Perovskite solar cells have garnered substantial attention in recent years owing to their high efficiency and the tunable bandgaps of their perovskite absorbers. Among various fabrication techniques, vacuum-based thermal evaporation offers particularly advantageous by minimizing environmental influences such as humidity, thereby enabling enhanced phase stability and reproducibility. In particular, sequential thermal evaporation allows precise control over the deposition rate, thickness, and stacking order of individual precursor layers, providing a versatile platform for nanoscale materials engineering. In this study, mixed-cation perovskite thin films based on formamidinium lead iodide (FAPbI(3)) and cesium lead iodide (CsPbI3) were fabricated via sequential thermal evaporation. By optimizing the deposition sequence of organic and inorganic precursors, a well-defined solid-state diffusion pathway was established for efficient Cs+ incorporation into the perovskite layer. Structural and optical analyses, including X-ray diffraction and photoluminescence spectroscopy, revealed that Cs+ incorporation stabilizes the alpha-phase and enhances crystallinity while suppressing non-radiative recombination. Among the optical characterization, time-resolved photoluminescence and surface photovoltage measurements demonstrate prolonged carrier lifetimes, a stabilized local potential landscape under illumination, and reduced charge trapping. These structural and electronic enhancements resulted in superior device stability and performance, characterized by improved photocurrent generation and suppressed J-V hysteresis. As a result, the fill factor and the short-circuit current density increases and the power conversion efficiency of the devices improved dramatically-from 8.89% to 16.88%. Overall, this work demonstrates that sequential deposition engineering serves as a critical nanoscale design strategy for controlling cation distribution and phase stability in vacuum-processed perovskite thin films, thereby enabling robust and high-performance perovskite solar cells.

This study explores the templating role of organic nanocrystals, specifically 2,9-dimethylquinacridone (PR), in enhancing the mechanical performance of polyacrylonitrile (PAN)-derived carbon fibers. By incorporating PR—structurally analogous to the acridone units formed during PAN stabilization—into the PAN matrix, we investigate how these nanofillers direct the crystalline evolution and reinforce the resulting carbon fibers. PAN/PR nanocomposite fibers were prepared by dry-jet wet spinning, followed by stabilization and carbonization. Microstructural analysis reveals that well-dispersed PR nanocrystals serve as efficient nucleation sites, catalyzing the development of ordered carbon crystalline domains during heat treatment. As a result, carbon fibers containing 1 wt% PR displayed a pronounced increase in tensile strength and modulus (16% and 13% higher, respectively, than control samples), attributed to optimal PAN-PR interaction and effective templating effects. These findings demonstrate that the templating behavior of organic crystalline nanofillers can be harnessed to simultaneously promote carbon crystal growth and reinforce mechanical properties in PAN-based carbon fibers. Our results highlight an efficient approach to nanofiller incorporation, establishing 2,9-dimethylquinacridone as a promising, non-polymeric reinforcement for next-generation high-performance carbon fibers.

Solution processing provides a scalable route to assemble 2D building blocks into large-area films with low intersheet resistance, enabling scalable device integration. However, chalcogen vacancies introduced during processing often cause unintentional doping, and passivation strategies relying on strong reagents and controlled atmospheres increase process complexity. Here, rather than eliminating vacancies typically regarded as detrimental, we exploit vacancy-localized states in solution-processed MoS2 as essential defects to realize retinomorphic device arrays in which sensing and memory are co-localized within a two-terminal device. Trapping of photoexcited carriers at these vacancy-localized states enhances photogating and induces persistent photoconductivity, writing retentive conductance states without the need for additional trapping layers, floating gates, or complex heterostructures. The stored state is reversible upon oxygen exposure, which promotes de-trapping and restores the dark baseline. Additionally, wavelength-selective conductance modulation enables multilevel accumulation of color-encoded weights for RGB differentiation. Increasing optical pulse number progressively enlarges inter-color conductance contrast; when integrated with a convolutional neural network framework, the encoded states enable color recognition accuracy up to 94%. By exploiting a defect landscape inherent to solution-processed 2D films, this work establishes a scalable materials platform that simultaneously integrates sensing and memory at the pixel level while reducing processing complexity.

