In high-electron-mobility transistor (HEMT) terahertz detectors, an excessively wide gate can generate oblique modes in the channel, resulting in weakened resonant detection signals and a broadened resonance peak. To address this issue, a side-gate HEMT (EdgeFET) structure was proposed. A resonant detection model for the side-gate device was established based on the hydrodynamic equations of the two-dimensional electron gas (2DEG) in conventional HEMT. A side-gate HEMT detector was fabricated, and terahertz resonant detection ex & hybull; periments were conducted at 77 K. The experimental results indicated that EdgeFET demonstrated distinct reso & hybull; nant responses at 77 K, with the resonant responsivity reaching 3. 7 times the maximum non-resonant responsivi & hybull; ty. The experimental data were fitted using the theoretical model to validate its accuracy. These results strongly confirm the effectiveness of EdgeFET in enhancing the resonant performance of the detector, providing a new technological approach for the development of next-generation high-performance terahertz detectors.

Silicon-based neural microneedle arrays, such as the Utah Array, have demonstrated excellent performance in chronic recordings from the cerebral cortex. Unlike planar thin-film electrodes with recording sites arranged on the surface of a silicon film, the recording sites of microneedle arrays are located at the tips of three-dimensional needles, which significantly complicates the fabrication process required for single-neuron recordings. To address this challenge, we develop a local de-insulation method for microneedle recording electrodes that eliminates the need for etching: the microneedle tips are encapsulated in a controllable-thickness protective layer, followed by deposition of a Parylene-C insulation layer. By optimizing the elasticity of the protection material, as well as its adhesion and shape on both the protective layer and the electrode shaft, we were able to precisely control the area of the removed insulated layers, resulting in consistent tip exposure. Experimental results show that the non-uniformity of the exposed microneedle recording sites in the silicon-based neural microelectrode arrays (each has 10 × 10 array) fabricated using this method is 3.32 ± 1.02

In this paper, a novel ultraviolet (UV) scatter communication scheme is presented, designed to dynamically adjust the signal duty cycle to optimize on–off keying (OOK) modulation and reduce the bit error rate (BER), particularly under varying rate settings. This approach addresses the significant challenge posed by LED tailing effects, which cause signal fluctuations and increase BER in high-speed communications. This BER suppression scheme is proposed for the first time in UV communication research, enhancing communication performance without the need for additional hardware or complex algorithms. A UV communication model that incorporates both path loss and LED tailing effects is introduced, with the probability density function of the signal from transmitter to receiver derived. By varying the signal duty cycle, tailing-induced BER is effectively minimized. Additionally, a closed-form expression for signal transmission BER using a single-scattering model is provided, and the proposed UV communication system is validated through comprehensive simulations and experimental tests. The results indicate that LED tailing has a pronounced impact on BER at higher communication speeds, while its effects are less significant at lower speeds. By optimizing the duty cycle parameters for various communication rates, findings demonstrate that lower duty cycle settings significantly reduce the BER at higher speeds. This further demonstrates the excellent performance of the proposed UV communication solution for OOK-modulated optical communication.

This paper reports a MEMS tuning fork gyroscope which can effectively reduce the acceleration output in both drive and sense directions. The structure adjusts the order of mechanical vibration modes through the design of internal and external lever coupling mechanism, moves the spurious in-phase mode frequency above the antiphase operating frequency, and provides a large frequency separation between the two modes. It provides true mechanical rejection of external shocks and accelerations. Two comparative tuning fork gyroscopes (TFG) structures are designed, which have traditional coupling in the drive direction and sense direction respectively. Through modal simulation, the internal lever-coupling brings the antiphase drive mode before the in-phase drive mode and the external lever-coupling brings the antiphase sense mode before the in-phase sense mode. The harmonic response simulation of three stiffness unbalanced TFGs verifies that the mode ordering of two directions can effectively suppress the acceleration output. The results show that the new TFG structure can suppress the acceleration output by more than 80%, and the finite element simulation results are consistent with the theoretical calculation.

