Large-area commercialization of perovskite solar modules remains limited by cost and scarcity of indium-based transparent electrodes. Here, we report a scalable aluminum-doped zinc oxide (AZO) fabricated by spatial Atomic Layer Deposition (ALD) that achieves record electrical performance through atomic-level dopant regulation. By controlling the Al:Zn cycle ratio, Al incorporation within 2.4%-4.2% was precisely tuned to optimize conductivity. Systematic experiments and calculations reveal that low Al concentrations favor substitutional incorporation, increasing carrier, while higher concentrations induce interstitial defects that contribute to carrier and enhance scattering, defining an optimum doping window. The AZO exhibits a sheet resistance of 3.3 Ω sq-1, lower than commercial indium tin oxide (ITO, 5.8 Ω sq-1), with 90% transmittance and 55% haze. Spatial ALD ensures uniform deposition across 900 cm2 substrates (2.36% thickness variation, 4.62% sheet-resistance variation), enabling 18.50% efficiency in large-area modules, the highest reported to date. This approach offers a manufacturing-compatible route toward indium-free, high-conductivity electrodes for scalable devices.

Understanding defect formation mechanisms in selective laser melting is essential for enhancing product quality. This study investigates the microstructural evolution and defect formation mechanisms in Ti-6Al-4V (TC4) alloy under two processing conditions: repeated remelting and varying energy density (ED). The results show that during multiple remelting cycles, the laser does not fully penetrate the powder layer, leaving persistent defects at the bottom. Furthermore, repeated remelting concentrates excessive energy at the top of the powder layer, thereby promoting defect generation. Consequently, a large number of unmelted defects form at both the top and bottom of the powder layer. By contrast, increasing the ED enlarges the melt pool. However, excessive energy input simultaneously causes grain coarsening and elevates grain boundary energy, ultimately leading to solidification cracking. By reducing energy input while ensuring complete melting of the powder, this study demonstrates that defect formation can be suppressed under both processing conditions. This results in effective grain refinement. Consequently, a high-performance TC4 alloy with a synergistic strength-ductility improvement is obtained.

For the J-R type electrostatic chuck, the dielectric layer must have a volume resistivity in the range of 108-1012 S2 cm. The insulating properties of AlN ceramic make it unsuitable for the dielectric layer of JR-type electrostatic chucks. Therefore, it is necessary to adjust the volume resistivity of AlN ceramics to meet the requirements of practical applications. In this study, the effects of sintering temperature and Y2O3 doping content on the properties of AlN ceramics were systematically investigated. The optimum doping ratio and sintering process for electrostatic chuck applications were determined by analysing the relative density, porosity, volume resistivity and electrostatic force of AlN samples. The phase composition, microstructure and elemental distribution were analysed using X-ray diffraction, electron probe microanalysis, energy dispersive spectroscopy and thermal conductivity measurements to elucidate the mechanisms of electricity conduction and heat transport. The results show that the addition of Y2O3 effectively reduces both the resistivity at room temperature and the sintering temperature of AlN ceramics. The samples sintered at 1800 degrees C and 1900 degrees C exhibited a relative density above 96 %, porosity below 2 % and resistivity in the range of 108-1012 S2 cm. Considering cost efficiency and performance, a sintering temperature of 1800 degrees C and a Y2O3 doping content of 1.5 wt% were determined as optimal conditions. Under these conditions, the AlN ceramic sample achieved a high relative density of 98.7 %, a low porosity of 0.7 %, a volume resistivity of 4.2 x 109 S2 cm and a thermal conductivity of 139 W/m & sdot;K. The electrostatic forces reached 145 g/cm2 at 300 V and 321 g/cm2 at 500 V. By simulating the interaction between the dielectric layer and the silicon wafers under applied voltage, the study showed that the J-R force could achieve stable adsorption between the electrostatic chuck and the silicon wafer within the specified time.

