We present high-performance passive silicon nitride (SiN) components, and tunable silicon Ring-Assisted MachZehnder Interferometer (RAMZI) interleaver. Hardware performance statistics substantiate the mass manufacturability of the SiN building-blocks, and the tuning algorithm proves efficient in tuning the RAMZI filter.

We demonstrate versatile Ge PDs in a 300 mm CMOS SiPh foundry flow, enabling >130 GHz·A/W bandwidth-responsivity product, high-power handling (10 mW, >42 GHz), and ultra-compact low-capacitance (~1 fF)/low-dark-current (<5 nA) designs for diverse datacom and CPO-era receivers.

We present optimized Ge shaping techniques that significantly reduce the back reflection of O-band Ge-on-Si photodetectors, achieving an optical return loss of -36dB in conjunction with ~60GHz 3-dB-EO-bandwidth, 0.95A/W responsivity and average dark current <30nA.

We report the successful demonstration of monolithically integrated O-band Vgroove-based multi-tip SiN edge couplers, achieving 0.5/0.9dB insertion losses for two polarizations at 1310 nm, >280mW power handling and <-40dB optical-return-loss, surpassing IEEE 802.3 performance standards.

We present recent advancements in high-performance and versatile I/O solutions on Fotonix™, a 300-mm monolithic CMOS-integrated SiPh foundry platform, highlighting key innovations in high-power V-groove fiber attach, alternative pluggable coupler and hybrid laser attach [1]–[8].

We demonstrate mass-manufacturable, ultra-fast, high-power Ge-PIN-PDs in a 300-mm CMOS silicon photonics foundry, achieving> 135GHz bandwidth, 0.96A/W responsivity, −36dB ORL, and high-quality 120Gb/s NRZ and 240Gb/s PAM4 eyes at 1mA photo current without TIA.

We demonstrate monolithically integrated O-band Vgroove-based multi-tip SiN edge couplers with 0.5/0.9 dB insertion losses for two polarizations, >280mW power handling and <-40dB back reflection at 1310 nm.

We present advanced Ge shaping techniques for O-band Ge-on-Si photodetectors, achieving -36 dB optical return loss, ~60 GHz 3-dB EO bandwidth, 0.95 A/W responsivity, and average dark current below 30 nA.

This paper reviews recent advancements in GlobalFoundries (GF) Fotonix TM technology: a 300-mm monolithic CMOS silicon photonics (SiPh) foundry platform. The discussion encompasses photonic and CMOS device libraries, advanced packaging, PDK compact models, reliability, and system-level demonstrations.

We demonstrate low-loss silicon nitride passive optical components including straight and bend waveguides, 1×2MMI, 2×2MMI, directional-coupler and waveguide crossings on a monolithic silicon photonics platform. Hardware performance statistics substantiate the mass manufacturability of the building-blocks.

We experimentally demonstrated V-groove-based self-aligned SiN edge coupler (EC) on a monolithic CMOS-SiPh platform. <0.6/0.8 dB TE/TM SMF-EC transmission efficiency, in conjunction with <-39 dB back reflection and >520 mW power handling capability were achieved.

We demonstrate a waveguide-integrated germanium-on-silicon avalanche photodiode in a monolithic silicon photonics technology, with TE responsivity of 26 A/W at 1310 nm wavelength at −5 V operating bias with a 3-dB bandwidth of > 30 GHz. © 2022 The Author(s)

A comprehensive set of SiN building blocks was demonstrated on a monolithic SiPh platform. Low-loss SiN waveguides (<0.35dB/cm), Si-SiN transitions (0.026dB), efficient polarization splitters/rotators, and compact ring WDM filters were realized at O-band.

We report a hybrid flip-chip-integrated laser attach technology on a monolithic SiPh platform. Efficient laser-to-PIC butt-coupling with optical power up to 11dBm was demonstrated through a combination of precise mechanical stops and optical alignment features.

We review recent progress in loss reduction of Si and SiN waveguides in GLOBALFOUNDRIES 300mm monolithic Si photonics platform. Primary challenges to creating low-loss CMOS integrated photonic components are highlighted and potential solutions are outlined.

Optical communication has recently seen a resurgence driven by the demand for high-speed networking. Silicon Photonics (SiPh) has gained recent interest as a low cost and high volume method for creating photonic integrated circuits (PIC). PICs create new challenges for manufacturability since the devices require optical probing in addition to RF probing. This paper discusses a low cost method for aligning an optical fiber to a vertical grating coupler for wafer optical probing using a pre-defined device layout. This method is suitable for high volume wafer manufacturing. The alignment takes 0.5-1.5s and is reliable across multiple products and designs.

GLOBALFOUNDRIES' monolithic 45nm CMOS-Silicon Photonics 300mm high-volume manufacturing platform based on 45nm RF technology node, and optimized for high performance and low power short-reach optical interconnects for on-chip and chip-to-chip applications will be discussed.

We report the hybrid flip-chip integration of III-V laser on a monolithic silicon photonics (SiPh) platform. Wafer-scale laser attach was demonstrated with the assistance of a laser cavity on a Si substrate. The attach process was accomplished through precise optical and mechanical alignment features on the laser and SiPh wafer. Efficient laser-to-photonic integrated circuit (PIC) butt-coupling with optical power up to 11 dBm was achieved through a combination of precise mechanical stops and optical alignment features. Key laser performance metrics such as mode hopping and relative intensity noise (RIN) vs. reflectivity were also studied. The impact of laser-PIC alignment on the coupling efficiency was studied through comprehensive two-dimensional (2D) and three-dimensional (3D) numerical modeling. Simulations were also performed to explore different coupler designs for optimized laser coupling performance.

The development of a high throughput, accurate, and cost efficient inline optical test system is a key challenge to mass manufacturing of silicon photonics. For our Silicon Photonic technologies, we developed a fully automated wafer level optical test system for both, active and passive optical testing. The measured insertion loss of fiber grating couplers is repeatable within 1.1dB (3 sigma). A unique forward and reverse alternative test method is designed to extract photodetector responsivity.

The development of a high throughput, accurate, and cost efficient inline optical test system is a key challenge to mass manufacturing of silicon photonics. For our Silicon Photonic technologies, we developed a fully automated wafer level optical test system for both, active and passive optical testing. The measured insertion loss of fiber grating couplers is repeatable within 1.1dB (3σ). A unique forward and reverse alternative test method is designed to extract photodetector responsivity.