This paper proposes a new scheme of pendulum accelerometer with sandwich structure. In this scheme, the electrical signal on the mass is connected to the wafer surface through glass isolated through-silicon-via (TSV), so that the basic characteristics of the accelerometer can be obtained by wafer-level testing. Compared with the current commercial device process scheme, the packaging and testing cost of the device can be greatly reduced. The glass-in-silicon (GIS) encapsulation caps on both sides of the device are prepared by glass isolated TSV and GIS reflow process. By designing the shape and size of the silicon electrode area and glass area of the GIS caps, the parasitic capacitance between the pendulum structure and the fixed electrode is reduced. Another advantage of using TSV to extract the electrical signal of the mass is that the Z-axis inertial force can be detected when the pendulum structure is placed perpendicular to the direction of gravity acceleration. In addition, electrodes are grown on the side of the split device, and when the pendulum structure is placed parallel to the direction of gravity acceleration, the inertial force of the XY-axis can be detected. The test shows that when the range of the pendulum accelerometer based on this scheme is & PLUSMN;2 g, the noise density of the accelerometer is 42 & mu;g & RADIC;Hz(-1) (X-axis), 40 & mu;g & RADIC;Hz(-1) (Y-axis) and 27 & mu;g & RADIC;Hz(-1) (Z-axis), and the bias instability is 6.6 & mu;g (X-axis), 7.1 & mu;g (Y-axis) and 6.8 & mu;g (Z-axis), reaching the level of commercial devices.

This paper reports a thermo-piezoresistive resonator with a measured Quality factor of over 3 million, and f-Q products of over 4.5e14, which is the highest value compared to the state-of-the-art. The device is wafer-level hermetic encapsulated through a cap with modified glass isolated TSVs, the proposed cap is suited for packaging MEMS structures in SOI wafers, and it is first reported. For a high Q-factor, the thickness of the structure is 4.5 μm for big mechanical potential energy, a symmetrical structure is chosen for low anchor loss and an extra beam with big stiffness is added between masses for a high resonant frequency. The phenomenon that self-oscillating occurs after the harmonic response to a scanning frequency excitation signal is recorded, and the resonant frequency and amplitude jump as the increased current flows in the resonator.

Mo2C/MoO3@rGO ternary nanocomposites were synthesized by a hydrothermal method, which can be applied to the high-sensitivity detection of low concentration of NH3 at room temperature. Compared with pure MoO3 and MoO3@rGO sensors, the Mo2C/MoO3@rGO sensors showed a significantly improved response to NH3 at room temperature. Among them, the 6% Mo2C/MoO3@rGO sensor showed a response of up to 0.82 for 5 ppm of NH3 with a response time of 87 s, which was 27.33 times higher than that of pure MoO3 (0.03 in 154 s) and 5.86 times higher than that of MoO3@rGO (0.14 in 139 s). It also has high repeatability, selectivity, good long-term stability, and immunity to humidity. These optimizations of the gas-sensing properties of the material may be attributed to the ability of the heterojunction to modulate the material surface carriers, the chemical sensitization and good electrocatalytic ability of Mo2C, and the large specific surface area and high carrier mobility of rGO. The synergistic effect between these three materials allows the designed Mo2C/MoO3@rGO ternary composite to detect trace amounts of NH3 at room temperature, making it possible to develop high-performance NH3 gas sensors.

The silicon etching process is a core component of production in the semiconductor industry. Undercut is a nonideal effect in silicon dry etching. A reduced undercut is desired when preparing structures that demand a good sidewall morphology, while an enlarged undercut is conducive to the fabrication of microstructure tips. Undercut is related to not only the production parameters but also the mask materials. In this study, five mask materials-Cr, Al, ITO, SiNx, and SiO2-are chosen to compare the undercut effect caused by the isotropic etching process and the Bosch process. In the Bosch process, the SiNx mask causes the largest undercut, and the SiO2 mask causes the smallest undercut. In the isotropic process, the results are reversed. The effect of charges in the mask layer is found to produce this result, and the effect of electrons accumulating during the process is found to be negligible. The undercut effect can be enhanced or suppressed by selecting appropriate mask materials, which is helpful in the MEMS process. Finally, using an Al mask, a tapered silicon tip with a top diameter of 119.3 nm is fabricated using the isotropic etching process.

This paper presents a new metal-contact RF MEMS switch based on an Al-Sc alloy. The use of an Al-Sc alloy is intended to replace the traditional Au-Au contact, which can greatly improve the hardness of the contact, and thus improve the reliability of the switch. The multi-layer stack structure is adopted to achieve the low switch line resistance and hard contact surface. The polyimide sacrificial layer process is developed and optimized, and the RF switches are fabricated and tested for pull-in voltage, S-parameters, and switching time. The switch shows high isolation of more than 24 dB and a low insertion loss of less than 0.9 dB in the frequency range of 0.1–6 GHz.

