Eye tracking is a crucial technology for understanding human attention and cognitive processes, with applications in scientific research, clinical diagnostics, and assistive technologies, playing a central role in augmented and virtual reality devices. Yet, achieving high-precision measurements remains challenging due to limitations in current approaches. Existing computer vision methods require complex illumination systems and consume significant power, while contact lens-based solutions rely on bulky electronics or require specialized fabrication. Here, a passive optical contact lens incorporating micrometer-scale moir & eacute; gratings is demonstrated that achieves high angular resolution through parallax-sensitive pattern analysis. This approach leverages the interference between two slightly mismatched periodic gratings to create macroscopic moir & eacute; patterns whose relative shifts encode viewing angle with extraordinary sensitivity. By analyzing multiple moir & eacute; patterns simultaneously, an angular precision of 0.28 degrees across a +/- 15 degrees range is achieved. The system requires only standard imaging hardware without auxiliary illumination, enabling continuous monitoring with minimal power consumption. Experimental validation demonstrates robust performance under realistic conditions, with the passive nature of the lens eliminating biocompatibility and power supply challenges. This parallax-based sensing principle opens new possibilities for minimally invasive, high-precision tracking in augmented reality systems and medical diagnostics, potentially transforming applications ranging from next-generation displays to neurological assessment tools.

In this work, we propose an eye-tracking mechanism that exploits specially designed labels integrated into the body of a contact lens. The labels consist of two overlapped gratings with a gap between them. The overlapped gratings produce a moire pattern, while the gap introduces parallax such that the moire pattern changes with the observation angle. By combining several moire labels, we can achieve unambiguous association of the produced pattern with the observation angle. This technique does not require calibration, reference marks, and is independent of illumination conditions and linear geometrical distortions. In our experiments, we achieved lens position and rotational degree of freedom precision higher than 0.3 degrees. Even higher accuracy - better than 0.2 degrees - was observed in a narrow range of angles similar to 10 degrees around the central direction that is suitable for most AR/VR applications.

Emitters of single photons are essential resources for emerging quantum technologies and developed within different platforms including nonlinear optics and atomic and solid-state systems. The energy-level structures of emission processes are critical for reaching and controlling high-quality sources. The most commonly applied test uses a Hanbury Brown and Twiss (HBT) setup to determine the emitter energy-level structure based on fitting temporal correlations of photon detection events. However, only partial information about the emission process is extracted from such detection, that might be followed by an inconclusive fitting of the data. This process predetermines our limited ability to quantify and understand the dynamics in the photon emission process that are of importance for the applications in communication, sensing, and computing. In this work, we present a complete analysis based on all normalized coincidences between detection and no-detection events recorded in the same HBT setup to certify expected properties of an emitted photonic state. As a proof of concept we apply our methodology to single nitrogen-vacancy centers in diamond, in which case the certification conclusively rejects a model based on a two-level emitter that radiates a photonic state mixed with any classical noise background.

Boron vacancies (VB-) in hexagonal boron -nitride (hBN) have sparked great interest in recent years due to their optical and spin properties. Since hBN can be readily integrated into devices where it interfaces a huge variety of other 2D materials, boron vacancies may serve as a precise sensor which can be deployed at very close proximity to many important materials systems. Boron vacancy defects may be produced by a number of existing methods, the use of which may depend on the final application. Any method should reproducibly generate defects with controlled density and desired pattern. To date, however, detailed studies of such methods are missing. In this paper, we study various techniques for the preparation of hBN flakes from bulk crystals and relevant postprocessing treatments, namely, focused ion beam (FIB) implantation, for creation of VB-s as a function of flake thickness and defect concentrations. We find that flake thickness plays an important role when optimizing implantation parameters, while careful sample cleaning proved important to achieve consistent results.

