Results are reported on the stress sensitive I–U characteristics of MS junctions prepared by r. f. sputtering of aluminium on n-type silicon. A stress-sensitive negative resistance effect found when the deposition is made on very high resistivity material is also reported. Es wird über druckempfindliche I–U-Kennlinien von Metall–Halbleiter-Übergängen berichtet, die durch r. f.-Zerstäubung von Aluminium auf n-Silizium hergestellt wurden. Ein druckempfindlicher negativer spezifischer Widerstand, der an Proben aus sehr hochohmigem Material festgestellt werden konnte, wird beschrieben.

Earlier investigators have shown that discontinuous metal films have higher gauge factors (defined as the ratio between relative resistance change and deformation) than the corresponding bulk metals. The effect is particularly pronounced for gold. The present study is focused on some properties of gold films that are important for strain gauge applications.