从室外环境、净化厂房环境和深紫外光刻机设备内部的微环境3个层面,梳理空气颗粒污染物、空气分子污染物和振动等工艺环境问题的来源,构建深紫外光刻工艺环境模型.分析准分子激光器、光路、上版系统、传片系统和主工作台等深紫外光刻机主要部件在工艺环境控制方面的特殊要求.研究深紫外光刻工艺使用的化学放大光刻胶的工作机理,分析空气分子污染物对光刻胶乃至整个光刻工艺的影响.研究空气颗粒污染物、空气分子污染物和振动有关的技术标准和控制等级要求.提炼、总结深紫外光刻工艺环境控制方案,逐级开展空气颗粒污染物控制、空气分子污染物控制、温湿度控制和防微振工作.

“一带一路”是中国提出的重要的国际合作倡议,顺应和平、发展、合作、共赢的时代潮流,得到国际社会的广泛关注和众多国家的积极响应.作为国民经济和社会发展的战略性、基础性和先导性产业,半导体产业的全球化发展继续呈现增长势头.随着综合国力的增强和半导体产业的快速发展,我国开始了新一轮的半导体发展热潮,但产能不足及劳动力优势的减弱,促使中国半导体企业谋求走出去发展战略. “一带一路”毗邻国家有较大的市场需求前景及人口红利优势,国家对于“一带一路”项目的资金援助,也为中国半导体企业走出去提供了机遇和可能.分析了“一带一路”国家的半导体产业现状,中国半导体企业参与其市场的机会、优势、注意事项,并祝愿更多的中资企业从容应对各种挑战,成就中国集成电路企业的国际化梦想.

Chemicals are important materials in microeletronic manufacture wet bench process. Foreign chemicals are widely used in high-level foundry in preliminary period as its exigent requirement. With the quality improvement of indigenous chemical suppliers, more and more domestic chemicals are in substitutional application. High level quality is required in microelectronic process, as a result, long period of time is need for domestic transformation. In the article, it is introduced two kind of solutions, Ammonia Solution and Hydrogen Peroxide. Comparisons of foreign and domestic solution are made in purities, process abilities and products usage. It comes to the conclusion that the substitution of domestic for foreign solution is available.

The paper focused on the radiation-hard 0.8 μm SOI CMOS process, the devices and circuits were fabricated. The devices and circuits’ behavior in Co60 γ ray irradiation circumstances was studied. It shows that the devices with and without the radiation-hard technology had different performance. The hardened devices’ threshold voltage of the front gate shifts less than 0.15 V. The hardened circuits’ standby current, dynamic current and function were also tested. The results showed that the circuits with the radiation-hard process can meet the speciifcation of 100 μA over the total dose range of 500 krad(Si).

工程进度管理内容包括对整个工程项目建设程序的管理、工程持续时间、工程进度的计划等，使项目在规定时间内完成，并达到质量要求。本文从工程进度的影响因素、工程建设项目进度管理的方法与措施、程建设项目进度管理目标的实现及其约束条件、工程建设项目进度管理过程中的各种关系协调四个方面论述了工程进度影响因素及工程建设项目进度管理关系。

Breakdown voltage,cutoff frequency fTand Ronare key parameters of power RF MOS devices.The measures of enhancing these characteristics are usually conflicting and restricting each other.The relation of these parameters are studied and the optimizing schemes are discussed.The development of silicon RF LDMOS power device towards a higher operation voltage,higher output power,higher reliability and a pulse application prospect.By using sinker technology to realize backside source,field plate technology to reduce feedback capacitance,polysilicon and silicide complex structure to reduce gate resistance,the measured results show that the device can deliver 5.6W output power at frequency 520MHz,CW,6V operate voltage,with more than 12dB power gain and 55% drain efficiency.

As the development of green power production,the application of high frequency switch power supply is deeper and widely.The main switch device in high frequency power switch circuit work with Fast Recovery Epitaxial Diode(FRED).It is critical to improve total capacity switch power supply that the good capacity of FRED.The paper give a detailed description of FRED characteristic parameter,discussing of the relationship between parameter and epitaxial layer.According the special requirement of FRED’s epitaxial layer,selecting low defector and special back damage wafer,taking special epitaxial process technique,reducing epitaxial defector,manage to improve the within wafer uniformity to below 2%.

0.5μm部分耗尽SOI MOSFET的寄生双极效应严重影响了SOI器件和电路的抗单粒子和抗瞬态γ辐射能力。文中显示,影响0.5μm部分耗尽SOI NMOSFET寄生的双极器件特性的因素很多,包括NMOSFET的栅上电压、漏端电压和体接触等,尤其以体接触最为关键。在器件处于浮体状态时,0.5μm SOI NMOSFET的寄生双极器件很容易被触发,导致单管闭锁。因此,在设计抗辐射SOI电路时,需要尽量降低SOI NMOSFET寄生双极效应,以提高电路的抗单粒子和抗瞬态γ辐射能力。

This topic is about the basic theory and composition of power VDMOS,covering the wide application for power electronic devices,the request for silicon epitaxy material and the development direction in the future.According to the demands for the epitaxial wafer,by optimizing the epitaxial process and parameter,we have eliminated or weakened the effect by self-dopant on resistivity uniformity,dispelled the impact by transition zone on thickness uniformity,well removed the configuration defect and,finally produced the demanded epitaxy material with large size.Meanwhile,our serious study,which is on the relationship between parameter of silicon epitaxy material and the electronic property parameter of VDMOS device,has laid a solid foundation for the development and popularity of power devices.

SOI devices have characteristics of high-speed, low-voltage,low-power, anti-radiation, anti-high temperature, which bulk devices do not have. SOI CMOS technology is capable of providing deep-submicron VLSI devices for high-speed, low-power, low- voltage applications. But SOI technology still faces challenge from many troubles of Floating-body Effect, Self-heating Effect, etc. As an international standard of SOI model, BSIM3SOIv1.3 supplies solution of new model parameters. BSIMPD is a physics-based SPICE model developed for bridging deep-submicron CMOS designs using partially depleted SOI technologies. BSIMPD is formulated on top of the industry-standard bulk-MOSFET model BSIM3V3 for a sound base of scalability and robustness. BSIMPD captures SOI-specific dynamic behaviors with its built-in floating-body, self-heating and body-contact models.

随着半导体设备中单片机的应用越来越多,对单片机控制系统的抗磁场干扰性能的要求不断提高,抗磁场干扰性能不仅来自硬件电路而且来自软件的稳定性.本文介绍了提高半导体设备单片机系统可靠性的"看门狗"硬件电路和软件设计方法.

本文论述了关于IC制造中使用的工艺气体和厂房设施、生产设备的危害及防护.

本文介绍在半导体工艺设备中常见的可编程逻辑器件.以及分析电路板中的可编程逻辑器件,写出已加密GAL器件的逻辑功能.