The silicon on glasses process is a common preparation method of micro-electro-mechanical system inertial devices,which can realize the processing of thick silicon structures.This paper proposes that indium tin oxides(ITO)film can serve as a deep silicon etching cut-off layer because ITO is less damaged under the attack of fluoride ions.ITO has good electrical conduct-ivity and can absorb fluoride ions for silicon etching and reduce the reflection of fluoride ions,thus reducing the foot effect.The removal and release of ITO use an acidic solution,which does not damage the silicon structure.Therefore,the selection of the sacrificial layer has an excellent effect in maintaining the shape of the MEMS structure.This method is used in the prepara-tion of MEMS accelerometers with a structure thickness of 100 μm and a feature size of 4 μm.The over-etching of the bottom of the silicon structure caused by the foot effect is negligible.The difference between the simulated value and the designed value of the device characteristic frequency is less than 5％.This indicates that ITO is an excellent deep silicon etch stopper ma-terial.

High-performance MEMS accelerometers usually use a pendulum structure with a larger mass. Although the performance of the device is guaranteed, the manufacturing cost is high. This paper proposes a method of fabricating high-performance MEMS accelerometers with a TGV process, which can reduce the manufacturing cost and ensure the low-noise characteristics of the device. The TGV processing relies on laser drilling, the metal filling in the hole is based on the casting mold and CMP, and the packaging adopts the three-layer anodic bonding process. Moreover, for the first time, the casting mold process is introduced to the preparation of MEMS devices. In terms of structural design, the stopper uses distributed comb electrodes for overload displacement suppression, and the gas released by the packaging method provides excellent mechanical damping characteristics. The prepared accelerometer has an anti-overload capability of 10,000 g, the noise density is less than 0.001°/√Hz, and it has ultra-high performance in tilt measurement.

A novel three-dimensional (3D) wafer-level sandwich packaging technology is here applied in the dual mass MEMS butterfly vibratory gyroscope (BFVG) to achieve ultra-high Q factor. A GIS (glass in silicon) composite substrate with glass as the main body and low-resistance silicon column as the vertical lead is processed by glass reflow technology, which effectively avoids air leakage caused by thermal stress mismatch. Sputter getter material is used on the glass cap to further improve the vacuum degree. The Silicon-On-Insulator (SOI) gyroscope structure is sandwiched between the composite substrate and glass cap to realize vertical electrical interconnection by high-vacuum anodic bonding. The Q factors of drive and sense modes in BFVG measured by the self-developed double closed-loop circuit system are significantly improved to 8.628 times and 2.779 times higher than those of the traditional ceramic shell package. The experimental results of the processed gyroscope also demonstrate a high resolution of 0.1°/s, the scale factor of 1.302 mV/(°/s), and nonlinearity of 558 ppm in the full-scale range of ±1800°/s. By calculating the Allen variance, we obtained the angular random walk (ARW) of 1.281°/√h and low bias instability (BI) of 9.789°/h. The process error makes the actual drive and sense frequency of the gyroscope deviate by 8.989% and 5.367% compared with the simulation.

I Microhotplates are critical devices in various MEMS sensors that could provide appropriate operating temperatures. In this paper, a novel design of poly-Si membrane microhotplates with a heat compensation structure was reported. The main objective of this work was to design and fabricate the poly-Si microhotplate, and the thermal and electrical performance of the microhotplates were also investigated. The poly-Si resistive heater was deposited by LPCVD, and phosphorous doping was applied by in situ doping process to reduce the resistance of poly-Si. In order to obtain a uniform temperature distribution, a series of S-shaped compensation structures were fabricated at the edge of the resistive heater. LPCVD SiNx layers deposited on both sides of poly-Si were used as both the mechanical supporting layer and the electrical isolation layer. The Pt electrode was fabricated on the top of the microhotplate for temperature detection. The area of the heating membrane was 1 mm × 1 mm. Various parameters of the different size devices were simulated and measured, including temperature distribution, power consumption, thermal expansion and response time. The simulation and electrical–thermal measurement results were reported. For microhotplates with a heat compensation structure, the membrane temperature reached 811.7 °C when the applied voltage was 5.5 V at a heating power of 148.3 mW. A 3.8 V DC voltage was applied to measure the temperature distribution; the maximum temperature was 397.6 °C, and the area where the temperature reached 90% covered about 73.8% when the applied voltage was 3.8 V at a heating power of 70.8 mW. The heating response time was 17 ms while the microhotplate was heated to 400 °C from room temperature, and the cooling response time was 32 ms while the device was recovered to room temperature. This microhotplate has many advantages, such as uniform temperature distribution, low power consumption and fast response, which are suitable for MEMS gas sensors, humidity sensors, gas flow sensors, etc.