The Sr element in Sr-containing perovskites tends to segregate, resulting in structural instability of these materials, especially in a CO2-rich atmosphere. This study introduces a structurally robust high-entropy F-doped perovskite La0.2Pr0.2Sm0.2Sr0.2Ca0.2FeO2.9-delta F0.1 (F-LPSSCF), specifically engineered for use as an electrode in CO2 electrolysis and power generation. The high entropy nature of this material confers both chemical and thermal stability. Additionally, F-doping significantly improves the chemisorption and binding affinity of CO2 to the perovskite. When employed as an electrode in a solid oxide electrolysis cell (SOEC) for CO2 electrolysis, FLPSSCF exhibits remarkable CO2 conversion efficiency, exceeding that of La0.2Pr0.2Sm0.2Sr0.2Ca0.2FeO3-delta (LPSSCF). The F-LPSSCF-based cell also exhibited long-term stability, maintaining its performance for over 300 h at 800 degrees C and 1.2 V. This remarkable performance is attributed to the improved interaction between F-LPSSCF and CO2, as confirmed by DFT calculations. In solid oxide fuel cell (SOFC) mode, the performance of the FLPSSCF-based cell outperformed that of the LPSSCF-based cell. This study offers a promising approach for the development of durable electrodes aimed at CO2 electrolysis via SOECs and power generation via SOFC.

The structural stability of perovskite materials is often compromised by metal exsolution from the B-site. In this study, we developed a Fe-Ni alloy anchored perovskite derived from the reduction of Pr0.5Sr0.5Cr0.1Fe0.6Ni0.2Mo0.1O3-delta (PSCFNM). The introduction of high-valence Mo significantly enhances the structural stability of the perovskite framework while simultaneously modulating its electronic properties. This carefully engineered multivalent environment creates an interconnected electron transfer network through synergistic redox couples (Fe4+/3+/2+/0, Ni3+/2+/0, Cr6+/3+, and Mo6+/5+). We systematically evaluated the electrochemical performance and reaction mechanisms of symmetric cells employing this material as both electrodes under three distinct CO2 electrolysis modes: conventional electrolysis, H2-and CH4-assisted electrolysis, revealing critical insights into the synergistic effects between operational parameters and cell performance. The CH4-assisted configuration demonstrates remarkable advantages over conventional approaches, achieving an 83.8 % reduction in electrical energy requirements at 0.3 A cm-2 current density while simultaneously enabling valuable syngas production. These findings provide fundamental understanding of the complex thermochemical-electrochemical interactions in CH4-assisted SOECs and establish a scientific foundation for optimizing this promising technology for efficient CO2 utilization and energy conversion applications.

Tin dioxide (SnO2) stands out as a promising candidate for the electron transport layer (ETL) in perovskite solar cells (PSCs) due to its remarkable conductivity. As PSCs progress towards commercialization, the scalability of deposition methods, cost-effectiveness, and the seamless integration of various material layers become increasingly crucial, alongside the fundamental efficiency requirements. In this study, we demonstrate largescale deposition of SnO2 film with low thickness non-uniformity of 2.36 % via Spatial Atomic Layer Deposition (SALD), offering a significant advantage by enabling high-throughput production of large-area films at atmospheric pressure. By exploiting the varying reactivity of oxygen precursors and modulating the flow to control oxygen vacancy defects, SnO2 film, deposited at 100 degrees C with Tetrakis(dimethylamino)tin (TDMASn) and H2O2, achieved a high mobility of 19.4 cm2 V- 1 s- 1 . The 400 cm2 perovskite solar modules (PSMs) with optimized SnO2 ETL achieved a high power conversion efficiency (PCE) of 19.35 %, marking a notably high PCE of inverted PSCs with such a large area to date. This exceptional performance stems from the excellent uniformity and mobility of the SALD-deposited SnO2 ETL, highlighting the potential of SALD in future PSM fabrication.

Lithium (Li) dendrites form during fast charging due to sluggish alloying kinetics, causing poor cycling stability and safety risks in silicon (Si)-based lithium-ion batteries (LIBs). Here, we proposed a contact lithiation-assisted alloying mechanism to accelerate Si anode kinetics. Regulating Li deposits from a loose dendritic form to a dense, adherent layer with enhanced Li diffusion kinetics facilitates contact lithiation with Si, ensuring a fast reaction rate and high Li utilization of the Li deposits, thereby substantially improving the fast-charging performance of the Si anode. This mitigates dendritic Li plating and the accumulation of inactive Li species on the electrode surface. Decorating Si particles with ultra-fine (similar to 10 nm) uniformly distributed Ag nanodomains facilitates conformal Li plating on the electrode surface, enabling in situ contact lithiation and faster alloying kinetics. The Si@Ag electrode exhibited a high average Coulombic efficiency (CE) of 99.2% over 300 cycles at 3 C, compared to similar to 96.4% for the bare Si electrode. An Ah-level LiNi0.Co-6(0).Mn-2(0).O-2(2).

