This paper presents a single event burnout (SEB) sensitivity characterization for power MOSFETs, independent from tests, through a prediction model issued from TCAD analysis and the knowledge of device topology. The methodology is applied to a STRIPFET device and compared to proton data obtained at PSI, showing a good agreement in the order of magnitude of proton SEB cross section, and thus validating the prediction model as an alternative device characterization with respect to SEB.

This paper aims to propose a new approach to model the Dark Current Random Telegraph Signal (DC-RTS) maximum transition distribution in irradiated CMOS Image Sensors (CIS). Based on some outcomes of the Extreme Value Theory (EVT), it can be used to predict this distribution at the end of a given space mission. An example of application of this methodology is presented in detail.

Silicon transistor test vehicles used in infrared detectors were exposed to total dose at cryogenic temperatures. We present the degradation of the leakage current and threshold voltage of different transistor topologies at different dose rates and temperatures. The results show that the degradation occurs in the lateral parts of the transistors. Moreover, a different degradation was observed at 83 and 108 K. The higher temperature corresponds to the higher degradation; this can be explained by a more efficient hole transport process at these temperature. Measurements during the warming process of the devices show that a competition exists between the hole transport and their annealing, suggesting that a worst case of degradation could be found between nitrogen and room temperature.

The radiation tolerance of a 0.18 μm technology CMOS commercial image sensor has been evaluated with Co60 and proton irradiations. The effects of protons on the hot pixels and dynamic bias and duty cycle conditions during gamma irradiations are studied.

The radiation tolerance of a 0.18 μm technology CMOS commercial image sensor has been evaluated with Co 60 and proton irradiations. The effects of protons on the hot pixels and dynamic bias and duty cycle conditions during gamma irradiations are studied.

This paper investigates SEB physical/device mechanisms in power MOSFETs, and proposes SEB prediction model. Investigations relied on 2D TCAD simulations. Calculated SEB risk for IRF360 is consistent with ground experimental values and in-flight data.

Commercial off-the-shelf CMOS image sensors were irradiated with protons at energies ranging from 30 MeV to 185 MeV. The irradiation-induced dark current increase and its distribution are studied. An empirical prediction method is used to assess the increase of both mean dark current and associated non-uniformity after a mono-energetic proton irradiation. The results are found to be in good agreement with the experimental measurements. The model also proved to be well adapted to predict dark current increase distributions for a device exposed to a multi-energetic proton beam. The impact of this dark current enhancement on the radiometric performance of the sensor is also discussed.

The dark current random telegraph signal (RTS) behavior has been studied in a five-transistor-per-pixel (5T) pinned photodiode 0.18-μm COTS active pixel sensor (APS). Several devices, irradiated using protons and gamma rays, have been studied in order to assess the ionizing and displacement damage effects. The influence of the proton energy, fluence, ionizing dose and applied bias during irradiation on the number of RTS pixels, the number of discrete levels, maximum transition amplitude, and mean switching time constants is investigated.

Dark current evolution in Charge Coupled Devices (CCD) is experimentally studied with Co-60 and proton irradiations. Linear CCDs are irradiated in various static and dynamic bias conditions. Annealing effects are discussed and on-ground data are compared to in-flight data. Presented results on ionization-induced dark current increase in CCDs have demonstrated the impact of the sensor operational conditions and dose rate, revealing an ELDRS-like effect.

We present and compare different experimental methods used to determine defect introduction rates in materials constituting trijunction solar cells. Most of the experimental methods correlates together and with an analytical modeling. Defect introduction rates values in GaInP and GaAs are presented over a wide range of NIELs; this result seems intrinsic to these two materials.

Multi-junction solar cells, as other semiconductor devices, suffer degradation of their electrical and physical properties under particle irradiation (electrons and protons) in space environment. In this paper we present an analytical model in order to make predictions of multi-junction solar cells (GaInP/GaAs/Ge) degradation in space environment.

This paper describes STARDUST, a new Monte Carlo code dedicated to the simulation of particle tracks on imaging detector arrays. The geometrical detector model, the particle parameters sampling method, the particle tracking and energy deposition and, finally, the carrier collection by diffusion currents in the substrate are described in detail. Some examples of simulations are given at the end, together with a comparison between COROT Satellite data and Simulation results.

A code solving most of the known physical processes conducting to the MOS degradation under total dose constraint has been developed. Two lots of a power MOSFET have been exposed to Co60 irradiations with various temperature and different bias conditions. The parameters used in the code have been adapted in order to fit the experimental results. According to the simulation results, the physical processes leading to the measured oxide trapped charge and interface traps dependencies are discussed. Different kinetics of degradation when switching the dose rate from high to low and the ELDRS are explained by the electric field inversion due to shallow trapped holes. An estimation of the very low dose rate degradation is done for devices sensitive to ELDRS.

A silicon CCD imager has been irradiated with 10 MeV protons and measurements focused on random telegraph signal (RTS). A variance detection method is applied for quantifying the number of RTS after irradiation and through isochronal annealing. The observed behavior is analyzed and corresponds to the annealing of phosphorus-vacancies.

SDRAMs have been exposed to protons, neutrons, alpha particles, heavy ions and Co60 irradiations. Numerous cells exhibit large data retention time degradation that are attributed to single interactions. The physical process leading to the degradation is discussed. The annealing behavior and leakage current order of magnitude are compatible with the properties, stability and emission rate of clusters of defects in the silicon

This paper deals with SEE rate prediction and proposes a semi-empirical approach that makes no use of the RPP concept. The investigation is based on a reduced set of ground data and SEU/MBU results are compared with in-flight data obtained on memories on-board ICARE (SAC-C orbit). Two-dimensional mixed-mode simulations complete this study and provide first insight to understand the observed behavior

A contribution to the understanding of total dose degradation using both AC small signal analysis and DC analysis in linear bipolar circuits is proposed. The reasoning is illustrated step by step on the basis of experimental results obtained on the LM 139. It is shown that the input stage is mostly responsible for the degradation up to 20 krad. Above 20 krad, the total degradation is due to a combination of the input and the output stage degradation. The amplifier stage does not play a significant role in the circuit degradation

CCD imagers have been irradiated with 10 to 100MeV protons, 45 MeV neutrons and measurements focussed on random telegraph signal (RTS) characterization. The objective is to propose a method for RTS detection and to analyze pixel behavior with temperature, particle species and energy

Transistors and integrated circuits of silicon MOS and bipolar technologies have been evaluated under Co 60 and proton total dose, and neutron fluence. All the device types, including a SDRAM, present a specific sensitivity to neutron and protons.