a European research initiative – PHASTFlex - we develop and investigate an innovative, novel assembly concept, in which the waveguides in a matching TriPleX interposer PIC are released during fabrication to make them movable. After assembly of both chips by flip-chip bonding on a common carrier, TriPleX based actuators and clamping functions position and fix the flexible waveguides with the required accuracy.

In this paper we demonstrate a compact ready-to-use micro Coriolis mass flow meter. The full scale flow is 1 g/h (for water at a pressure drop < 1 bar). It has a zero stability of 2 mg/h and an accuracy of 0.5% reading for both liquids and gases. The temperature drift between 10 and 50 °C is below 1 mg/h/°C. The meter is robust, has standard fluidic connections and can be read out by means of a PC or laptop via USB. Its performance was tested for several common gases (hydrogen, helium, nitrogen, argon and air) and liquids (water and isopropanol). As in all Coriolis mass flow meters, the meter is also able to measure the actual density of the medium flowing through the tube. The sensitivity of the measured density is ~1 Hz.m3/kg.

MAPPER Lithography is developing a maskless lithography technology based on massively-parallel electron-beam writing in combination with high speed optical data transport for switching the electron beams. With 13,000 electron beams each delivering a current of 13nA on the wafer, a throughput of 10 wph is realized for 22nm node lithography([1]). By clustering several of these systems together high throughputs can be realized in a small footprint. This enables a highly cost-competitive alternative to double patterning and EUV.The most mature and reliable electron source currently available that combines a high brightness, a high emission current and uniform emission is the dispenser cathode. For this electron source a reduced brightness of 10(6) A/m(2)SrV has been measured, with no restrictions on emission current([2]). With this brightness however it is possible to realize a beam current of 0.3nA (@ 25nm spotsize), which is almost a factor 50 lower than the 13nA that is required for 10 wph.Three methods can be distinguished to increase the throughput:1. Use an electron source with a 50x higher brightness2. Increase the number of beams and lenses 50x3. Patterned beams: Image multiple sub-beams with each projection lensMAPPER has selected option 3) 'Patterned beams' as the method to increase the beam current to 13nA. This because an electron source with a 50x higher brightness is simply not available at this time, and increasing the number of beams and lenses 50x leads to undesirable engineering issues.During the past years MAPPER has been developing the concept of 'Patterned beams'. By imaging 7x7 sub-beams per projection lens the beam current is increased to the required 13nA level. This technique will also be used to maintain throughput at 10 wph for smaller technology nodes by further increasing the number of sub-beams per projection lens.In this paper we will describe the electron optical design used to image these multiple sub-beams per lens, as well as experimental demonstration of this electron optical configuration. Also the writing strategy will be discussed, as well as the first patterning results. One of the key components for 'Patterned beams' is the beam blanker array, since each sub-beam must be switched on and off individually. The design of the blanker deflectors, the circuitry, as well as experimental results of the blanker array will be shown. Finally the roadmap to further technology nodes will be discussed.

In single charged particle beam column the alignment is obtained either by mechanical shift of the lenses or by XY alignment deflectors. The problem in multi beam array systems is that it is only possible to deflect the array of beams in the XY direction and not able to correct for a possible rotation errors between arrays blocks. A new concept is presented here that can electro statically align multi beam array systems.

We have investigated the effects of modification of the SrTiO3/Co interface as well as the SrTiO3 barrier on the tunnel magnetoresistance TMR of La0.67Sr0.33MnO3/SrTiO3/Co junctions. Modification was realized by the introduction of one atomic layer of either TiO2 or SrO at the SrTiO3/Co interface. Barriers with different oxygen content were also studied. In these structures we have observed positive as well as negative TMR, with a trend towards positive TMR for junctions with interfacial SrO and/or more oxygen-deficient barriers. This work offers more insight into the SrTiO3/Co tunnel spin polarization and its sign.

We have investigated the effects of modification of the SrTiO3/Co interface as well as the SrTiO3 barrier on the tunnel magnetoresistance (TMR) of La0.67Sr0.33MnO3/SrTiO3/Co junctions. Modification was realized by the introduction of one atomic layer of either TiO2 or SrO at the SrTiO3/Co interface. Barriers with different oxygen content were also studied. In these structures we have observed positive as well as negative TMR, with a trend towards positive TMR for junctions with interfacial SrO and/or more oxygen-deficient barriers. This work offers more insight into the SrTiO3/Co tunnel spin polarization and its sign.

The magnetic anisotropy of epitaxial La0.67Sr0.33MnO3 (LSMO) thin films on vicinal, TiO2-terminated SrTiO3 substrates is investigated. Atomic force microscopy shows a regular step-terrace structure on the LSMO surface which is a replication of the surface of the substrate. The films show in-plane uniaxial magnetic anisotropy at room temperature, with the easy axis along the step direction. At low temperature the films show biaxial crystalline anisotropy with easy axes along [110], and hard axes along the [100] direction of LSMO.

The magnetic anisotropy of epitaxial La0.67Sr0.33MnO3 (LSMO) thin films on vicinal, TiO2-terminated SrTiO3 substrates is investigated. Atomic force microscopy shows a regular step-terrace structure on the LSMO surface which is a replication of the surface of the substrate. The films show in-plane uniaxial magnetic anisotropy at room temperature, with the easy axis along the step direction. At low temperature the films show biaxial crystalline anisotropy with easy axes along [110], and hard axes along the [100] direction of LSMO.

The aim of the work presented in this thesis is to fabricate an epitaxial magnetic tunnel transistor (MTT) consisting of a Niobium doped SrTiO3 collector, a La0.67Sr0.33MnO3 base, a SrTiO3 tunnel barrier and a Co emitter. The motivation is that this device is sensitive to the spin dependent scattering of hot electrons in a half-metallic ferromagnet. Further we anticipate that the high crystalline quality of the base will result in a large hot electron transmission.

In a recent letter, it was reported that a magnetic tunnel transistor (MTT) with a spin-valve base can exhibit high magnetocurrent (MC) as well as output collector current in the microampere regime. While the presented experimental results are sound and unambiguous, the comparison with the spin-valve transistor (SVT) is not. In this comment, we wish to address this by separately comparing the output current, transfer ratio, and MC of both devices.

We report on the fabrication and electrical characterization of epitaxial Schottky diodes of a half-metallic ferromagnet on an oxide semiconductor. La0.67Sr0.33MnO3 thin films are grown by pulsed laser deposition on niobium-doped SrTiO3 semiconductor substrates with two doping concentrations and a TiO2 surface termination. The current across the diodes is dominated by thermionic emission and shows high rectification and low reverse bias leakage. At room temperature, the Schottky barrier height is 0.95 eV (0.65 eV) and the ideality factor is 1.08 (1.18) for the diodes with a low (high) doped semiconductor. With decreasing temperature the Schottky barrier height decreases and the ideality factor increases.

The electrical characteristics of silicon-based spin-valve transistors are reported, focusing on how the output current and magnetocurrent depend on the magnitude of the emitter current. Transistors with a different combination of Schottky barriers (Si/Au and Si/Cu) were used. The collector current rapidly increases with emitter current, without significant loss of magnetocurrent. Spin-valve transistors with magnetocurrent around 400% and high output current up to 40 μA are obtained.