Boron vacancies (VB${^-}$) in hexagonal boron-nitride (hBN) have sparked great interest in recent years, due to their electronic spin properties. Since hBN can be readily integrated into devices where it interfaces a huge variety of other 2D materials, boron vacancies may serve as a precise sensor which can be deployed at very close proximity to many important materials systems. Boron vacancy defects may be produced by a number of existing methods, the use of which may depend on the final application. Any method should reproducibly generate defects with controlled density and desired pattern. To date, however, detailed studies of such methods are missing. In this paper we study various techniques, focused ion beam (FIB), electron irradiation and ion implantation, for the preparation of hBN flakes from bulk crystals, and relevant post-processing treatments to create VB${^-}$s as a function of flake thickness and defect concentrations. We find that flake thickness plays an important role when optimising implantation parameters, while careful sample cleaning proved important to achieve best results.

Spin-based applications of the negatively charged nitrogen-vacancy (NV) center in diamonds require an efficient spin readout. One approach is the spin-to-charge conversion (SCC), relying on mapping the spin states onto the neutral (NV0) and negative (NV–) charge states followed by a subsequent charge readout. With high charge-state stability, SCC enables extended measurement times, increasing precision and minimizing noise in the readout compared to the commonly used fluorescence detection. Nanoscale sensing applications, however, require shallow NV centers within a few nanometers distance from the surface where surface related effects might degrade the NV charge state. In this article, we investigate the charge state initialization and stability of single NV centers implanted ≈5 nm below the surface of a flat diamond plate. We demonstrate the SCC protocol on four shallow NV centers suitable for nanoscale sensing, obtaining a reduced readout noise of 5–6 times the spin-projection noise limit. We investigate the general applicability of the SCC for shallow NV centers and observe a correlation between the NV charge-state stability and readout noise. Coating the diamond with glycerol improves both the charge initialization and stability. Our results reveal the influence of the surface-related charge environment on the NV charge properties and motivate further investigations to functionalize the diamond surface with glycerol or other materials for charge-state stabilization and efficient spin-state readout of shallow NV centers suitable for nanoscale sensing.

Optical emitters of quantum radiation in the solid state are important building blocks for emerging technologies making use of the laws of quantum mechanics. The efficiency of photon extraction from the host material is low for many solid-state systems due to their relatively high index of refraction. In this article we experimentally study the emission spectrum of an ensemble of nitrogen-vacancy defects implanted around 8nm below the planar diamond surface and in the vicinity of a planar silver mirror. Scanning the distance between diamond and the mirror, we observe an enhancement of the spectral emission power by up to a factor of 3. We construct a model based on classical dipoles and elucidate the observations as being caused by interference in the far field of the emitters.

We report on the detailed spectroscopic investigation of a deeply implanted Germanium vacancy centers in diamond at cryogenic temperatures and using a resonant cross-polarization excitation scheme.

We report a new approach for monolithic integration of III-V materials into silicon, based on selective area growth and driven by a molten alloy in metal-organic vapor epitaxy. Our method includes elements of both selective area and droplet-mediated growths and combines the advantages of the two techniques. Using this approach, we obtain organized arrays of high crystalline quality InP insertions into (100) oriented Si substrates. Our detailed structural, morphological and optical studies reveal the conditions leading to defect formation. These conditions are then eliminated to optimize the process for obtaining dislocation-free InP nanostructures grown directly on Si and buried below the top surface. The PL signal from these structures exhibits a narrow peak at the InP bandgap energy. The fundamental aspects of the growth are studied by modeling the InP nucleation process. The model is fitted by our X-ray diffraction measurements and correlates well with the results of our transmission electron microscopy and optical investigations. Our method constitutes a new approach for the monolithic integration of active III-V materials into Si platforms and opens up new opportunities in active Si photonics.

The nitrogen-vacancy center in diamond has been explored extensively as a light-matter interface for quantum information applications, however, it is limited by low coherent photon emission and spectral instability. Here, we present a promising interface based on an alternative defect with superior optical properties (the germanium-vacancy) coupled to a finesse-11000 fiber cavity, resulting in a 31(-15)(+11)-fold increase in the spectral density of zero-phonon-line emission. This work sets the stage for cryogenic experiments, where we predict a measurable increase in the spontaneous emission rate.