Zero-rate output (ZRO) drift induces deteriorated micro-electromechanical system (MEMS) gyroscope performances, severely limiting its practical applications. Hence, it is vital to explore an effective method toward ZRO drift reduction. In this work, we conduct an elaborate investigation on the impacts of the internal and packaging stresses on the ZRO drift at the thermal start-up stage and propose a temperature-induced stress release method to reduce the duration and magnitude of ZRO drift. Self-developed high-Q dual-mass tuning fork gyroscopes (TFGs) are adopted to study the correlations between temperature, frequency, and ZRO drift. Furthermore, a rigorous finite element simulation model is built based on the actual device and packaging structure, revealing the temperature and stresses distribution inside TFGs. Meanwhile, the relationship between temperature and stresses are deeply explored. Moreover, we introduce a temperature-induced stress release process to generate thermal stresses and reduce the temperature-related device sensitivity. By this way, the ZRO drift duration is drastically reduced from ~2000 s to ~890 s, and the drift magnitude decreases from ~0.4 °/s to ~0.23 °/s. The optimized device achieves a small bias instability (BI) of 7.903 °/h and a low angle random walk (ARW) of 0.792 °/√ h, and its long-term bias performance is significantly improved.

Degradation of a metallic film under harsh thermal-mechanical-electrical coupling field conditions determines its service temperature and lifetime. In this work, the self-heating degradation behaviors of Pt thin films above 1000 °C were studied in situ by TEM at the nanoscale. The Pt films degraded mainly through void nucleation and growth on the Pt-SiNx interface. Voids preferentially formed at the grain boundary and triple junction intersections with the interface. At temperatures above 1040 °C, the voids nucleated at both the grain boundaries and inside the Pt grains. A stress simulation of the suspended membrane suggests the existence of local tensile stress in the Pt film, which promotes the nucleation of voids at the Pt-SiNx interface. The grain-boundary-dominated mass transportation renders the voids grow preferentially at GBs and triple junctions in a Pt film. Additionally, under the influence of an applied current, the voids that nucleated inside Pt grains grew to a large size and accelerated the degradation of the Pt film.

Tuning fork gyroscopes (TFGs) are promising for potential high-precision applications. This work proposes and experimentally demonstrates a novel high-Q dual-mass tuning fork microelectromechanical system (MEMS) gyroscope utilizing three-dimensional (3D) packaging techniques. Except for two symmetrically decoupled proof masses (PM) with synchronization structures, a symmetrically decoupled lever structure is designed to force the antiparallel, antiphase drive mode motion and eliminate low frequency spurious modes. Thermoelastic damping (TED) and anchor loss are greatly reduced by the linearly coupled, momentum- and torque-balanced antiphase sense mode. Moreover, a novel 3D packaging technique is used to realize high Q-factors. A composite substrate encapsulation cap, fabricated by through-silicon-via (TSV) and glass-in-silicon (GIS) reflow processes, is anodically bonded to the wafer-scale sensing structures. A self-developed control circuit is adopted to realize loop control and characterize gyroscope performances. It is shown that a high-reliability electrical connection, together with a high air impermeability package, can be fulfilled with this 3D packaging technique. Furthermore, the Q-factors of the drive and sense modes reach up to 51,947 and 49,249, respectively. This TFG realizes a wide measurement range of ±1800 °/s and a high resolution of 0.1°/s with a scale factor nonlinearity of 720 ppm after automatic mode matching. In addition, long-term zero-rate output (ZRO) drift can be effectively suppressed by temperature compensation, inducing a small angle random walk (ARW) of 0.923°/√h and a low bias instability (BI) of 9.270°/h.

