A new plasma flood gun (PFG) apparatus using a toroidal RF discharge has been developed producing very low energy electrons at high emission for wafer charge neutralization. The performance of the Toroidal PFG (TPFG) will be characterized and discussed under the typical implantation conditions in VIISta ion implanters. The charging performance is measured by using metal-oxide-semiconductor (MOS) capacitor antenna devices as well as the surface charge monitoring technique called surface photo voltage (SPV). The metal contamination performance of the TPFG surpasses that of the conventional cathode based PFG due to no presence of transition metals in the plasma cavity. The TPFG also provides process transparency for dose and uniformity performance. In addition, the mean time between maintenance (MTBM) has drastically increased as compared to the conventional filament PFG. The projected MTBM will exceed the filament PFG current lifetime without charging performance degradation.

In the Floating Silicon Method (FSM), a single-crystal Si ribbon is grown while floating on the surface of a Si melt. In this paper, we describe the phenomenology of FSM, including the observation of approximately regularly spaced “facet lines” on the ribbon surface whose orientation aligns with (111) crystal planes. Sb demarcation experiments sectioned through the thickness of the ribbon reveal that the solid/melt interface consists of dual (111) planes and that the leading edge facet growth is saccadic in nature, rather than steady-state.To explain this behavior, we propose a heuristic solidification limit cycle theory, using a continuum level of description with anisotropic kinetics as developed by others, and generalizing the interface kinetics to include a roughening transition as well as a re-faceting mechanism that involves curvature and the Gibbs–Thomson effect.

There is a need to improve the performance of Si+ implant dopant source for several emerging high dose low energy precision material modification implant applications. Beam current and source life obtained from SiF4, the currently available dopant source is not able to meet either the beam current or the ion source life desired to enable the adoption of such applications. This paper presents a novel silicon dopant gas source based on mixture of Si2H6 and SiF4, which delivers 15% higher beam current for Si in comparison to SiF4, thus enabling the process owners to implement these emerging Si implant applications. In addition this new dopant source mitigates halogen cycle effects associated with SiF4, offers long ion source life and reduces beam glitching which is a critical requirement for these applications. Additionally, the benefit of the UpTime (R) sub-atmospheric system used in the delivery of dopant gas mixtures to the implanter and enhancing the safety of implant operation is highlighted.

Un scanner de faisceau ionique comprend un premier etage de scanner possedant une premiere ouverture pour transmettre un faisceau ionique, le premier etage de scanner servant a generer, en reponse a un premier signal de deviation oscillant, un premier champ de deviation oscillant dans la premiere ouverture ; un second etage de scanner dispose en aval du premier etage de scanner et possedant une seconde ouverture pour transmettre le faisceau ionique, le second etage de scanner servant a generer, en reponse a un second signal de deviation oscillant, un second champ de deviation oscillant dans la seconde ouverture qui est dans la direction opposee a celle du premier champ de deviation oscillant, et un organe de commande de balayage pour synchroniser le premier signal de deviation oscillant et le second signal de deviation oscillant pour generer une pluralite de trajectoires d'ions qui definissent un foyer commun lorsque le faisceau ionique balaye quitte le second etage.

The continued advance of semiconductor technology, including the emergence of 3D device architectures, demands ever-increasing precision of dose and angle control in ion implantation. The Varian Semiconductor Equipment business unit of Applied Materials has enhanced the design of the industry's leading medium current implanter to meet the production requirements of advanced technology nodes. Improvements to the implanter architecture include more precise angle control, increased beam utilization, better uniformity and repeatability and longer maintenance intervals. Advanced ion optics allow measurement and control of beam shape.