SiOnyx has demonstrated imaging at light levels below 1 mLux at 60 FPS with a SXGA backside illuminated CMOS image sensor in a compact, low latency camera. Sub mLux imaging is enabled by the combination of enhanced quantum efficiency in the near infrared, backside illumination for 100% fill factor, and state of the art read noise of 1.1 e/pix. The quantum efficiency enhancement is achieved by utilizing SiOnyx's proprietary nano and microtexturing processing technology in a backside illuminated architecture for high fill factor and enhanced near infrared absorption. The sensors can be configured with Bayer color filters for color imaging below quarter moon.

SiOnyx has extended the spectral sensitivity of a high performance low cost CMOS image sensor to cover the spectral band from 400nm to 1200nm. The enhanced quantum efficiency is combined with a CMOS sensor design that demonstrates state of the art read noise characteristics and low fixed pattern noise. The resultant sensor exhibits high signal to noise ratio throughout all lighting conditions from noon day sun to moonless clear starlight. In outdoor nighttime conditions, the extended quantum efficiency at wavelengths beyond 1000nm enables the silicon sensor to image “nightglow” illumination. This spectral range has historically only been accessible using non-silicon based SWIR sensors. This enables a true digital nightvision sensor with demonstrated imaging performance at 60 FPS at light levels below 1 mLux. The quantum efficiency enhancement is achieved by utilizing SiOnyx’s proprietary ultrafast laser semiconductor processing technology that enhances the absorption of light within a thin pixel layer. Recent progress in device architecture has enabled a further step change in near infrared quantum efficiency performance leading to improved nightglow imaging. SiOnyx has integrated this sensor into various camera systems for surveillance, nightvision and 1064nm laser see-spot.

SiOnyx has demonstrated imaging at light levels below 1 mLux (moonless starlight) at video frame rates with a 720P CMOS image sensor in a compact, low latency camera. Low light imaging is enabled by the combination of enhanced quantum efficiency in the near infrared together with state of the art low noise image sensor design. The quantum efficiency enhancements are achieved by applying Black Silicon, SiOnyx’s proprietary ultrafast laser semiconductor processing technology. In the near infrared, silicon’s native indirect bandgap results in low absorption coefficients and long absorption lengths. The Black Silicon nanostructured layer fundamentally disrupts this paradigm by enhancing the absorption of light within a thin pixel layer making 5 microns of silicon equivalent to over 300 microns of standard silicon. This results in a demonstrate 10 fold improvements in near infrared sensitivity over incumbent imaging technology while maintaining complete compatibility with standard CMOS image sensor process flows. Applications include surveillance, nightvision, and 1064nm laser see spot. Imaging performance metrics will be discussed. Demonstrated performance characteristics: Pixel size : 5.6 and 10 um Array size: 720P/1.3Mpix Frame rate: 60 Hz Read noise: 2 ele/pixel Spectral sensitivity: 400 to 1200 nm (with 10x QE at 1064nm) Daytime imaging: color (Bayer pattern) Nighttime imaging: moonless starlight conditions 1064nm laser imaging: daytime imaging out to 2Km

SiOnyx has demonstrated imaging at light levels below 1 mLux at 60 FPS with a 720P CMOS image sensor in a compact, low latency camera. The camera contains a 1 inch (16 mm) optical format sensor and streams uncompressed video over CameraLink with row wise image latency below 1 msec. Sub mLux imaging is enabled by the combination of enhanced quantum efficiency in the near infrared together with state of the art low noise image sensor design. The quantum efficiency enhancement is achieved by utilizing SiOnyx's proprietary ultrafast laser semiconductor processing technology that enhances the absorption of light within a thin pixel layer. Our technology demonstrates a 10 fold improvement in infrared sensitivity over incumbent imaging technology while maintaining complete compatibility with standard CMOS image sensor process flows. Applications include surveillance, nightvision, and 1064nm laser see-spot.

SiOnyx has developed infrared enhanced CMOS image sensors leveraging a proprietary ultrafast laser semiconductor process technology. This technology demonstrates 10 fold improvements in infrared sensitivity over incumbent imaging technology while maintaining complete compatibility with standard CMOS image sensor process flows. Furthermore, these sensitivity enhancements are achieved on a focal plane with state of the art noise performance of 2 electrons/pixel. The focal plane is color enabled but high transmission of near infrared light allows for near infrared imaging from 850 to 1200 as well. The quantum efficiency enhancements have significant performance benefits in imaging 1064nm laser light as well as 850nm imaging of iris signatures for improved biometric identification.

SiOnyx has developed visible and infrared CMOS image sensors leveraging a proprietary ultrafast laser semiconductor process technology. This technology demonstrates 10 fold improvements in infrared sensitivity over incumbent imaging technology while maintaining complete compatibility with standard CMOS image sensor process flows. Furthermore, these sensitivity enhancements are achieved on a focal plane with state of the art noise performance of 2 electrons/pixel. By capturing light in the visible regime as well as infrared light from the night glow, this sensor technology provides imaging in daytime through twilight and into nighttime conditions. The measured 10x quantum efficiency at the critical 1064 nm laser node enables see spot imaging capabilities in a variety of ambient conditions. The spectral sensitivity is from 400 to 1200 nm.

Laser created Black Silicon has been developed since 1998 at Harvard University. The unique optical and semiconducting properties of the black silicon first lead to interesting applications for sensors (photodetectors, thermal imaging cameras...). Other applications like Photovoltaic solar cells have been rapidly identified, but it took more than ten years of research and development before demonstrating a real improvement of the photovoltaic efficiency on an industrial multi-crystalline solar cell. This paper is a brief review of the use of black silicon for photovoltaic cells.

Silicon photodiodes with high photoconductive gain are demonstrated. The photodiodes are fabricated in a complementary metal-oxide-semiconductor (CMOS)-compatible process. The typical room temperature responsivity at 940 nm is >20 A/W and the dark current density is ≈ 100 nA/cm2 at 5 V reverse bias, yielding a detectivity of ≈ 10(14) Jones. These photodiodes are good candidates for applications that require high detection sensitivity and low bias operation.

Ultrafast lasers provide surface-specific interactions with materials, allowing unique modifications of various properties. The benefits of this technology for increased efficiency in a variety of silicon solar cell architectures are discussed.

SiOnyx is developing ultrafast laser processing techniques that improve the performance of semiconductor based photodetectors, solar cells, and image sensors. Ultrafast laser processing offers the unique ability to locally engineer the structural and doping characteristics of semiconductor devices and avoid adverse side effects. Ultrafast laser processing is incorporated into a variety of devices to increase the collection of longer wavelength light and improve quantum efficiency while maintaining scalability and CMOS compatibility.