The disease ileal perforation is a frequently encountered surgical emergency in developing countries [1]. Typhoid fever is the most common cause for this dreaded complication;tuberculosis, trauma and non-specific enteritis follow closely [2]. The incidence of perforation in various studies in typhoid fever has been reported to be between 0.8% to 18% [3]. The compromised patients of perforation peritonitis due to typhoid fever are best managed with faecal diversion by performing an ileostomy. The other indications of faecal diversion include inflammatory bowel disease, familial adenomatous polyposis, colorectal cancer, non-gastro intestinal obstructing tumours, pelvic sepsis, trauma, diverticulitis, fistula, ischaemic bowel disease, radiation enteritis, pseudomembranous enterocolitis, faecal incontinence and paraplegia [4]. The standard treatment after diagnosis of secondary peritonitis due to hollow viscous perforation is resuscitation followed by laparotomy. The ileal perforation is either closed primarily, or resection and anastomosis of the small bowel is performed, or a diverting stoma is created depending on the site and number of perforations, the severity of peritonitis and the general condition of the patient [5]. The ileostomy serves the purpose of diversion, decompression and exteriorization. A primary ileostomy has been found to be useful in decreasing the morbidity and mortality especially in moribund patients or those with delayed presentation, where it has proved to be a lifesaving procedure [6]. However, ileostomies may result in a significant number of complications as well. The most common complication of ileostomy is peristomal skin irritation leading to skin excoriation, followed by fluid and electrolyte imbalance and nutritional depletion [7]. Other complications post-ileostomy are bleeding, ischaemia, obstruction, prolapse, retraction, stenosis, parastomal hernia, fistula, residual abscess, wound infection and incisional hernia. In addition, an ileostomy is also known to adversely affect the patient's quality of life due to physical restrictions and psychological problems [8]. An ileostomy can be performed as an end ileostomy or loop ileostomy, and both techniques have their own pros and cons. Different authors in the past have compared the results of the two types of ileostomies performed for inflammatory bowel disease and colorectal cancer. Based on their findings, some authors prefer a loop ileostomy whilst others recommend an end ileostomy as a temporary measure for faecal diversion [9-11]. However, these studies are from western countries and include elective procedures whereas patients with perforation peritonitis present as a surgical emergency and their parameters are entirely different. The temporary diverting ileostomy [end or loop ileostomy] is performed as a life saving measure in such cases and existing literature is silent on comparison of these two procedures in perforation peritonitis.

Background: The en bloc excision of primary tumor along with locoregional lymphadenectomy is the standard curative surgical treatment for rectal cancer. The development of local or locoregional recurrence is primarily due to sub-optimal surgical resection. The current standard technique of total mesorectal excision does not have satisfactory results in low rectal cancers. It has been stated that with the introduction of lateral pelvic lymph node dissection, local control has improved and survival is better in comparison to Western reports of surgery alone. We hypothesized that the rate of local recurrence in lower rectal cancers with LLND would be less if groups are balanced by minimization methods.

PURPOSE:Phyllodes tumor (PT) is a rare fibroepithelial neoplasm comprising <1% of all breast tumors. Clinical spectrum ranges from benign (B), borderline (BL), and locally recurrent to malignant (M) and metastatic type. The aim of our study was to analyze the clinicopathological factors, compare treatment options, and evaluate outcome in patients with PT. METHODS:We retrospectively reviewed 162 women with PT. The surgical intervention varied from simple excision (lumpectomy)/wide local excision (WLE) in benign cases to simple/modified radical or radical mastectomy (SM/MRM/RM) in malignant and recurrent tumors. RESULTS:Out of 162 patients, B, BL, and M were 95 (58.64%), 29 (18%), and 38 (23.45%), respectively. Mean age, duration of lump, and size were 38 ± 8 years, 28 ± 10 months, and 12 ± 5 cm, respectively. Recurrence rate with B, BL, and M was 15.78%, 41.37%, and 55.26%, respectively (P = 0.00001). As compared to WLE (22%), SM (23.8%), and MRM/RM (14.2%), recurrence was higher with lumpectomy (48.9%) (P = 0.004). Positive correlation was found between recurrence rate with the size of tumor (P = 0.008) and also number of recurrence with holoprosencephaly (P = 0.047). There was no association between the number of recurrences and size of tumor (P = 0.63). Malignant PT was seen in 38 (24%) and distant metastasis was seen in 7 (18%). Mean duration of follow-up was 42 months. CONCLUSION:WLE with negative margins should be the initial surgery for PT. The role of adjuvant radiotherapy and chemotherapy is uncertain. PT is pathological enigma. Till date, no factors can accurately predict the recurrence and outcome. PT is known for unpredictable behavior and high recurrence rates, hence long-term follow-up is advised.

