This paper explores the significance of inorganic semiconductor zinc oxide (ZnO) nanoparticles (NPs) in enhancing the microelectronic of a semiconducting polymer polyaniline (PANI) for its applications in heterojunction devices. The hybrid PANI-ZnO nanocomposite (NC) possesses both characteristics of the conducting polymer PANI as well as the inorganic ZnO NPs. The Ag/PANI-ZnO/TiO2/n-Si heterojunction device is fabricated via simple spin coating technique by depositing a thin layer of PANI-ZnO NC on pre-deposited TiO2 layer/n-silicon (n-Si) substrate. TiO2 acts as buffer layer between n-Si and PANI-ZnO NC films to facilitate electron transport at the interface. To study microelectronic properties of the fabricated Ag/PANI-ZnO/TiO2/n-Si heterojunction, current-voltage (I-V) characteristics are carried out at 300 K in dark conditions (0 lux). The dark I-V curves of the device show asymmetric behavior with a rectification ratio (RR) of 193 at +/- 2.5 V that testifies the formation of heterojunction device. The governing interface parameters of the device such as series resistance (Rs), shunt resistance (Rsh), ideality factor (n), charge carrier mobility (mu) and barrier height (phi b) are measured by conventional I-V method to investigate the interface properties of the heterojunction based on PANI-ZnO NC. Results obtained show that the application of ZnO NPs enhances the microelectronic characteristics of the device as compared to stand-alone polymer devices. The measured device parameters are verified by the Cheungs' functions and charge carriers' conduction mechanism is probed by Mott-Gurney model. Structural, optical bandgap and morphological features of PANI-ZnO NC are investigated by X-ray diffraction (XRD), ultraviolet-visible (UV-vis) spectroscopy and scanning electron microscopy (SEM) as well as atomic force microscopy (AFM). The heterojunction device is fabricated via simple spin coating technique.Microelectronic properties of the device are studied via current-voltage response.The key interface parameters of the device are measured by conventional I-V method.The measured parameters are verified by the Cheungs' and Mott-Gurney model.Various features of blend PANI-ZnO NC are investigated using XRD, UV-vis, and AFM.

This paper explores the potential application of titanium dioxide ( TiO_2 ) nanoparticles (NPs) to enhance the performance of Schottky barrier diode (SBD) made from vanadyl 2, 9, 16, 23-tetraphenoxy-29H, 31H-Phthalocyanine (VOPcPhO), a small-molecule organic semiconductor. The SBD is fabricated using a facile spin coating technique at ambient conditions by casting a 1:1 vol TiO_2 NPs in chloroform on pre-deposited Poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) on an indium tin oxide (ITO) substrate. To analyze the electronic properties of the fabricated device, current–voltage ( I-V ) measurements are performed at 25 ^∘ C in dark conditions. The I-V characteristics of SBD displayed asymmetrical behavior with rectification ratio (RR) of 261 at ± 2.1 V for ITO/PEDOT:PSS/VOPcPhO– TiO_2 /Ag device which indicates the formation of a depletion region. Key electronic parameters such as charge carrier mobility ( μ ), barrier height ( ϕ _b ), series resistance ( R_s ), and ideality factor (n) are derived from the I-V curves. Norde’s and Cheung’s methods are also used to verify the consistency of these parameters. Significant improvements in the values of R_s , n and RR are observed in ITO/PEDOT:PSS/VOPcPhO– TiO_2 /Ag device compared to many other Schottky barrier diodes (SBDs). This enhancement is attributed to the incorporation of TiO_2 nanoparticles which provide high surface-to-volume ratio. Additionally, the conduction mechanism in the fabricated device is analyzed by focusing on Poole–Frenkel and Richardson Schottky effects. The paper also reports Ultraviolet–Visible spectroscopy (UV–Vis) to obtain optical bandgaps (1.9 and 3.4 eV), morphology such as atomic force microscopy (AFM) and scanning electron microscopy (SEM) for high-resolution surface investigation, X-ray diffraction (XRD) for the determination of material’s crystallinity and Fourier transformed infrared (FTIR) for functional group analysis of VOPcPhO– TiO_2 nanoparticles.