With the development of the designing and manufacturing level for micro-electromechanical system (MEMS) gyroscopes, the control circuit system has become a key point to determine their internal performance. Nevertheless, the phase delay of electronic components may result in some serious hazards. This study described a real-time circuit phase delay correction system for MEMS vibratory gyroscopes. A detailed theoretical analysis was provided to clarify the influence of circuit phase delay on the in-phase and quadrature (IQ) coupling characteristics and the zero-rate output (ZRO) utilizing a force-to-rebalance (FTR) closed-loop detection and quadrature correction system. By deducing the relationship between the amplitude-frequency, the phase-frequency of the MEMS gyroscope, and the phase relationship of the whole control loop, a real-time correction system was proposed to automatically adjust the phase reference value of the phase-locked loop (PLL) and thus compensate for the real-time circuit phase delay. The experimental results showed that the correction system can accurately measure and compensate the circuit phase delay in real time. Furthermore, the unwanted IQ coupling can be eliminated and the ZRO was decreased by 755% to 0.095°/s. This correction system realized a small angle random walk of 0.978°/√h and a low bias instability of 9.458°/h together with a scale factor nonlinearity of 255 ppm at room temperature. The thermal drift of the ZRO was reduced to 0.0034°/s/°C at a temperature range from −20 to 70 °C.

In this paper, we report a novel teeter-totter type accelerometer based on glass-silicon composite wafers. Unlike the ordinary micro-electro-mechanical systems (MEMS) accelerometers, the entire structure of the accelerometer, includes the mass, the springs, and the composite wafer. The composite wafer is expected to serve as the electrical feedthrough and the fixed capacitance plate at the same time, to simplify the fabrication process, and to save on chip area. It is manufactured by filling melted borosilicate glass into an etched silicon wafer and polishing the wafer flat. A sensitivity of 51.622 mV/g in the range of ±5 g (g = 9.8 m/s2), a zero-bias stability under 0.2 mg, and the noise floor with 11.28 µg/√Hz were obtained, which meet the needs of most acceleration detecting applications. The micromachining solution is beneficial for vertical interconnection and miniaturization of MEMS devices.

With the miniaturization of micro-electro-mechanical system (MEMS) gyroscopes, it is necessary to study their nonlinearity. The phase-frequency characteristics, which affect the start-up time, are crucial for guaranteeing the gyroscopes' applicability. Nevertheless, although the amplitude-frequency (A-f) effect, one of the most obvious problems in nonlinearity, has been well studied, the phase response of nonlinear gyroscopes is rarely mentioned. In this work, an elaborate study on the characteristics and locking process of nonlinear MEMS gyroscopes is reported. We solved the dynamic equation using the harmonic balance method and simulated the phase-locked loop (PLL) actuation process with an iterative calculation method. It was shown that there existed an apparent overhanging and multi-valued phenomenon in both the amplitude-frequency and phase-frequency curves of nonlinear gyroscopes. Meanwhile, it was ascertained by our simulations that the locking time of PLL was retarded by the nonlinearity under certain conditions. Moreover, experiments demonstrating the effect of nonlinearity were aggravated by the high quality factor of the drive mode due to the instability of the vibration amplitude. A nonlinear PLL (NPLL) containing an integrator was designed to accelerate the locking process. The results show that the start-up time was reduced by an order of magnitude when the appropriate integral coefficient was used.

提出了用氧化铟锡(ITO)作为掩膜对硅与玻璃的键合片进行深硅刻蚀的工艺.ITO薄膜采用直流溅射工艺常温生长,避免了传统等离子体化学气相沉积(PECVD)方式生长氧化硅掩膜高温对器件制备造成的影响.对不同的ITO薄膜图形化方式进行了研究,结果表明垂直或正锥形台阶的光刻胶剥离工艺制备的ITO薄膜边缘光滑,尺寸误差小,是实现ITO薄膜图形化的理想方式.进一步研究了基于ITO掩膜的键合片深硅刻蚀能力,在硅刻蚀深度达到150 μm时,掩膜只消耗了5.66 nm,刻蚀选择比高达26 500∶1,没有发现微掩膜效应.因此利用ITO掩膜实现键合片的深硅刻蚀,掩膜的生长和图形化都在常温下进行,特别适合基于硅玻璃(SOG)键合刻蚀工艺的MEMS器件制备.