SrCu2(BO3)2 (SCBO) is a paradigmatic realization of the Shastry-Sutherland model, hosting geometrically frustrated spin dimers and a variety of quantum magnetic phases and phenomena. Although its magnetic properties have been extensively studied, the high-energy electronic excitations that determine the crystal-field environment and Cu-O hybridization have remained largely unexplored. Here we combine Cu L3-edge resonant inelastic x-ray scattering (RIXS), broadband optical spectroscopy, and electronic-structure calculations to determine the relevant local and interband excitation energy scales in SCBO. RIXS resolves a well-defined manifold of localized Cu2+ d-d excitations between 1.8 and 2.4 eV, whose energies and polarization dependence are well reproduced by multireference quantum-chemistry calculations. In contrast, optical spectroscopy identifies charge-transfer excitations with an absorption onset near 1.2-1.6 eV and a broader higher-energy structure around 4.5 eV, which are qualitatively captured by DFT+U calculations. Taken together, these results define the characteristic energy scales of d-d and CT excitations, offering quantitative benchmarks for computational frameworks and providing essential input for refining superexchange-based magnetic models of this prototypical frustrated quantum antiferromagnet.

In solids, disorder is conventionally regarded as detrimental to coherence. It typically localizes and dampens collective excitations, as exemplified by Anderson localization or the broadening of magnetic modes in systems lacking long-range order. While high-entropy materials are specifically designed to harness disorder and stabilize homogeneous mixed-phase structures that can display unique properties, this same disorder is nonetheless expected to preclude the formation of coherent magnetic excitations. To test the limits of this picture, we selected the antiferromagnetic system YBaCuFeO5, as it features two distinct transition metal atoms with significantly different magnetic moments, rendering its spin dynamics exceptionally sensitive to local atomic ordering. Combining resonant inelastic x-ray scattering and linear spin wave theory, we reveal a surprising paradox: YBaCuFeO5 exhibits an unexpected, entropy-driven mixed phase, in which disorder, rather than reducing the lifetime of the collective excitations, favors coherence. In this mixed phase, the spin waves remain dispersive, markedly distinct from those expected for an ordered ground state, and exhibit well-defined acoustic and optical branches separated by a large optical gap. These results demonstrate that in entropy-stabilized magnets, disorder can favor coherent collective modes previously thought to be exclusive to low-entropy systems.

Abstract On-demand qubit-state initialization is a prerequisite for quantum computation. We demonstrate such a protocol in a device consisting of fixed-frequency transmon qubits pair-wise coupled via tunable couplers — an architecture that is also compatible with the surface code. We use tunable couplers to transfer any undesired qubit excitation to the readout resonator of the qubit, from which this excitation decays into the feedline. In total, the combination of multi-level qubit reset, leakage reduction, and coupler reset takes only 88 ns to complete. Our reset scheme is fast, unconditional, and achieves fidelities above 99%, thus enabling fixed-frequency qubit architectures as future implementations of fault-tolerant quantum computers.

Nanostructured hybrid films composed of tungsten oxide (WO x ) nanoclusters and vertically aligned carbon nanotubes (CNTs) were synthesized through a combination of chemical vapor deposition and supersonic cluster beam deposition. The use of a cluster source enabled the direct fabrication of oxygen-deficient, nonstoichiometric WO x nanoclusters, which decorated the CNT sidewalls with a characteristic "beaded necklace-style" morphology. Electrical resistance measurements under ethanol exposure in ultrahigh vacuum revealed a distinct behavior consistent with n-type conduction, unlike the intrinsic p-type behavior of pristine CNTs and of WO x films. This inversion is linked to the appearance of an interfacial charge transfer from the oxygen vacancies in the defective WO x nanoclusters to the CNTs, which injects electrons into the CNT network and shifting its Fermi level, thereby inverting the conduction type. Notably, this n-type conduction response remained stable even after prolonged air exposure. These results propose a viable approach to achieving air-stable n-type doping in CNT-based nanostructures.