Quantum emitters in hexagonal boron nitride (hBN) have attracted significant interest due to their bright and narrowband photon emission even at room temperature. The wide-bandgap two-dimensional material incorporates crystal defects of yet-unknown configuration, introducing discrete energy levels with radiative transition frequencies in the visible spectral range. The commonly observed high brightness together with the moderate fluorescence lifetime indicates a high quantum efficiency, but the exact dynamics and the underlying energy level structure remain elusive. In this study we present a systematic and detailed analysis of the photon statistics recorded for several individual emitters. We extract the individual decay rates by modeling the second-order correlation functions using a set of rate equations based on an energy level scheme involving long-lived states. Our analysis clearly indicates excitation-power-dependent non-radiative couplings to at least two metastable levels and confirms a near unity quantum efficiency.

The magneto-optic Voigt effect is observed in a synthetic diamond membrane with a substitutional nitrogen defect concentration in the order of 200 ppm and a nitrogen-vacancy defect subensemble generated through neutron irradiation and annealing. The measured polarization rotation in the reflected light is observed to be quadratically proportional to the applied magnetic field and to the incident reflection angle. Additionally, it is observed to be modifiable by illuminating the diamond with a 532 nm laser. Spectral analysis of the reflected light under 532 nm illumination shows a slow narrowing of the spectral distribution, indicating a small increase in the overall magnetization, as opposed to magnetization degradation caused by heating. Further analysis of the optical power dependence suggest this may be related to a shift in the spin ensembles charge state equilibrium and, by extension, the resulting ensemble magnetization.

We show that changing the spontaneous emission rate of nitrogen-vacancy (NV) centers in diamond through Purcell enhancement can modify the optical readout signal-to-noise ratio for electron spins. We study the effect experimentally with single NV centers in bulk diamond.

Nitrogen-vacancy (NV) centers in diamonds are interesting due to their remarkable characteristics that are well suited to applications in quantum-information processing and magnetic field sensing, as well as representing stable fluorescent sources. Multiple NV centers in nanodiamonds (NDs) are especially useful as biological fluorophores due to their chemical neutrality, brightness and room-temperature photostability. Furthermore, NDs containing multiple NV centers also have potential in high-precision magnetic field and temperature sensing. Coupling NV centers to propagating surface plasmon polariton (SPP) modes gives a base for lab-on-a-chip sensing devices, allows enhanced fluorescence emission and collection which can further enhance the precision of NV-based sensors. Here, we investigate coupling of multiple NV centers in individual NDs to the SPP modes supported by silver surfaces protected by thin dielectric layers and by gold V-grooves (VGs) produced via the self-terminated silicon etching. In the first case, we concentrate on monitoring differences in fluorescence spectra obtained from a source ND, which is illuminated by a pump laser, and from a scattering ND illuminated only by the fluorescence-excited SPP radiation. In the second case, we observe changes in the average NV lifetime when the same ND is characterized outside and inside a VG. Fluorescence emission from the VG terminations is also observed, which confirms the NV coupling to the VG-supported SPP modes.

The potential of graphene in plasmonic electro-optical waveguide modulators has been investigated in detail by finite-element method modelling of various widely used plasmonic waveguiding configurations. We estimated the maximum possible modulation depth values one can achieve with plasmonic devices operating at telecom wavelengths and exploiting the optical Pauli blocking effect in graphene. Conclusions and guidelines for optimization of modulation/intrinsic loss trade-off have been provided and generalized for any graphene-based plasmonic waveguide modulators, which should help in consideration and design of novel active-plasmonic devices.