Studies on evaluation of pollen dispenser on the basis of per cent foragers touching  the floor of pollen dispenser with front strip of different sizes showed that the higher percentage of foragers (53.67) touched the floor of pollen dispenser with 2 cm height of front strip. The data regarding recovery of pollen from 100 flowers of Red Gold cultivar of apple varied from 28.2 to 34.2 mg with an average of 32.17 mg. Dehisced apple pollen grains can be stored up to 7 months at 40C with optimum viability. The observations on the time taken to dispense pollen grains from pollen dispenser attached to the hive entrance indicated that A mellifera foragers dispensed 2 g of pollen in 1 to 2 h  under open field conditions and in 3 to 4 h under caged conditions.

Potential evapotranspiration (PET) in the Uttarakhand forests has been estimated using the Modified Prestly-Taylor Method [1]. The estimated PET has been used to determine the actual evapotranspiration (AET) based on the limitation in available water (soil moisture) on the ground. The required meteorological data used in the estimation of ET is obtained from field measurements at three forest sites which includes Deodar (Cedrus deodara), Pine (Pinus roxburghii) and Oak (Quercus spp.) forests located within an area of five km radius in the district Tehri Garhwal. The meteorological data including daily sun shine hours, humidity, air temperature and soil moisture for one year from July, 2005 to June, 2006 were recorded and used in the estimation of ET. The daily average ET was highly influenced by the sunshine hours and soil moisture. A significant seasonal variation in the ET is observed. The results of seasonal variation in ET can be used as an indicator of possible forest fire events and helpful in prevention and management of forest fire in the hilly areas of Uttarakhand state of India.

A 32nm logic technology for high performance microprocessors is described. 2nd generation high-k + metal gate transistors provide record drive currents at the tightest gate pitch reported for any 32nm or 28nm logic technology. NMOS drive currents are 1.62mA/um Idsat and 0.231mA/um Idlin at 1.0V and 100nA/um Ioff. PMOS drive currents are 1.37mA/um Idsat and 0.240mA/um Idlin at 1.0V and 100nA/um Ioff. The impact of SRAM cell and array size on Vccmin is reported.

A 32 nm generation logic technology is described incorporating 2 nd -generation high-k + metal-gate technology, 193 nm immersion lithography for critical patterning layers, and enhanced channel strain techniques. The transistors feature 9 Aring EOT high-k gate dielectric, dual band-edge workfunction metal gates, and 4 th -generation strained silicon, resulting in the highest drive currents yet reported for NMOS and PMOS. Process yield, performance and reliability are demonstrated on a 291 Mbit SRAM test vehicle, with 0.171 mum 2 cell size, containing >1.9 billion transistors.

The degree of chemical bond saturation at surfaces can affect dopant activation and transient enhanced diffusion (TED) in silicon during annealing for ultrashallow junction formation. Point defects such as interstitial atoms can more easily combine with unsaturated dangling bonds than with saturated ones. Thus, maintaining an atomically clean surface during annealing greatly increases the annihilation probability. Statistical arguments show that such a surface removes Si interstitials from the underlying solid much faster than dopant interstitials. Simulations for boron and experiments for arsenic show that this effect leads to large and simultaneous improvements in dopant activation and TED. This surface-based method of defect engineering is relatively easy to integrate into a process line, and offers benefits over and above what can be obtained with methods used in parallel such as carbon co-implantation and laser annealing.