It is advantageous for any quantum processor to support different classes of two-qubit quantum logic gates when compiling quantum circuits, a property that is typically not present in existing platforms. In particular, access to a gate set that includes support for the CZ-, iSWAP-, and SWAP-type families of gates renders conversions between these gate families unnecessary during compilation, as any two-qubit Clifford gate can be executed using at most one two-qubit gate from this set, plus additional single-qubit gates. We experimentally demonstrate that a SWAP gate can be decomposed into one iSWAP gate followed by one CZ gate, affirming a more efficient compilation strategy over the conventional approach that relies on three iSWAP or three CZ gates to replace a SWAP gate. Our implementation makes use of a superconducting quantum processor design based on fixed-frequency transmon qubits coupled together by a parametrically modulated tunable transmon coupler, extending this platform’s native gate set so that any two-qubit Clifford unitary matrix can be realized using no more than two two-qubit gates and single-qubit gates.

The Sn/Si(111)-( 3 x 3)R30 degrees surface, a 2D Mott insulator, has long been predicted and then found experimentally to metallize and even turn superconducting upon boron doping. To clarify the structural, spectroscopic, and theoretical details of that evolution, here we present angle resolved photoemission spectra data supplementing morphology and scanning tunneling measurements. These combined experimental results are compared with predictions from a variety of electronic structure approaches, mostly density functional DFT+U, but not neglecting Mott-Hubbard models, both ordered and disordered. These theoretical pictures address different spectroscopic aspects, including the 2D Fermi surface, the Hubbard bands, etc. While no single picture accounts for all observations at once, the emergent hypothesis compatible with all data is that metallization arises from sub-subsurface boron doping, alternatively to the main standard subsurface boron geometry that would leave the surface insulating. These results advance the indispensable frame for the further understanding of this fascinating system.

For years, itinerant charge carriers in ferroelectric insulators were believed to completely quench ferroelectricity. Recent breakthroughs, however, demonstrated the existence of a novel class of quasi-two-dimensional polar metals with promising applications in nonvolatile electronics and spintronics. Here, by combining temperature-dependent magnetotransport measurements, optical second harmonic generation (SHG), resonant photoemission spectroscopy (ResPES), and X-ray absorption spectroscopy (XAS), we report on the properties of a BaTiO3-based oxide heterostructure, sustaining a persistent polar displacement in the BaTiO3 layer while supporting a two-dimensional electron gas. This suggests that the oxide heterostructure may operate as a polar metal system, paving the way for new developments in oxide-based electronics.

Transition metal oxides, with their wide range of electronic and magnetic properties, offer a remarkable platform for developing future electronics based on unconventional quantum phenomena, such as topological phases. The formation of topologically nontrivial states is linked to crystalline symmetry, spin-orbit coupling, and magnetic ordering. Here, by employing angle-resolved photoemission spectroscopy (ARPES), supported by density functional theory (DFT) calculations, we demonstrated that intrinsic octahedral rotations in SrNbO3 films drive the emergence of non-trivial band topology. Specifically, ARPES reveals and diffraction data confirm the presence of in-phase a0a0c+ octahedral rotation, leading to the formation of topologically protected Dirac band crossings, giving rise to massless fermions in this system. Our study underscores the pivotal role of structural distortions in transition metal oxides, illustrating how they can be strategically harnessed to unlock and stabilize quantum topological states. This approach contributes to the broader understanding of quantum materials and their promising applications in advanced technologies.

We report on the epitaxial growth of Bi _2 WO _6 thin films by Pulsed Laser Deposition using a high-power infrared Nd:YAG laser source. X-ray diffraction investigation confirms that single (00 l )-oriented thin films can be obtained on both LSAT and SrTiO _3 substrates by using a LaNiO _3 adapting layer. Moreover, reciprocal space maps show that the films coherently grow on such substrates with the in-plane lattice parameters fully matching those of the substrates. In-situ x-ray photoemission spectroscopy experiments show that a UHV annealing process makes the film more conductive even though it also affects the Bi:W chemical ratio by reducing the Bi content. Alternately, the conductivity of the films can be effectively tuned by either growing the film in Ar atmosphere or by depositing potassium on its surface without modifying the Bi:W chemical ratio. Our results provide a viable route to synthesize high-quality Bi _2 WO _6 thin films with tailored electronic properties.

