We present the first demonstration of a hybrid integrated silicon and ferroelectric nematic liquid crystal modulator achieving 102 Gbit per second PAM-4 modulation. Operating within the C-band at a 3.5 V DC bias, this Pockels-based Mach-Zehnder modulator exhibits a V_πL_AC of 0.3 V·cm.

We introduce ferroelectric nematic glass (FNG) as a promising material for high-speed silicon-organic modulators. The demonstrated Si-FNG modulator exhibits high efficiency, temperature stability, and alignment retention, utilizing the Pockels effect without unwanted low-frequency orientational contributions.

Electronic electro-optic (EEO) phase modulation is a key emerging technology for the chip-scale inter-conversion of signals between the electronic and photonic domains. The recent discovery of the ferroelectric nematic (N_F) liquid crystal phase, a three dimensional fluid of rod-shaped organic molecules having near-perfect equilibrium polar molecular orientational order, offers attractive opportunities for the creation of second-order nonlinear optical materials for EEO. Here we propose and realize a design motif for NF EEO molecules in which few-nanometer-long molecular rods are functionalized both for electro-static end-to-end association, facilitating NF phase formation, and for chromophoric optical nonlinearity, enabling high EEO efficiency, a combination enabling an active second-order nonlinear EEO medium that is 100

Recently discovered ferroelectric nematic liquid crystal promises to enable both strong phase shifters and fast Pockels' effect modulation without poling. We demonstrate the first silicon slot-waveguide hybrid integration and demonstrate modulation up to 35 GHz.

Recently discovered ferroelectric nematic liquid crystals (FNLCs) offer the opportunity to make liquid crystalbased, high-speed electro-optic devices. The lack of a center of symmetry combined with having the polar axis oriented parallel to the long, polarizable molecular axis allows for large second-order nonlinear optical susceptibility and therefore a large Pockels effect. The electro-optic response at high frequencies is purely electronic, making possible high-speed modulators with bandwidths limited only by device architecture. Facile and thermodynamically stable alignment of the polar axis over large areas makes FNLCs an attractive alternative to organic crystals and poled polymers, which have been pursued for decades as Pockels materials. A novel methodology for characterizing the electro-optic coefficient (r33) of this new class of Pockels material was developed. Using this methodology, FNLCs engineered to have large nonlinearities were demonstrated to have r33 values approaching that of lithium niobate.

SiOnyx has developed infrared enhanced CMOS image sensors leveraging a proprietary ultrafast laser semiconductor process technology. This technology demonstrates 10 fold improvements in infrared sensitivity over incumbent imaging technology while maintaining complete compatibility with standard CMOS image sensor process flows. Furthermore, these sensitivity enhancements are achieved on a focal plane with state of the art noise performance of 2 electrons/pixel. The focal plane is color enabled but high transmission of near infrared light allows for near infrared imaging from 850 to 1200 as well. The quantum efficiency enhancements have significant performance benefits in imaging 1064nm laser light as well as 850nm imaging of iris signatures for improved biometric identification.

The fabrication and performance of heterojunction Si solar cells on ~ 45 μm thick Si wafers with laser textured surfaces at the front or back, and with Al or ITO/Ag back reflectors is presented. Devices with a front junction and rear lasing are compared to those with front lasing and rear junction. Voc=700 mV and Jsc=35 mA/cm2 are obtained on cells with rear laser texture verifying that very good passivation and light trapping was obtained. FF ranged from 60 to 79% depending on the back contact processing. Devices with front heterojunction, rear laser texture and ITO/Ag back reflector achieved >17.5% efficiency with an optimized defect etch. Reducing defects at the lased surface is crucial to obtain high Voc and Jsc.

SiOnyx has developed visible and infrared CMOS image sensors leveraging a proprietary ultrafast laser semiconductor process technology. This technology demonstrates 10 fold improvements in infrared sensitivity over incumbent imaging technology while maintaining complete compatibility with standard CMOS image sensor process flows. Furthermore, these sensitivity enhancements are achieved on a focal plane with state of the art noise performance of 2 electrons/pixel. By capturing light in the visible regime as well as infrared light from the night glow, this sensor technology provides imaging in daytime through twilight and into nighttime conditions. The measured 10x quantum efficiency at the critical 1064 nm laser node enables see spot imaging capabilities in a variety of ambient conditions. The spectral sensitivity is from 400 to 1200 nm.

Silicon photodiodes with high photoconductive gain are demonstrated. The photodiodes are fabricated in a complementary metal-oxide-semiconductor (CMOS)-compatible process. The typical room temperature responsivity at 940 nm is >20 A/W and the dark current density is ≈ 100 nA/cm2 at 5 V reverse bias, yielding a detectivity of ≈ 10(14) Jones. These photodiodes are good candidates for applications that require high detection sensitivity and low bias operation.

Ultrafast lasers provide surface-specific interactions with materials, allowing unique modifications of various properties. The benefits of this technology for increased efficiency in a variety of silicon solar cell architectures are discussed.

SiOnyx is developing ultrafast laser processing techniques that improve the performance of semiconductor based photodetectors, solar cells, and image sensors. Ultrafast laser processing offers the unique ability to locally engineer the structural and doping characteristics of semiconductor devices and avoid adverse side effects. Ultrafast laser processing is incorporated into a variety of devices to increase the collection of longer wavelength light and improve quantum efficiency while maintaining scalability and CMOS compatibility.

SiOnyx has developed a CMOS image sensor with enhanced infrared sensitivity. The technology deployed in this remarkable device is based on SiOnyx's proprietary ultrafast laser semiconductor process. We have established a high volume manufacturing process while maintaining complete compatibility with standard CMOS image sensor process flows. The enhanced performance proves the viability of a highly scalable low cost digital infrared sensor. The spectral sensitivity is from 400 to 1200 nm with measured quantum efficiency improvements of more than 3x at 940 nm.