Heterogeneous integration of beta-phase gallium oxide (beta-Ga2O3) with high-thermal-conductivity substrates such as SiC offers a promising route toward improved thermal management in ultrawide bandgap beta-Ga2O3 power devices. Here, we systematically investigate phonon thermal transport and cooling limits in submicron beta-Ga2O3 thin films on SiC. Frequency-domain thermoreflectance measures the thermal conductivities and thermal boundary conductances (TBCs) of 0.1-1 mu m beta-Ga2O3 thin films grown by metal-organic chemical vapor deposition on 4H-SiC and c-plane sapphire substrates. The thermal conductivities are found to depend on both film thickness and crystallinity, with the 0.1 mu m films exhibiting among the highest values reported to date for beta-Ga2O3 films of comparable thickness. The beta-Ga2O3/SiC interface exhibits a relatively high TBC of-90 MW m-2 K-1, compared to values previously reported for bonded beta-Ga2O3/SiC and beta-Ga2O3/diamond interfaces. Scanning transmission electron microscopy and elemental mapping analyses confirm that this heterointerface is structurally and compositionally distinct. Semiclassical phonon transport theory predicts potential improvements in the phonon thermal properties. Based on these predictions, device thermal modeling reveals that heterointegration with SiC can fundamentally boost phononic cooling in lateral beta-Ga2O3 transistors-particularly at a reduced Ga2O3 thickness of-0.1 mu m-achieving thermal performance comparable to, or even surpassing, that of current stateof-the-art wide bandgap GaN devices.

The development of ambipolar two-dimensional (2D) field-effect transistors (FETs) based on transition metal dichalcogenides is hindered by Fermi-level pinning and the intrinsic trade-offs in using a single-contact geometry for both carrier types. Herein, a monolithic mixed-dimensional contact scheme is presented in which a one-step metallization seamlessly integrates one-dimensional high-work-function (Pd) edge contacts and 2D low-work-function (Ti) surface contacts. This architecture allows the spatial separation of hole and electron injection pathways on a WS2 ambipolar channel, enabling independent contact optimization without a complex doping process. The resulting WS2 FETs exhibit highly symmetric ambipolar characteristics, with on/off ratios exceeding 107, comparable field-effect carrier mobilities of 182.5 (holes) and 159.0 cm2V-1s-1 (electrons), and Schottky barrier heights below 20 meV for both carrier types. Structural and temperature-dependent electrical analyses confirm the high crystallinity of the channel layer, which has a highly symmetrical contact resistance for both hole and electron carriers. Furthermore, the architecture enables the fabrication of complementary logic circuits, as demonstrated via a low-power WS2-based inverter with a robust voltage transfer behavior. This mixed-dimensional contact scheme addresses the fundamental bottleneck in 2D device engineering and offers a scalable complementary metal-oxide-semiconductor-compatible route for ambipolar logic and reconfigurable electronics.

Among two-dimensional (2D) semiconductors, WSe2 is a promising channel material for next-generation low-power, high-density electronics; however, high contact resistance at the metal/WSe2 interface remains a critical bottleneck in achieving optimal p-type channel performances. Herein, a 325-nm ultraviolet laser-assisted localized oxidation process is proposed to form sub-stoichiometric WOX near the metal contact to modulate contact properties. Lateral force microscopy is utilized to verify the presence of WOX domains through a distinct friction contrast and statistical roughness evolution, showing excellent agreement with high-resolution transmission electron microscopy and energy-dispersive X-ray spectroscopy measurement. WOX induces localized p-type doping, reduces the effective Schottky barrier height, and lowers contact resistance by nearly four orders of magnitude without degrading channel crystallinity. The devices exhibit an on/off ratio of 10(7) and a subthreshold swing of 135 mV/dec. Selective WOX formation ensures efficient hole injection, whereas intrinsic n-type transport is maintained under global back-gate control, allowing for a polarity transition and five reconfigurable logic operations (OR, AND, NOR, NAND, and XNOR) in a single-transistor configuration. This laser-based strategy provides spatially selective, channel-preserving contact modulation with minimal thermal budget and establishes a scalable platform for advanced 2D logic electronics.