Owing to their exceptional mechanical, electronic, and phononic transport properties, compositionally complex alloys, including high-entropy alloys, represent an important class of materials. However, the interplay between chemical disorder and electronic correlations, and its influence on electronic structure-derived properties, remains largely unexplored. This is addressed for the archetypal CrMnFeCoNi alloy using resonant and valence band photoemission spectroscopy, electrical resistivity, and optical conductivity measurements, complemented by linear response calculations based on density functional theory. Utilizing dynamical mean-field theory, correlation signatures and damping in the spectra are identified, highlighting the significance of many-body effects, particularly in states distant from the Fermi edge. Electronic transport remains dominated by disorder and potentially short-range order, especially at low temperatures, while visible-spectrum optical conductivity and high-temperature transport are influenced by short quasiparticle lifetimes. These findings improve our understanding of element-specific electronic correlations in compositionally complex alloys and facilitate the development of advanced materials with tailored electronic properties.

Quantum processors require a signal-delivery architecture with high addressability (low crosstalk) to ensure high performance already at the scale of dozens of qubits. Signal crosstalk causes inadvertent driving of quantum gates, which will adversely affect quantum-gate fidelities in scaled-up devices. Here, we demonstrate packaged flip-chip superconducting quantum processors with signal-crosstalk performance competitive with those reported in other platforms. For capacitively coupled qubit-drive lines, we find on-resonant crosstalk better than -27 dB (average -37 dB). For inductively coupled magnetic-flux-drive lines, we find less than 0.13 % direct-current flux crosstalk (average 0.05 %). These observed crosstalk levels are adequately small and indicate a decreasing trend with increasing distance, which is promising for further scaling up to larger numbers of qubits. We discuss the implication of our results for the design of a low-crosstalk, on-chip signal delivery architecture, including the influence of a shielding tunnel structure, potential sources of crosstalk, and estimation of crosstalk-induced qubit-gate error in scaled-up quantum processors.

Spin-orbit coupling in noncentrosymmetric crystals leads to spin-momentum locking - a directional relationship between an electron's spin angular momentum and its linear momentum. Isotropic orthogonal Rashba spin-momentum locking has been studied for decades, while its counterpart, isotropic parallel Weyl spin-momentum locking has remained elusive in experiments. Theory predicts that Weyl spin-momentum locking can only be realized in structurally chiral cubic crystals in the vicinity of Kramers-Weyl or multifold fermions. Here, we use spin- and angle-resolved photoemission spectroscopy to evidence Weyl spin-momentum locking of multifold fermions in the chiral topological semimetal PtGa. We find that the electron spin of the Fermi arc surface states is orthogonal to their Fermi surface contour for momenta close to the projection of the bulk multifold fermion at the Γ point, which is consistent with Weyl spin-momentum locking of the latter. The direct measurement of the bulk spin texture of the multifold fermion at the R point also displays Weyl spin-momentum locking. The discovery of Weyl spin-momentum locking may lead to energy-efficient memory devices and Josephson diodes based on chiral topological semimetals.

The realization of fault-tolerant quantum computing requires the execution of quantum error-correction (QEC) schemes, to mitigate the fragile nature of qubits. In this context, to ensure the success of QEC, a protocol capable of implementing both qubit reset and leakage reduction is highly desirable. We demonstrate such a protocol in an architecture consisting of fixed-frequency transmon qubits pair-wise coupled via tunable couplers -- an architecture that is compatible with the surface code. We use tunable couplers to transfer any undesired qubit excitation to the readout resonator of the qubit, from which this excitation decays into the feedline. In total, the combination of qubit reset, leakage reduction, and coupler reset takes only 83ns to complete. Our reset scheme is fast, unconditional, and achieves fidelities well above 99%, thus enabling fixed-frequency qubit architectures as future implementations of fault-tolerant quantum computers. Our protocol also provides a means to both reduce QEC cycle runtime and improve algorithmic fidelity on quantum computers.