Laser powder bed fusion (LPBF) combined with liquid silicon infiltration (LSI) holds promise for fabricating intricate SiSiC components. However, its suitability for producing SiC components without free silicon, crucial for acidic or alkaline resistance, remains uncertain. In this study, SiC components were fabricated through successive processes of LPBF, polycarbosilane impregnation (PI), carbonization, LSI, and acid etching using granulated and nongranulated SiC powders. Their properties were compared systematically. The results showed that PI treatment significantly improved the performance of samples made from non-granulated SiC; the bulk density and compressive strength after pyrolysis increased by 33 % and 325 %, respectively, and the bending strength after LSI increased by 26.2 %. These samples also exhibited a higher strength retention after acid etching. In contrast, PI treatment did not benefit the granulated SiC samples. Further analysis suggested that these differences stem from the distinct particle shapes and surface microstructures of granulated and nongranulated SiC, highlighting the need for process optimisation tailored to different SiC raw materials.

Silicon carbide (SiC) ceramic lattice structures (CLSs) hold significant potential for use in structural components and optical mirrors in space exploration due to their light weight, high strength, and excellent dimensional stability. However, they face challenges such as poor curing performance and weak mechanical strength during the digital light processing (DLP) additive manufacturing process. In this study, SiC@Al2O3 powder was prepared, resulting in a 21 % reduction in absorptivity compared to bare SiC powder. The ceramic paste derived from this powder achieved a curing thickness of up to 80 mu m, exhibited a reduced over-curing width, and demonstrated a 75 % improvement in stability compared to bare SiC paste. Consequently, high-quality triply periodic minimal surfaces (TMPS) structured SiC@Al2O3 CLSs green bodies were successfully fabricated. By integrating precursor impregnation pyrolysis with the reaction melting infiltration (PIP-RMI) post-treatment densification method, SiC@Al2O3/Si CLSs were produced, exhibiting superior mechanical properties with low dimensional shrinkage. At 30 % volume fraction, the specific compressive strength of the primitive-TPMS SiC@Al2O3/Si CLSs reached 24.79 MPa. This study presents an effective method for fabricating SiC-based CLSs and establishes a foundation for the optimization of SiC ceramic fabrication processes.

The resistivity of the dielectric layer material of a Johnsen-Rahbek (J-R) electrostatic chuck is generally between E8 and E12 omega & sdot;cm, while that of pure alumina ceramic is more than E15 omega & sdot;cm. Therefore, it is necessary to regulate the resistivity of the alumina ceramic for use as a dielectric layer material for a J-R-type electrostatic chuck. An electrostatic chuck requires a uniform and controllable surface temperature on the silicon wafer. Therefore, there is a certain requirement for the thermal conductivity of the dielectric layer.In this experiment, Al2O3 ceramics with different TiO2 contents (ranging from 0.08 to 3.6 wt%) were used as the research system and sintered at 1550 degrees C in a reducing sintering atmosphere. The obtained samples showed electrical resistivity from E9 to E14 omega & sdot;cm and thermal conductivity from 26 to 37 W/m & sdot;K. The effects of Al2O3 ceramics with TiO2 on the phase composition, microstructure, relative density, electrical conductivity, and thermal conductivity were systematically studied, along with the relationship between the temperature and electrostatic adsorption force J-R and the resistivity of the sample. The addition of 1.2 wt% TiO2 gave the Al2O3 sample better overall performance; its relative density was up to 97.88 %, resistivity was reduced to 7.09 x 109 omega cm, thermal conductivity was 27.211 W/m & sdot;K, and the electrostatic adsorption forces at 300 and 500 V/mm were up to 119 and 331 gf/cm2, respectively. The samples were primarily used as dielectric layers of the elec-trostatic chuck. By simulating the electrostatic adsorption between the dielectric layer and silicon wafer under an external voltage, the J-R force of stable adsorption between the electrostatic chuck and the silicon wafer was realised.