Herein, we report on the synthesis and characterization of p-type semiconductor indium phosphide/zinc sulphide (InP/ZnS) core/shell quantum dots (QDs) prepared via a simple solvothermal method and their potential application in bulk heterojunction (BHJ) flexible solar cell (SC). The BHJ SC composed of donor–acceptor (D-A) configuration at nanoscale provides larger interfacial junction area throughout the bulk volume of the photo-absorber D-A blend that facilitates excitons to efficiently dissociate within the bulk layer at D-A interface. Hence, InP/ZnS core–shell QDs and a fullerene derivative – phenyl C61 butyric acid methyl ester (PCBM) – are used as hybrid inorganic–organic D-A materials, respectively, to fabricate Ag/LiF/InP/ZnS-PCBM/P3HT/ITO/PET BHJ flexible SC. Indium tin oxide (ITO) coated on polyethylene terephthalate (PET), poly(3-hexylthiophene) (P3HT), lithium fluoride (LiF) and silver (Ag) are employed as a flexible substrate, hole transport layer (HTL), electron transport layer (ETL) and counter electrode, respectively. Photovoltaic (PV) properties of the fabricated BHJ flexible SC are studied under standard testing conditions (STC) i.e., 25 0C, 1.5 AM global and 100 mW/cm2 irradiation, which exhibit fill factor (FF) of 59 ± 0.02 % and power conversion efficiency (PCE) of 4.22 ± 0.05 %. Also, the heterojunction characteristics are investigated in dark condition (0 lx) to find series resistance (Rs), ideality factor (n), and reverse saturation current (I0). X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM) and ultraviolet–visible (UV–vis) spectroscopy are performed to further investigate the properties of InP/ZnS-PCBM thin films. Transmission electron microscopy (TEM) image of InP/ZnS core/shell QDs confirmed the successful synthesis of QDs having an average size of 5 ± 1 nm. The InP/ZnS-PCBM D-A photo-absorber layer reveals its potential as one of good candidates for high performance BHJ flexible SCs.

In this work, polypyrrole (PPy) is synthesized, characterized, and employed as an active sensing material for the fabrication of humidity sensors. An 80 nm thick layer of PPy is spin coated on the pre-patterned thermally deposited silver (Ag) electrodes spaced 50 µm apart to fabricate Ag/PPy/Ag surface-type sensor. Atomic force microscopy analysis revealed granular microstructure morphology in the thin films of PPy. Additionally, X-ray diffraction (XRD), ultraviolet–visible (UV-Vis) and Fourier transformed infrared (FTIR) spectra of PPy are analyzed to study its crystallinity, optical bandgap and bond dynamics to confirm the molecular composition of PPy. The fabricated Ag/PPy/Ag sensor is characterized by varying the humidity levels between a broad range [0–95

In this study, cobalt oxide (Co3O4), Mn-doped Co3O4 (MDCO), and Mn-doped Co3O4-functionalized carbon nanotube (MDCO-CNTs) were synthesized via the co-precipitation method using cobalt nitrate and manganese nitrate as a cobalt and manganese precursor, respectively. Synthesized materials were assessed using different characterization techniques like scanning electron microscopy, X-ray diffraction, and UV-visible spectroscopy. Congo red in an aqueous solution was adopted as the model dye to estimate the adsorption-assisted photocatalytic efficiency of the synthesized materials. The samples studied for adsorpsstion-assisted photocatalysis were found to be highly effective and among all the samples, the best removal performance (80%) was obtained by treating the MDCO-CNTs composite for 50 min at 50 °C. Mathematical modeling shows that all of the samples followed a pseudo-second-order kinetic model and data best fitted to a Langmuir isotherm, implying that the process involved in the removal of Congo red dye is chemisorption.

Biochar is a carbon-rich, cost-effective, and multifunctional material used for the immobilization of heavy metals (HMs) in contaminated soil. This study evaluated the wheat straw-derived biochar in a pot culture experiment in a greenhouse to investigate the remediation efficiency in coal mines contaminated soils. A bulk soil sample (20 cm) was collected from the mine tailing area of Dara Adam Khel region Peshawar, Pakistan. Biochar was thoroughly mixed at a rate of 2, 4, and 6% (w/w) with 10 kg soil along with untreated pots. Ten days old seedlings of tomato plants ( Rio Grande ) were transferred to both treated and untreated pots. The findings of the research highlighted that the highest contents of lead (Pb), cadmium (Cd), chromium (Cr), nickle (Ni), manganese, (Mn), and copper (Cu) were recorded in untreated pots, while the lowest were recorded in the pots treated with 6% biochar. Similarly, the highest uptake of Pb, Cd, Cr, Ni, Mn, and Cu was recorded in the untreated pots, while the lowest uptake was recorded in the pots treated with 6% biochar. The highest shoot weight (40 g) was recorded with the application of 4% of biochar. The highest values of pH and EC and organic matter were recorded in the pots treated with 6% of biochar as compared to untreated soil. Overall, the application of biochar at the maximum rate of 6% significantly immobilized HMs in soil and reduced the uptake in tomato shoots. To conclude, soil organic matter and plant growth was enhanced by the integration of biochar.