With the rapid proliferation of automotive and edge artificial intelligence applications, hardware‐level security has become a critical concern, exposing intrinsic vulnerabilities of conventional deterministic logic systems. To address these limitations, we propose a cryptographic framework based on probabilistic bits (p‐Bits) implemented with transistor‐free Ti/SiOx/Ti threshold switching (TS) devices. In a 4 × 4 cross‐point TS array, self‐oscillation emerges as output voltage spikes whose probability follows a sigmoidal dependence on input amplitude, enabling experimentally tunable randomness. The intrinsic stochastic oscillation of the TS device under voltage pulses provides controllable entropy that forms the foundation for probabilistic logic operations. Based on this functionality, OR, AND, and XOR gates are constructed using experimentally extracted p‐Bit models in MATLAB and Python. These gate configurations demonstrate invertible logic where fixed outputs constrain plausible input states, which is a drawback in conventional complementary metal–oxide semiconductor logic. Leveraging this invertibility, we design a p‐Bit full‐adder unit (pFA) capable of encryption and decryption of grayscale images within the same hardware module. A key‐update mechanism is introduced to overcome limitations associated with static key‐based encryption, improving security resilience. The pFA achieves reliable image recovery with high fidelity, establishing a versatile platform for secure and energy‐efficient hardware cryptographic accelerators.

Abstract Achieving fail-safe normally-off operation without plasma-induced damage remains a significant challenge in β-Ga2O3-based high-power electronics. We demonstrate a forward metal-assisted chemical (f-MAC) etching that functions as a damage-free and self-aligned process for recessed-gate β-Ga2O3 metal–semiconductor field-effect transistors. The asymmetric work functions of a Ti Ohmic electrode and buried Pt gate electrode establish a built-in electric field that separates photogenerated electron−hole pairs and drives the localized etching of β-Ga2O3, generating a recessed gate structure. A vertical etching rate of 7.9 nm/min enables a channel thickness reduction from 402 to 230 nm, shifting the threshold voltage from −9.14 to +1.55 V to achieve enhancement-mode operation. The device demonstrates a 33.7% reduction in subthreshold swing and a 5.26-fold enhancement in the on/off current ratio owing to the strengthened channel modulation and defect-preferential nature of f-MAC etching, establishing f-MAC etching as a promising damage-free fabrication process for high-performance β-Ga2O3 high-power electronics.

The explosive growth of analog visual data magnifies the von Neumann bottleneck, where physically separated sensing and processing units incur prohibitive data movement. A near-sensor architecture can mitigate this by carrying out low-level processing (LLP) at or adjacent to the sensor, but practical hardware that unifies LLP with high-level processing (HLP) on a scalable, singular platform based on standard fabrication processes remains hindered. Here, we report an operational design for a solution-processed indium oxide-based reconfigurable transistor that embeds alternative dual functionality in a single device: a visual sensor with an in-sensor LLP/memory function and an electrical synaptic device for an HLP function. Terminal-selective control of the ionic polarization yields two elemental behaviors: diode-like rectification (>10(4)) and transistor operation (apparent mobility = 37.5 cm(2) V--(1) s(-)(1)), respectively. Notably, the drain pulses confine electrochemical doping-induced conductance changes to a narrow window, enabling passive in-sensor LLP that experimentally enhances contrast in ultraviolet sensory signals. In contrast, the global gate pulses produce long-term synaptic plasticity with a 7-bit multi-state and a dynamic range of approximate to 365, demonstrating that the same single-gate platform can alternatively serve as a near-sensor HLP unit.

