100 Gb/s transmitters and receivers are realized through the monolithic integration of over 50 discrete functions onto a single InP chip. The modules are capable of simultaneously transmitting and receiving 10 DWDM wavelengths at >10 Gb/s.

A 10-channel transmitter and receiver DWDM photonic integrated circuit pair is demonstrated that is capable of transmitting and receiving data at 40 Gb/s per channel for an aggregate data communication rate of 400 Gb/s.

A 10 channel transmitter and receiver DWDM photonic integrated circuit pair is demonstrated that is capable of transmitting and receiving data at 40 Gbit/s per channel for an aggregate data communication rate of 400 Gbit/s.

100 Gb/s transmitters and receivers are realized through the monolithic integration of over 50 discrete functions onto a single InP chip. The modules are capable of simultaneously transmitting and receiving 10 DWDM wavelengths at > 10Gb/s. (c) 2005 Optical Society of America.

A 10-channel dense wavelength division multiplexed (DWDM) photonic integrated circuit is demonstrated that is capable of transmitting data at 10 Gbit/s per channel for an aggregate data transmission rate of 100 Gbit/s, operating without temperature stabilisation between 25 and 85 degrees C.

Four monolithically integrated LS-PICs, each consisting often channels operating at 11.1 Gb/s, for an aggregate rate >400 Gbit/s, have been operated over long distance transmission systems. Performance data of the PICs and system will be presented.

100 Gb/s transmitters and receivers are realized through the monolithic integration of over 50 discrete functions onto a single InP chip. The modules are capable of simultaneously transmitting and receiving 10 DWDM wavelengths at >10 Gb/s.

Summary form only given. We report the generation of blue and green laser light by single-pass frequency doubling of a novel high-power single-mode laser diode in a 1-cm-long quasi-phase-matched periodically poled LiNbO/sub 3/. The IR source is an angled-grating distributed-feedback (/spl alpha/-DFB) laser diode. Because of the high-power spatially coherent beam, efficient frequency doubling may be obtained without resonant cavity with stringent wavelength requirements or single-mode nonlinear waveguide with strict positional alignment tolerances. Furthermore, the /spl alpha/-DFB is relatively more tolerant to optical feedback, thus eliminating the need for costly and bulky optical isolators.

Electric field poling has become a well-established technique to create in ferro-electric materials micro-domain structures inverted periodically for nonlinear optical conversion applications. This technique cannot be directly applied for flux-grown KTiOPO4, (KTP) due to its relatively high (super ionic) conductivity. By one recently developed method, the KTP wafers are chemically treated before the poling process to increase their resistivity.1

Summary form only given. The combination of sum frequency generation (SFG) and SHG processes has generated 590 mW of green light from a planar periodically poled lithium niobate (PPLN) waveguide, which, to the best of our knowledge, is the highest power ever reported from such a device. In this experiment, combining the SFG and SHG processes within the planar waveguide produced 35% more green power than would be obtained by frequency doubling the two infrared polarizations separately.

An acousto-optic device operating in the Raman-Nath regime has been built and tested to investigate the potential benefits of using planar domain-inverted lithium niobate transducers to generate complex acoustic fields in acousto-optic (AO) devices. To our knowledge, this is the first example of a domain-inverted LiNbO3 transducer used to produce a focused acoustic field in an AO application.

Large nonresonant effective nonlinear indices that are due to cascading have been observed by Z-scan and CCD camera measurements performed on quasi-phase-matched LiNbO(3). Positive and negative values of n(cascad)(2) were measured at temperatures symmetrically displayed with respect to the optimum phase-matching temperatures (2.39 x 10(-13) and -2.37 x 10(-13)cm(2)/W, respectively).

We report the first realisation of periodic domain inversion by electric-field poling in Ti:LiNbO3 waveguides, for quasi-phase-matching (QPM) applications. Using a tunable Ti:Al2O3 laser we demonstrate guided blue light generation in a third-order QPM interaction.

This paper reviews nonlinear quasi-phase-matching (QPM) waveguides and laser diodes with application to conversion of infrared laser diode wavelengths to the visible. The discussion of nonlinear QPM waveguides includes Ti-diffusion poled and E-field poled LiNbO3 and KTP waveguides. Up to 25 mW of blue output power has been demonstrated for 120-mW infrared power injected into a nonlinear waveguide. Semiconductor laser sources suitable for frequency doubling are discussed, including distributed Bragg reflection (DBR) lasers operating at up to 200 mW output power, master oscillator power amplifiers with over 1 W output power, and wavelength-tunable flared semiconductor lasers with over 0.5 W output. A compact blue laser with 1-4 mW output power at 425-nm wavelength has been demonstrated based on a DBR laser frequency doubled in a nonlinear waveguide

Large nonresonant effective nonlinear indices that are due to cascading have been observed by Z-scan and CCD camera measurements performed on quasi-phase-matched LiNbO3. Positive and negative values of n(2)(cascad) were measured at temperatures symmetrically displayed with respect to the optimum phase-matching temperatures (2.39 x 10(-13) and -2.37 x 10(-13) cm(2)/W, respectively). (C) 1997 Optical Society of America.

By now, the many potential applications of a rugged blue laser source are well established, for instance printing, displays, and optical storage. In a longer time perspective, the direct-emitting blue and green semiconductor lasers are of course the most promising candidates. For the near-term supply of solid-state blue lasers, however, various hybrid approaches are being pursued. Examples include intracavity doubling in ring cavity lasers or in microchip lasers, and the approach that has been studied at SDL: single-pass frequency doubling of diode lasers in quasi-phase- matching (QPM) waveguides.

High-power single-spatial-mode near-IR laser diodes are mixed in periodically poled LiNbO(3) (PPLN) to generate broadly tunable mid IR-radiation. Conversion efficiencies to the mid IR up to 0.017%/W are demonstrated, and up to 31 microW of power is generated at the spectroscopically important 4.3-microm wavelength. We achieved broadband mid-IR tunability by mixing a wavelength-tunable laser-diode pump source with a fixed-wavelength master oscillator power amplifier laser-diode signal source in a PPLN sample that has a poling period that varies from 21.0 to 22.6 microm in the direction transverse to the beam propagation. We generated mid-IR radiation from 4.1 to 4.3 microm with these laser sources, using a fixed 22.0-microm period region of the sample.

The Quasi-Phase-Matching technique (QPM) [1], in which the ferroelectric domains of a nonlinear material are periodically inverted in order to compensate for dispersion, has become widely used for a number of nonlinear processes [2,3,4]. While bulk experiments in such structures have yielded results close to theoretical predictions, waveguided versions, which offer additional possibilities (higher theoretical efficiencies, electrooptic tuning, etc.) have not attained the predicted efficiencies. In this paper we compare the parametric fluorescence efficiency in both bulk and Annealed Proton Exchange (APE) waveguide configurations in an electric-field poled LiNbO3 sample, in which the inverted domains exist throughout the entire sample thickness.The results indicate, that even after annealing, the proton exchange process appears to erase the periodic domain inversion, to a depth comparable to that of the exchanged structure, leading to a lack of QPM in that region. Such an effect had already been proposed by Webjorn [5] concerning domains inverted by Ti diffusion at the surface of LiNbO3. He also noted however, that if an inverted "seed" remained below the surface, annealing could permit regrowth of the inverted structure above the seed. This model would have led one to expect that in materials poled throughout their entire thickness, as in E-field poled LiNbO3, the seed would always be present allowing appropriate regrowth of the domains during annealing. However, we shall demonstrate that this does not appear to be the case.