This work reports on the synthesis of small molecular semiconductor 2-(1H-pyrrol-1-yl)-anthracene-9,10-dione (PAD) via wet chemical precipitation route method for its possible potential applications in sensors. Thin film characterization of the synthesized PAD is carried out by studying its surface morphology, bond dynamics, and optical properties. For studying sensing characteristics of the PAD, its 100 nm thick film is thermally deposited on pre-patterned silver (Ag) electrodes over glass substrate having ~45 µm inter-electrode gaps to prepare Ag/PAD/Ag sensor. The effects of humidity (%RH), temperature (T), and illumination of light (Ev) on the fabricated Ag/PAD/Ag sensor are studied by changing one of the three (%RH, T, and Ev) parameters at a time and measuring the corresponding variations in capacitance (C) and capacitive reactance (X) of the device. As C and X also depend on frequency, sensing properties of the Ag/PAD/Ag sensor are measured at two different frequencies (120 Hz and 1 kHz) to find the optimum sensitivity conditions. To investigate reproducibility and repeatability of Ag/PAD/Ag sensor, each measurement is taken several times and also hysteresis loops of %RH vs. C are plotted at 120 Hz and 1 kHz to find the percent errors in each cycle of measurements. The sensor is active to sense humidity, temperature, and illumination within a broad range, i.e., from 15–93%RH, 293–382 K, and 1500–20,000 lx, respectively. Other key parameters of the sensor i.e., the humidity response time (TRes) and recovery time (TRec), are measured, which are 5 and 7 s, respectively, whereas for light sensing the values of TRes and TRec are measured to be 3.8 and 2.6 s, respectively. The measured values of TRes and TRec for the fabricated Ag/PAD/Ag sensor are shorter and better as compared to those of previously reported for similar kind of small molecular based sensors. The sensing properties of Ag/PAD/Ag device exhibit the potential of PAD for humidity, temperature, and light sensing applications.

We report on the fabrication and study of bulk heterojunction (BHJ) solar cells based on a novel combination of a donor–acceptor poly(9,9-dioctylfluorenyl-2,7-diyl)-co-(N,N0-diphenyl)-N,N′di(p-butyl-oxy-pheyl)-1,4-diamino-benzene) (PFB) and [6, 6]-phenyl-C61-butyric acid methyl ester (PCBM) blend composed of 1:1 by volume. indium tin oxide (ITO)/poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate (PEDOT:PSS)/PFB–PCBM/Ag BHJ solar cells are fabricated by a facile cost-effective spin-coating technique. The thickness of the active film (PFB–PCBM) plays an important role in the efficiency of light absorption, exciton creation, and dissociation into free charges that results in higher power conversion efficiency (PCE). In order to optimize the PCE as a function of active layer thickness, a number of solar cells are fabricated with different thicknesses of PFB–PCBM films at 120, 140, 160, 180, and 200 nm, and their photovoltaic characteristics are investigated. It is observed that the device with a 180 nm thick film demonstrates a maximum PCE of 2.9% with a fill factor (FF) of 53% under standard testing conditions (STC) (25 °C, 1.5 AM global, and 100 mW/cm2). The current–voltage (I-V) properties of the ITO/PEDOT:PSS/PFB–PCBM/Ag BHJ devices are also measured in dark conditions to measure and understand different parameters of the heterojunction. Atomic force microscopy (AFM) and ultraviolet-visible (UV-vis) absorption spectroscopy for the PFB–PCBM film of optimal thickness (180 nm) are carried out to understand the effect of surface morphology on the PCE and bandgap of the blend, respectively. The AFM micrographs show a slightly non-uniform and rough surface with an average surface roughness (Ra) of 29.2 nm. The UV-vis measurements of the PFB–PCBM blend exhibit a reduced optical bandgap of ≈2.34 eV as compared to that of pristine PFB (2.88 eV), which results in an improved absorption of light and excitons generation. The obtained results for the ITO/PEDOT:PSS/PFB–PCBM (180 nm)/Ag BHJ device are compared with the ones previously reported for the P3HT–PCBM blend with the same film thickness. It is observed that the PFB–PCBM-based BHJ device has shown two times higher open circuit voltage (Voc) and, hence, enhanced the efficiency.

