A simple method for replicating metallic stamp from original masters via combined nanoimprint and electroforming is presented. In this work we demonstrate the generality of the method by replicating structures with dimensions ranged from several microns to sub-100nm in large patterned area. The structures were transferred first into an intermediate polymer sheet (IPS) with good uniformity and high structural fidelity, and then this IPS was used as the galvano-template for nickel electroforming. The major advantage of the method relies on the pattern transfer occurred between a soft polymer and the hard master, thereby the risk of damaging the mold is extremely low.

This paper examines the option-implied risk-neutral probability distribution for index options traded on the Stockholm market over two decades. The focus is on the method of derivation with the goal of being valuable as a reference for future research as well as being valuable for its results. The key results are: (i) the Swedish implied distribution is similar in shape to the US implied distribution, (ii) the Black–Scholes model doesn’t sufficiently explain option prices, (iii) there is significant time-variation in the implied volatility smile and (iv) put-call parity is violated by the volatility smile.

Organic electronics is a field that generates a very high interest both in the research community as well as industrially. To fully take use of its potential, the different features should be minimized. A typical organic transistor consists of source, drain, gate, dielectric and semiconductor. In particular, the channel length (length from source to drain) should be as small as possible. Therefore the width of the gate finger is a very important part, as well as the distance between drain and source. Another contributing factor is the thickness of the dielectric layer.The most suitable technology to produce these features is nanoimprint lithography. However, due to the fact that the transistors many times require patterns that combine micro and nano features, the nanoimprint lithography process must be highly flexible. Using the IPS (R)/STU (R) process from Obducat, we have shown that it is possible to produce bottom gate features in Au on flexible polymer substrates. The process is capable of producing patterns down to 23 nm in width. The process is highly tuneable, which means that the final pattern dimensions can be adjusted by adjusting the process. The process can produce both micro- and nano-patterns and any combination thereof on both flexible as well as standard substrates.