AlN ceramics exhibit good physical and chemical properties and are ideal materials for the dielectric layer of electrostatic chucks. However, they cannot generate a strong J-R-type electrostatic adsorption force because of their high resistivity. Therefore, adding other substances is necessary to regulate the electrical properties and enable their application. In this study, AlN ceramics were prepared using hot-pressed sintering with 0.2 wt% CaO as an additive at a sintering temperature range of 1700-1900 degrees C. The effects of CaO doping on the phase composition, microstructure, electrical properties, and thermal conductivity of the AlN ceramics were systematically investigated. The addition of CaO not only enhanced the sintering process of the AlN ceramics, but also significantly reduced the electrical resistivity and increased the thermal conductivity. The relative density of CaO-doped AlN ceramics reached 98.88 % at 1700 degrees C, with a thermal conductivity of 81.51 W m- 1 center dot K-1. X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and AC impedance spectroscopy were used to analyse the impurities and defects in the AlN ceramics. The lattice parameters and fitting grain resistance indicated that the CaO-doped AlN presented a higher lattice oxygen concentration, increasing the concentration of Al vacancies and electrons. Moreover, the level of dissolved oxygen could be controlled by altering the sintering temperature, resulting in AlN ceramics with electrical resistivity ranging from 8.1 x 106 to 1.7 x 1012 Omega cm. Further research was conducted to investigate the effect of the electrical resistivity of AlN ceramics on the J-R-type electrostatic adsorption force, and it was found that AlN ceramics with a specific resistivity of 109 Omega cm exhibited the highest electrostatic adsorption of 351.7 g/cm2.

A solid-electrolyte interphase (SEI) with high stability and high Li+ conductivity is highly desirable for Si-based lithium-ion batteries with high energy density and superior fast charging capability. Here, we proposed constructing a superior SEI by regulating the interaction between electrolyte components and anode surfaces to achieve the above goal. With combined experimental and theoretical studies, we demonstrated that the P-based layer could selectively adsorb fluoroethylene carbonate (FEC, a common electrolyte solvent) to form a robust, thin, and dense Li3P/LiF-dominant SEI with high ionic conductivity on SiOx particles. SiOx with a uniform 6 nm-thick P layer (SiOx@P) delivered excellent electrochemical cycling stability (1050 mA h g-1, 83.3% capacity retention for 1000 cycles at 1.0C). Our Ah-level LiNi0.6Co0.2Mn0.2O2||SiOx@P pouch cell demonstrated stable cycling with a high energy density (410 W h kg-1 and 780 W h L-1 at 0.2C), along with an exceptional fast charging capability. It exhibited the capability to charge up to 86.5% of its capacity within 15 minutes and demonstrated 83.8% capacity retention after 250 cycles at a charging rate of 4C. This achievement offers a unique insight into SEI formation, providing new opportunities to construct an advanced SEI for Si-based anodes toward high energy density fast charging LIBs. We demonstrated the interaction between electrolyte composition and P interphase of Si-based battery anode, and showed its exceptional stability and fast-charging capability by the formation of a robust Li3P/LiF solid electrolyte interphase.

Additive manufacturing (AM) technology enables the creation of a wide variety of assemblies and complex shapes from three-dimensional model data in a bottom-up, layer-by-layer manner. Therefore, AM has revolutionized the modern manufacturing industry, attracting increasing interest from both academic and industrial fields. The Rapid Manufacturing Center (RMC) of the School of Materials Science and Engineering at the Huazhong University of Science and Technology (HUST), one of the earliest and most powerful AM research teams in China, has been engaged in AM research since 1991. Aiming to address the “stuck neck” problems of specific high-strength products for AM, the RMC has conducted full-chain research in the aspects of special materials, processes, equipment, and applications for AM. Moreover, it has formed a multi-disciplinary research team over the past three decades. Relevant research achievements in the AM field include winning five national awards, more than ten first prizes, and more than ten second prizes at the provincial and ministerial levels. The RMC was complimented as “the world's most influential organization in the laser AM field in 2018” by Virtual and Physical Prototyping (an international authoritative magazine of AM). Moreover, their industrialization achievements were evaluated as “having affected countries such as Singapore, South Korea, and the United States” by an international authoritative Wohlers Report on AM. In this study, we first summarize the representative research achievements of the RMC in the AM field. These include the preparation and processing technology of high-performance polymeric, metallic, and ceramic materials for AM; advanced processing technology and software/equipment for AM; and typical AM-fabricated products and their applications. Further, we discuss the latest research achievements in cutting-edge 4D printing in terms of feedstock selection, printing processes, induction strategies, and potential applications. Finally, we provide insights into the future directions of AM technology development: (ⅰ) Evolving from three-dimensional printing to multi-dimensional printing, (ⅱ) transitioning from plane slicing to curved surface slicing to woven slicing, (ⅲ) enhancing efficient formation from dot-line-sheet-volume printing, (ⅳ) shifting from single material to multi-materials AM, (ⅴ) advancing from the multiscale direction of macroscopic–mesoscopic–microscopic structures, (ⅵ) integrating material preparation with forming integration, (ⅶ) expanding from small batch to large batch.