This paper reports on the thin film characterization of a synthesized small molecular semiconductor N-butyl-N′-(6-hydroxyhexyl) perylene-3,4,9,10-tetracarboxylic acid diimide (N-BuHHPDI) and its potential use in Ag/N-BuHHPDI/PEDOT:PSS/p-Si heterojunction device. The device is fabricated using spin coating of a conducting polymer PEDOT:PSS on p-Si substrate followed by thermal deposition of a 100-nm-thin layer of N-BuHHPDI. To complete the fabrication of Ag/N-BuHHPDI/PEDOT:PSS/p-Si heterostructure, silver (Ag) is used as the top electrode. The device shows non-ohmic and asymmetrical current–voltage (I–V) characteristics in dark conditions at 25°C which confirm the successful formation of rectifying heterojunction. Various diode parameters such as ideality factor (n), barrier height (ϕb), series resistance (Rs) and charge carrier mobility across the interface of the heterojunction are measured from the I–V characteristics. The non-ideal behavior of the diode is correlated with the film morphology obtained by atomic force microscopy. Fourier transformed infrared spectroscopy is performed to confirm the successful preparation of N-BuHHPDI. The fluorescence lifetime (22 ns) of the N-BuHHPDI thin film is measured via fluorescence spectroscopy. Different charge conduction mechanisms including the dominant one are studied for the fabricated device.

This paper reports the potential application of cadmium selenide (CdSe) quantum dots (QDs) in improving the microelectronic characteristics of Schottky barrier diode (SBD) prepared from a semiconducting material poly-(9,9-dioctylfluorene) (F8). Two SBDs, Ag/F8/P3HT/ITO and Ag/F8-CdSe QDs/P3HT/ITO, are fabricated by spin coating a 10 wt% solution of F8 in chloroform and 10:1 wt% solution of F8:CdSe QDs, respectively, on a pre-deposited poly(3-hexylthiophene) (P3HT) on indium tin oxide (ITO) substrate. To study the electronic properties of the fabricated devices, current-voltage ( I–V ) measurements are carried out at 25 °C in dark conditions. The I–V curves of Ag/F8/P3HT/ITO and Ag/F8-CdSe QDs/P3HT/ITO SBDs demonstrate asymmetrical behavior with forward bias current rectification ratio (RR) of 7.42 ± 0.02 and 142 ± 0.02, respectively, at ± 3.5 V which confirm the formation of depletion region. Other key parameters which govern microelectronic properties of the fabricated devices such as charge carrier mobility (µ), barrier height (ϕ b ), series resistance (R s ) and quality factor (n) are extracted from their corresponding I–V characteristics. Norde’s and Cheung functions are also applied to characterize the devices to study consistency in various parameters. Significant improvement is found in the values of R s , n, and RR by 3, 1.7, and 19 times, respectively, for Ag/F8-CdSe QDs/P3HT/ITO SBD as compared to Ag/F8/P3HT/ITO. This enhancement is due to the incorporation of CdSe QDs having 3-dimensional quantum confinement and large surface-to-volume area. Poole-Frenkle and Richardson-Schottky conduction mechanisms are also discussed for both of the devices. Morphology, optical bandgap (1.88 ± 0.5 eV) and photoluminescence (PL) spectrum of CdSe QDs with a peak intensity at 556 nm are also reported and discussed.

