A model for static and transient simulations of an electrically erasable programmable read only memory cell has been developed. This physical compact model is based on charge sheet approach which is able to describe the complete electrical behavior of the cell. In this model, we have introduced the dependence of the tunneling capacitance as a function of the voltage across the tunnel oxide and the floating gate depletion effect. This model has been successfully implemented in common circuit simulators and used for the study of the write/erase operations in a memory cell. The simulations compared to the experimental results are in good agreement.

Electrically-erasable programmable read-only memory (EEPROM) reliability is of crucial interest. In a previous study of EEPROM cells programming we have shown that it is possible to decrease the electric field across the tunnel oxide with an appropriate programming signal without any change in the device. This improves the endurance of the memory cell with the same injected charge and the same performances. Another way to decrease the degradation of the oxide is to reduce the duration of the stress induced by the electric field across the tunnel oxide. Using the previous study, we show it is possible to reduce the programming time by a factor of ten compared to a standard signal

A model for static and transient simulations of an electrically erasable programmable read-only memory (EEPROM) cell has been developed. This physical compact model is based on charge sheet approach which is able to describe the complete electrical properties of the cell. In this model the charge neutrality, including the charge trapped on the floating gate, is applied to determine the surface potential. From the surface potential, related to the terminal voltages, the drain current and the different charges present in the cell structure can be calculated. This model has been successfully implemented in common circuit simulators (Eldo and Saber) and used for the study of the write/erase operations in an EEPROM cell.

The simulation of EEPROM memory characteristics is fundamental to the design and optimization of low-power non-volatile memory products. This paper presents a new method for extraction of Fowler-Nordheim parameters in a thin (polysilicon-gate) SiO/sub 2/ oxide. It consists of extraction of the oxide thickness from MOS capacitance characteristics including polysilicon-gate depletion. Then, we use the oxide thickness to estimate the electric field for the extraction of the FN current parameters.

A semi-quantum model of tunnel current through N-polysilicon/Oxide/N+-silicon structure is implemented in order to simulate transient behavior of an EEPROM memory cell. This model depends on the sheet charge, electron impact frequency on the interface and tunneling probability. A comparison of this model with Fowler-Nordheim model is given

This paper presents a study of EEPROM cell programming in order to increase the reliability of the device. Simulations show that it is possible to decrease the electric field across the tunnel oxide with a new programming signal. We obtain the same injected charge without any change in the device. This study allows us to improve the endurance of the memory cell.

A model for static and transient simulations of an electrically erasable programmable read only memory cell has been developed. This physical compact model is based on charge sheet approach which is able to describe the complete electrical behavior of the cell. In this model the charge neutrality, including the charge trapped on the floating gate, is applied to determine the surface potential. From the surface potential, related to the terminal voltages, the drain current and the different charges present in the cell structure can be calculated. This model has been successfully implemented in common circuit simulators and used for the study of the write/erase operations in an electrically erasable programmable read only memory cell.