The intrinsic time characteristics of a double-barrier parabolic well structure are studied numerically. One-dimensional structures with AlAs and AlGaAs barrier (and superlattice) material are investigated, and two models are considered: the actual microstructure (graded-superlattice) model and the parabolic-potential-well-model. Time-independent results such as quasi-energy levels and their width...

A quantum-mechanical simulation method of charge transport in very small semiconductor devices is presented that is based on the numerical solution of the time-dependent Schrodinger equation (coupled self-consistently to the Poisson equation to determine the electrostatic potential in the device). Carrier transport is considered within the effective mass approximation, while the effects of the ele...

The temporal development of the wave function within a double-barrier quantum well is studied by numerically solving the time-dependent Schrödinger equation. One-dimensional AlGaAs-GaAs-AlGaAs and AlAs-GaAs-AlAs structures are considered in this study. The build-up time and the decay constant of the resonant probability amplitude have been computed as functions of the system parameters. In general, these times are considerably different in magnitude. The amplitude of the wave function trapped inside the well is found to depend crucially on the initial energy spread. The results are in good agreement with those of a recent photoluminescence experiment.

The preliminary results of a numerical simulation of charge transport in a submicron size GaAs MESFET is described.