We report on an orange-emitting intracavity frequency-doubled semiconductor disk laser based on the material system GaAsSb/GaAs. The infrared fundamental wavelength of λ=1220 nm corresponds to a second-harmonic wavelength of λ=610 nm. The second-harmonic generation is done using a lithium–triborate crystal as the nonlinear material. We have achieved an orange continuous-wave frequency-doubled laser output power of 30 mW in the fundamental transverse mode at a wavelength of λ=610 nm.

One of the challenges of the upcoming 10-Gigabit Ethernet standard are 10 Gbit/s capable transmitters for 850 nm and 1.3 /spl mu/m wavelength. The short-distance local area network (LAN) physical media layer requires 850 nm wavelength transmitters to be used for transmission over 100 m of 50 /spl mu/m core diameter multimode fiber (MMF) or 300 m of a new high-bandwidth MMF. We demonstrate room-temperature data transmission with monolithic InGaAsN/GaAs VCSELs with a 1.8 % fraction of nitrogen in the active quantum wells, emitting maximum single-mode optical powers of 0.7 mW at 1304 nm wavelength. Even at 80/spl deg/C heat-sink temperature, a maximum CW optical output power of 0.3 mW is observed, and a maximum operation temperature of +110/spl deg/C is extrapolated. Bit error rates of less than 10/sup -12/ have been achieved for transmission over a 20.5 km-long SSMF and a 500 m-long MMF at 2.5 Gbit/s as well as for back-to-back transmission at 10 Gbit/s.

One of the challenges of the upcoming 10-Gigabit Ethernet standard are 10 Gbit/s capable transmitters for 850 nm and 1.3 mum wavelength. The short-distance local area network (LAN) physical media layer requires 850 nm wavelength transmitters to be used for transmission over 100 in of 50 Am core diameter multimode fiber (MMF) or 300 in of a new high-bandwidth MMF. The physical layer at 1310 nm wavelength is proposed to be standardized to serial 10 Gbit/s or wide wavelength division multiplexing (WWDM) of 4x3.125 Gbit/s over 300 in MMF or up to 10 kin of standard singlemode fiber (SSMF) [1]. GaAs-based vertical-cavity surface-emitting lasers (VCSELs) emitting at a wavelength around 850 rim show excellent modulation behavior, low threshold currents, high wallplug efficiency [2], operation over a wide temperature range [3] and the possibility of heterogeneous integration with electronics and micro-optics [4]. GaAs-based 850 nm and newly developed InGaAsN-based 1.3 pin VCSELs [5,6] monolithically grown on AlGaAs/GaAs distributed Bragg reflectors on GaAs substrate can be used as transmitters for both of these standard wavelengths. We demonstrate room-temperature data transmission with monolithic InGaAsN/GaAs VCSELs with a 1.8 % fraction of nitrogen in the active quantum wells, emitting maximum single-mode optical powers of 0.7 mW at 1304 nm wavelength. Even at 80degreesC heat-sink temperature, a maximum CW optical output power of 0.3 mW is observed, and a maximum operation temperature of +110degreesC is extrapolated. Bit error rates of less than 10(-12) have been achieved for transmission over a 20.5 km-long SSMF and a 500 m-long MMF at 2.5 Gbit/s as well as for back-to-back transmission at 10 Gbit/s. As datacom systems move to higher data rates, requirements on optical transmitters increase. Modulation of VCSELs at 10 Gbit/s and beyond requires proper design of the interface to the driver circuit, which is in most cases determined by the package [7,8]. Up to now, in most single-channel transceivers, VCSEL and driver are spatially separated. The VCSELs are packaged in TO-cans and connected to the driver via a printed circuit board (PCB). One intention of this paper is to investigate the performance of a TO-46 package with high-speed GaAs VCSELs. To measure the behavior of the TO-46 package, a proper interface to the measurement system, which usually features coaxial 50 Q impedance input and output ports, has to be defined. Therefore a PCB with a transmission line is designed to which the TO-can and a coaxial 50 92 SMA microwave connector is soldered. The performance of the whole assembly is measured in small- and large-signal operation. With a 3-dB bandwidth of 7.5 GHz we demonstrate data transmission up to 10 Gbit/s over 100 in MMF as required by the 10-Gigabit Ethernet standard. As the operation speed increase of computers, the demand for high throughput capacity of the interconnects on PCBs and backplanes can be satisfied using optical waveguiding techniques [9,10]. Optical interconnects overcome the problems of electrical strip-lines like electromagnetic interference sensitivity, short link length and high crosstalk at high data rates [11]. Using large core multimode polymer waveguides with integrated mirrors and lenses, a high alignment tolerance in excess-of 500 pm for I dB loss has been achieved which helps to reduce cost and increase system lifetime [10]. We have successfully demonstrated 5 Gbit/s and 10 Gbit/s data transmission over 1 m-long multimode polymer optical waveguides with integrated beam deflection.The total waveguide attenuation including two 45degrees mirrors is as low as 5 dB. Due to a bitrate-distance-product of more than 10 Gbit/sxm the power penalties for transmission of 5 Gbit/s and 10 Gbit/s data are as low as 0.35 dB and 0.5 dB, respectively. Measured behaviors of TO-packaged VCSELs and waveguides used in the optical backplane concept prove the advantages of multi-Gbit/s data transmission over multimode optical waveguides with lengths even exceeding 1 m.

Summary form only given. GaAs-based laser diodes emitting around 13 μm have gained tremendous interest, not only because they are suitable sources for low dispersion optical fiber transmission, but rather due to the prospect of using their active material in vertical-cavity lasers (VCSELs). This paper deals with low threshold laser diodes containing a GaAsSb quantum well active layer. The lasers were grown by gas source molecular beam epitaxy (GSMBE).

Vertical-cavity surface-emitting lasers (VCSELs) with an InGaAs quantum-well, operating at 1129 nm have been fabricated. Due to lateral single-mode behavior and narrow far-field angles, the devices are versatile sources for optical fiber links. Bit-error rates (BERs) of less than 10/sup -11/ are demonstrated for 2.5-Gb/s data transmission over 10-km standard single-mode fiber (SMP).