Propagation of bound plasmon-polariton modes along 30-nm-thin gold strips on a silica substrate at the free-space wavelength of 1500 nm is investigated both theoretically and experimentally when decreasing the strip width from 1500 nm down to the aspect-ratio limited width of 30 nm, which ensures deep subwavelength mode confinement. The main mode characteristics (effective mode index, propagation length, and mode profile) are determined from the experimental amplitude- and phase-resolved near-field images for various strip widths (from 30 to 1500 nm), and compared to numerical simulations. The mode supported by the narrowest strip is found to be laterally confined within ~ 100 nm at the air side, indicating that the realistic limit for radiation nanofocusing in air using tapered metal strips is ~ λ/15.

Surface plasmon-polaritons are a possible solution for on-chip transportation and manipulation of information. Although there are several possibilities for designing the plasmonic waveguides, the two major caveats for all of them are the coupling to/from external sources and the losses they exhibit. In this work we will present an overview of our simulation, fabrication and characterisation activity in the plasmonic field where we tackle these issues. We start with presenting an optimised nanoantenna for coupling of free-propagating waves into a subwavelength slot waveguide modes. Optimised antennae show an increase in coupling efficiency up to 185 times compared to a bare waveguide. Once optimized, the nanoantennae were fabricated and the propagation in the slot waveguides was characterised. The characterisation shows an increase in the effective area (proportional to the coupling efficiency) of up to 175 times, similar to the calculated optimised parameters. We then move our attention to effective tapering of the plasmonic modes such that to achieve either strong field enhancement or propagation into thin plasmonic nanowires. Using on-chip nanofocusing with impedance-matched nanoantenna we can obtain a field enhancement of up to ~ 12000 evenly distributed in a volume of ~ 30x 30 x 10 nm3. The same taper can be used also for modifying the waveguide profile from a wide strip waveguide to a nanorod waveguide showing both the flexibility of our taper design as well as allowing to measure and compare the propagation characteristics in waveguides with various widths. We show that the propagation length matches very well the theoretical one and also obtain a limit for confinement of the mode in this type of plasmonic waveguides of ~ λ/15.

Random-phase metasurfaces, in which the constituents scatter light with random phases, have the property that an incident plane wave will diffusely scatter, hereby leading to a complex far-field response that is most suitably described by statistical means. In this work, we present and exemplify the statistical description of the far-field response, particularly highlighting how the response for polarised and unpolarised light might be alike or different depending on the correlation of scattering phases for two orthogonal polarisations. By utilizing gap plasmon-based metasurfaces, consisting of an optically thick gold film overlaid by a subwavelength thin glass spacer and an array of gold nanobricks, we design and realize random-phase metasurfaces at a wavelength of 800 nm. Optical characterisation of the fabricated samples convincingly demonstrates the diffuse scattering of reflected light, with statistics obeying the theoretical predictions. We foresee the use of random-phase metasurfaces for camouflage applications and as high-quality reference structures in dark-field microscopy, while the control of the statistics for polarised and unpolarised light might find usage in security applications. Finally, by incorporating a certain correlation between scattering by neighbouring metasurface constituents new types of functionalities can be realised, such as a Lambertian reflector.

It is generally accepted that nitrogen-vacancy (NV) defects in bulk diamond are bright sources of luminescence. However, the exact value of their internal quantum efficiency (IQE) has not been measured so far. Here we use an implementation of Drexhage's scheme to quantify the IQE of shallow-implanted NV defects in a single-crystal bulk diamond. Using a spherical metallic mirror with a large radius of curvature compared to the optical spot size, we perform calibrated modifications of the local density of states around NV defects and observe the change of their total decay rate, which is further used for IQE quantification. We also show that at the excitation wavelength of 532 nm, photo-induced relaxation cannot be neglected even at moderate excitation powers well below the saturation level. For NV defects shallow implanted 4.5 ± 1 and 8 ± 2 nm below the diamond surface, we determine the quantum efficiency to be 0.70 ± 0.07 and 0.82 ± 0.08, respectively.