Aging is accompanied by a progressive decline in immune function, a process termed immunosenescence, which affects both innate and adaptive immune compartments. Among these, the adaptive immune system-and particularly T cells-undergoes the most profound functional and phenotypic alterations, critically impairing host defense against infections, cancer, and vaccination responses. The age-associated decline of adaptive immunity is shaped by the divergent senescence pathways of CD4+ helper and CD8+ cytotoxic T cells. While both lineages enter a state of cell-cycle arrest, their distinct immunological roles dictate fundamentally different molecular triggers, metabolic adaptations, and functional outcomes. This review synthesizes these subset-specific differences, highlighting how DNA damage-dependent mechanisms and DNA damage-independent processes drive distinct senescence phenotypes. Furthermore, we discuss how these differences contribute to immune system remodeling during aging and explore emerging therapeutic strategies targeting metabolic and signaling pathways to mitigate T cell senescence.

3D semantic image synthesis generates photo-realistic and view-consistent images from a single semantic mask, which typically requires skills that apply to many practical applications like image generation, editing, and data augmentation. Existing methods for semantic image synthesis primarily focus on image reconstruction for the same view of the input, leading to artifacts when generating images from different views. To alleviate this, we propose a novel framework employing a learning-based 3D GAN inversion, which enables the generation of 3D-aware RGB images and corresponding semantic masks from a 2D single-view semantic mask. We present a Semantic Component-guided Normalization ResNet block, allowing our encoder to capture semantic representations and reflect them to the output images. To ensure semantic consistency across different views, we introduce a semantic decoder that produces an auxiliary-view semantic mask. This mask serves as a pseudo-input for learning 3D properties. Furthermore, we incorporate a 3D geometric prior that encourages the model to produce high-fidelity images from various viewpoints. Experimental results demonstrate that our method outperforms state-of-the-art 3D-aware semantic image synthesis methods.

Given limited prior research, especially with small samples, this study examined the association between abnormal workplace temperature exposure and depressive symptoms among Korean employees. Using data from 30,108 workers in the fifth Korean Working Conditions Survey (KWCS), we analyzed this relationship by sex and job classification. Temperature exposure was categorized as mild or severe, and depressive symptoms were assessed using the World Health Organization Well-Being Index (WHO-5). The prevalence of depressive and anxiety symptoms was 12.36% in male and 11.72% in female. Severe exposure to both high and low temperatures was significantly associated with increased adjusted odds ratios (aOR = 1.35 for both, 95%CI:1.04–1.46 for high temperature, and 95%CI:1.12–1.62 for low temperature). Stratified analyses showed that severe heat exposure increased aOR in both men and women. Severe cold exposure was linked to higher aOR among service (aOR = 1.34, 95%CI:1.09–1.64) and blue-collar workers (aOR = 1.54, 95%CI:1.22–1.95), while heat exposure showed no significant differences across job types. Due to the cross-sectional design, causal relationships cannot be established. Nonetheless, severe temperature exposure may contribute to increased depressive symptoms, highlighting the need to reduce such exposure and improve workers’ mental health.

ABSTRACT As artificial intelligence transitions from high‐level cognitive function toward complex combinatorial optimization, compact nano‐oscillators have emerged as pivotal computing units applicable to deterministic and probabilistic paradigms. Unlike conventional architectures, these oscillators enable systems to navigate physical energy landscapes to identify global minima without encountering the local minima entrapment of traditional algorithms. This study explores the underlying physical mechanisms and engineering strategies related to binary transition‐metal oxides, NbOx and SiOx, to realize these fundamental oscillators. These materials exhibit abrupt threshold switching (TS) and rapid recovery, facilitating self‐sustained oscillations. Energy‐efficient oscillatory neural networks for deterministic inference can be realized by leveraging mutual interaction in coupled NbOx TS devices. Conversely, stochastic oscillations are triggered by deliberately engineering SiOx TS variability by interfacial control of oxygen vacancies. This stochasticity allows the SiOx TS device to serve as a robust entropy source for probabilistic bits (p‐bits), offering precise sigmoidal probability control. These p‐bits are employed to solve optimization problems with rapid convergence within a few physical cycles and provide hardware‐level randomness for cryptographic security. Overall, this dual‐functional framework demonstrates how tailoring material‐level physics can bridge the gap between fundamental oscillator dynamics and architectural requirements to address the energy and throughput bottlenecks of current Si‐based computing.