AlN ceramics were prepared by hot-pressing sintering with 0.2 wt% CaO as an additive at a range of sintering temperatures from 1700℃ to 1900℃. The effects of CaO doping on the phase composition, microstructure, electrical properties, and thermal conductivity of AlN ceramics were systematically investigated. The addition of CaO not only enhanced the sintering process of AlN ceramics, but also significantly reduced the electrical resistivity and increased the thermal conductivity. The relative density of CaO-doped AlN ceramics reached 98.88% at 1700°C, with a thermal conductivity of 81.51 W•m-1•K-1. XRD and AC impedance spectroscopy were used to analyze the impurities and defects in AlN ceramics. The lattice parameters and fitting grain resistance indicated that CaO-doped AlN presented a higher lattice oxygen concentration, leading to an increase in the concentration of Al vacancies and electrons. Moreover, the level of dissolved oxygen could be controlled by altering the sintering temperature, resulting in AlN ceramics with electrical resistivity ranging from 8.1×106 Ω•cm to 1.7×1012 Ω•cm. Further research was conducted to investigate the effect of the electrical resistivity of AlN ceramics on the J-R type electrostatic adsorption force, and it was found that AlN ceramics with a specific resistivity of 109 Ω•cm had the highest electrostatic adsorption of 351.7 g/cm2.

Selective laser sintering (SLS) combined with reaction melt infiltration was used to fabricate Si–SiC ceramic matrix composites, and the effects of different concentrations of phenolic resin (PF) on the properties of the SLS green body and carbonized and final Si–SiC samples were investigated. The results showed that the impregnation with PF can increase the bulk density, reduce the porosity of the samples at all stages, and improve the mechanical properties of the reactive bonded samples. The degree of densification and mechanical properties of the sample gradually enhanced with an increase in PF concentration. The main phases of the Si–SiC composites were free Si, α-SiC, β-SiC, plus an extremely small amount of Al–Si alloy, and the SiC and the Si phase contents increased and decreased, respectively, as the concentration of PF increased when measured using Rietveld refinement and image analysis software. The macroscopic properties of the samples improved greatly after precursor infiltration pyrolysis (PIP) treatment with 66.7%vol PF-ethanol solution twice. According to the crystal nucleation-growth theory, it was inferred that the infiltrated PF could provide a certain amount of pyrolytic carbon in the carbonized specimen. During the reaction bonded process, the carbon formed by carbonization pyrolysis first dissolves into the molten Si and reaches saturation. With the further dissolution of carbon, [C] and [Si] in the liquid phase contact each other to form β-SiC nuclei, the nuclei that precipitate at the pore wall position and gradually form a continuous interfacial layer of β-SiC. The β-SiC layer prevents the liquid Si from direct contact with C inside the prefabricated body, therefore, further reactants diffuse through the layer. Finally, the fine crystalline β-SiC grains were fabricated inside the specimen.

SiC reticulated porous ceramic (SRPC) as the key component determined the service life and combustion characteristics of porous burner. The novel multi-layer struts were constructed to synergistically improve the oxidation resistance and infrared radiation of SRPC, including microporous cordierite coating, dense mullite transition layer, SiC skeleton and filling layer. The continuous mullite transition layer significantly improved the resistance to water vapor oxidation of SRPC, also their strength and thermal shock resistance were enhanced because the elimination of strut defects in multi-layer struts. In addition, the microporous cordierite coating generated from the burnt out of pitch increased the burner surface temperature from 764.4 degrees C to 1061.7 degrees C, and obviously reduced the CO/NOx emission due to its improved infrared radiation property. Furthermore, the porous cordierite coating enhanced the heat radiation of SRPC, thus increasing the heating rate of the burner from 29.4 degrees C/min to 33.1 degrees C/min in the process of water heating.