In this paper, we report synthesis, thin film characteristics and sensing properties of cadmium selenide (CdSe) quantum dots (QDs) for enhancing the humidity and temperature sensing of a polymeric semiconductor poly(9,9-di-n-octylfluorenyl-2,7-diyl) (F8). Transmission electron microscopy (TEM) has been performed to study the texture, distribution over surface and size of the synthesized CdSe QDs. TEM image revealed slightly non-uniform distribution of the QDs with an average size of 4 nm having three-dimensional quantum confinement features. Atomic force microscopy (AFM) is carried out to investigate the average grain size and surface roughness of the F8-CdSe nanocomposite film. To understand the role of CdSe QDs on the sensing properties of F8, a blend F8-CdSe QDs has been prepared at 10: 1 wt-percent (wt%) of F8 and CdSe QDs, respectively, in chloroform. An Ag/F8-CdSe QDs/Ag surface-type sensor has been fabricated via spin coating F8-CdSe QDs nanocomposite on a 45 mu m gap between the pre-patterned silver (Ag) electrodes on glass substrate. The fabricated Ag/F8-CdSe QDs/Ag sensor has been studied for humidity and temperature sensing by measuring capacitance (C) of the sensor as a function of humidity and temperature, respectively. The Ag/F8-CdSe QDs/Ag sensor exhibits enhancement in the sensing parameters such as response time and recovery time i.e., 9 s and 7 s, respectively, as compared to our previously studied Ag/F8/Ag sensor whose response and recovery time were 15 s and 7 s, respectively. This improvement is due to the addition of CdSe QDs in F8 polymer matrix which changes some of the important properties of the F8-CdSe QDs nanocomposite such as electron polarizability, polarity, hydrophobicity and size dependent properties. The role of porosity (P) in the sensing properties of the active film of Ag/F8-CdSe QDs/Ag device has also been explored. The Ag/F8-CdSe QDs/Ag based sensor shows approximately linear change in C as a function of humidity and temperature with wide range of sensitivity from 25 percent relative humidity (% RH) to 90%RH and from 16 to 186 degrees C, respectively.

In this paper, we report optical characteristics of an organic single crystal oligomer 5,5⁗-diphenyl-2,2′:5′,2″:5″,2‴:5‴,2⁗-quinquethiophene (P5T). P5T crystal is a thiophene/phenylene co-oligomer that possesses better charge mobility as well as photoluminescence quantum efficiency (PLQE) as compared to other organic materials. Stimulated emission in P5T is investigated via amplified spontaneous emission (ASE) measurements within broad pump energies ranging from 35.26 to 163.34 µJ/cm2. An Nd-YAG femtosecond-tunable pulsed laser is used as a pump energy source for the ASE measurements of P5T crystals at an excitation wavelength of 445 nm. The ASE spectra exhibit optical amplification in P5T crystals at a 625 nm peak wavelength with a lower threshold energy density (Eth) ≈ 52.64 μJ/cm2. P5T also demonstrates higher optical gain with a value of 72 cm−1, that is calculated by using the variable stripe-length method. The value of PLQE is measured to be 68.24% for P5T. This study proposes potential applications of P5T single crystals in organic solid state lasers, photodetectors, and optical amplifiers.

This paper reports on the electronic and interfacial properties of a Schottky barrier diode (SBD) prepared from a blend consisting of a matrix semiconductor, poly(9,9-fluorufluorene) (PFB), and a dopant, cadmium selenide (CdSe) quantum dots (QDs) having size less than 5 nm. A uniform blend of PFB and CdSe QDs is prepared in chloroform 1:1 by volume and from a 0.5 wt.% of CdSe QDs and 20 mg/mL of PFB. The Schottky device ITO/PEDOT:PSS/PFB–CdSe/LiF/Ag is fabricated by spin coating the PFB–CdSe QDs blend on a pre-deposited PEDOT:PSS/ITO layer. Lithium fluoride (LiF) and silver (Ag) are thermally deposited via vacuum thermal evaporator as buffer layer and ohmic contact, respectively. The fabricated SBD is studied by current–voltage (I–V) characteristics under dark conditions at 300 K. The device exhibits rectifying behavior with rectification ratio of 301.28 at ± 2.5 V. The interface properties of the device such as series resistance (Rs), barrier height (ϕB), ideality factor (n) and reverse saturation current (I0) are measured to be 58.6 kΩ, 0.99 eV, 1.7 and 2.01 × 10−11 A, respectively. Charge carrier conduction mechanisms across the device such as Richardson–Schottky and Poole–Frenkel effects are studied where Schottky emission was identified at lower voltages while at higher voltages Poole–Frenkel effects were observed.