The two-dimensional electron system (2DES) located at the surface of strontium titanate (STO) and at several other STO-based interfaces has been an established platform for the study of novel physical phenomena since its discovery. Here we report how the interfacing of STO and tetracyanoquinodimethane (TCNQ) results in a charge transfer that depletes the number of free carriers at the STO surface, with a strong impact on its electronic structure. Our study paves the way for efficient tuning of the electronic properties, which promises novel applications in the framework of oxide/organic-based electronics.

Transition metal oxides with a wide variety of electronic and magnetic properties offer an extraordinary possibility to be a platform for developing future electronics based on unconventional quantum phenomena, for instance, the topology. The formation of topologically non-trivial states is related to crystalline symmetry, spin-orbit coupling, and magnetic ordering. Here, we demonstrate how lattice distortions and octahedral rotation in SrNbO$_3$ films induce the band topology. By employing angle-resolved photoemission spectroscopy (ARPES) and density functional theory (DFT) calculations, we verify the presence of in-phase $a^0a^0c^+$ octahedral rotation in ultra-thin SrNbO$_3$ films, which causes the formation of topologically-protected Dirac band crossings. Our study illustrates that octahedral engineering can be effectively exploited for implanting and controlling quantum topological phases in transition metal oxides.

High-fidelity and rapid readout of a qubit state is key to quantum computing and communication, and it is a prerequisite for quantum error correction. We present a readout scheme for superconducting qubits that combines two microwave techniques: applying a shelving technique to the qubit that effectively increases the energy-relaxation time, and a two-tone excitation of the readout resonator to distinguish among qubit populations in higher energy levels. Using a machine-learning algorithm to post-process the two-tone measurement results further improves the qubit-state assignment fidelity. We perform single-shot frequency-multiplexed qubit readout, with a 140ns readout time, and demonstrate 99.5% assignment fidelity for two-state readout and 96.9% for three-state readout - without using a quantum-limited amplifier.

In superconducting quantum processors, the predictability of device parameters is of increasing importance as many labs scale up their systems to larger sizes in a 3D-integrated architecture. In particular, the properties of superconducting resonators must be controlled well to ensure high-fidelity multiplexed readout of qubits. Here we present a method, based on conformal mapping techniques, to predict a resonator's parameters directly from its 2D cross-section, without computationally heavy and time-consuming 3D simulation. We demonstrate the method's validity by comparing the calculated resonator frequency and coupling quality factor with those obtained through 3D finite-element-method simulation and by measurement of 15 resonators in a flip-chip-integrated architecture. We achieve a discrepancy of less than 2% between designed and measured frequencies, for 6-GHz resonators. We also propose a design method that reduces the sensitivity of the resonant frequency to variations in the inter-chip spacing.

Our ultra-low-loss silicon photonics platform can play a significant role in the second quantum revolution, supporting not only quantum photonics (e.g., quantum communication) but also solid-state quantum systems (e.g., scaling superconducting quantum computers).

$V_2O_3$ has long been studied as a prototypical strongly correlated material. The difficulty in obtaining clean, well ordered surfaces, however, hindered the use of surface sensitive techniques to study its electronic structure. Here we show by mean of X-ray diffraction and electrical transport that thin films prepared by pulsed laser deposition can reproduce the functionality of bulk $V_2O_3$. The same films, when transferred in-situ, show an excellent surface quality as indicated by scanning tunnelling microscopy and low energy electron diffraction, representing a viable approach to study the metal-insulator transition (MIT) in $V_2O_3$ by means of angle-resolved photoemission spectroscopy. Combined, these two aspects pave the way for the use of $V_2O_3$ thin films in device-oriented heterostructures.

VTT micron-scale silicon photonics platform can play a significant role in the second quantum revolution, supporting not only quantum photonics but also solid-state quantum systems. Quantum photonics can benefit from the unique properties of the platform, a distinctive example application being quantum key distribution, where we are developing receivers to support its large-scale deployment. On the other hand, we are using our photonic integration technology also to aid scaling-up superconducting quantum computers, by controlling and reading the qubits in the cryostat through classical optical links. I will cover all these developments showing our recent results, ongoing activities, and future plans.