Wafers where deposited with BPSG films having phosphorus concentration varying from 3.65 to 6.25% and boron concentration varying from 4 to 5.7%. These wafers were polished using CMP and the rates were found to depend on dopant concentrations. A fit to the data indicated that removal rates were more than 3 times as sensitive to boron concentration compared to phosphorus concentration. For a constant phosphorus concentration of 5%, each percent increase in boron increases CMP removal rate by 340 Å/min. For a constant boron concentration of 5%, each percent increase in phosphorus increases CMP removal rate by 96 Å/min.

Commercially available system hardware and consumables-sets produced well-characterized tungsten chemical mechanical planarization processes. Obtaining adequate tungsten removal rate selectivities to Ti/TiN layers and to oxides is critical for process integration, A marathon run showed that the process is reproducible.

Real time monitoring of particles in the process chamber and the roughing line of high current implanters has recently been of invaluable assistance to equipment manufacturers and fabrication Une process engineers. Earlier in situ particle monitors were limited in their performance by the size (>0.5 μm), velocity (< 750 cm/s) and concentration of the particles (< 100 particles/s) to be detected. The results from a recently developed particle monitor capable of measuring particle sizes down to > 0.22 μm, installed in a PI9200 ion implanter are discussed here. It is demonstrated that an equipment engineer can study, test, and improve autoclean cycles with the effect of any hardware change. The development of SPC charts and possible processing interlocks are discussed.