Bi_2O_3:BaF_2 and BiF_3:BaF_2 crystals were prepared by TGT(temperature gradient method).Near-infrared broadband luminescence was observed in as-grown Bi_2O_3:BaF_2 crystal.The emission band peaks at 96 1 nm in the range of 850- 1250 nm,with FWHM about 202 nm.The luminescence of Bi~(2+) and Bi~(3+) ions in the visible region was observed in BiF3: BaF_2 crystal,but there was no near-infrared emission.Then the BiF_3:BaF_2 crystal was exposed to γ-rays in order to reduce valence states of Bi ions.Near-infrared broadband luminescence was observed in γ-irradiated BiF_3:BaF_2 crystal. The emission band peaks at 1135 nm in the range of 850-1500 nm,with FWHM about 192 nm.The mechanisms of near infrared luminescence in Bi_2O_3:BaF_2 crystals and γ-irradiated BiF_3:BaF_2 crystals were discussed.

The absorption, excitation, and ultrabroadband near-infrared luminescence spectra of Bismuth were investigated in H(2)-annealed and gamma-irradiated Bi:alpha-BaB(2)O(4)(alpha-BBO) single crystals, respectively. Energy-level diagrams of the near-infrared luminescent centers were fixed. The electronic transition energies of near-infrared active centers are basically consistent with the multiplets of free Bi(+) ions. The minor difference of the energy-level diagrams of Bi(+) ions in H(2)-annealed and gamma-irradiated Bi:alpha-BaB(2)O(4) crystals can be ascribed to the difference of the local lattice environments. The involved physical and chemical processes were discussed. The effect of Ar-, air-annealing and electron-irradiation on Bi:alpha-BaB(2)O(4) crystal were also investigated.

Spectroscopic properties of Bi-doped SrB(4)O(7) glasses, sintered compounds, polycrystalline materials, and single crystals were investigated. Broadband near-infrared luminescence was realized in Bi-doped SrB(4)O(7) glasses with basicity and polycrystalline materials with non-bridging oxygens. In Bi:SrB(4)O(7) single crystals, only visible luminescence of Bi(3+) and Bi(2+) was observed, but no near-infrared. The rigid three-dimensional network of SrB(4)O(7) crystal is proved to be unfavorable for accommodation of Bi(+) ions.

Spectroscopic properties of as-grown and gamma-irradiated undoped and Bi-doped alpha-BBO (BaB(2)O(4)) single crystals were investigated. Bi(2+) and color centers in Bi:alpha-BBO crystals were investigated to be nonluminescent in the near-infrared (NIR) region. Broadband NIR luminescence at 1139 nm with a FWHM of 108 nm and a decay time of 526 mus was realized in Bi:alpha-BBO crystal through gamma irradiation. Bi(+) was attributed to be responsible for the NIR emission, which can be bleached by thermal annealing. The involved physical processes in Bi:alpha-BBO crystal during the courses of irradiation and heat annealing were tentatively established.

: Spectroscopic properties of as-grown and gamma-irradiated undoped and Bi-doped alpha-BBO (BaB(2)O(4)) single crystals were investigated. Bi(2+) and color centers in Bi:alpha-BBO crystals were investigated to be nonluminescent in the near-infrared (NIR) region. Broadband NIR luminescence at 1139 nm with a FWHM of 108 nm and a decay time of 526 mus was realized in Bi:alpha-BBO crystal through gamma irradiation. Bi(+) was attributed to be responsible for the NIR emission, which can be bleached by thermal annealing. The involved physical processes in Bi:alpha-BBO crystal during the courses of irradiation and heat annealing were tentatively established.