The one-dimensional side gate based on graphene edges shows a significant capability of reducing the channel length of field-effect transistors, further increasing the integration density of semiconductor devices. The nanoscale electric field distribution near the edge provides the physical limit of the effective channel length; however, its imaging under ambient conditions is still lacking, which is a critical aspect for the practical deployment of semiconductor devices. Here, we used scanning nitrogen-vacancy (N-V) microscopy to investigate the electric field distribution near edges of single-layer graphene. Realspace scanning maps of photocharged floating graphene flakes were acquired with a spatial resolution of approximately 10 nm, and the electric edge effect was quantitatively studied by analyzing the N-V spin energy-level shifts due to the electric Stark effect. Since the graphene flakes are isolated from external electric sources, we brought out a theory based on the photothermionic effect to explain the charge transfer from graphene to the oxygen-terminated diamond probe with a disordered distribution of charge traps. Real-time tracing of electric fields detected the photothermionic emission process and the recombination process of the emitted electrons. This study provides a perspective for graphene-based one-dimensional gates and optoelectronics with nanoscale real-space imaging and, moreover, offers a method to tune the chemical environment of diamond surfaces based on optical charge transfer.

Single-element polarization in low dimensions is fascinating for constructing next-generation nanoelectronics with multiple functionalities, yet remains difficult to access with satisfactory performance. Here, spectroscopic evidences are presented for the spontaneous electronic polarization in tellurium (Te) films thinned down to bilayer, characterized by low-temperature scanning tunneling microscopy/spectroscopy. The unique chiral structure and centrosymmetry-breaking character in 2D Te gives rise to sizable in-plane polarization with accumulated charges, which is demonstrated by the reversed band-bending trends at opposite polarization edges in spatially resolved spectra and conductance mappings. The polarity of charges exhibits intriguing influence on imaging the moiré superlattice at the Te-graphene interface. Moreover, the plain spontaneous polarization robustly exists for various film thicknesses, and can universally preserve against different epitaxial substrates. The experimental validations of considerable electronic polarization in Te multilayers thus provide a realistic platform for promisingly facilitating reliable applications in microelectronic devices.