2D ultrathin oxides derived from liquid metals represent a unique class of 2D materials, offering low-temperature, scalable, and ambient-processable alternatives to conventional synthesis methods. Here, 2D ultrathin indium oxide (InOX) memtransistors are fabricated via a reproducible liquid-metal-printing process at 200 degrees C in ambient air, combining touch printing and blade coating. The resulting InOX films exhibit nanoscale thickness (similar to 4 nm), a wide optical bandgap (similar to 3.7 eV), and a polycrystalline, oxygen-deficient structure. Their intrinsically high conductivity is converted into stable semiconducting behavior through dry-air annealing. The fabricated memtransistors display robust, gate-tunable bipolar memristive switching with excellent endurance over 500 cycles and strong device-to-device uniformity. Notably, they achieve high switching ratios up to 103.63, outperforming most previously reported 2D memtransistors synthesized under high-temperature or vacuum conditions. The memristive behavior is governed by space-charge-limited conduction extending to the trap-filled limit, driven by carrier trapping/detrapping within exponentially distributed trap states. Moreover, the devices emulate synaptic plasticity and neuromodulation, achieving recognition accuracies up to 88.3% in artificial neural network simulations for handwritten image recognition. These results establish liquid-metal-printed ultrathin InOX as a promising, scalable platform for next-generation 2D neuromorphic and memory device technologies.

Developing nonvolatile memory and logic devices that operate reliably across extreme temperatures is critical for aerospace, automotive, and deep-space applications. Here, we present a dual-gate ferroelectric field-effect transistor that combines an ultrawide-band-gap β-gallium oxide channel with an optimized hafnium zirconium oxide/aluminum oxide (8/2 nm) gate stack. The interlayer reduces the interface trap density to 1.1 × 1011 cm−2eV−1 and enables a memory window of 10.6 V with stable anticlockwise hysteresis. The device maintains reliable ferroelectric switching and nonvolatile memory operation from cryogenic (98 K) to elevated (378 K) temperatures. The wide-temperature resilience arises from competing mechanisms, i.e., between thermally activated charge compensation at high temperatures and reduced electrostatic screening at cryogenic conditions. By programming the ferroelectric polarization state, a single transistor is dynamically reconfigured between AND and OR logic, establishing a platform for harsh-environment nonvolatile memory and reconfigurable logic electronics.

The radiation tolerance of single-crystal diamond devices was investigated under 10 MeV proton irradiation. Schottky barrier diodes (SBDs) and ITO/diamond heterojunction diodes were fabricated on boron-doped diamond substrates with a 10 mu m lightly doped drift layer and exposed to proton fluences from 1.0 & times; 1013 to 1.6 & times; 1014 cm-2. Irradiation induced increased on-resistance, reduced saturation current, and enhanced reverse leakage, with heterojunction devices showing greater degradation due to the vulnerability of the ITO layer and interface. Capacitance-voltage measurements revealed carrier removal rates of 171, 65, and 43 cm-1 for fluences of 1.0 & times; 1013, 6.0 & times; 1013, and 1.6 & times; 1014 cm-2, respectively, confirming diamond's superior radiation hardness compared to Si, GaN, and Ga2O3. This resilience is attributed to diamond's high atomic displacement energy, which limits lattice damage. These results demonstrate the potential of single-crystal diamond devices for radiation-hard power electronics and high-radiation environments.