Study was conducted at Genetics Department of Hazara University (KPK) Pakistan, to develop. Genetic Interspecific materials derived from successful crossing of the two cultivated rice species Oryza sativa and Oryza rufipogon were intercrossed to find out their level of cross-compatibility and the extent of sterility in the Bas- 385 and Fakhar Malakand. All hybrids were partially sterile and showed significant differences in their seed set (0.6 to 33.09%). Pollen fertility tests indicated reduced pollen viability in the hybrids. Seed set was improved (up to 65%) when hybrids were backcrossed to either parent. Within the selected O. sativa improvement could therefore be possible through conventional crosses and best through backcross breeding. However O.longistaminata was not synchronize completely with Oryza sativa because of late booting and flowering. Only cross 1 & 2 (F. Malakand) formed 2 grains but it was not sure to either it will be fertile or not.

Phytic acid (Myo-inositol 1, 2, 3, 4, 5, 6 hexa-kisphophate) is a storage form of phosphorus and can accumulate to levels as high as 35% in the wheat kernel. Phytic acid acts as an anti-nutritional macromolecule (antinutrient) in the wheat kernel. Due to its inhibitory role, a high concentration of phytic acid is undesirable as it hinders the bioavailability of some essential nutrients such as Fe, Mg, Ca, Zn and Cu, etc. To see the inheritance of phytic acid in wheat, phytic acid concentration was initially determined in kernels of 10 wheat genotypes to identify two contrasting genetic groups for diallel analysis. Based on pre-screening results of 10 wheat genotypes, five wheat genotypes (3 with high and 2 with low phytic acid concentration) were crossed in all possible combinations during 2007-08 to generate a 5 × 5 full diallel set for studying the inheritance of phytic acid and other agronomic traits. All 20 F1 hybrids and 5 parental genotypes were planted using a randomized complete block design with three replicates during 2008-09 at Khyber Pakhtunkhwa Agricultural University, Peshawar. Analysis of variance revealed significant differences for all traits, providing justification for diallel analysis. According to Hotelling’s t 2 test and regression analysis, the additivedominance model was adequate for phytic acid, plant height, flag leaf area, partially adequate for days to heading and grain filling duration. Values of D greater than H1 and H2 for flag leaf area and plant height indicated their additive nature, whereas values of D less than H1 and H2 for grain filling duration and phytic acid concentration accounted for non-additive control of these traits. The narrow and broad sense heritability estimates varied widely among traits for days to heading (0.07, 0.32), flag leaf area (0.31, 0.55), grain filling duration (0.24, 0.91), plant height (0.12, 0.28) and phytic acid concentration (0.01, 0.86). The values for phytic acid concentration ranged from 0.56 to 3.43% among F1 hybrids and 1.06 to 3.67% for parental genotypes. The F1 hybrids, Ps-2005 × Ghaznavi (0.56%), AUP-4006 × Ps2004 (0.74%), Janbaz × Ps-2004 (0.89%) and Janbaz × Ps-2005 (1.01%), had the lowest concentration of phytic acid. This research confirms that F1 hybrids with low phytic acid concentration could yield desirable segregants.

The rice leaffolder, Cnaphalocrocis medinalis (Gn) attained the status of major pest during the last few years in major rice growing areas of the world. To search for possible sources of resistance against leaffolder, an experi ment comprising 14 species of wild rice ( Oryza sp.), three extensively cultivated varieties of ri ce in Pakistan together with one susceptible check of cultivated rice was conducted in the greenhouse of National Agricultural Research Centre, Islamabad during 2005. Most of the tested wild species and the three cultivated varieties showed s usceptibility to leaffolder. O. australiensis was highly susceptible to leaffolder with maximum damage rating score of 9 and highest percent infestation of 56.6. O. alta , O. barthii , O. grandiglumis , O. glumaepatula , O. latifolia, O. longistaminata , O. nivara , O. officinalis , O. punctata and O. rhizomatis gave damage rating score of 5 and were moderately susceptible to leaffolder. However, two wild species, O. brachyantha and O. rufipogon were found resistant to leaffolder with damage rating scale of 1. O. brachyantha and O. rufipogon showed low percent infestation values of 3.7 and 5.26, respectively. Whereas, O. meridionalis expressed moderate level of resistance with damage rating score of 3. Of the cultivated varieties used in the present study, Bas -385 and KSK-282 were found susceptible to this pest, with damage rating score of 7 while IR-6 was moderately susceptible with damage rating scale of 5. The use of these resistant w ild species via hybridization program is, therefore, suggested to i ncorporate resistance genes to cultivated rice and to develop rice cultivars resistant to this major insect pest.