Point defects such as vacancies and interstitial atoms serve as primary mediators of solid-state diffusion in many materials. In some cases, the defects encounter surfaces where annihilation can occur. Quantification of annihilation rates presents formidable challenges, since point defect concentrations are typically low and therefore difficult to monitor directly. The present work develops a method for such quantification based upon measurements of diffusional profile spreading of a foreign species, using as an example isotopically labeled silicon implanted into a silicon matrix. Optimal experimental design techniques together with maximum-likelihood estimation indicate that the loss probability for Si interstitials on nitrogen-covered Si(100) lies at 7.1×10−4.

The structure and energetics of charged vacancies on Si(111)-“1×1” are investigated using density functional theory calculations supplemented by estimates of ionization entropy. The calculations predict multiple possible charge states for surface vacancy. The neutral state of the vacancy dominates up to 1200K, but the −1 state dominates above this temperature on real Si(111) surfaces for which the Fermi level lies near the middle of the band gap.

A mechanism is described by which interface electronic properties can affect bulk semiconductor behavior. In particular, experimental measurements by photoreflectance of Si(100)-SiO2 interfaces show how a controllable degree of band bending can be introduced near the interface by ion bombardment and annealing. The resulting electric field near the interface can affect dopant concentration profiles deep within the semiconductor bulk by drastically changing the effective interfacial boundary condition for annihilation of charged interstitial atoms formed during bombardment. Kinetic measurements of band-bending evolution during annealing show that the bending persists for substantial periods even above 1000 degreesC. Unusually low activation energies for the evolution point to a distribution of energies for healing of bombardment-generated interface defects. The findings have significant implications for p-n junction formation during complementary metal oxide semiconductor device processing.

The structure and energetics of charged vacancies on Si(1 1 1)-(7 × 7) are investigated using density functional theory calculations supplemented by estimates of ionization entropy. The calculations predict multiple possible charge states for the unfaulted edge vacancy in the adatom layer, although the −2 state is most stable on real Si(1 1 1) surfaces for which the Fermi level lies near the middle of the band gap.

The present work investigates the structure and energetics of charged vacancies on Si(100)-(2x1) by calculations using density functional theory. The calculations predict multiple stable charge states for all vacancy structures investigated, although the neutral state is most stable for typical Si(100) surfaces. The multiplicity of possible states lends significant support to a hypothesized mechanism for nonthermal illumination influences on surface diffusion. The calculations also show that the +1 state of the upper dimer monovacancy is destabilized by structural relaxations, leading to negative-U properties. Implications of this work for possible artifacts in imaging by scanning tunneling microscopy are discussed.

Experiments employing photoreflectance spectroscopy have uncovered band bending due to electrically active defects at the Si(111)–SiO2 interface after sub-keV Ar+ ion bombardment. The band bending of about 0.5 eV resembles that for Si(100)–SiO2, and both interfaces exhibit two kinetic regimes for the evolution of band bending upon annealing due to defects healing. The healing takes place about an order of magnitude more quickly at the (111) interface, however, probably because of less fully saturated bonding and higher compressive stress.

A theory for estimating ionization entropies of vacancies on semiconductor surfaces is developed, using Si(100)-(2x1) as a specific example. This theory helps to determine the most likely charge state at processing temperatures for a wide variety of semiconductors. For the dominant vacancy type on Si(100)-(2x1) (the divacancy), the most likely charge state shifts from neutral to negative above about 800 K. This transition is likely to affect the manifestation of phenomena such as nonthermal illumination-influenced diffusion.

Continued scaling of ultrashallow junctions in transistor devices raises the possibility that new physical effects connected with surface proximity need to be incorporated into models for transient enhanced diffusion (TED). Recently this laboratory suggested that surface Fermi level pinning could transform the effective surface boundary condition for interstitial incorporation from that of a fairly good sink to that of a good reflector. Deepened junctions and possibly dopant pileup near the interface were suggested to be likely consequences. The present work offers experimental evidence of such pinning at a Si-SiO2 interface just after annealing that persists at least up to several hundred degrees.