β-gallium oxide (β-Ga 2 O 3 ) has attracted significant attention as a next-generation wide-bandgap semiconductor owing to its ultra-wide bandgap (4.9 eV) and strong potential to overcome the intrinsic limitations of silicon (Si) in high-power and high-frequency electronics. With the rapid expansion of artificial intelligence (AI) and high-performance computing systems, there is an urgent demand for semiconductor platforms capable of sustaining high power density and fast switching operation, while simultaneously supporting increasingly complex computing paradigms beyond conventional Boolean logic, such as energy-efficient process-in-memory (PIM) architectures that integrate logic and memory within a single platform. While conventional Si-based devices are fundamentally limited by their low on/off ratio and mobility constraints, β-Ga 2 O 3 offers a promising alternative in terms of operational robustness and power handling capability. Nevertheless, the inherently low field-effect mobility of β-Ga 2 O 3 —typically on the order of ~20 cm 2 /V∙s in conventional transistor architectures—remains a critical bottleneck, restricting both high-speed switching and the realization of advanced AI-oriented computing functionalities. In this work, we propose a novel junction-assisted hypertube architecture incorporating the two-dimensional (2D) semiconductor tungsten diselenide (WSe 2 ) to overcome the mobility limitation of β-Ga 2 O 3 . By forming a WSe 2 /β-Ga 2 O 3 junction-all-around (JAA) architecture, where the β-Ga 2 O 3 channel is conformally surrounded by gate-WSe 2 , the device promotes junction-assisted carrier transport while minimizing surface scattering, leading to a substantial enhancement in effective charge mobility. As a result, the proposed device achieves an exceptional field-effect mobility of 374.86 cm 2 /V∙s—exceeding that of conventional β-Ga 2 O 3 devices by more than an order of magnitude—along with an ultra-high on/off current ratio of approximately 3×10 10 . These results demonstrate that junction engineering with 2D materials can fundamentally redefine the transport limits of β-Ga 2 O 3 -based electronic devices. Beyond mobility enhancement, the WSe 2 -assisted junction structure exhibits pronounced negative differential resistance (NDR) behavior. While previously reported NDR devices (including esaki diode) typically show NDR ratios on the order of ~10 2 , our device achieves an exceptionally high NDR ratio approaching 10 6 . This large NDR ratio enables clear discrimination between multiple current states under different bias conditions, allowing the generation of three distinct voltage-dependent states. Such behavior highlights the feasibility of ternary (three-level) signal operation, offering a compelling platform for neuromorphic and multilevel logic applications. Importantly, the clear separation of multiple current states and the intrinsic NDR functionality can be directly leveraged for compute-in-memory/process-in-memory schemes, enabling energy-efficient execution of high-complexity operations within the device array. Moreover, the device exhibits non-volatile memory characteristics, further expanding its functional versatility beyond conventional transistor operation. Overall, this study presents an effective strategy to overcome the long-standing mobility limitations of β-Ga 2 O 3 by integrating 2D materials through junction-assisted device architectures. The demonstrated combination of ultra-high mobility, strong NDR behavior, multilevel logic capability, and non-volatile memory functionality establishes a promising pathway toward high-performance, reliable semiconductor devices for next-generation AI and high-speed computing technologies.

We demonstrate a single SiO x ‐based threshold switching (TS) device for dual‐mode operation, such that full‐oscillation and probabilistic‐oscillation (p‐oscillation) can be controllably selected using the input voltage ( V in ) range of 2–6 V. This functionality relies on the TS mechanism, involving the formation and spontaneous dissolution of a weak conductive filament. By optimizing the Ar:O 2 gas flow ratio during SiO x deposition, we modulate the oxygen vacancy concentration, determining the degree of variability in filament formation. This device exhibits uniform TS characteristics under low V in ( V in ≤ 3.5 V). When an AC pulse is applied to the device, voltage spikes are periodically generated owing to charging and discharging cycles, exhibiting stable full‐voltage oscillation. These devices serve as an oscillation neuron in oscillatory neural networks to accurately recognize noisy patterns. Under high V in ( V in ≥ 3.5 V), enhanced instability of these devices induces intermittent oscillation failures, yielding p‐oscillation. The probability of these spikes follows a V in ‐controllable sigmoid distribution, effectively leveraged as a probabilistic bit to solve vehicle routing problems. We implement this p‐oscillation as a robust entropy source for a true random number generator by integrating a five‐input XOR postprocessing circuit. This architecture provides critical immunity to probability deviations and ensures that the generated random numbers pass all 15 National Institute of Standards and Technology SP 800‐22 tests, as validated via physical model‐based simulations.