以NH4HCO3和NH4Al(SO4)2为原料,采用沉淀法合成了前驱体碳酸铝铵(AACH),再经热解得到氧化铝粉体,系统研究了热解温度、干燥方式、NH4HCO3与NH4A1(SO4)2物质的量比对前驱体AACH和热解产物氧化铝的影响.结果表明,在NH4HCO3与NH4Al(SO4)2物质的量比为10∶1、无水乙醇置换水干燥AACH、热解温度为1 025 ℃的条件下,可以得到粒径约50 nm、比表面积93.23 m2·g-1、分散性较好的纳米氧化铝粉体.当纳米氧化铝粉体中掺入2.0％TiO2时,在含8％H2的N2气氛下1 550 ℃烧结2 h,可以得到相对密度97.40％、体积电阻率3.47×109Ω·cm的氧化铝陶瓷.

Design and implementation of efficient p‐type transparent conducting (TC) oxides with excellent performance are the global material challenge. The strategy of “chemical modulation of the valence band” triggers the enthusiasm for p‐type TC delafossite CuMO2. However, the low conductivity of previous CuMO2 films obstructs the development of delafossite‐based electronics. Herein, a new p‐type 4d transition metal Rh‐based CuRhO2 film with large‐size is first designed and fabricated by a facile solution method. Room‐temperature conductivity as high as 735 S cm−1 is achieved by substituting 10%Mg in Rh sites. Additionally, the acceptor‐doped CuRhO2 films exhibit high near‐infrared transmittance of 85–60% with low room‐temperature sheet resistance of 4.28–0.18 kΩ sq−1. Furthermore, the electronic structure, electrical transport mechanism, and intra‐band excitation feature for the CuRhO2 film are unveiled. The theoretical and experimental results make a great advance in p‐type TC films and will pave a promising blueprint for future multifunctional opto‐electronic devices.

ZTM ceramics comprising of 0.75ZnAl(2)O(4)-0.25TiO(2) and MgTiO3 at a ratio of 90:10 wt.% are widely used in the field of communication as filters and resonators owing to their excellent microwave dielectric properties. However, the development of such dielectrics with complex structures, as required by microwave devices, is difficult using traditional fabrication methods. In this study, ZTM microwave dielectric ceramics were prepared using the digital light processing (DLP) technology. The influence of the sintering temperature on the phase composition, microstructure, and microwave dielectric properties of ZTM ceramics was investigated. Results showed that with an increase in the sintering temperature, the dielectric constant (epsilon(r)) and quality factor (Q x f) of ZTM ceramics initially increased owing to the increase in the density and diffusion of ions. However, when the sintering temperature was excessively high, the abnormal growth of crystal grains and micropores led to a decrease in epsilon(r) and Q x f. The ZTM ceramics sintered at 1450 degrees C exhibited the optimum microwave dielectric properties (epsilon(r) = 12.99, Q x f = 69 245 GHz, tau(f) = -9.50 ppm/degrees C) owing to the uniform microstructure and a high relative density of 95.02%. These results indicate that DLP is a promising method for preparing high-performance microwave dielectric ceramics with complex structures.

One main challenge of realizing high-energy-density lithium-sulfur batteries is low active materials utilization, excessive use of inert components, high electrolyte intake, and mechanical instability of high-mass-loading sulfur cathodes. Herein, chunky sulfur/graphene particle electrodes were designed, where active sulfur was confined in vertically aligned nanochannels (width ∼12 nm) of chunky graphene-based particles (∼70 μm) with N, O-containing groups. The short charge transport distance and low tortuosity enabled high utilization of active materials for high-mass-loading chunky sulfur/graphene particle electrodes. The intermediate polysulfide trapping effect by capillary effect and heteroatoms-containing groups, and a mechanically robust graphene framework, helped to realize stable electrode cycling. The as-designed electrode showed high areal capacity (10.9 mAh cm-2) and high sulfur utilization (72.4%) under the rigorous conditions of low electrolyte/active material ratio (∼2.5 μL mg-1) and high sulfur loading (9.0 mg cm-2), realizing high energy densities (520 Wh kg-1, 1635 Wh L-1).